摘要
Hybrid organic-inorganic perovskite materials offer a range of interesting characteristics that are suitable for optoelectronic devices, such as photovoltaics.Along with fast rise of the device performance, a current density-voltage(J-V) hysteresis originated from defects and their movement has attracted intensive attention, which renders challenges regarding stability and reliability of the novel materials.Here, we carefully probe the defects effects in the perovskite materials and across interfaces within the device, in which the bistable conductive states are achieved for the next generation nonvolatile memory.The memory device shows the operate voltage as low as 0.25 V, and a decent on/off ratio.More importantly, we correlate the defect density and hysteresis-index of different perovskite films to the corresponding memory device performance.The findings enrich the understanding of working mechanism of perovskite memory devices, which also benefit other organic-inorganic hybrid perovskite optoelectronics.
Hybrid organic-inorganic perovskite materials offer a range of interesting characteristics that are suitable for optoelectronic devices, such as photovoltaics.Along with fast rise of the device performance, a current density-voltage(J-V) hysteresis originated from defects and their movement has attracted intensive attention, which renders challenges regarding stability and reliability of the novel materials.Here, we carefully probe the defects effects in the perovskite materials and across interfaces within the device, in which the bistable conductive states are achieved for the next generation nonvolatile memory.The memory device shows the operate voltage as low as 0.25 V, and a decent on/off ratio.More importantly, we correlate the defect density and hysteresis-index of different perovskite films to the corresponding memory device performance.The findings enrich the understanding of working mechanism of perovskite memory devices, which also benefit other organic-inorganic hybrid perovskite optoelectronics.
引文
[1]Z.Xu,Z.Liu,Y.Huang,G.Zheng,Q.Chen and H.Zhou,J.Mater.Chem.C,2017,DOI:10 .1039/c7tc00266a