细观光测技术及在微电子组件实验研究中应用
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摘要
本文抓住复合微电子组件界面断裂力学研究这一国际最新前沿课题,概述了断裂力学与微电子封装组件破坏特性相关的理论和实验研究,指出微电子封装组件破坏特性全面实验研究的迫切性和必要性,并提出了对实验测试技术的新要求。在此基础上,本文对细观测试技术的发展现状进行了综述,分析和论证了其在微电子封装组件破坏特性研究中的优势和不足,进而提出和发展了一些新的细观测试技术,并利用这些细观测试技术对微电子封装组件的破坏特性进行了全面的实验研究。
本文首次综合应用白光散斑法、数字散斑法、扫描电镜、形貌分析仪、图象处理仪等现代实验测试手段对复合微电子组件中薄膜的厚度,应力-应变曲线和基本力学性能进行了实验研究,成功地利用复合材料分离法得到了超薄膜的应力-应变曲线和基本力学性能。实验结果表明:本文所采用的实验测试手段和复合材料分离法对于微电子组件中常用的薄膜和超薄膜的应力-应变曲线和基本力学性能测量是有效的,且具有普遍意义。
本文以云纹干涉法为基础,把云纹干涉法和显微、倍增、载波、反转和非线性记录等技术相结合,发展并实现了一种U、V位移场同时测量的超高灵敏度的云纹条纹显微倍增方法,使得现有的光路放大倍数提高十倍,云纹干涉法的测量灵敏度提高一个量级以上,并把这一方法与高温测试技术相结合,提出了一种高温云纹显微倍增光路。以此首次对复合微电子组件热载下裂纹尖端奇异性进行了实验研究。实验发现:热载下组件裂纹尖端位移场具有指数(r~s)奇异性,奇异指数与绕裂尖的材料特性有关。
本文把虚栅的概念引入到传统的投影云纹法中,把它和全息法巧妙结合,提出并实现了一种宽量程测量复合微电子组件变形直至破坏的新技术一全息类投影云纹法。并以此对热载下微电子封装组件的脱粘、分层、剥
First of all,this research targets the international forward problems with regard to interface mechanics of compound microelectronic module, reviews basic theory of fracture mechanics ,summarizes theoretical and experimental study on failure properties of compound microelectronic packing module, points out its urgency and necessary for overall experimental studys of the failure properties in the microelectronic packing module, and proposes its new requirements of experimental technique.Then,this research summarizes the development of experimental techniques, analyses and proves its merits and demerits. Furthermore some new measurement techniques are proposed and developed, and failure properties of microelectronic packing module are studied for the first time by these techniques.In this research,the thickness, stress-strain curves and some mechanical properties of the thin film in compound microelectronic module are studied by modern experimental methods of white light speckle, digital speckle with use of the spec-troscopy, the surface measurement system and image-processing system. Meanwhile the separative method of composite materials is used successfully. The stress-strain curves and some mechanical properties of thin film and ultra-thin film are ob-tained.The results show that the experimental techniques and the separative method of composite materials in this research are potential to be measure the stress-strain curves and some mechanical properties of the thin film and ultra-thin film in microelectronic packing module.On the basic of moire interferometry, a marvelow combination of moire in-
terferometry ,micro technique, multiplication technique ,carrier technique, reversal technique and non-linear recording technique is proposed for enlarging and multi-pling moire interference fringes, where the U,V displacement fields are involved at the same time. By using this method, enlarging rate of the common optical system can be increased by ten times and the displaceinent measuring sensitivity of moire interferometry can be incerased over an order of magnitude. On the other hand, a high temperature micro-multiply moire interferometry system is developed by combining this method with high-temperature measuring technique. This method is applied to experimental study for the displacement fields around interlayer crack tip of compound microelectronic module under different thermal loadings. The results show that the displacement fields around crack-tip of module have exponential singularity under thermal loadings.For the first time, virtual gratings is drawn into the projection moire method, and combined with holographic interferometry, then a large measuring range new technique for measuring the whole deformative and damage process of compound microelectron module-holography quasi projection moire method—is proposed. By this method, the experimental study was done for studying the failure modes (deco-hesion, delamination, spalling, buckling, curving and crushing etc) of microelectronic packing module under thermal loadings. The experimental results show: when the mechanical strength of film/substrate bonded systems is weak, the interface will produce decohesion, delamination and spall;If strength of the film is far lesser than the substrate, the film will curve suddenly after delamination;If the film is ductile and the substrate is brittle, the film will buckle from the substrate;otherwise, the film will crush from the substrate.Finally, residual stress and its distribution in microelectronic packing module are measured by moire interferometry. Meanwhile, the singularity around interface crack-tip, influence of metal plasticity, interface fracture resistance and crack growing direction etc in the interface of sandwich specimen were studied by reflection holography-moire interferometry. The results show: the solution of the Dundurs'
elastic mismatch parameters for bimaterials based on linear-elastic fracture mechanics is suit for small scale yielding in multi-layer electronic packages. First the crack propagation is short along the initial interfacial crack, then the crack grows along 45° direction of the bonded systems and splits out the film ductile layer, finally the crack grows steady-state along the weak bonded interface.
本文首次综合应用白光散斑法、数字散斑法、扫描电镜、形貌分析仪、图象处理仪等现代实验测试手段对复合微电子组件中薄膜的厚度,应力-应变曲线和基本力学性能进行了实验研究,成功地利用复合材料分离法得到了超薄膜的应力-应变曲线和基本力学性能。实验结果表明:本文所采用的实验测试手段和复合材料分离法对于微电子组件中常用的薄膜和超薄膜的应力-应变曲线和基本力学性能测量是有效的,且具有普遍意义。
本文以云纹干涉法为基础,把云纹干涉法和显微、倍增、载波、反转和非线性记录等技术相结合,发展并实现了一种U、V位移场同时测量的超高灵敏度的云纹条纹显微倍增方法,使得现有的光路放大倍数提高十倍,云纹干涉法的测量灵敏度提高一个量级以上,并把这一方法与高温测试技术相结合,提出了一种高温云纹显微倍增光路。以此首次对复合微电子组件热载下裂纹尖端奇异性进行了实验研究。实验发现:热载下组件裂纹尖端位移场具有指数(r~s)奇异性,奇异指数与绕裂尖的材料特性有关。
本文把虚栅的概念引入到传统的投影云纹法中,把它和全息法巧妙结合,提出并实现了一种宽量程测量复合微电子组件变形直至破坏的新技术一全息类投影云纹法。并以此对热载下微电子封装组件的脱粘、分层、剥
First of all,this research targets the international forward problems with regard to interface mechanics of compound microelectronic module, reviews basic theory of fracture mechanics ,summarizes theoretical and experimental study on failure properties of compound microelectronic packing module, points out its urgency and necessary for overall experimental studys of the failure properties in the microelectronic packing module, and proposes its new requirements of experimental technique.Then,this research summarizes the development of experimental techniques, analyses and proves its merits and demerits. Furthermore some new measurement techniques are proposed and developed, and failure properties of microelectronic packing module are studied for the first time by these techniques.In this research,the thickness, stress-strain curves and some mechanical properties of the thin film in compound microelectronic module are studied by modern experimental methods of white light speckle, digital speckle with use of the spec-troscopy, the surface measurement system and image-processing system. Meanwhile the separative method of composite materials is used successfully. The stress-strain curves and some mechanical properties of thin film and ultra-thin film are ob-tained.The results show that the experimental techniques and the separative method of composite materials in this research are potential to be measure the stress-strain curves and some mechanical properties of the thin film and ultra-thin film in microelectronic packing module.On the basic of moire interferometry, a marvelow combination of moire in-
terferometry ,micro technique, multiplication technique ,carrier technique, reversal technique and non-linear recording technique is proposed for enlarging and multi-pling moire interference fringes, where the U,V displacement fields are involved at the same time. By using this method, enlarging rate of the common optical system can be increased by ten times and the displaceinent measuring sensitivity of moire interferometry can be incerased over an order of magnitude. On the other hand, a high temperature micro-multiply moire interferometry system is developed by combining this method with high-temperature measuring technique. This method is applied to experimental study for the displacement fields around interlayer crack tip of compound microelectronic module under different thermal loadings. The results show that the displacement fields around crack-tip of module have exponential singularity under thermal loadings.For the first time, virtual gratings is drawn into the projection moire method, and combined with holographic interferometry, then a large measuring range new technique for measuring the whole deformative and damage process of compound microelectron module-holography quasi projection moire method—is proposed. By this method, the experimental study was done for studying the failure modes (deco-hesion, delamination, spalling, buckling, curving and crushing etc) of microelectronic packing module under thermal loadings. The experimental results show: when the mechanical strength of film/substrate bonded systems is weak, the interface will produce decohesion, delamination and spall;If strength of the film is far lesser than the substrate, the film will curve suddenly after delamination;If the film is ductile and the substrate is brittle, the film will buckle from the substrate;otherwise, the film will crush from the substrate.Finally, residual stress and its distribution in microelectronic packing module are measured by moire interferometry. Meanwhile, the singularity around interface crack-tip, influence of metal plasticity, interface fracture resistance and crack growing direction etc in the interface of sandwich specimen were studied by reflection holography-moire interferometry. The results show: the solution of the Dundurs'
elastic mismatch parameters for bimaterials based on linear-elastic fracture mechanics is suit for small scale yielding in multi-layer electronic packages. First the crack propagation is short along the initial interfacial crack, then the crack grows along 45° direction of the bonded systems and splits out the film ductile layer, finally the crack grows steady-state along the weak bonded interface.
引文
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