Degradation of organometallic perovskite solar cells induced by trap states
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摘要
The degradation of organometallic perovskite solar cells(PSCs) is the key bottleneck hampering their developments, which is typically ascribed to the decomposition of perovskite(CH_3NH_3PbI_3).However, we hold the different opinion that the increased trap states induced by the increased defects at the surface of perovskite result the original degradation of the devices.Degradation of PSCs is observed to be significant, with the efficiency decreased to 70% origin performance in ambient air for 7 days.However, no obvious decomposition or structural evolution of the perovskite was observed, except the notable degradation phenomenon of the device.The degradation of PSCs derives from deteriorated photocurrent and fill factor, which are proved to be induced by increased trap states for enlarged carrier recombination in degraded PSCs.The increased trap states in PSCs over storage time are probably induced by the increased defects at the surface of perovskite.The trap states induced degradation provides a physical insight into the degradation mechanisms of PSCs.Moreover, as the investigations were performed on real PSCs instead of individual perovskite films, the findings here present one of their actual degradation mechanisms.
The degradation of organometallic perovskite solar cells(PSCs) is the key bottleneck hampering their developments, which is typically ascribed to the decomposition of perovskite(CH_3NH_3PbI_3).However, we hold the different opinion that the increased trap states induced by the increased defects at the surface of perovskite result the original degradation of the devices.Degradation of PSCs is observed to be significant, with the efficiency decreased to 70% origin performance in ambient air for 7 days.However, no obvious decomposition or structural evolution of the perovskite was observed, except the notable degradation phenomenon of the device.The degradation of PSCs derives from deteriorated photocurrent and fill factor, which are proved to be induced by increased trap states for enlarged carrier recombination in degraded PSCs.The increased trap states in PSCs over storage time are probably induced by the increased defects at the surface of perovskite.The trap states induced degradation provides a physical insight into the degradation mechanisms of PSCs.Moreover, as the investigations were performed on real PSCs instead of individual perovskite films, the findings here present one of their actual degradation mechanisms.
引文
[1]D.Song,J.Ji,M.Li,*et al.,Applied Physics Letters,2016,108,093901.
    [2]T.Wang,J.Chen,M.Li,*et al.,Journal of Semiconductors,2017,38,014005.
    [3]P.Cui,P.Fu,M.Li,*et al.,RSC Advances,2015,5,75622.
    [4]Z.Zhang,X.Yue,M.Li,*et al.,RSC Advances,2015,5,104606.

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