Crystal Growth of ScAlMgO_4 and its application in molecular beam epitaxy of ZnO with high Mg content
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- 英文论文题名：Crystal Growth of ScAlMgO_4 and its application in molecular beam epitaxy of ZnO with high Mg content
- 论文作者：Tao Yan ; M.C.Wen ; Ning Ye ; Jiyang Wang ; L.Chang
- 英文论文作者：Tao Yan ; M.C.Wen ; Ning Ye ; Jiyang Wang ; L.Chang ; Key Laboratory of Optoelectronic Materials Chemistry and Physics ; Fujian Institute of Research on the Structure of Matter ; Chinese Academy of Sciences ; Department of Materials and Optoelectronic Science ; National Sun Yat-Sen University
- 年：2016
- 作者机构：Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter,Chinese Academy of Sciences;Department of Materials and Optoelectronic Science, National Sun Yat-Sen University;
- 英文论文关键词：ScAlMgO_4 ; crystal growth ; ZnMgO ; molecular beam epitaxy
- 会议召开时间：2016-12-19
- 会议录名称：中国晶体学会第六届学术年会暨会员代表大会（非线性光学及激光晶体材料分会）论文摘要集
- 英文会议录名称：Abstracts of the 6th Annual Conference of Chinese Crystallographic Society
- 语种：英文
- 分类号：O78
- 学会代码：ZGJY
- 会议名称：中国晶体学会第六届学术年会暨会员代表大会（非线性光学及激光晶体材料分会）
- 会议地点：中国广东广州
- 主办单位：中国晶体学会
- 学会名称：中国晶体学会
- 页数：1
- 文件大小：268k
- 原文格式：D
- 会议级别：全国
摘要
ScAlMgO_4(SCAM) acts as the promising substrate having a hexagonal crystal structure with lattice constants of a = 0.3246 nm and c = 2.5195 nm [1]. The lattice mismatch between SCAM and ZnO is less than 0.1%. High quality ZnO epilayers have been successfully grown on SCAM substrate [2]. The SCAM substrate is therefore regarded as an ideal candidate for growing wurtzite Zn_(1-x)Mg_xO epilayers with high MgO contents. High quality crystals were grown assisted by structural design and controlling of growth direction. A series of wurtzite ZnO and Zn_(1-x)Mg_xO(x=0.41-0.66) epilayers have been grown on this substrate by plasma-assisted molecular beam epitaxy. X-ray diffraction results indicate that only a barely recognized amount of rocksalt phase exists in the epilayer having the highest MgO content of 66%. The epilayers with 41% and 50% MgO exhibit reasonable full width at half maximum(FWHM) values of 1200-1800 arcsec for the rocking curve of the(0002)_(wz) reflection. However, both the surface morphology and the FWHM value deteriorate with further addition the MgO content to 66%. The bandgap energy of the high MgO content epilayers varies within the range of 4.11-4.33 eV, determined by the transmission spectra and the cathodoluminescence measurement.
ScAlMgO_4(SCAM) acts as the promising substrate having a hexagonal crystal structure with lattice constants of a = 0.3246 nm and c = 2.5195 nm [1]. The lattice mismatch between SCAM and ZnO is less than 0.1%. High quality ZnO epilayers have been successfully grown on SCAM substrate [2]. The SCAM substrate is therefore regarded as an ideal candidate for growing wurtzite Zn_(1-x)Mg_xO epilayers with high MgO contents. High quality crystals were grown assisted by structural design and controlling of growth direction. A series of wurtzite ZnO and Zn_(1-x)Mg_xO(x=0.41-0.66) epilayers have been grown on this substrate by plasma-assisted molecular beam epitaxy. X-ray diffraction results indicate that only a barely recognized amount of rocksalt phase exists in the epilayer having the highest MgO content of 66%. The epilayers with 41% and 50% MgO exhibit reasonable full width at half maximum(FWHM) values of 1200-1800 arcsec for the rocking curve of the(0002)_(wz) reflection. However, both the surface morphology and the FWHM value deteriorate with further addition the MgO content to 66%. The bandgap energy of the high MgO content epilayers varies within the range of 4.11-4.33 eV, determined by the transmission spectra and the cathodoluminescence measurement.
ScAlMgO_4(SCAM) acts as the promising substrate having a hexagonal crystal structure with lattice constants of a = 0.3246 nm and c = 2.5195 nm [1]. The lattice mismatch between SCAM and ZnO is less than 0.1%. High quality ZnO epilayers have been successfully grown on SCAM substrate [2]. The SCAM substrate is therefore regarded as an ideal candidate for growing wurtzite Zn_(1-x)Mg_xO epilayers with high MgO contents. High quality crystals were grown assisted by structural design and controlling of growth direction. A series of wurtzite ZnO and Zn_(1-x)Mg_xO(x=0.41-0.66) epilayers have been grown on this substrate by plasma-assisted molecular beam epitaxy. X-ray diffraction results indicate that only a barely recognized amount of rocksalt phase exists in the epilayer having the highest MgO content of 66%. The epilayers with 41% and 50% MgO exhibit reasonable full width at half maximum(FWHM) values of 1200-1800 arcsec for the rocking curve of the(0002)_(wz) reflection. However, both the surface morphology and the FWHM value deteriorate with further addition the MgO content to 66%. The bandgap energy of the high MgO content epilayers varies within the range of 4.11-4.33 eV, determined by the transmission spectra and the cathodoluminescence measurement.
引文
[1]N.Kimizuka and M.Takahiko,Structural classification of RAO3(MO)n compounds(R=Sc,In,Y,or lanthanides;A=Fe(III),Ga,Cr,or Al;M=divalent cation;n=1–11),Journal of Solid State Chemistry,1989,78,98-107.
[2]A.Ohtomo,et al.,Single crystalline ZnO films grown on lattice-matched ScAlMgO4(0001)substrates,Applied physics letters,1999,75,2635-2637.
[2]A.Ohtomo,et al.,Single crystalline ZnO films grown on lattice-matched ScAlMgO4(0001)substrates,Applied physics letters,1999,75,2635-2637.