改性的低温-高温法外延生长低位错密度硅基锗薄膜的研究
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- 论文作者：种海宁 ; 王哲玮 ; 叶辉
- 年：2017
- 作者机构：浙江大学现代光学仪器国家重点实验室;
- 会议召开时间：2017-05-25
- 会议录名称：第十二届全国硅基光电子材料及器件研讨会会议论文集
- 语种：中文
- 分类号：TN304.054
- 学会代码：XMJS
- 会议名称：第十二届全国硅基光电子材料及器件研讨会
- 会议地点：中国福建厦门
- 主办单位：厦门大学物理科学与技术学院、浙江大学硅材料国家重点实验室
- 学会名称：厦门大学物理科学与技术学院
- 页数：2
- 文件大小：132k
- 原文格式：D
- 会议级别：全国
摘要
<正>本文提出了一种利用分子束外延系统(MBE),通过改性后的低温高温两步法,在(001)硅片上生长高质量应变驰豫的锗膜的方法。这种改性后的锗膜生长方法包括如下步骤:首先在380℃下生长低温层,其次在不同升温速率和沉积速率下生长380-600℃的变温层,最后在600℃下生长高温层。锗膜生长之后对其进行原位循环热退火10次。利用反射式高能电子衍射、X射线衍射、拉曼光谱、高分辨透射电镜等手段对锗膜的生长特性和应变进行检测。结果表明:退火后的
引文
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4.Hartmann,J.;Abbadie,A.;Cherkashin,N.;Grampeix,H.;Clavelier,L.,Epitaxial growth of Ge thick layers on nominal and 6°off Si(0 0 1);Ge surface passivation by Si.Semiconductor Science and Technology 2009,24,055002.
5.Kasper,E.;Oehme,M.;Arguirov,T.;Werner,J.;Kittler,M.;Schulze,J.,Room temperature direct band gap emission from Ge pin heterojunction photodiodes.Advances in optoelectronics 2012,2012.
6.Zaumseil,P.,A fast X-ray method to determine Ge content and relaxation of partly relaxed Si1-x Gex layers on silicon substrates.physica status solidi(a)1994,141,155-161.
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