磁性掺杂的过渡金属硫属化合物的能谷极化
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- 英文论文题名：Valley polarization in magnetic doped transition metal dichalcogenides
- 论文作者：程迎春 ; 朱志永 ; 张青云 ; Udo Schwingenschl?gl
- 英文论文作者：Yingchun Cheng ; Zhiyong Zhu ; Qingyun Zhang ; Udo Schwingenschl?gl ; Key Laboratory of Flexible Electronics(KLOFE)&Institute of Advanced Materials(IAM) ; Jiangsu National Synergistic Innovation Center for Advanced Materials(SICAM) ; Nanjing Tech University(Nanjing Tech) ; PSE Division ; KAUST
- 年：2016
- 作者机构：柔性电子重点实验室,先进材料研究院,江苏先进生物与化学制造协同创新中心,南京工业大学;物理科学与工程系,阿卜杜拉国王科技大学;
- 论文关键词：过渡金属硫属化合物 ; 自旋电子学 ; 能谷电子学 ; 磁性掺杂 ; 第一性原理计算
- 会议召开时间：2016-07-01
- 会议录名称：中国化学会第30届学术年会摘要集-第十八分会：电子结构理论方法的发展与应用
- 语种：中文
- 分类号：TN304.2
- 学会代码：ZGHY
- 会议名称：中国化学会第30届学术年会-第十八分会 ; 电子结构理论方法的发展与应用
- 会议地点：中国辽宁大连
- 主办单位：中国化学会
- 学会名称：中国化学会
- 页数：2
- 文件大小：287k
- 原文格式：D
- 会议级别：全国
摘要
单层的MoS_2、MoTe_2和WSe_2等过渡金属硫属化合物是直接带隙半导体材料[1],近几年在基础研究和应用领域都引起了广泛的兴趣。我们发现单层过渡金属硫属化合物由于空间反演对称性破缺其布里渊区的K和K’能谷附近发生巨自旋劈裂,且两点处自旋劈裂的方向相反[2]。该类材料中耦合的自旋与能谷特性在自旋电子学和能谷电子学中都有潜在应用价值[3]。由于该类材料为三明治结构,中间一层为Mo或W原子,Mo或W原子容易被其他过渡金属元素取代。通过第一性原理计算,我们证明Mn元素的替代掺杂可以实现基于MoS_2的二维稀磁半导体[4]。进一步考虑材料中的自旋轨道耦合效应,我们发现该二维稀磁半导体具有能谷极化特性[5]。虽然自旋或能谷极化可以通过磁性掺杂来实现,但电子在传输过程中要受到杂质态的散射。为了避免杂质态散射的影响,我们研究了MoTe_2吸附于磁性半导体EuO这一系统,发现由于磁性近邻效应这一体系同样具有能谷极化的特点[6]。
Single layer transition metal dichalcogenides(TMDCs) are receiving immense interest both for fundamental and applied reasons because of their semiconducting nature with direct band gap.Due to inversion symmetry breaking Single layer TMDCs show spin splitting at the K and K' valleys.This property is essential for the field of spintronics and valleytronics.As the structure of TMDCs is sandwich-like with transition metal in the middle layer, it is promising to replace transition metal by other elements.By first-principles calculation, we demonstrated that the Mn doped MoS_2 systems are promising two-dimensional diluted magnetic semiconductors.In addition, we find the valley polarization in such system after considering spin-orbit interaction.Though the valley polarization can be induced by magnetic doping, the electronic transport will suffer from impurity scattering.To prevent the scattering issue, we designed MoTe_2 on EuO substrate system, and found valley polarization in such system because of the magnetic proximity effect.
Single layer transition metal dichalcogenides(TMDCs) are receiving immense interest both for fundamental and applied reasons because of their semiconducting nature with direct band gap.Due to inversion symmetry breaking Single layer TMDCs show spin splitting at the K and K' valleys.This property is essential for the field of spintronics and valleytronics.As the structure of TMDCs is sandwich-like with transition metal in the middle layer, it is promising to replace transition metal by other elements.By first-principles calculation, we demonstrated that the Mn doped MoS_2 systems are promising two-dimensional diluted magnetic semiconductors.In addition, we find the valley polarization in such system after considering spin-orbit interaction.Though the valley polarization can be induced by magnetic doping, the electronic transport will suffer from impurity scattering.To prevent the scattering issue, we designed MoTe_2 on EuO substrate system, and found valley polarization in such system because of the magnetic proximity effect.
引文
[1]Mak,K.F.;Lee,C.;Hone,J.;Shan,J.;Heinz,T.F.Phys.Rev.Lett.2010,105:136805
[2]Zhu,Z.Y.;Cheng,Y.C.;Schwingenschl?gl,U.Phys.Rev.B 2011,84:153402
[3]Xiao,D.;Liu,G.-B.;Feng,W.X.:Xu,X.D.;Yao,W.Phys.Rev.Lett.2012,108:196802
[4]Cheng,Y.C.;Zhu,Z.Y.;Mi,W.B.;Z.B.Guo,and U.Schwingenschl?gl,Phys.Rev.B 2013,87:100401(R)
[5]Cheng,Y.C.;Zhang,Q.Y.;Schwingenschl?gl,U.Phys.Rev.B 2014,89:155429
[6]Zhang,Q.Y.;Yang,S.Y.A.;Mi,W.B.;Cheng,Y.C.;Schwingenschl?gl,U.Adv.Mater.2016,28:959
[2]Zhu,Z.Y.;Cheng,Y.C.;Schwingenschl?gl,U.Phys.Rev.B 2011,84:153402
[3]Xiao,D.;Liu,G.-B.;Feng,W.X.:Xu,X.D.;Yao,W.Phys.Rev.Lett.2012,108:196802
[4]Cheng,Y.C.;Zhu,Z.Y.;Mi,W.B.;Z.B.Guo,and U.Schwingenschl?gl,Phys.Rev.B 2013,87:100401(R)
[5]Cheng,Y.C.;Zhang,Q.Y.;Schwingenschl?gl,U.Phys.Rev.B 2014,89:155429
[6]Zhang,Q.Y.;Yang,S.Y.A.;Mi,W.B.;Cheng,Y.C.;Schwingenschl?gl,U.Adv.Mater.2016,28:959