ZnO纳米棒/纳米锥阵列制备及其场发射性质研究
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- 英文论文题名：Fabrication and field emission properties of ZnO nanorod/nanocone arrays
- 论文作者：曹培江 ; 韩舜 ; 王欣 ; 刘新科 ; 柳文军 ; 贾芳 ; 曾玉祥 ; 朱德亮 ; 吕有明
- 英文论文作者：CAO Pei-jiang ; HAN Shun ; WANG Xin ; LIU Xin-ke ; LIU Wen-jun ; JIA Fang ; ZENG Yu-xiang ; ZHU De-liang ; LU You-ming ; College of Materials Science and Engineering ; Shenzhen University ; State Key Laboratory of Superhard Materials ; Jilin University
- 年：2016
- 作者机构：深圳大学材料学院;吉林大学超硬国家重点实验室;
- 论文关键词：ZnO晶种层 ; ZnO纳米棒阵列 ; ZnO纳米锥阵列 ; 场发射性能
- 英文论文关键词：ZnO seed layer ; ZnO nanorod array ; ZnO nanocone array ; FE property
- 会议召开时间：2016-08-23
- 会议录名称：2016真空电子学分会第二十届学术年会论文集（下）
- 语种：中文
- 分类号：TQ132.41;TB383.1
- 学会代码：ZKDZ
- 会议名称：2016真空电子学分会第二十届学术年会
- 会议地点：中国福建厦门
- 主办单位：中国电子学会真空电子学分会、微波电真空器件国家级重点实验室
- 学会名称：中国电子学会真空电子学分会
- 页数：5
- 文件大小：826k
- 原文格式：D
- 会议级别：全国
摘要
采用化学气相沉积法在厚度约450 nm的ZnO晶种层上分别生长了ZnO纳米棒/纳米锥阵列,并对其场发射特性进行了研究。研究结果发现:沿c轴择优取向的ZnO晶种层中含有较少缺陷;长度分别为7μm和3.5μm的ZnO纳米棒/纳米锥均沿[0001]方向生长,ZnO纳米棒/纳米锥包含大量氧空位缺陷;ZnO纳米棒顶端尺寸约150 nm,而ZnO纳米锥具有非常尖锐的尖端;ZnO纳米棒/纳米锥的面密度分别为2.6×10~8/cm~2和1.9×10~8/cm~2;ZnO纳米锥具有相对较低的开启电场~6.1 V/μm和较高的场增强因子~1641。本文对影响场发射性能的因素进行了讨论。
ZnO nanorod/nanocone arrays were grown on the ZnO seed layers respectively by the chemical vapor deposition(CVD) method and their field emission(FE) properties were studied. The ZnO seed layer with a thickness of approximately 450 nm exhibits high c-axis orientation and possesses few defects. ZnO nanorods with the length of about 7 μm and ZnO nanocones with the length of about 3.5 μm all grow along the [0001] direction and contain a large number of oxygen vacancy defects. ZnO nanorods have the similar top diameters of 150 nm, while ZnO nanocones exhibit very sharp tips. The areal densitis of ZnO nanorod/nanocone arrays are about 3.6×10~8/cm~2 and 1.9×10~8/cm~2.ZnO nanocone array has the lower turn-on electrical field of 6.1 V/μm and higher field enhancement factor of 1641. The effect factors on the FE property have been discussed.
ZnO nanorod/nanocone arrays were grown on the ZnO seed layers respectively by the chemical vapor deposition(CVD) method and their field emission(FE) properties were studied. The ZnO seed layer with a thickness of approximately 450 nm exhibits high c-axis orientation and possesses few defects. ZnO nanorods with the length of about 7 μm and ZnO nanocones with the length of about 3.5 μm all grow along the [0001] direction and contain a large number of oxygen vacancy defects. ZnO nanorods have the similar top diameters of 150 nm, while ZnO nanocones exhibit very sharp tips. The areal densitis of ZnO nanorod/nanocone arrays are about 3.6×10~8/cm~2 and 1.9×10~8/cm~2.ZnO nanocone array has the lower turn-on electrical field of 6.1 V/μm and higher field enhancement factor of 1641. The effect factors on the FE property have been discussed.
引文
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[4]Yousefi R,Jamali-Sheini F,Khorsand Zak A,Mahmoudian MR.Effect of indium concentration on morphology and optical properties of In-doped ZnO nanostructures.Ceram Int,2012,38:6295-6301.
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