HIGH TEMPERATURE PIEZOELECTRIC SINGLE CRYSTALS: RECENT DEVELOPMENTS
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- 英文论文题名：HIGH TEMPERATURE PIEZOELECTRIC SINGLE CRYSTALS: RECENT DEVELOPMENTS
- 论文作者：Fa-peng YU ; Fei-fei CHEN ; Shuai HOU ; He-wei WANG ; Shi-wei TIAN ; Shu-jun ZHANG ; Xian ZHAO
- 英文论文作者：Fa-peng YU ; Fei-fei CHEN ; Shuai HOU ; He-wei WANG ; Shi-wei TIAN ; Shu-jun ZHANG ; Xian ZHAO ; Institute of Crystal Materials ; Shandong University ; ISEM ; University of Wollongong
- 年：2016
- 作者机构：Institute of Crystal Materials, Shandong University;ISEM, University of Wollongong;
- 英文论文关键词：Piezoelectric crystal ; High temperature ; Sensor
- 会议召开时间：2016-10-21
- 会议录名称：2016年全国压电和声波理论及器件应用研讨会论文摘要集
- 英文会议录名称：Abstract Book of 2016 Symposium on Piezoelectricity, Acoustic Waves and Device Applications
- 语种：英文
- 分类号：TM22
- 学会代码：AGLU
- 会议名称：2016年全国压电和声波理论及器件应用研讨会
- 会议地点：中国陕西西安
- 主办单位：中国力学学会、中国声学学会、IEEE UFFC分会
- 学会名称：中国力学学会
- 页数：2
- 文件大小：95k
- 原文格式：D
- 会议级别：全国
摘要
Background, Motivation and Objective High temperature piezoelectric materials functional at harsh environment without failure are desired for structural health monitoring and/or nondestructive evaluation of the modern aerospace structures at elevated temperatures(>600℃). In addition, high temperature piezoelectric materials will also benefit the safety of electrical/nuclear power plants and energy storage facilities. Of all the researched high temperature piezoelectric materials, piezoelectric single crystals have stirred lots of interests. It is evident that the operational temperature range of the piezoelectric crystals based sensors is usually limited by the sensing capability of the piezoelectric crystals at harsh environment, the conductivity, mechanical attenuation, and variation of the piezoelectric properties with temperature etc. This report will discuss the growth and electro-elastic properties of different high temperature piezoelectric crystals. Statement of Contribution/Methods Different piezoelectric crystals, including langasite family crystals, melilite crystals, fresnoite crystals and oxyborate crystals are surveyed and introduced in this paper. These crystals are congruent and can be readily grown by using the Czochralski(Cz), Bridgeman(Bg) and Top Seeded Solution Growth(TSSG) methods. The dielectric, elastic, electromechanical and piezoelectric properties of these crystals were evaluated by using the impedance method and compared for high temperature piezoelectric sensor applications. Results The properties of different piezoelectric crystals operational at elevated temperatures are obtained. In the trigonal system, the LiNbO_3(LN) in point group 3m was determined to possess high piezoelectric coefficient d22, being 20 p C/N at room temperature. However, their low resistivity and Li evaporation initiated around 300 ℃ restrict their operation lower than ~600℃. Differently, the structural ordered Ca_3TaGa_3Si_2O_(14)(CTGS) and Ca_3TaAl_3Si_2O_(14)(CTAS) crystals with point group 32 in langasite family, though show moderate piezoelectric properties with effective d33 value being on the order of 4~5p C/N(slightly lower than La_3Ga_(5.5)Ta_(0.5)O_(14), LGT crystal), their up-limit of operational temperature range was found up to 900 ℃, benefit from their low dielectric loss and relative good temperature stability of piezoelectric performances, where the CTGS crystals exhibited more attractive high temperature piezoelectric behaviors. In the newly developed high temperature piezoelectric crystals in tetragonal system, the piezoelectric crystals Sr La Ga_3O_7(SLG) and Ca_2Al_2SiO_7(CAS) in point group-42 m, and Ba_2TiSi_2O_8(BTS) in point group 4mm have been studied. These crystals were reported to possess high melting point above ~1400℃, and own piezoelectric coefficients higher than langasite type crystals. Among these crystals in tetragonal system, the BTS crystals were reported to show low dielectric loss(<10%) and high resistivity(>106Ωcm) at 700 ℃, nevertheless, an anomaly was observed around 100 ℃ ~200℃ for both the dielectric permittivity and piezoelectric coefficients. It is worthy to mention that the CAS crystals with much lower cost than SLG were also found to possess moderate piezoelectric coefficients with usage temperature up to 500 ℃, however, the cleavage becomes the biggest challenge for piezoelectric applications. The piezoelectric crystals in monoclinic system, including the BiB_3O_6(BIBO) in point group m and RECa_4O(BO_3)_3(RECOB) crystals in point group 2, are found to possess attractive dielectric and piezoelectric properties, where the BIBO crystal grown by using the Top-Seeded Solution Growth Method was determined to show high piezoelectric coefficient d_(22) being on the order of 40 p C/N, two times that of LN crystal, and high resistivity prior to its melting point ~720℃, showing the potentials for mid-high temperature application. More interesting, the RECOB(RE: Y and rare-earth elements) crystals were revealed to possess even stable dielectric and piezoelectric properties up to 1000 ℃, with high resistivity >106Ωcm and low dielectric loss <0.3 at 1000 ℃. Particularly, the variation of piezoelectric coefficients were determined to be lower than 10% over the temperature range of 20～1000℃. Discussion and Conclusions Considering the high temperature dielectric loss, resistivity and temperature stability of dielectric and piezoelectric properties of currently studied piezoelectric crystals, it is reasonable to draw the conclusions for the above discussed high temperature piezoelectric crystals. Based on their electro-elastic properties and individual advantages, the LGT and BIBO crystals are promising for use at mid-high temperature range(lower than 600～700℃). Though the effective piezoelectric coefficient d_(11) or d_(33) for CTGS and RECOB crystals lower than 6p C/N, the usage temperature range could reach up to 900 ℃ and 1000 ℃, respectively. Due to their distinctive advantages, the CTGS and RECOB crystals might be an optimum choice for ultrahigh temperature piezoelectric application.
Background, Motivation and Objective High temperature piezoelectric materials functional at harsh environment without failure are desired for structural health monitoring and/or nondestructive evaluation of the modern aerospace structures at elevated temperatures(>600℃). In addition, high temperature piezoelectric materials will also benefit the safety of electrical/nuclear power plants and energy storage facilities. Of all the researched high temperature piezoelectric materials, piezoelectric single crystals have stirred lots of interests. It is evident that the operational temperature range of the piezoelectric crystals based sensors is usually limited by the sensing capability of the piezoelectric crystals at harsh environment, the conductivity, mechanical attenuation, and variation of the piezoelectric properties with temperature etc. This report will discuss the growth and electro-elastic properties of different high temperature piezoelectric crystals. Statement of Contribution/Methods Different piezoelectric crystals, including langasite family crystals, melilite crystals, fresnoite crystals and oxyborate crystals are surveyed and introduced in this paper. These crystals are congruent and can be readily grown by using the Czochralski(Cz), Bridgeman(Bg) and Top Seeded Solution Growth(TSSG) methods. The dielectric, elastic, electromechanical and piezoelectric properties of these crystals were evaluated by using the impedance method and compared for high temperature piezoelectric sensor applications. Results The properties of different piezoelectric crystals operational at elevated temperatures are obtained. In the trigonal system, the LiNbO_3(LN) in point group 3m was determined to possess high piezoelectric coefficient d22, being 20 p C/N at room temperature. However, their low resistivity and Li evaporation initiated around 300 ℃ restrict their operation lower than ~600℃. Differently, the structural ordered Ca_3TaGa_3Si_2O_(14)(CTGS) and Ca_3TaAl_3Si_2O_(14)(CTAS) crystals with point group 32 in langasite family, though show moderate piezoelectric properties with effective d33 value being on the order of 4~5p C/N(slightly lower than La_3Ga_(5.5)Ta_(0.5)O_(14), LGT crystal), their up-limit of operational temperature range was found up to 900 ℃, benefit from their low dielectric loss and relative good temperature stability of piezoelectric performances, where the CTGS crystals exhibited more attractive high temperature piezoelectric behaviors. In the newly developed high temperature piezoelectric crystals in tetragonal system, the piezoelectric crystals Sr La Ga_3O_7(SLG) and Ca_2Al_2SiO_7(CAS) in point group-42 m, and Ba_2TiSi_2O_8(BTS) in point group 4mm have been studied. These crystals were reported to possess high melting point above ~1400℃, and own piezoelectric coefficients higher than langasite type crystals. Among these crystals in tetragonal system, the BTS crystals were reported to show low dielectric loss(<10%) and high resistivity(>106Ωcm) at 700 ℃, nevertheless, an anomaly was observed around 100 ℃ ~200℃ for both the dielectric permittivity and piezoelectric coefficients. It is worthy to mention that the CAS crystals with much lower cost than SLG were also found to possess moderate piezoelectric coefficients with usage temperature up to 500 ℃, however, the cleavage becomes the biggest challenge for piezoelectric applications. The piezoelectric crystals in monoclinic system, including the BiB_3O_6(BIBO) in point group m and RECa_4O(BO_3)_3(RECOB) crystals in point group 2, are found to possess attractive dielectric and piezoelectric properties, where the BIBO crystal grown by using the Top-Seeded Solution Growth Method was determined to show high piezoelectric coefficient d_(22) being on the order of 40 p C/N, two times that of LN crystal, and high resistivity prior to its melting point ~720℃, showing the potentials for mid-high temperature application. More interesting, the RECOB(RE: Y and rare-earth elements) crystals were revealed to possess even stable dielectric and piezoelectric properties up to 1000 ℃, with high resistivity >106Ωcm and low dielectric loss <0.3 at 1000 ℃. Particularly, the variation of piezoelectric coefficients were determined to be lower than 10% over the temperature range of 20～1000℃. Discussion and Conclusions Considering the high temperature dielectric loss, resistivity and temperature stability of dielectric and piezoelectric properties of currently studied piezoelectric crystals, it is reasonable to draw the conclusions for the above discussed high temperature piezoelectric crystals. Based on their electro-elastic properties and individual advantages, the LGT and BIBO crystals are promising for use at mid-high temperature range(lower than 600～700℃). Though the effective piezoelectric coefficient d_(11) or d_(33) for CTGS and RECOB crystals lower than 6p C/N, the usage temperature range could reach up to 900 ℃ and 1000 ℃, respectively. Due to their distinctive advantages, the CTGS and RECOB crystals might be an optimum choice for ultrahigh temperature piezoelectric application.
Background, Motivation and Objective High temperature piezoelectric materials functional at harsh environment without failure are desired for structural health monitoring and/or nondestructive evaluation of the modern aerospace structures at elevated temperatures(>600℃). In addition, high temperature piezoelectric materials will also benefit the safety of electrical/nuclear power plants and energy storage facilities. Of all the researched high temperature piezoelectric materials, piezoelectric single crystals have stirred lots of interests. It is evident that the operational temperature range of the piezoelectric crystals based sensors is usually limited by the sensing capability of the piezoelectric crystals at harsh environment, the conductivity, mechanical attenuation, and variation of the piezoelectric properties with temperature etc. This report will discuss the growth and electro-elastic properties of different high temperature piezoelectric crystals. Statement of Contribution/Methods Different piezoelectric crystals, including langasite family crystals, melilite crystals, fresnoite crystals and oxyborate crystals are surveyed and introduced in this paper. These crystals are congruent and can be readily grown by using the Czochralski(Cz), Bridgeman(Bg) and Top Seeded Solution Growth(TSSG) methods. The dielectric, elastic, electromechanical and piezoelectric properties of these crystals were evaluated by using the impedance method and compared for high temperature piezoelectric sensor applications. Results The properties of different piezoelectric crystals operational at elevated temperatures are obtained. In the trigonal system, the LiNbO_3(LN) in point group 3m was determined to possess high piezoelectric coefficient d22, being 20 p C/N at room temperature. However, their low resistivity and Li evaporation initiated around 300 ℃ restrict their operation lower than ~600℃. Differently, the structural ordered Ca_3TaGa_3Si_2O_(14)(CTGS) and Ca_3TaAl_3Si_2O_(14)(CTAS) crystals with point group 32 in langasite family, though show moderate piezoelectric properties with effective d33 value being on the order of 4~5p C/N(slightly lower than La_3Ga_(5.5)Ta_(0.5)O_(14), LGT crystal), their up-limit of operational temperature range was found up to 900 ℃, benefit from their low dielectric loss and relative good temperature stability of piezoelectric performances, where the CTGS crystals exhibited more attractive high temperature piezoelectric behaviors. In the newly developed high temperature piezoelectric crystals in tetragonal system, the piezoelectric crystals Sr La Ga_3O_7(SLG) and Ca_2Al_2SiO_7(CAS) in point group-42 m, and Ba_2TiSi_2O_8(BTS) in point group 4mm have been studied. These crystals were reported to possess high melting point above ~1400℃, and own piezoelectric coefficients higher than langasite type crystals. Among these crystals in tetragonal system, the BTS crystals were reported to show low dielectric loss(<10%) and high resistivity(>106Ωcm) at 700 ℃, nevertheless, an anomaly was observed around 100 ℃ ~200℃ for both the dielectric permittivity and piezoelectric coefficients. It is worthy to mention that the CAS crystals with much lower cost than SLG were also found to possess moderate piezoelectric coefficients with usage temperature up to 500 ℃, however, the cleavage becomes the biggest challenge for piezoelectric applications. The piezoelectric crystals in monoclinic system, including the BiB_3O_6(BIBO) in point group m and RECa_4O(BO_3)_3(RECOB) crystals in point group 2, are found to possess attractive dielectric and piezoelectric properties, where the BIBO crystal grown by using the Top-Seeded Solution Growth Method was determined to show high piezoelectric coefficient d_(22) being on the order of 40 p C/N, two times that of LN crystal, and high resistivity prior to its melting point ~720℃, showing the potentials for mid-high temperature application. More interesting, the RECOB(RE: Y and rare-earth elements) crystals were revealed to possess even stable dielectric and piezoelectric properties up to 1000 ℃, with high resistivity >106Ωcm and low dielectric loss <0.3 at 1000 ℃. Particularly, the variation of piezoelectric coefficients were determined to be lower than 10% over the temperature range of 20～1000℃. Discussion and Conclusions Considering the high temperature dielectric loss, resistivity and temperature stability of dielectric and piezoelectric properties of currently studied piezoelectric crystals, it is reasonable to draw the conclusions for the above discussed high temperature piezoelectric crystals. Based on their electro-elastic properties and individual advantages, the LGT and BIBO crystals are promising for use at mid-high temperature range(lower than 600～700℃). Though the effective piezoelectric coefficient d_(11) or d_(33) for CTGS and RECOB crystals lower than 6p C/N, the usage temperature range could reach up to 900 ℃ and 1000 ℃, respectively. Due to their distinctive advantages, the CTGS and RECOB crystals might be an optimum choice for ultrahigh temperature piezoelectric application.
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