Chemical Reduction of Intrinsic Defects in Thicker Heterojunction Planar Perovskite Solar Cells
详细信息    查看官网全文
摘要
Minimization of defects in absorber materials is essential for hybrid perovskite solar cells, especially when constructing thick polycrystalline layers in a planar configuration.Here, a simple methylamine solution-based additive is reported to improve film quality with nearly an order of magnitude reduction in intrinsic defect concentration.In the resultant film, an increase in carrier lifetime as a result of a decrease in shallow electronic disorder is observed.This superior crystalline film quality is further evidenced via a doubled spin relaxation time as compared with other reports.Bearing sufficient carrier diffusion length, a thick absorber layer(≈650 nm) is implemented in planar devices to achieve a champion power conversion efficiency of 20.02% with a stabilized output efficiency of 19.01% under one sun illumination.This work demonstrates a simple approach to improve hybrid perovskite film quality by substantial reduction of intrinsic defects for wide applications in optoelectronics.
Minimization of defects in absorber materials is essential for hybrid perovskite solar cells, especially when constructing thick polycrystalline layers in a planar configuration.Here, a simple methylamine solution-based additive is reported to improve film quality with nearly an order of magnitude reduction in intrinsic defect concentration.In the resultant film, an increase in carrier lifetime as a result of a decrease in shallow electronic disorder is observed.This superior crystalline film quality is further evidenced via a doubled spin relaxation time as compared with other reports.Bearing sufficient carrier diffusion length, a thick absorber layer(≈650 nm) is implemented in planar devices to achieve a champion power conversion efficiency of 20.02% with a stabilized output efficiency of 19.01% under one sun illumination.This work demonstrates a simple approach to improve hybrid perovskite film quality by substantial reduction of intrinsic defects for wide applications in optoelectronics.
引文
[1]Zonghao Liu et.al.,Adv.Mater.2017,DOI:10.1002/adma.201606774.

© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号

地址:北京市海淀区学院路29号 邮编:100083

电话:办公室:(+86 10)66554848;文献借阅、咨询服务、科技查新:66554700