质子辐照导致科学级CCD电离和位移损伤及其机理分析
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- 英文论文题名：Analysis of ionizing and department damage mechanism in scientific CCD injiected by proton
- 论文作者：文林 ; 李豫东 ; 郭旗 ; 任迪远 ; 汪波 ; 玛丽娅
- 英文论文作者：Lin Wen ; Yu-dong Li ; Qi Guo ; Di-yuan Ren ; Bo Wang ; Maria ; Key Laboratory of Functional Materials and Devices for Special Environments of CAS ; Xinjiang Key Laboratory of Electronic Information Materials and Devices ; Xinjiang Technical Institute of Physics&Chemistry of CAS ; Graduate University of Chinese Academy of Sciences
- 年：2014
- 作者机构：中国科学院特殊环境功能材料与器件重点实验室新疆电子信息材料与器件重点实验室中国科学院新疆理化技术研究所;中国科学院大学;
- 论文关键词：CCD ; 质子辐照 ; 电离效应 ; 位移损伤 ; 体缺陷
- 英文论文关键词：scientific CCD ; proton irradiation ; total ionizing dose effects ; department damage
- 会议召开时间：2014-08-13
- 会议录名称：第十七届全国核电子学与核探测技术学术年会论文集
- 语种：中文
- 分类号：TL81
- 学会代码：HDZX
- 会议名称：第十七届全国核电子学与核探测技术学术年会
- 会议地点：中国甘肃兰州
- 主办单位：中国电子学会、中国核学会核电子学与核探测技术分会
- 学会名称：中国电子学会核电子学与核探测技术分会
- 页数：8
- 文件大小：783k
- 原文格式：D
- 会议级别：全国
摘要
对某国产埋沟科学级CCD进行了10MeV质子辐照试验研究,试验过程中重点考察了器件的暗信号、电荷转移效率特性的变化。结果表明,器件的主要性能参数随着质子辐照注量的增大明显退化,在退火过程中这些参数均有不同程度的恢复。对CCD敏感参数退化规律及其与器件工艺、结构的相关性进行了分析,并推导了参数退化随质子辐照注量变化的经验公式。上述工作可为深入开展CCD抗辐射性能预测、抗辐射工艺改进与结构优化提供重要参考。
A sort of homemade buried scientific CCD(Charge Coupled Devices) was injected by 10 MeV proton, and measure was carried out primarily on change of dark signal, non-uniformity of dark signal, charge transfer efficiency, and spectrum characterization. Result of experiment implied that parameters of CCD presented significant decrease. Post-irradiation annealing was processed and revealed different rebound degree in CCD parameters. This paper analysed the mechanism of CCD parameters decrease, and their dependence on process and architecture in manufacture. The results above will provide helpful reference in characterization evaluation and technique development of future CCD.
A sort of homemade buried scientific CCD(Charge Coupled Devices) was injected by 10 MeV proton, and measure was carried out primarily on change of dark signal, non-uniformity of dark signal, charge transfer efficiency, and spectrum characterization. Result of experiment implied that parameters of CCD presented significant decrease. Post-irradiation annealing was processed and revealed different rebound degree in CCD parameters. This paper analysed the mechanism of CCD parameters decrease, and their dependence on process and architecture in manufacture. The results above will provide helpful reference in characterization evaluation and technique development of future CCD.
引文
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[6]李鹏伟,郭旗,任迪远,于跃,王义元,高博,电荷耦合器件的60Coγ射线辐射损伤效应[J],原子能科学技术,2010,vol.44,no.1,pp.124-128
[7]李鹏伟,郭旗,任迪远,于跃,兰博,李茂顺,电荷耦合器件的60Coγ射线辐照损伤退火效应[J],原子能科学技术,2010,vol.44,no.5,pp.603-607
[8]R.D.Schrimpf,D.M.Fleedwood,Radiation effects and soft errors in integrated circuits and electronic devices[M],Singapore:World Scientific Publishing Co.Pte.Ltd.,2004,pp.135,142,144
[9]J.M.Killiany,Radiation effects in silicon charge-coupled devices[J],IEEE Trans.on Nucl.Sci.,1978,vol.1,no.4,pp.353-365
[10]孙鹏,杜磊,陈文豪,何亮,张晓芳,金属-氧化物-半导体场效应管辐射效应模型研究[J],物理学报,2012,vol.61,no.10,pp.107803
[11]陈伟华,杜磊,庄奕琪,包军林,何亮,张天福,张雪,MOS结构电离辐射效应模型研究[J],物理学报,2009,vol.58,no.6,pp.4090-4095
[12]G.R.Hopkinson,Mohammadzadeh,Radiation effects in charge-coupled devices(CCD)imagers and CMOS active pixel sensors[J],International Journal of High Speed Electronics and Systems,2004,vol.14,no.2,pp.419-443
[13]S.Wood,Simulation of radiation damage in solids[J],IEEE Trans.on Nucl.Sci.,1981,vol.28,no.6,pp.4107-4112
[14]A.M.Mohsen,M.F.Tompsett,The effects of bulk traps on the performance of bulk channel charge-coupled devices[J],IEEE Tran.on Electron Devices,1974,vol.21,no.11,pp.701-712
[2]Norbert Meidinger,Lothar Struder,Peter Holl,Heike Soltau,Christoph V.Zanthier,Analysis of trapping effects on charge transfer in proton irradiated pn-CCDs[J],Nuclear Instruments and Methods in Physics Research A,1996,vol.377,pp.298-311
[3]C.J.Bebek,D.E.Groom,S.E.Holland,A.Karcher,W.F.Kolbe,N.P.Palaio,B.T.Turko,G.Wang,Radiation damage measurements and modeling of P-channel CCDs irradiated with 12and 55 Me V protons[C],Astropartical,partical and space physics,detectors and medical physics applications,2004apsp.Conf.608B,Oct.2003
[4]J.Bourgoin,M.Lanoo,Point defects in semiconductors[M],Springer-Verlag,Berlin,1983
[5]王祖军,刘以农,陈伟,唐本奇,肖志刚,刘敏波,黄绍艳,张勇,质子辐照CCD诱发暗信号增大[J],清华大学学报(自然科学版),2010,vol.50,no.9,pp.1484-1488
[6]李鹏伟,郭旗,任迪远,于跃,王义元,高博,电荷耦合器件的60Coγ射线辐射损伤效应[J],原子能科学技术,2010,vol.44,no.1,pp.124-128
[7]李鹏伟,郭旗,任迪远,于跃,兰博,李茂顺,电荷耦合器件的60Coγ射线辐照损伤退火效应[J],原子能科学技术,2010,vol.44,no.5,pp.603-607
[8]R.D.Schrimpf,D.M.Fleedwood,Radiation effects and soft errors in integrated circuits and electronic devices[M],Singapore:World Scientific Publishing Co.Pte.Ltd.,2004,pp.135,142,144
[9]J.M.Killiany,Radiation effects in silicon charge-coupled devices[J],IEEE Trans.on Nucl.Sci.,1978,vol.1,no.4,pp.353-365
[10]孙鹏,杜磊,陈文豪,何亮,张晓芳,金属-氧化物-半导体场效应管辐射效应模型研究[J],物理学报,2012,vol.61,no.10,pp.107803
[11]陈伟华,杜磊,庄奕琪,包军林,何亮,张天福,张雪,MOS结构电离辐射效应模型研究[J],物理学报,2009,vol.58,no.6,pp.4090-4095
[12]G.R.Hopkinson,Mohammadzadeh,Radiation effects in charge-coupled devices(CCD)imagers and CMOS active pixel sensors[J],International Journal of High Speed Electronics and Systems,2004,vol.14,no.2,pp.419-443
[13]S.Wood,Simulation of radiation damage in solids[J],IEEE Trans.on Nucl.Sci.,1981,vol.28,no.6,pp.4107-4112
[14]A.M.Mohsen,M.F.Tompsett,The effects of bulk traps on the performance of bulk channel charge-coupled devices[J],IEEE Tran.on Electron Devices,1974,vol.21,no.11,pp.701-712