Modification of optical and electrical properties of sol-gel-derived TiO_2-doped ZrO_2 gate dielectrics by annealing temperature
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- 英文论文题名：Modification of optical and electrical properties of sol-gel-derived TiO_2-doped ZrO_2 gate dielectrics by annealing temperature
- 论文作者：D.Q.Xiao ; G.He ; J.Gao ; J.G.Lv ; Z.Q.Sun
- 英文论文作者：D.Q.Xiao ; G.He ; J.Gao ; J.G.Lv ; Z.Q.Sun ; School of physics and Materials Science ; Radiation Detection Materials & Devices Lab ; Anhui University ; School of Sciences ; Anhui University of Science and Technology ; Department of Physics and Electronic Engineering ; Hefei Normal University
- 年：2016
- 作者机构：School of physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University;School of Sciences, Anhui University of Science and Technology;Department of Physics and Electronic Engineering, Hefei Normal University;
- 英文论文关键词：High-k gate dielectrics ; Optical constant ; Electrical properties ; Ti incorporation ; Sol-gel ; Conduction mechanisms
- 会议召开时间：2016-10-21
- 会议录名称：安徽省第四届（2016年）“卓凌杯”真空科技青年创新大赛暨学术研讨会论文集
- 语种：英文
- 分类号：TQ134.12
- 学会代码：AHZK
- 会议名称：安徽省第四届（2016年）“卓凌杯”真空科技青年创新大赛暨学术研讨会
- 会议地点：中国安徽安庆
- 主办单位：安徽省真空学会
- 学会名称：安徽省真空学会
- 页数：18
- 文件大小：1599k
- 原文格式：D
- 会议级别：地方
摘要
In this letter, annealing temperature dependence on the structure, band gap energy and electrical properties of TiO_2 doped ZrO_2 gate dielectrics deposited by sol-gel method at low temperature were systemically investigated. The crystalline temperature of TiO_2 doped ZrO_2 is up to 600 o C. The transmittance and band gap value of the ZrTiO_x film were about 75% and 4.0 e V,respectively. 300 o C-annealed ZrTiO_x MOS capacitor with high dielectric constant of 34.9, a small hysteresis value of 0.004 and low leakage current density of 2.7×10~(-4) A/cm~2 were obtained. The dominant conduction mechanisms of Al/ZrTiO_4/n-Si MOS structures were schottky emission and ohmic conduction in the low electric field and direct tunneling in the high electric field. As a result,it can be concluded that sol-gel derived ZrTiO_x gate dielectric displays potential application as is a promising candidate in future MOS electronic devices.
In this letter, annealing temperature dependence on the structure, band gap energy and electrical properties of TiO_2 doped ZrO_2 gate dielectrics deposited by sol-gel method at low temperature were systemically investigated. The crystalline temperature of TiO_2 doped ZrO_2 is up to 600 o C. The transmittance and band gap value of the ZrTiO_x film were about 75% and 4.0 e V,respectively. 300 o C-annealed ZrTiO_x MOS capacitor with high dielectric constant of 34.9, a small hysteresis value of 0.004 and low leakage current density of 2.7×10~(-4) A/cm~2 were obtained. The dominant conduction mechanisms of Al/ZrTiO_4/n-Si MOS structures were schottky emission and ohmic conduction in the low electric field and direct tunneling in the high electric field. As a result,it can be concluded that sol-gel derived ZrTiO_x gate dielectric displays potential application as is a promising candidate in future MOS electronic devices.
In this letter, annealing temperature dependence on the structure, band gap energy and electrical properties of TiO_2 doped ZrO_2 gate dielectrics deposited by sol-gel method at low temperature were systemically investigated. The crystalline temperature of TiO_2 doped ZrO_2 is up to 600 o C. The transmittance and band gap value of the ZrTiO_x film were about 75% and 4.0 e V,respectively. 300 o C-annealed ZrTiO_x MOS capacitor with high dielectric constant of 34.9, a small hysteresis value of 0.004 and low leakage current density of 2.7×10~(-4) A/cm~2 were obtained. The dominant conduction mechanisms of Al/ZrTiO_4/n-Si MOS structures were schottky emission and ohmic conduction in the low electric field and direct tunneling in the high electric field. As a result,it can be concluded that sol-gel derived ZrTiO_x gate dielectric displays potential application as is a promising candidate in future MOS electronic devices.
引文
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[3]G.He,L.D.Zhang,G.W.Meng,G.H.Li,Q.Fang,J.P.Zhang,Temperature-dependent structural stability and optical properties of ultrathin Hf-Al-O films grown by facing-target reactive sputtering,J.Appl.Phys.102(2007)094103-1-094103-5.
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[7]A.Rao,A.Dwivedi,M.Goswami,B.R.Singh,Effect of nitrogen containing plasma on interface properties of sputtered Zr O2 thin films on silicon,Mat.Sci.Semicon.Proc.19(2014)145-149.
[8]P.S.Das,A.Biswas,Influence of post deposition annealing on Y2O3-gated Ga As MOS capacitors and their reliability issues,Microelectron.Eng.88(2011)282-286.
[9]S.Chakraborty,M.K.Bera,C.K.Maiti,Effects of annealing on the electrical properties of Ti O2 films deposited on Ge-rich Si Ge substrates,J.Appl.Phys.100(2006)023706-1-023706-6.
[10]W.Zhang,Y.Cui,Z.G.Hu,W.L.Yu,J.Sun,N.Xu,Z.F.Ying,J.D.Wu,Structural,optical and electrical properties of high-k Zr O2 dielectrics on Si prepared by plasma assisted pulsed laser deposition,Thin Solid Films 520(2012)6361-6367.
[11]S.Chang,R.Doong,Interband Transitions in Sol-Gel-Derived Zr O2 Films under Different Calcination Conditions,Chem.Mater.19(2007)4804-4810.
[12]Y.H.Wu,M.L.Wu,J.R.Wu,L.L.Chen,Ge-stabilized tetragonal Zr O2 as gate dielectric for Ge metal-oxide-semiconductor capacitors fabricated on Si substrate,Appl.Phys.Lett.97(2010)043503-1-043503-3.
[13]M.Liu,L.D.Zhang,G.He,X.J.Wang,M.Fang,Effect of Ti incorporation on the interfacial and optical properties of Hf Ti O thin film,J.Appl.Phys.108(2010)024102-1-024102-4.
[14]C.Y.Wu,C.H.Hsieh,C.W.Lee,Y.H.Wu,Crystalline Zr Ti O4 gated p-metal-oxide-semiconductor field effect transistors with sub-nm equivalent oxide thickness featuring good electrical characteristics and reliability,Appl.Phys.Lett.106(2015)053508-1-053508-4.
[15]C.H.Hsu,S.Y.Lin,Characterization of Zr Ti O4 thin films prepared by sol-gel method,Mat.Sci.Semicon.Proc.16(2013)1262-1266.
[16]A.George,S.Solomon,J.K.Thomas,Characterizations and electrical properties of Zr Ti Ox ceramic,A.John,Mater.Res.Bull.47(2012)3141-3147.
[17]D.Q.Xiao,G.He,Z.Q.Sun,J.G.Lv,P.Jin,C.Y.Zheng,M.Liu,Microstructure,optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application,Ceram.Int.42(2016)759-766.
[18]C.Chaneliere,S.Four,J.L.Autran,R.A.B.Devine,N.P.Sandler,Properties of amorphous and crystalline Ta2O5 thin films deposited on Si from a Ta(OC2H5)5 precursor,J.Appl.Phys.83(1998)4823-4829.
[19]S.J.Jo,J.S.Ha,N.K.Park,D.K.Kang,B.H.Kim,5 nm thick lanthanum oxide thin films grow on Si(100)by atomic layer deposition:The effect of post-annealing on the electrical properties,Thin Solid Films 513(2006)253-257.
[20]M.J.Yoon,M.J.Seo,C.Jeong,J.H.Jang,K.S.Jeon,Synthesis of Liposome-Templated Ti Tania Nanodisks:Optical Properties and Photocatalytic Activities,Chem.Mater.17(2005)6069-6079.
[21]M.F.Al-Kuhaili,S.M.A.Durrani,Effect of annealing on pulsed laser deposited zirconium oxide thin film,J.Alloy.Comp.509(2011)9536-9541.
[22]L.P.Liang,Y.G.Sheng,Y.Xu,D.Wu,Y.H.Sun,Optical properties of sol-gel derived Zr O2-Ti O2 composite films,Thin Solid Films 515(2007)7765-7771.
[23]Z.C.Wang,U.Helmersson,P.O.Kall,Optical properties of anatase Ti O2 thin films prepared by aqueous sol-gel process at low temperature,Thin solid film,405(2002)50-54.
[24]M.Liu,Q.Fang,G.He,L.Li,L.Q.Zhu,G.H.Li,L.D.Zhang,Effect of post deposition annealing on the optical properties of Hf Ox Ny films,Appl.Phys.Lett.88(2006)192904-1-192904-3.
[25]R.Arora,B.W.Schmidt,D.M.Fleetwood,R.D.Schrimpf,K.F.Galloway,B.R.Rogers,Temperature stress response of germanium MOS capacitors with Hf O2/Hf Si ON gate dielectrics,ECS Trans.19(2009)803-814.
[26]P.S.Das,A.Biswas,Influence of post deposition annealing on Y2O3-hated Ga As MOS capacitors and their reliability issues,Microelectron.Eng.88(2011)282-286.
[27]D.Y.Choi,S.J.Oh,Y.J.Chang,T.W.Noh,R.Jung,J.C.Lee,Role of oxygen vacancy in Hf O2/Si O2/Si(100)interfaces,Appl.Phys.Lett.88(2006)193502-1-193502-3.
[28]T.Yu,C.G.Jin,Y.J.Dong,D.Cao,L.J.Zhuge,X.M.Wu,Temperature dependence of electrical properties for MOS capacitor with Hf O2/Si O2 gate dielectric stack,Mat.Sci.Semicon.Proc.16(2013)1321-1327.
[29]I.S.Jeon,J.Park,D.Eom,C.S.Hwang,H.J.Kim,C.J.Park,H.Y.Cho,J.H.Lee,N.I.Lee,H.K.Kang,Post-Annealing Effects on Fixed Charge and Slow/Fast Interface of Ti N/Al2O3/p-Si metal-Oxide-Semiconductor Capacitor,Jpn.J.Appl.Phys.42(2003)1222-1226.
[30]J.W.Zhang,G.He,M.Liu,H.S.Chen,Y.M.Liu,Z.Q.Sun,X.S.Chen,Composition dependent interfacial thermal stability,band alignment and electrical properties of Hf1-x Tix O2/Si gate stacks,Appl.Surf.Sci.346(2015)489-496.
[31]B.Chakrabarti,E.M.Vogel,Effect of Ti doping and annealing on multi-level forming-free resistive random access memories with atomic layer deposited Hf Ti Ox nanolaminate,Microelectron.Eng.109(2013)193-196.
[32]Y.H.Wu,M.L.Wu,J.R.Wu,Y.S.Lin,Electrical characteristics of Ge MOS device on Si substrate with thermal Si ON as gate dielectric,Microelectron.Eng.87(2010)2423-2428.
[33]Z.Xu,M.Houssa,S.D.Gendt,M.Heyns,Polarity effect on the temperature dependence of leakage current through Hf O2/Si O2 gate dielectric stacks,Appl.Phys.Lett.80(2002)1975-1977.
[34]F.C.Chiu,A Review on Conduction Mechanisms in Dielectric Films,Adv.Mater.Sci.Eng.2014(2014)578168-578185.
[35]N.Umezawa,K.Shiraishi,K.Torii,M.Boero,T.Chikyow,H.Watanabe,K.Yamabe,T.Ohno,K.Yamada,Y.Nara,Role of NItrogen Atoms in Reduction of Electron Charge Traps in Hf-Based High-k Dielectrics,IEEE Electr.Device.L.28(2007)363-365.
[36]J.Q.Zhang,Z.X.Li,H.Zhou,C.Ye,H.Wang,Electrical,optical and micro-structural properties of ultra-thin Hf Ti ON films,Appl.Surf.Sci.294(2014)58-65.
[2]G.He,L.Q.Zhu,Z.Q.Sun,Q.Wan,L.D.Zhang,Integrations and challenges of novel high-k gate stacks in advanced CMOS technology,Prog.Mater.Sci.56(2011)475-572.
[3]G.He,L.D.Zhang,G.W.Meng,G.H.Li,Q.Fang,J.P.Zhang,Temperature-dependent structural stability and optical properties of ultrathin Hf-Al-O films grown by facing-target reactive sputtering,J.Appl.Phys.102(2007)094103-1-094103-5.
[4]C.S.Pang,J.G.Hwu,Photo-induced tunneling currents in MOS structures with various Hf O2/Si O2 stacking dielectrics,AIP Adv.4(2014)047112-1-047112-10.
[5]Z.G.Xu,Z.L.Huo,C.X.Zhu,Y.X.Cui,M.Wang,Z.W.Zheng,J.Liu,Y.M.Wang,F.H.Li,M.Liu,Performance-improved nonvolatile memory with aluminum nanocrystals embedded in Al2O3 for high temperature applications,J.Appl.Phys.110(2011)104514-1-104514-5.
[6]P.M.Tirmali,A.G.Khairnar,B.N.Joshi,A.M.Mahajan,Structural and electricalcharacteristics of RF-sputtered Hf O2 high-k based MOS capacitors,Solid State Electron.62(2011)44-47.
[7]A.Rao,A.Dwivedi,M.Goswami,B.R.Singh,Effect of nitrogen containing plasma on interface properties of sputtered Zr O2 thin films on silicon,Mat.Sci.Semicon.Proc.19(2014)145-149.
[8]P.S.Das,A.Biswas,Influence of post deposition annealing on Y2O3-gated Ga As MOS capacitors and their reliability issues,Microelectron.Eng.88(2011)282-286.
[9]S.Chakraborty,M.K.Bera,C.K.Maiti,Effects of annealing on the electrical properties of Ti O2 films deposited on Ge-rich Si Ge substrates,J.Appl.Phys.100(2006)023706-1-023706-6.
[10]W.Zhang,Y.Cui,Z.G.Hu,W.L.Yu,J.Sun,N.Xu,Z.F.Ying,J.D.Wu,Structural,optical and electrical properties of high-k Zr O2 dielectrics on Si prepared by plasma assisted pulsed laser deposition,Thin Solid Films 520(2012)6361-6367.
[11]S.Chang,R.Doong,Interband Transitions in Sol-Gel-Derived Zr O2 Films under Different Calcination Conditions,Chem.Mater.19(2007)4804-4810.
[12]Y.H.Wu,M.L.Wu,J.R.Wu,L.L.Chen,Ge-stabilized tetragonal Zr O2 as gate dielectric for Ge metal-oxide-semiconductor capacitors fabricated on Si substrate,Appl.Phys.Lett.97(2010)043503-1-043503-3.
[13]M.Liu,L.D.Zhang,G.He,X.J.Wang,M.Fang,Effect of Ti incorporation on the interfacial and optical properties of Hf Ti O thin film,J.Appl.Phys.108(2010)024102-1-024102-4.
[14]C.Y.Wu,C.H.Hsieh,C.W.Lee,Y.H.Wu,Crystalline Zr Ti O4 gated p-metal-oxide-semiconductor field effect transistors with sub-nm equivalent oxide thickness featuring good electrical characteristics and reliability,Appl.Phys.Lett.106(2015)053508-1-053508-4.
[15]C.H.Hsu,S.Y.Lin,Characterization of Zr Ti O4 thin films prepared by sol-gel method,Mat.Sci.Semicon.Proc.16(2013)1262-1266.
[16]A.George,S.Solomon,J.K.Thomas,Characterizations and electrical properties of Zr Ti Ox ceramic,A.John,Mater.Res.Bull.47(2012)3141-3147.
[17]D.Q.Xiao,G.He,Z.Q.Sun,J.G.Lv,P.Jin,C.Y.Zheng,M.Liu,Microstructure,optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application,Ceram.Int.42(2016)759-766.
[18]C.Chaneliere,S.Four,J.L.Autran,R.A.B.Devine,N.P.Sandler,Properties of amorphous and crystalline Ta2O5 thin films deposited on Si from a Ta(OC2H5)5 precursor,J.Appl.Phys.83(1998)4823-4829.
[19]S.J.Jo,J.S.Ha,N.K.Park,D.K.Kang,B.H.Kim,5 nm thick lanthanum oxide thin films grow on Si(100)by atomic layer deposition:The effect of post-annealing on the electrical properties,Thin Solid Films 513(2006)253-257.
[20]M.J.Yoon,M.J.Seo,C.Jeong,J.H.Jang,K.S.Jeon,Synthesis of Liposome-Templated Ti Tania Nanodisks:Optical Properties and Photocatalytic Activities,Chem.Mater.17(2005)6069-6079.
[21]M.F.Al-Kuhaili,S.M.A.Durrani,Effect of annealing on pulsed laser deposited zirconium oxide thin film,J.Alloy.Comp.509(2011)9536-9541.
[22]L.P.Liang,Y.G.Sheng,Y.Xu,D.Wu,Y.H.Sun,Optical properties of sol-gel derived Zr O2-Ti O2 composite films,Thin Solid Films 515(2007)7765-7771.
[23]Z.C.Wang,U.Helmersson,P.O.Kall,Optical properties of anatase Ti O2 thin films prepared by aqueous sol-gel process at low temperature,Thin solid film,405(2002)50-54.
[24]M.Liu,Q.Fang,G.He,L.Li,L.Q.Zhu,G.H.Li,L.D.Zhang,Effect of post deposition annealing on the optical properties of Hf Ox Ny films,Appl.Phys.Lett.88(2006)192904-1-192904-3.
[25]R.Arora,B.W.Schmidt,D.M.Fleetwood,R.D.Schrimpf,K.F.Galloway,B.R.Rogers,Temperature stress response of germanium MOS capacitors with Hf O2/Hf Si ON gate dielectrics,ECS Trans.19(2009)803-814.
[26]P.S.Das,A.Biswas,Influence of post deposition annealing on Y2O3-hated Ga As MOS capacitors and their reliability issues,Microelectron.Eng.88(2011)282-286.
[27]D.Y.Choi,S.J.Oh,Y.J.Chang,T.W.Noh,R.Jung,J.C.Lee,Role of oxygen vacancy in Hf O2/Si O2/Si(100)interfaces,Appl.Phys.Lett.88(2006)193502-1-193502-3.
[28]T.Yu,C.G.Jin,Y.J.Dong,D.Cao,L.J.Zhuge,X.M.Wu,Temperature dependence of electrical properties for MOS capacitor with Hf O2/Si O2 gate dielectric stack,Mat.Sci.Semicon.Proc.16(2013)1321-1327.
[29]I.S.Jeon,J.Park,D.Eom,C.S.Hwang,H.J.Kim,C.J.Park,H.Y.Cho,J.H.Lee,N.I.Lee,H.K.Kang,Post-Annealing Effects on Fixed Charge and Slow/Fast Interface of Ti N/Al2O3/p-Si metal-Oxide-Semiconductor Capacitor,Jpn.J.Appl.Phys.42(2003)1222-1226.
[30]J.W.Zhang,G.He,M.Liu,H.S.Chen,Y.M.Liu,Z.Q.Sun,X.S.Chen,Composition dependent interfacial thermal stability,band alignment and electrical properties of Hf1-x Tix O2/Si gate stacks,Appl.Surf.Sci.346(2015)489-496.
[31]B.Chakrabarti,E.M.Vogel,Effect of Ti doping and annealing on multi-level forming-free resistive random access memories with atomic layer deposited Hf Ti Ox nanolaminate,Microelectron.Eng.109(2013)193-196.
[32]Y.H.Wu,M.L.Wu,J.R.Wu,Y.S.Lin,Electrical characteristics of Ge MOS device on Si substrate with thermal Si ON as gate dielectric,Microelectron.Eng.87(2010)2423-2428.
[33]Z.Xu,M.Houssa,S.D.Gendt,M.Heyns,Polarity effect on the temperature dependence of leakage current through Hf O2/Si O2 gate dielectric stacks,Appl.Phys.Lett.80(2002)1975-1977.
[34]F.C.Chiu,A Review on Conduction Mechanisms in Dielectric Films,Adv.Mater.Sci.Eng.2014(2014)578168-578185.
[35]N.Umezawa,K.Shiraishi,K.Torii,M.Boero,T.Chikyow,H.Watanabe,K.Yamabe,T.Ohno,K.Yamada,Y.Nara,Role of NItrogen Atoms in Reduction of Electron Charge Traps in Hf-Based High-k Dielectrics,IEEE Electr.Device.L.28(2007)363-365.
[36]J.Q.Zhang,Z.X.Li,H.Zhou,C.Ye,H.Wang,Electrical,optical and micro-structural properties of ultra-thin Hf Ti ON films,Appl.Surf.Sci.294(2014)58-65.