Understanding the evolution of photovoltaic performance in perovskite/spiro-OMeTAD solar cells
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- 英文论文题名：Understanding the evolution of photovoltaic performance in perovskite/spiro-OMeTAD solar cells
- 论文作者：Zhen Song ; Jiang Liu ; Gang Wang ; Wentao Zuo ; Cheng Liao ; Jun Mei
- 英文论文作者：Zhen Song ; Jiang Liu ; Gang Wang ; Wentao Zuo ; Cheng Liao ; Jun Mei ; Chengdu Green Energy and Green Manufacturing Technology R&D Centre ; Chengdu Development Center of Science and Technology ; China Academy of Engineering Physics ; Science and Technology on Surface Physics and Chemistry Laboratory ; School of Materials ; Southwest University of Science and Technology
- 年：2017
- 作者机构：Chengdu Green Energy and Green Manufacturing Technology R&D Centre,Chengdu Development Center of Science and Technology,China Academy of Engineering Physics;Science and Technology on Surface Physics and Chemistry Laboratory;School of Materials,Southwest University of Science and Technology;
- 英文论文关键词：photovoltaic performance ; evolution ; spiro-OMeTAD ; conductivity ; surface potential
- 会议召开时间：2017-05-27
- 会议录名称：第四届新型太阳能电池学术研讨会论文集
- 英文会议录名称：Abstract Book of the 4th Conference on New Generation Solar Cells
- 语种：英文
- 分类号：TM914.4
- 学会代码：ZKYQ
- 会议名称：第四届新型太阳能电池学术研讨会
- 会议地点：中国北京
- 主办单位：中国可再生能源学会光化学专业委员会
- 学会名称：中国科学院物理研究所清洁能源实验室
- 页数：1
- 文件大小：440k
- 原文格式：D
- 会议级别：全国
摘要
Lead halide perovskite solar cells(PSCs) with remarkable power conversion efficiency have attracted tremendous attention in recent years.However, there still exist lots of problems which are not completely understood, and further studies are needed.Herein, the hole-transport layer(HTL) dependence of the photovoltaic performance evolution of perovskite solar cells is investigated in detail.We found that the freshly prepared devices using pristine spiro-OMeTAD and Li-doped spiro-OMeTAD as HTLs always exhibited S-shaped J-V curves with poor fill factor(FF).The devices showed progressively improved FF and efficiencies when exposed to air, which is attributed to air-exposure induced conductivity improvement in spiro-OMeTAD layer.After introducing a cobalt salt dopant(FK209) into spiro-OMeTAD layer, the corresponding devices showed remarkable performance without the need of air exposure.Our results confirmed that the dopant not only increases the conductivity of spiro-OMeTAD layer, but also tunes the surface potential, and this helps to improve the charge transport and reduce the recombination loss.
Lead halide perovskite solar cells(PSCs) with remarkable power conversion efficiency have attracted tremendous attention in recent years.However, there still exist lots of problems which are not completely understood, and further studies are needed.Herein, the hole-transport layer(HTL) dependence of the photovoltaic performance evolution of perovskite solar cells is investigated in detail.We found that the freshly prepared devices using pristine spiro-OMeTAD and Li-doped spiro-OMeTAD as HTLs always exhibited S-shaped J-V curves with poor fill factor(FF).The devices showed progressively improved FF and efficiencies when exposed to air, which is attributed to air-exposure induced conductivity improvement in spiro-OMeTAD layer.After introducing a cobalt salt dopant(FK209) into spiro-OMeTAD layer, the corresponding devices showed remarkable performance without the need of air exposure.Our results confirmed that the dopant not only increases the conductivity of spiro-OMeTAD layer, but also tunes the surface potential, and this helps to improve the charge transport and reduce the recombination loss.
Lead halide perovskite solar cells(PSCs) with remarkable power conversion efficiency have attracted tremendous attention in recent years.However, there still exist lots of problems which are not completely understood, and further studies are needed.Herein, the hole-transport layer(HTL) dependence of the photovoltaic performance evolution of perovskite solar cells is investigated in detail.We found that the freshly prepared devices using pristine spiro-OMeTAD and Li-doped spiro-OMeTAD as HTLs always exhibited S-shaped J-V curves with poor fill factor(FF).The devices showed progressively improved FF and efficiencies when exposed to air, which is attributed to air-exposure induced conductivity improvement in spiro-OMeTAD layer.After introducing a cobalt salt dopant(FK209) into spiro-OMeTAD layer, the corresponding devices showed remarkable performance without the need of air exposure.Our results confirmed that the dopant not only increases the conductivity of spiro-OMeTAD layer, but also tunes the surface potential, and this helps to improve the charge transport and reduce the recombination loss.
引文