Improved Device Performance of Polymer Solar Cells by Using a SnO_2/ZnO Stacked Structure as Cathode Interfacial Layer
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- 英文论文题名：Improved Device Performance of Polymer Solar Cells by Using a SnO_2/ZnO Stacked Structure as Cathode Interfacial Layer
- 论文作者：Shuai Huang ; Si Shen ; Xin Chen ; Bonan Kang
- 英文论文作者：Shuai Huang ; Si Shen ; Xin Chen ; Bonan Kang ; State Key Laboratory on Integrated Optoelectronics ; College of Electronic Science and Engineering ; Jilin University
- 年：2017
- 作者机构：State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University;
- 英文论文关键词：polymer solar cells ; stacked interfacial layer ; work function ; electron injection ; exciton dissociation
- 会议召开时间：2017-05-27
- 会议录名称：第四届新型太阳能电池学术研讨会论文集
- 英文会议录名称：Abstract Book of the 4th Conference on New Generation Solar Cells
- 语种：英文
- 分类号：TM914.4
- 学会代码：ZKYQ
- 会议名称：第四届新型太阳能电池学术研讨会
- 会议地点：中国北京
- 主办单位：中国可再生能源学会光化学专业委员会
- 学会名称：中国科学院物理研究所清洁能源实验室
- 页数：1
- 文件大小：723k
- 原文格式：D
- 会议级别：全国
摘要
In the inverted structure, an interfacial layer plays a significant role in high-efficiency PSCs such as offering favorable ohmic contacts with electrodes, suppressing charge recombination and serving as an optical spacer layer for light manipulation.We prepared a highly efficient inverted polymer photovoltaic cell based on P3HT:PC_(61)BM by incorporating a SnO_2/ZnO stacked structure as a cathode interfacial layer.Compared to the inverted polymer photovoltaic cells with ZnO interfacial layer, the stacked SnO_2/ZnO not only facilitate electron injection and reduce the energy loss in the process of charge separation due to the optimum band matching, but also inhibit carrier recombination and enhance exciton dissociation at the interface of photoactive layer and cathode, hence all the device parameters of P3HT-based solar cells are simultaneously improved, yielding higher power conversion efficiency(PCE) up to 4.25% compared with the control one(PCE 3.10%).Furthermore, the PCE of device with stacked SnO_2/ZnO still remained 85% of its initial value during the device storage in a glove box for 23 day.
In the inverted structure, an interfacial layer plays a significant role in high-efficiency PSCs such as offering favorable ohmic contacts with electrodes, suppressing charge recombination and serving as an optical spacer layer for light manipulation.We prepared a highly efficient inverted polymer photovoltaic cell based on P3HT:PC_(61)BM by incorporating a SnO_2/ZnO stacked structure as a cathode interfacial layer.Compared to the inverted polymer photovoltaic cells with ZnO interfacial layer, the stacked SnO_2/ZnO not only facilitate electron injection and reduce the energy loss in the process of charge separation due to the optimum band matching, but also inhibit carrier recombination and enhance exciton dissociation at the interface of photoactive layer and cathode, hence all the device parameters of P3HT-based solar cells are simultaneously improved, yielding higher power conversion efficiency(PCE) up to 4.25% compared with the control one(PCE 3.10%).Furthermore, the PCE of device with stacked SnO_2/ZnO still remained 85% of its initial value during the device storage in a glove box for 23 day.
In the inverted structure, an interfacial layer plays a significant role in high-efficiency PSCs such as offering favorable ohmic contacts with electrodes, suppressing charge recombination and serving as an optical spacer layer for light manipulation.We prepared a highly efficient inverted polymer photovoltaic cell based on P3HT:PC_(61)BM by incorporating a SnO_2/ZnO stacked structure as a cathode interfacial layer.Compared to the inverted polymer photovoltaic cells with ZnO interfacial layer, the stacked SnO_2/ZnO not only facilitate electron injection and reduce the energy loss in the process of charge separation due to the optimum band matching, but also inhibit carrier recombination and enhance exciton dissociation at the interface of photoactive layer and cathode, hence all the device parameters of P3HT-based solar cells are simultaneously improved, yielding higher power conversion efficiency(PCE) up to 4.25% compared with the control one(PCE 3.10%).Furthermore, the PCE of device with stacked SnO_2/ZnO still remained 85% of its initial value during the device storage in a glove box for 23 day.
引文
[1]Liu,J.;Wu,J.;Shao,S.;Deng,Y.;Meng,B.;Xie,Z.;Geng,Y.;Wang,L.;Zhang,F,ACS Appl.Mater.Interfaces,2014,6,8237-8245.
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