金箔上直接化学气相沉积法合成二硫化钼/六方氮化硼范德华异质结
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- 英文论文题名：Direct Chemical Vapor Deposition Growth of MoS_2/h-BN Van Der Waals Heterostructures on Gold Foils
- 论文作者：张哲朋 ; 张艳锋 ; 刘忠范
- 英文论文作者：Zhepeng Zhang ; Yanfeng Zhang ; Zhongfan Liu ; Center for Nanochemistry (CNC) ; College of Chemistry and Molecular Engineering ; Academy for Advanced Interdisciplinary Studies ; Peking University ; Department of Materials Science and Engineering ; College of Engineering ; Peking University
- 年：2016
- 作者机构：北京大学纳米化学研究中心化学与分子工程学院前沿交叉学科研究院;北京大学工学院材料科学与工程系;
- 论文关键词：二硫化钼 ; 六方氮化硼 ; 范德华异质结 ; 化学气相沉积
- 英文论文关键词：MoS_2 ; h-BN ; van der waals heterostructure ; CVD
- 会议召开时间：2016-07-01
- 会议录名称：中国化学会第30届学术年会摘要集-第四十一分会：纳米材料与器件
- 语种：中文
- 分类号：TN304.055
- 学会代码：ZGHY
- 会议名称：中国化学会第30届学术年会-第四十一分会 ; 纳米材料与器件
- 会议地点：中国辽宁大连
- 主办单位：中国化学会
- 学会名称：中国化学会
- 页数：1
- 文件大小：198k
- 原文格式：D
- 会议级别：全国
摘要
六方氮化硼(h-BN)可有效隔绝基底/环境对二维过渡金属硫族化合物(TMDCs)的电子掺杂作用,从而使其表现出高的载流子迁移率及更加本征的物理性质。我们选择金箔为基底~[1],利用低压化学气相沉积法(LPCVD),先在金箔上直接生长了满层覆盖的高质量h-BN,然后在h-BN/Au上直接生长了亚单层甚至是满层的MoS~(-2)。对比h-BN上的MoS_2与金箔上直接生长的MoS_2的拉曼和荧光光谱发现,前者E_(2g)峰蓝移约1.1cm~(-1)且在676.5nm(对应直接带隙~1.83eV)处有较强荧光峰,这表明前者与基底相互作用力更弱,更接近悬浮的单层MoS_2~[2]。更重要的是,该异质结构可通过电化学鼓泡法从金箔转移至其它任意基底,转移后的扫描透射电子显微镜(STEM)表征显示,h-BN上CVD生长的MoS_2高质量无缺陷,部分MoS_2畴区会出现边缘重叠的现象,这也从侧面说明MoS_2与h-BN的界面作用力较弱。该研究为直接生长其它TMDCs/h-BN范德华异质结构提供了重要的参考。
Two-dimensional(2D) transition metal dichalcogenides(TMDCs) have presented higher carrier mobilities and more intrinsic physical properties when they are stacked with hexagonal boron nitride(h-BN). Herein, we select a two-step LPCVD method to directly grow full covered h-BN on Au foils, and then grow MoS_2 on h-BN/Au. Compared to MoS_2 on Au [1], the Raman E_(2g) model of as-grown MoS_2/h-BN/Au foils is slightly blue shifted by ~1.1 cm~(-1), and a strong PL peak appears at 676.5 nm(consisting with a direct band gap of ~1.83 e V). All these information indicate that the monolayer MoS_2 suffers more weak interaction from h-BN/Au than that from Au [2]. More intriguingly, we find that this heterostructure can be transferred onto other substrates by an electrical chemical bubbling method. This direct CVD growth method should be referable to the syntheses of other 2D hetetostructures.
Two-dimensional(2D) transition metal dichalcogenides(TMDCs) have presented higher carrier mobilities and more intrinsic physical properties when they are stacked with hexagonal boron nitride(h-BN). Herein, we select a two-step LPCVD method to directly grow full covered h-BN on Au foils, and then grow MoS_2 on h-BN/Au. Compared to MoS_2 on Au [1], the Raman E_(2g) model of as-grown MoS_2/h-BN/Au foils is slightly blue shifted by ~1.1 cm~(-1), and a strong PL peak appears at 676.5 nm(consisting with a direct band gap of ~1.83 e V). All these information indicate that the monolayer MoS_2 suffers more weak interaction from h-BN/Au than that from Au [2]. More intriguingly, we find that this heterostructure can be transferred onto other substrates by an electrical chemical bubbling method. This direct CVD growth method should be referable to the syntheses of other 2D hetetostructures.
引文
[1]J.P.Shi,Y.F.Zhang,et al.Adv.Funct.Mater.2015,25:842;Adv.Mater.2015,27:7086.
[2]Z.P.Zhang,in preparation.
[2]Z.P.Zhang,in preparation.