摘要
As one type of organic–inorganic hybrid material, APbX_3 organic–inorganic lead perovskite materials have attracted considerable attention in optoelectronic applications.Although organic–inorganic lead perovskites possess high solar-to-electrical conversion efficiency, the toxic Pb in organic–inorganic lead perovskites is expected to cause environmental pollution in future mass applications.Thus, exploiting Pb-free organic–inorganic hybrid materials is urgently needed.In this study, a lead-free and amorphous CH_3NH_3MnI_3(a-MAMnI_3) thin film was prepared by spin coating mixed MnI_2 and MAI precursor solution on an electronic transport layer(ETL)-TiO_2.Mesoscopic a-MAMnI 3/TiO_2 heterojunction was formed by filling the mesoporous TiO_2 layer with MAMnI_3.The architecture of the optoelectronic device is FTO/ETL-TiO_2/a-MAMnI_3/Spiro-MeOTAD/Ag.The photovoltage of the optoelectronic device based on the mesoscopic a-MAMnI_3/TiO_2 heterojunction reached 300 mV under AM1.5, 100 mW cm~(-2) simulated illumination.The evident photoresponse was observed at 530 nm green light.The test with 2,000 s on/off cycling indicated the good stability and repeatability of the device.The findings pave a way for realizing Pb-free and amorphous organic–inorganic hybrid material applied to optoelectronic logic devices, photodetectors, and optical memory devices.
As one type of organic–inorganic hybrid material, APbX_3 organic–inorganic lead perovskite materials have attracted considerable attention in optoelectronic applications.Although organic–inorganic lead perovskites possess high solar-to-electrical conversion efficiency, the toxic Pb in organic–inorganic lead perovskites is expected to cause environmental pollution in future mass applications.Thus, exploiting Pb-free organic–inorganic hybrid materials is urgently needed.In this study, a lead-free and amorphous CH_3NH_3MnI_3(a-MAMnI_3) thin film was prepared by spin coating mixed MnI_2 and MAI precursor solution on an electronic transport layer(ETL)-TiO_2.Mesoscopic a-MAMnI 3/TiO_2 heterojunction was formed by filling the mesoporous TiO_2 layer with MAMnI_3.The architecture of the optoelectronic device is FTO/ETL-TiO_2/a-MAMnI_3/Spiro-MeOTAD/Ag.The photovoltage of the optoelectronic device based on the mesoscopic a-MAMnI_3/TiO_2 heterojunction reached 300 mV under AM1.5, 100 mW cm~(-2) simulated illumination.The evident photoresponse was observed at 530 nm green light.The test with 2,000 s on/off cycling indicated the good stability and repeatability of the device.The findings pave a way for realizing Pb-free and amorphous organic–inorganic hybrid material applied to optoelectronic logic devices, photodetectors, and optical memory devices.
引文
[1]Zhonghao Nie,Jie Yin,Huawei Zhou,Ning Chai,Baoli Chen,Yingtian Zhang,Konggang Qu,Guodong Shen,Huiyan Ma,Yuchao Li,Jinsheng Zhao,and Xianxi Zhang ACS Appl.Mater.Interfaces 2016,8,28187-28193