LSMO/P3HT/Co有机自旋阀中的反转磁阻现象
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- 英文论文题名：Inverse Magnetoresistance in LSMO/P3HT/Co Organic Spin Valves
- 论文作者：丁帅帅 ; 田园 ; 李旸 ; 米文博 ; 董焕丽 ; 胡文平 ; 朱道本
- 英文论文作者：Shuaishuai Ding ; Yuan Tian ; Yang Li ; Wenbo Mi ; Huanli Dong ; Wenping Hu ; Daoben Zhu ; Institut of Chemistry ; Chinese Academy of Sciences ; School of Science ; Tianjin University
- 年：2016
- 作者机构：中国科学院化学研究所;天津大学理学院;
- 论文关键词：有机自旋阀 ; 磁阻 ; 自旋界面 ; 有机电子学
- 会议召开时间：2016-07-01
- 会议录名称：中国化学会第30届学术年会摘要集-第二十一分会：π-共轭材料
- 语种：中文
- 分类号：O482.5
- 学会代码：ZGHY
- 会议名称：中国化学会第30届学术年会
- 会议地点：中国辽宁大连
- 主办单位：中国化学会
- 学会名称：中国化学会
- 页数：1
- 文件大小：157k
- 原文格式：O
- 会议级别：全国
摘要
本文主要研究了基于旋涂法制备的聚(3-己基噻吩)(P3HT)的有机自旋阀。我们首次在LSMO/A1O_x/P3HT/Co垂直器件结构中同时观测到了正负磁阻。整个研究主要集中于磁阻反转的解释。对两种类型的器件研究结果显示:具有线性Ⅳ曲线且存在Co渗透的器件呈现出0.24%的负磁阻,而具有非线性Ⅳ曲线的无渗透器件则表现为30.5%的正磁阻。通过对LSMO/AlO_x/Co和LSMO/Co结构进行磁阻测量,排除了绝缘层和两铁磁电极本身的干扰。而基于对Co厚度与矫顽力关系的研究,我们提出了一个Co渗透引起的自旋相关杂化界面态模型来解释这种磁阻反转现象。这些结果在密度泛函理论(DFT)的计算中得以证明,并为设计新型界面可控的有机自旋阀器件提供了依据。
In this work,both negative and positive magnetoresistance(MR) in solution-processed regioregular poly(3-hexylthiophene)(RR-P3HT) are first observed in organic spin valve(OSV) devices with vertical La_(2/3)Sr_(1/3)MnO_3(LSMO)/AlO_x/P3HT/Co configuration.The whole research is focused on the origin of MR inversion.Two types of devices are investigated in detail:One with Co penetration shows a negative MR of 0.24%,while the other well-defined device with a non-linear behavior has a positive MR of 30.5%.The MR measurements in LSMO/AlO_x/Co and LSMO/Co junctions are carried to exclude the interference of insulating layer and two FM electrodes themselves.By examining the Co thicknesses and their corresponding magnetic hysteresis loops,a spin-dependent hybrid-interface-state model by Co penetration is induced to explain the sign inversion of MR.These results proved by Density functional theory(DFT) calculations may shed light on the controllable interfacial properties in designing new OSV devices.
In this work,both negative and positive magnetoresistance(MR) in solution-processed regioregular poly(3-hexylthiophene)(RR-P3HT) are first observed in organic spin valve(OSV) devices with vertical La_(2/3)Sr_(1/3)MnO_3(LSMO)/AlO_x/P3HT/Co configuration.The whole research is focused on the origin of MR inversion.Two types of devices are investigated in detail:One with Co penetration shows a negative MR of 0.24%,while the other well-defined device with a non-linear behavior has a positive MR of 30.5%.The MR measurements in LSMO/AlO_x/Co and LSMO/Co junctions are carried to exclude the interference of insulating layer and two FM electrodes themselves.By examining the Co thicknesses and their corresponding magnetic hysteresis loops,a spin-dependent hybrid-interface-state model by Co penetration is induced to explain the sign inversion of MR.These results proved by Density functional theory(DFT) calculations may shed light on the controllable interfacial properties in designing new OSV devices.
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