GaN-based light-emitting diodes on various substrates
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- 英文论文题名：GaN-based light-emitting diodes on various substrates
- 论文作者：Guoqiang Li ; Wenliang Wang ; Yunhao Lin ; Haiyan Wang ; Zhiting Lin
- 英文论文作者：Guoqiang Li ; Wenliang Wang ; Yunhao Lin ; Haiyan Wang ; Zhiting Lin ; State Key Laboratory of Luminescent Materials and Devices ; South China University of Technology ; Department of Electronic Materials ; South China University of Technology ; Department of Electronic Materials ; School of Materials Science and Engineering ; South China University of Technology
- 年：2016
- 作者机构：State Key Laboratory of Luminescent Materials and Devices, South China University of Technology;Department of Electronic Materials, South China University of Technology;Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology;
- 英文论文关键词：GaN ; Light-emitting diodes ; Substrates ; Crystalline defects ; Nonpolar
- 会议召开时间：2016-12-19
- 会议录名称：中国晶体学会第六届学术年会暨会员代表大会（非线性光学及激光晶体材料分会）论文摘要集
- 英文会议录名称：Abstracts of the 6th Annual Conference of Chinese Crystallographic Society
- 语种：英文
- 分类号：TN312.8
- 学会代码：ZGJY
- 会议名称：中国晶体学会第六届学术年会暨会员代表大会（非线性光学及激光晶体材料分会）
- 会议地点：中国广东广州
- 主办单位：中国晶体学会
- 学会名称：中国晶体学会
- 页数：1
- 文件大小：184k
- 原文格式：D
- 会议级别：全国
摘要
GaN and related Ⅲ-nitrides have attracted remarkable attentions aspromising materials for applications in optoelectronic devices, in particular, light-emitting diodes(LEDs). At present, sapphire is still the most popular commercial substrates for epitaxial growth of GaN-based LEDs. However, due to its relatively large lattice mismatch with GaN and low thermal conductivity, sapphire is not the most ideal substrate for GaN-based LEDs. Therefore, in order to obtain high-performance and high-power LEDs with relatively low cost, unconventional substrates different from sapphire, which are of low lattice mismatch with GaN, high thermal conductivity and low cost, have been tried as substitutes for sapphire. As a matter of fact, it is not easy to obtain high-quality Ⅲ-nitride films on those substrates due to various reasons. However, by developing a variety of techniques, distinctive progresses have been made during the last decade, with high-performance LEDs being successfully achieved on these unconventional substrates. This review focuses on the state-of-the-art of high-performance GaN-based LED materials and devices on unconventional substrates. The issues involved in the growth of GaN-based LED structures on each type of unconventional substrate are outlined, and the fundamental physics behind these issues are detailed. The corresponding solutions for Ⅲ-nitride growth, defect control, and chip processing for each type of unconventional substrate are discussed in depth, together with a brief introduction to some newly developed techniques in order to realize LED structures on unconventional substrates, which is very useful to understand the progress of physics in this field. The prospects of LEDs on unconventional substrates are also speculated in this report.
GaN and related Ⅲ-nitrides have attracted remarkable attentions aspromising materials for applications in optoelectronic devices, in particular, light-emitting diodes(LEDs). At present, sapphire is still the most popular commercial substrates for epitaxial growth of GaN-based LEDs. However, due to its relatively large lattice mismatch with GaN and low thermal conductivity, sapphire is not the most ideal substrate for GaN-based LEDs. Therefore, in order to obtain high-performance and high-power LEDs with relatively low cost, unconventional substrates different from sapphire, which are of low lattice mismatch with GaN, high thermal conductivity and low cost, have been tried as substitutes for sapphire. As a matter of fact, it is not easy to obtain high-quality Ⅲ-nitride films on those substrates due to various reasons. However, by developing a variety of techniques, distinctive progresses have been made during the last decade, with high-performance LEDs being successfully achieved on these unconventional substrates. This review focuses on the state-of-the-art of high-performance GaN-based LED materials and devices on unconventional substrates. The issues involved in the growth of GaN-based LED structures on each type of unconventional substrate are outlined, and the fundamental physics behind these issues are detailed. The corresponding solutions for Ⅲ-nitride growth, defect control, and chip processing for each type of unconventional substrate are discussed in depth, together with a brief introduction to some newly developed techniques in order to realize LED structures on unconventional substrates, which is very useful to understand the progress of physics in this field. The prospects of LEDs on unconventional substrates are also speculated in this report.
GaN and related Ⅲ-nitrides have attracted remarkable attentions aspromising materials for applications in optoelectronic devices, in particular, light-emitting diodes(LEDs). At present, sapphire is still the most popular commercial substrates for epitaxial growth of GaN-based LEDs. However, due to its relatively large lattice mismatch with GaN and low thermal conductivity, sapphire is not the most ideal substrate for GaN-based LEDs. Therefore, in order to obtain high-performance and high-power LEDs with relatively low cost, unconventional substrates different from sapphire, which are of low lattice mismatch with GaN, high thermal conductivity and low cost, have been tried as substitutes for sapphire. As a matter of fact, it is not easy to obtain high-quality Ⅲ-nitride films on those substrates due to various reasons. However, by developing a variety of techniques, distinctive progresses have been made during the last decade, with high-performance LEDs being successfully achieved on these unconventional substrates. This review focuses on the state-of-the-art of high-performance GaN-based LED materials and devices on unconventional substrates. The issues involved in the growth of GaN-based LED structures on each type of unconventional substrate are outlined, and the fundamental physics behind these issues are detailed. The corresponding solutions for Ⅲ-nitride growth, defect control, and chip processing for each type of unconventional substrate are discussed in depth, together with a brief introduction to some newly developed techniques in order to realize LED structures on unconventional substrates, which is very useful to understand the progress of physics in this field. The prospects of LEDs on unconventional substrates are also speculated in this report.
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