一例具有自旋交叉与半导体行为的含铁(Ⅱ)化合物
详细信息 查看官网全文
- 英文论文题名：A Fe~(Ⅱ) compound with spin-crossover and semiconducting behavior
- 论文作者：张佳业 ; 陶军
- 英文论文作者：Jiaye Zhang ; Jun Tao ; State Key Laboratory of Physical Chemistry of Solid Surfaces and College of Chemistry and Chemical Engineering ; Xiamen University
- 年：2016
- 作者机构：固体表面物理化学国家重点实验室厦门大学化学化工学院;
- 论文关键词：自旋交叉 ; 半导体 ; 磁性
- 会议召开时间：2016-07-01
- 会议录名称：中国化学会第30届学术年会摘要集-第十六分会：晶体工程
- 语种：中文
- 分类号：O643.32
- 学会代码：ZGHY
- 会议名称：中国化学会第30届学术年会-第十六分会 ; 晶体工程
- 会议地点：中国辽宁大连
- 主办单位：中国化学会
- 学会名称：中国化学会
- 页数：1
- 文件大小：346k
- 原文格式：D
- 会议级别：全国
摘要
在外界条件的影响下,一些处于六配位环境中的第一过渡金属3d~n(n=4-7)会发生自旋交叉现象,此现象在高低自旋态转变过程中可引起可观的结构变化。基于分子基材料的电子导电性对于压力极为敏感,故自旋交叉分子可作为调控电子导电性的理想工具。我们在这里报道一例新颖的自旋交叉半导体配合物1,其展现出完全的高低自旋态转变现象并成功地将导电自由基离子(TCNQ~(δ-))引入Fe~Ⅱ自旋交叉体系中。
Some first-row transition-metal ions with 3d~n(n=4-7) in six-coordinate environments exhibit a spin-crossover(SCO) phenomena,associated with extensive structural changes between the low-spin(HS) and high-spin(LS) states,which can and do act as powerful tools for the electrical conductivity,as electrical conductivity in molecule-based material is sensitive to chemical pressures.In the present work,a novel SCO semiconductor 1,which exhibits an almost complete spin transition between the low-spin(HS) and high-spin(LS) states and introduces a radical anion,TCNQ~(δ-),into a spin-crossover Fe~Ⅱ center successfully.
Some first-row transition-metal ions with 3d~n(n=4-7) in six-coordinate environments exhibit a spin-crossover(SCO) phenomena,associated with extensive structural changes between the low-spin(HS) and high-spin(LS) states,which can and do act as powerful tools for the electrical conductivity,as electrical conductivity in molecule-based material is sensitive to chemical pressures.In the present work,a novel SCO semiconductor 1,which exhibits an almost complete spin transition between the low-spin(HS) and high-spin(LS) states and introduces a radical anion,TCNQ~(δ-),into a spin-crossover Fe~Ⅱ center successfully.
引文
[1]O.Sato,Z,Li,Z Yao,S.Kang,S,Kanegawa,Spin-crossover Materials:Properties and Application,First Edition(Eds:Malcolm A.Halcrow),Wiley-VCH,Publisher Inc.,2013,pp.302-303.
[2]Sato,O.;Tao,J.;Zhang,Y.Z.Angew.Chem.Int.Ed.2007,46,2152-2187.
[2]Sato,O.;Tao,J.;Zhang,Y.Z.Angew.Chem.Int.Ed.2007,46,2152-2187.