Defect emission and optical gain in SiC_xO_y:H films
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摘要
<正>In this work,luminescent SiC_xO_y:H films,which are fabricated at different CH_4 flow rates using very high-frequency plasma-enhanced chemical vapor deposition technique,exhibit strong PL with tuning from near-infrared to orange regions.The PL features an excitation wavelength independent recombination dynamic.The silicon dangling bond(DB)defects identified by electron paramagnetic resonance spectra are
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