摘要
基于WIN公司0.25μm栅长的Ga N HEMT工艺,研制了一款C波段Ga N单片功率放大器。该电路采用两级放大,末级的输入输出匹配电路中采用了巴伦结构,有效地抑制了偶次谐波,实现了波形控制,提高了放大器的效率。仿真结果表明,在5.0-6.0GHz频带内,当输入功率为23d Bm时,输出功率Pout=40d Bm,增益Gain>15d B,功率附加效率PAE>39%。
Based on WIN's 0.25μm Ga N HEMT technology, a C-band Ga N MMIC power amplifier is developed. The MMIC is designed with two stages, in the final stage of the input and output matching circuit using the balun structure, which effectively suppresses the even harmonics, realizes the waveform control and improves the efficiency of the amplifier. The simulation results show that when the input power is 23 d Bm at the frequency in 5.0-6.0GHz range, the Pout is 40 d Bm, the Gain>15d B, and the power added efficiency(PAE) is greater than 39%.
引文
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