Low-Temperature Solution-Processed Sn-doped TiO2 as Electron Transporting Layer for Efficient Perovskite Solar Cells
详细信息    查看官网全文
摘要
Perovskite solar cells(PSCs) are awesome compared to silicon solar cells due to their low cost and easy fabrication.Lead halide perovskite solar cells with the high efficiencies typically use high-temperature processed TiO_2 as the electron transporting layers(ETLs).~(1,2) Here we dem-onstrate that low-temperature solution-processed nanocrystalline Sn-doped TiO_2 can be an excellent alternative ETL material for efficient perovskite solar cells.Our optimized planar solar cell using such a Sn-doped TiO_2 ETL has achieved an efficiency of 16.7%, attributing to high electron mobility related to the insertion of Sn~(4+) ions.The study indicated that the introduction of the Sn element led to the change of the TiO_2 band gap from 3.0 to 3.2 eV.Electrochemical impedance spectroscopy showed that the resistance of the device based on Sn-doped TiO_2 film was lower than that of the undoped device.The PCE of the Sn-doped perovskite device achieved 16.7%, which was almost 25.6% higher than that of the undoped sample.The simple low temperature process is compatible with the roll-to-roll manufacturing of low-cost perovskite solar cells on flexible substrates.
Perovskite solar cells(PSCs) are awesome compared to silicon solar cells due to their low cost and easy fabrication.Lead halide perovskite solar cells with the high efficiencies typically use high-temperature processed TiO_2 as the electron transporting layers(ETLs).~(1,2) Here we dem-onstrate that low-temperature solution-processed nanocrystalline Sn-doped TiO_2 can be an excellent alternative ETL material for efficient perovskite solar cells.Our optimized planar solar cell using such a Sn-doped TiO_2 ETL has achieved an efficiency of 16.7%, attributing to high electron mobility related to the insertion of Sn~(4+) ions.The study indicated that the introduction of the Sn element led to the change of the TiO_2 band gap from 3.0 to 3.2 eV.Electrochemical impedance spectroscopy showed that the resistance of the device based on Sn-doped TiO_2 film was lower than that of the undoped device.The PCE of the Sn-doped perovskite device achieved 16.7%, which was almost 25.6% higher than that of the undoped sample.The simple low temperature process is compatible with the roll-to-roll manufacturing of low-cost perovskite solar cells on flexible substrates.
引文
[1]Xie F X,Zhang D,Su H,et al.,ACS nano,2015,9,639-646.
    [2]Zhou Y,Yang M,Vasiliev A L,et al.,J.Mater.Chem.A,2015,3,9249-9256.

© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号

地址:北京市海淀区学院路29号 邮编:100083

电话:办公室:(+86 10)66554848;文献借阅、咨询服务、科技查新:66554700