摘要
By the means of first-principles computations, we investigated the geometries, stabilities, electronic and magnetic properties of fully and partially hydrogenated germanium nanoribbons(GeNRs). Independent of chirality and ribbon width, all of the fully hydrogenated GeNRs(fH-GeNRs) can exhibit the non-magnetic semiconducting characteristic with a band-gap of 1.156~1.846 eV, where their band-gap slightly decreases with the increase of ribbon width. By hydrogenating GeNRs from both the edges to center step by step, we also obtained partially hydrogenated zigzag GeNRs(pH-zGeNRs) and armchair ones(pH-aGeNRs), which can be viewed as the combination of hydrogenated and pristine GeNRs. Our computational results reveal that the different electronic and magnetic proerties can be observed between pH-zGeNRs and pH-aGeNRs. Specifically, the pH-zGeNRs can exhibit the antiferromagnetic ground state and a band gap about 0.2 eV(much smaller than those of fH-zGeNRs), where the hydrogenation ratio has almost no effect on the band gap. Contrastively, all of the pH-aGeNRs are nonmagnetic semiconductors with the three-families-behavior(N_a=3p, 3p+1 and 3p+2), and their band gaps can be almost same as the prinstine aGeNRs, whose ribbon width is equal to the unhydrogenated part of correlative pH-aGeNR. Obviously, the hydrogenation is an effective approach to tune the band structure of GeNRs, which will be advantageous for promoting Ge-based nanomaterials in the application of multifunctional nanodevices.
By the means of first-principles computations, we investigated the geometries, stabilities, electronic and magnetic properties of fully and partially hydrogenated germanium nanoribbons(GeNRs). Independent of chirality and ribbon width, all of the fully hydrogenated GeNRs(fH-GeNRs) can exhibit the non-magnetic semiconducting characteristic with a band-gap of 1.156~1.846 eV, where their band-gap slightly decreases with the increase of ribbon width. By hydrogenating GeNRs from both the edges to center step by step, we also obtained partially hydrogenated zigzag GeNRs(pH-zGeNRs) and armchair ones(pH-aGeNRs), which can be viewed as the combination of hydrogenated and pristine GeNRs. Our computational results reveal that the different electronic and magnetic proerties can be observed between pH-zGeNRs and pH-aGeNRs. Specifically, the pH-zGeNRs can exhibit the antiferromagnetic ground state and a band gap about 0.2 eV(much smaller than those of fH-zGeNRs), where the hydrogenation ratio has almost no effect on the band gap. Contrastively, all of the pH-aGeNRs are nonmagnetic semiconductors with the three-families-behavior(N_a=3p, 3p+1 and 3p+2), and their band gaps can be almost same as the prinstine aGeNRs, whose ribbon width is equal to the unhydrogenated part of correlative pH-aGeNR. Obviously, the hydrogenation is an effective approach to tune the band structure of GeNRs, which will be advantageous for promoting Ge-based nanomaterials in the application of multifunctional nanodevices.
引文