溶胶—凝胶法制备GaN基LED缓冲层氧化锌薄膜的研究
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摘要
氧化锌(ZnO)是一种典型的Ⅱ-VI族宽带隙化合物半导体材料,具有六方纤锌矿结构,它的禁带宽度为3.37eV,激子束缚能为60meV。氧化锌晶体在c轴垂直面上具有对称的电学性质和弹性,而在c轴方向择优取向的多晶薄膜具有单晶体似的压电性和光电性质。此外,ZnO在晶格常数和热膨胀系数上与GaN最为接近, ZnO在a轴向与GaN的失配度是1.9% ,在c轴向与GaN的失配度仅为0.4%,因此,高质量的ZnO薄膜能作为GaN薄膜的缓冲层。这些突出的物理特性和平整均匀的表面形貌,使得ZnO薄膜可以广泛应用于各领域当中。
本文以醋酸锌(Zn(CH3COO)2·2H2O)为前驱体,乙二醇甲醚(CH3OCH2CH2OH)为溶剂,乙醇胺(HOCH2CH2NH2)作为稳定剂,采用溶胶—凝胶法在蓝宝石基片上制备了ZnO薄膜。主要研究了溶胶浓度(0.5mol/l、0.75mol/l、1mol/l)、退火温度(500-1000℃)以及薄膜厚度(1层膜、2层膜、3层膜、5层膜、7层膜、8层膜、10层膜)对薄膜晶体结构、结晶状况、表面形貌的影响,利用X射线衍射(XRD)、扫描电子显微镜(SEM)。原子力显微镜(AFM)、光致发光光谱仪(PL)等对制备的ZnO薄膜进行了表征和性能研究。
研究表明:采用溶胶-凝胶法所制备的ZnO薄膜为纤锌矿型结构,溶胶浓度为0.75mol/l时薄膜C轴取向性好,晶体颗粒均匀致密,空位及缺陷浓度不高。相同条件下(溶胶浓度0.75mol/l、提拉速度18mm/min、退火条件:900℃/2h),晶粒尺寸随着薄膜层数的增多慢慢变大,(002)衍射峰强度在5层膜之前随着层数的增多而增强,但在5层膜以后有所削弱,使得氧化锌薄膜的择优取向性先变大再变小,说明5层膜的薄膜厚度最佳。薄膜(002)衍射峰的强度及晶粒尺寸随退火温度的升高而增大,(002)面的择优取向性也随之变强,900℃时薄膜结构综合性能最好,温度太高薄膜结构孔洞较多,致密性变差且容易与衬底发生反应污染薄膜。
ZnO is a wide band gap semiconductor material inⅡ-Ⅵfamily, which with Wurtzite crystal structure, The band gap and the exciton bound energy of ZnO are 3.37eV and 60meV, Respectively, ZnO crystal has symmetrically electrical properties and flexibility on the vertical plane of c-axis,while the polycrystalline film with preferential c-axis orientation has the same piezoelectric and photoelectrical properties as single-crystal film. Otherwise, ZnO is very close to GaN in the lattice constant and thermal expansion coefficient, the mismatch of ZnO between GaN in a-axial is about 1.9% and in c-axial is only about 0.4%, Therefore, ZnO thin film with high-quality can play the role of the buffer layer of GaN thin films.Those outstanding physical property and even appearance of surface make ZnO film be widely applied to many industries.
A series of ZnO films of different conditions have been deposited on sapphire substrates using sol–gel technique: different concentration of sol (0.5mol/l,0.75mol/l,1mol/l); different thickness of thin film (1layer, 2 layers, 3layers, 5layers, 7layers, 8layers, 10layers); different annealing temperature (500-1000℃). The effects of those conditions on the structural and optical properties have been investigated use X-Ray Diffraction(XRD)、Scanning Electron Microscopy(SEM)、Atomic Force Microscope(AFM) and Photoluminescence spectra(PL).
The results indicate that the ZnO thin film has good c-axis orientation、uniform grain size、compact structure and small concentration of vacancies and defects when the concentration of sol was 0.75mol/l. Under the same conditions(CZn+:0.75mol/l, pulling rate: 18mm/min, annealing temperature: 900℃), the grain size of thin film increased with the increasing of film layers, ZnO thin film has the best (002) -oriented when the thickness of film was 5 layers. The intensity of (002) diffraction peak and grain size increased with the increasing of annealing temperature, (002)-oriented of ZnO thin film also become better with the increasing of annealing temperature, the ZnO thin film has the best structure properties when the annealing temperature was about 900℃. In addition, high-temperature annealed sapphire substrates could help improving the structure properties of ZnO thin film. Finally, we can make the conclusion that ZnO thin film deposited on annealed sapphire substrates by sol-gel method which has the best structural and optical properties when the concentration of sol was 0.75mol/l、the thickness was 5 layers、the annealing temperature was 900℃
本文以醋酸锌(Zn(CH3COO)2·2H2O)为前驱体,乙二醇甲醚(CH3OCH2CH2OH)为溶剂,乙醇胺(HOCH2CH2NH2)作为稳定剂,采用溶胶—凝胶法在蓝宝石基片上制备了ZnO薄膜。主要研究了溶胶浓度(0.5mol/l、0.75mol/l、1mol/l)、退火温度(500-1000℃)以及薄膜厚度(1层膜、2层膜、3层膜、5层膜、7层膜、8层膜、10层膜)对薄膜晶体结构、结晶状况、表面形貌的影响,利用X射线衍射(XRD)、扫描电子显微镜(SEM)。原子力显微镜(AFM)、光致发光光谱仪(PL)等对制备的ZnO薄膜进行了表征和性能研究。
研究表明:采用溶胶-凝胶法所制备的ZnO薄膜为纤锌矿型结构,溶胶浓度为0.75mol/l时薄膜C轴取向性好,晶体颗粒均匀致密,空位及缺陷浓度不高。相同条件下(溶胶浓度0.75mol/l、提拉速度18mm/min、退火条件:900℃/2h),晶粒尺寸随着薄膜层数的增多慢慢变大,(002)衍射峰强度在5层膜之前随着层数的增多而增强,但在5层膜以后有所削弱,使得氧化锌薄膜的择优取向性先变大再变小,说明5层膜的薄膜厚度最佳。薄膜(002)衍射峰的强度及晶粒尺寸随退火温度的升高而增大,(002)面的择优取向性也随之变强,900℃时薄膜结构综合性能最好,温度太高薄膜结构孔洞较多,致密性变差且容易与衬底发生反应污染薄膜。
ZnO is a wide band gap semiconductor material inⅡ-Ⅵfamily, which with Wurtzite crystal structure, The band gap and the exciton bound energy of ZnO are 3.37eV and 60meV, Respectively, ZnO crystal has symmetrically electrical properties and flexibility on the vertical plane of c-axis,while the polycrystalline film with preferential c-axis orientation has the same piezoelectric and photoelectrical properties as single-crystal film. Otherwise, ZnO is very close to GaN in the lattice constant and thermal expansion coefficient, the mismatch of ZnO between GaN in a-axial is about 1.9% and in c-axial is only about 0.4%, Therefore, ZnO thin film with high-quality can play the role of the buffer layer of GaN thin films.Those outstanding physical property and even appearance of surface make ZnO film be widely applied to many industries.
A series of ZnO films of different conditions have been deposited on sapphire substrates using sol–gel technique: different concentration of sol (0.5mol/l,0.75mol/l,1mol/l); different thickness of thin film (1layer, 2 layers, 3layers, 5layers, 7layers, 8layers, 10layers); different annealing temperature (500-1000℃). The effects of those conditions on the structural and optical properties have been investigated use X-Ray Diffraction(XRD)、Scanning Electron Microscopy(SEM)、Atomic Force Microscope(AFM) and Photoluminescence spectra(PL).
The results indicate that the ZnO thin film has good c-axis orientation、uniform grain size、compact structure and small concentration of vacancies and defects when the concentration of sol was 0.75mol/l. Under the same conditions(CZn+:0.75mol/l, pulling rate: 18mm/min, annealing temperature: 900℃), the grain size of thin film increased with the increasing of film layers, ZnO thin film has the best (002) -oriented when the thickness of film was 5 layers. The intensity of (002) diffraction peak and grain size increased with the increasing of annealing temperature, (002)-oriented of ZnO thin film also become better with the increasing of annealing temperature, the ZnO thin film has the best structure properties when the annealing temperature was about 900℃. In addition, high-temperature annealed sapphire substrates could help improving the structure properties of ZnO thin film. Finally, we can make the conclusion that ZnO thin film deposited on annealed sapphire substrates by sol-gel method which has the best structural and optical properties when the concentration of sol was 0.75mol/l、the thickness was 5 layers、the annealing temperature was 900℃
引文
1 Youn C J, Jeong T S, Han M S, et al. Influence of various activation temperatures on the optical degradation of Mg doped InGaNGaN MQW blue LEDs . J Cryst Growth. 2003 , 250 : 331
2 Nakamura S. The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes. Science. 1998, 281 : 956
3 Popovici G, Xu G, Botchkarev A, etal. Research progress in GaN thin films. J Appl Phys. 1997, 82 : 4020
4范隆,郝跃,冯倩,段猛.SiC/AlN上外延GaN薄膜的黄带发光与晶体缺陷的关系.光子学报. 2003 Vol . 32 No. 8
5秦福文,顾彪,徐茵,杨大智.GaN缓冲层上低温生长Al N单晶薄膜.半导体学报.2003 Vol. 29 No. 3
6林郭强,曾一平,段瑞飞,魏同波.HVPE气相外延法在c面蓝宝石上选区外延生长Ga N及其表征.半导体学报.2008 Vol. 24 No. 1
7卢佃清,修向前.氢化物外延生长系统的设计和制作.物理实验.2006Vol.26 No.3
8 Wei Tongbo, Ma Ping, Duan Ruifei. Structural and Optical Performance of GaN Thick Film Grown by HVPE. CHINESE JOURNAL OF SEMICONDUCTORS. 2007 Vol . 28 No. 1
9卢佃清,侯玉娟,陆金男.HVPE外延GaN膜中黄带的光致发光激发谱研究.物理实验. 2004 Vol.24 No.6
10陈洪建,张维连,陈贵峰.氢化物气相外延氮化镓衬底的制备研究.稀有金属. 2007 Vol.31 No.4
11孟兆祥,于广辉,叶好华.HVPE水平反应器中气流动力学模拟与GaN生长.功能材料与器件学报.2003Vol.9 No.4
12何萌,刘国珍,仇杰.用激光分子束外延在Si衬底上外延生长高质量的TiN薄膜.物理学报第2期
13 Lorenz K, Vianden R, Birkhahn R, et al. RBS/Channeling study of Er doped GaN films grown by MBE on Si(111. substrates. Nucl Instrum Meth. 2000, B161/ 163 : 946
14 Moustakas T D, Iliopoulos E, Sampath A V, et al. Growth and deviceapplications of III-nitrides by MBE. J Cryst Growth. 2001, 227~228 : 13
15 Strite S, Morkoc H.“GaN, AlN, and InN:A review,”J.Vac Sci Technol. 1992,B10 :1237
16 Detchprohm T, Amano H, Hiramatsu K etal. The growth of thick GaN film on sapphire substrate by using ZnO buffer layer. J. Crystal Growth. 1993,128 :384～390
17黄生荣,陈朝. GaN材料湿法刻蚀的研究与进展.微纳电子技术.2005年第6期
18 G. Nataf*, B. Beaumont eatl. Lateral overgrowth of high quality GaN layers on GaN/Al2O3 patterned substrates by halide vapour-phase epitaxy. J. Crystal Growth. 192 (1998) 73~78
19 Seong-JinKim. Sapphire-etched vertical-electrode nitride-based semiconductor light-emitting diode (SEVENS LED) fabricated by the wet etching technique. phys. stat. sol. (a) 203, No. 5, 997~1004 (2006)
20赵海丽.溶胶凝胶法制备ZnO薄膜及其性能的研究.西安建筑科技大学硕士论文. 2007年:13~16
21 Zhu G F, Zhi Z Y etal. Electrical and optical properties of Al-N co-doped P-type zinc oxide films. J. Crystal Growth. 2004, 268:163~168
22 Minami T, Shirai T, Nakatani T etal. Electroluminescent devices with Ga2O3: Mn thin-film emitting layer prepared by sol-gel process. Jpn J Appl Phys. 2000,39:524~526
23 Bagnall D M, Chen Y F, Zhu Z etal. High temperature Excitonic stimulated emission from ZnO epitaxial layer. Appl Phys Lett. 1998,73(8):1038~1040
24 SutichaiChaisitsak*, Takeshisugiyama, AkiraYamada, MakotoKonagail. Cu(InGa)Se2 Thin-film Solar Cells with High Resistivity ZnO Buffer Layers Deposited by Atomic Deposition.Jpn J Appl phys. 1999, Vol.38:4989~4992
25刘彦松,王连卫,黄继颇等.利用ZnO缓冲层制备AIN薄膜.压电与声光. 2000,22(5):332~325
26 Johnson M A L,Fujita S, Rowland W Hetal. MBE growth and Properties of ZnO on Sapphire and SiC substrates. J Electron Mater, 1996, 25(5):88~862
27毛祥军,杨志坚,叶志镇等.用MOCVD在ZnO/A1203:衬底上生长GaN及其特性.半导体学报. 1999, 20(s):639~642
28李剑光,叶志镇,汪雷等.用于制备GaN的硅基ZnO过渡层的高温热处理研究.半导体学报. 1999, 20(10):562~566
29 DetchProhm T,Amano H,Hiramatsu K etal.Growth of thick GaN film on sapphire Substrate by using ZnO buffer layer. J.Cryst Growth. 1993, 128(1- 4):384~390
30 Jimnez Gonzlez A E, Soto Urueta jose A, Surez-Parra R. optical and electrical Characteristics of aluminum- doped ZnO thin films prepared by sol-gel technique.J Cryst Growth. 1998,192(3/4):430~438
31李海凤.ZnO的用途及其薄膜的制备方法.天津职业大学学报. 2006,15(3):39~41
32 Uchida K, Watanabe A , Yano F , et al . Nitridation process of sapphire substrate surface and its effect on the growth of GaN. J .Appl . Phys. 1996 , 34 : 79
33 Kim H M, Kang T W. Comparison of HVPE GaN films and substrates grown on sapphire and on MOCVD GaN epi-layer. Materials Letters. 2000, 46 : 286
34 Tavernier P R, Etzkorn E V, Wang Y. Two step growth of high quality GaN by hydride vaporphase epitaxy. Applied PhysicsLetters. 2000, 77 : 12
35 Parmod Sagar, Manoj Kumar, R.M. Mehra. Epitaxial growth of zinc oxide thin films on epi-GaN/sapphire (0001) by sol–gel technique.Thin Solid Films. 515 3330~3334
36 Hideki Hirayama, Tohru Yatabe, Norimichi Noguch.226~273 nm AlGaN deep-ultraviolet light-emitting diodes fabricated on multilayer AlN buffers on sapphire.p hys. stat. sol. (c) 5, No. 9, 2969~2971
37 Kensaku Motoki, Takuji Okahisa. Growth and characterization offreestanding GaN substrates. J . Cryst Growth. 2002 , 212 : 237
38宋永梁,季振国,王泉香等.溶胶-凝胶提拉法制备ZnO薄膜及其性能研究.材料科学与工程学报. 2004,22(1)
39李巍,葛志平,刘志锋等.溶胶凝胶法制备ZnO多孔薄膜.硅酸盐学报. 2005,33(6)
40朱明伟,黄辉,宫骏等.稳定剂对溶胶凝胶制备的氧化锌薄膜致密度的影响.中国表面工程. 2007,20(6)
41 Y. Natsume, H. Sakata. Zinc oxide films prepared by sol-gel spin-coating.Thin Solid Films. 372 (2000):30~36
42 Parmod Sagara, P.K. Shishodiaa,1, R.M. Mehra etal. Photoluminescence and absorption in sol–gel-derived ZnO films. J. Luminescence 126 (2007) :800~806
43 S. Ben Yahia, L. Znaidi, A. Kanaev, J.P. Petitet. Raman study of oriented ZnO thin films deposited by sol–gel method. Spectrochimica Acta Part A. 71(2008): 1234~1238
44 M.P. Bole, D.S. Patil. Effect of annealing temperature on the optical constants of zinc oxide films. J. Physics and Chemistry of Solids. 70 (2009): 466~471
45 Davood Raoufi, Taha Raoufi. The effect of heat treatment on the physical properties of sol–gel derived ZnO thin films. Applied Surface Science. 255 (2009): 5812~5817
46 P. Nunes, E. Fortunato, R. Martins. Influence of the post-treatment on the properties of ZnO thin films. Thin Solid Films 383 (2001). 277~280.
47李剑光,汪雷,叶志镇等. ZnO薄膜的晶体性能的分析.真空科学与技术. 1999,19(5)
48翟继卫,陈小刚,张良莹,姚熹.高度取向ZnO薄膜的介电和光波导特性研究.压电与声光. 1999,21(4)
49 Hyoun Woo Kim*, Nam Ho Kim. Preparation of GaN films on ZnO buffer layers by rf magnetron sputtering. Applied Surface Science. 236 (2004): 192~197
50 Ruchika Sharma, Kiran Sehrawat, Akihiro Wakahara, R.M. Mehra. Epitaxial growth of Sc-doped ZnO films on Si by sol–gel route. Applied Surface Science. 255 (2009): 5781~5788
51 Sang Hoon Yoon, Dan Liu, Dongna Shen, Minseo Park, Dong-Joo Kim. Effect of chelating agents on the preferred orientation of ZnO films by sol-gel process. J. Mater Sci. (2008) 43:6177~6181
52 J. Petersen, C. Brimont, M. Gallart, O. Crégut, G. Schmerber etal. Structural and photoluminescence properties of ZnO thin films prepared by sol-gel process. J. APPLIED PHYSICS. 104, 113~539 (2008)
53 P. T. Hsieh, Y. C. Chen, M. S. Lee, K. S. Kao, M. C. Kao, M. P. Houng. The effects of oxygen concentration on ultraviolet luminescence of ZnO films by sol–gel technology and annealing. J. Sol-Gel Sci Technol. 2008,47:1~6
54 Yoshihiro KOKUBUN, Hiroko KIMURA, Shinji NAKAGOMI. Preparation of ZnO Thin Films on Sapphire Substrates by Sol-Gel Method. Jpn. J. Appl. Phys. Vol. 42 (2003) pp. L 904~L 906
55 R. ghosh, B. mallik, D. basak. Dependence of photoconductivityon the crystallite orientations and porosity of polycrystalline ZnO films. Appl. Phys. A 81, 1281~1284 (2005)
56 S.W. Xue, X.T. Zua, W.G. Zheng, M.Y. Chen, X. Xiang. Effects of annealing and dopant concentration on the optical characteristics of ZnO:Al thin films by sol–gel technique. Physica B. 382 (2006): 201~204
57 G. Srinivasan, N. Gopalakrishnan, Y.S. Yu, R. Kesavamoorthy. Influence of post-deposition annealing on the structural and optical properties of ZnO thin films prepared by sol–gel and spin-coating method. Superlattices and Microstructures. 43 (2008): 112~119
58 S. Mridha, D. Basak. Effect of thickness on the structural, electrical and optical properties of ZnO films. Materials Research Bulletin. 42 (2007) 875~882
59 B. Wessler, F.F. Lange, W. Mader. Textured ZnO thin films on (0001) sapphire produced by chemical solution deposition. J. Mater. Res.Vol. 17, No. 7(2002)
60 Hashimoto M,ZhouY,Kanamura M, Asahi H. GaN-based magnetic semiconductors for nanospintronics. Solid State Commun. 2002, 122, 37
61张倍榕.利用溶胶凝胶法制作用于氮化镓发光二极管之氧化锌缓冲层.国立台北科技大学硕士学位论文. 2007:6~9
62 C.-W. Kwon, A. Poquet, S. Mornet etal. Electronegativity and chemical hardness: two helpful concepts for understanding oxide nanochemistry. Materials Letters. 51(2001). 402~413
63刘敏,掺杂纳米Ti02半导体催化剂的制备与光催化性能研究,合肥工业大学硕士学位论文, 2004
64陈雯雯.溶胶一凝胶法制备A1掺杂ZnO(AZO)薄膜及其性能研究.合肥工业大学硕士学位论文. 2007
65陈宗淇,王光信,徐桂英.胶体与界面化学.高等教育出版社. 2001,104~111
66 Yoshihiro KOKUBUN, Hiroko KIMURA, Shinji NAKAGOM. Preparation of ZnO Thin Films on Sapphire Substrates by Sol-Gel Method. Jpn. J. Appl. Phys. Vol. 42 (2003) pp. L 904~L 906
67 M. Yoshimoto, T. Maeda, T. Ohnishi, H. Koinuma, O etal. Room-temperature growth of AlN/TiN epitaxial multi-layer by laser molecular beam epitaxyAppl. Phys. Lett. 67 (1995) 2615
68 S.F.Chichibu, T.Yoshida, T.Onuma, H.Nakanishi.Helicon-wave-excited -plasma sputtering epitaxy of ZnO on sapphire (0001) substrates J. Appl.Phys. 91 (2002) 874
69 S. Mridha, D. Basak. Effect of thickness on the structural, electrical and optical properties of ZnO films. Materials Research Bulletin. 42 (2007) 875~882
2 Nakamura S. The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes. Science. 1998, 281 : 956
3 Popovici G, Xu G, Botchkarev A, etal. Research progress in GaN thin films. J Appl Phys. 1997, 82 : 4020
4范隆,郝跃,冯倩,段猛.SiC/AlN上外延GaN薄膜的黄带发光与晶体缺陷的关系.光子学报. 2003 Vol . 32 No. 8
5秦福文,顾彪,徐茵,杨大智.GaN缓冲层上低温生长Al N单晶薄膜.半导体学报.2003 Vol. 29 No. 3
6林郭强,曾一平,段瑞飞,魏同波.HVPE气相外延法在c面蓝宝石上选区外延生长Ga N及其表征.半导体学报.2008 Vol. 24 No. 1
7卢佃清,修向前.氢化物外延生长系统的设计和制作.物理实验.2006Vol.26 No.3
8 Wei Tongbo, Ma Ping, Duan Ruifei. Structural and Optical Performance of GaN Thick Film Grown by HVPE. CHINESE JOURNAL OF SEMICONDUCTORS. 2007 Vol . 28 No. 1
9卢佃清,侯玉娟,陆金男.HVPE外延GaN膜中黄带的光致发光激发谱研究.物理实验. 2004 Vol.24 No.6
10陈洪建,张维连,陈贵峰.氢化物气相外延氮化镓衬底的制备研究.稀有金属. 2007 Vol.31 No.4
11孟兆祥,于广辉,叶好华.HVPE水平反应器中气流动力学模拟与GaN生长.功能材料与器件学报.2003Vol.9 No.4
12何萌,刘国珍,仇杰.用激光分子束外延在Si衬底上外延生长高质量的TiN薄膜.物理学报第2期
13 Lorenz K, Vianden R, Birkhahn R, et al. RBS/Channeling study of Er doped GaN films grown by MBE on Si(111. substrates. Nucl Instrum Meth. 2000, B161/ 163 : 946
14 Moustakas T D, Iliopoulos E, Sampath A V, et al. Growth and deviceapplications of III-nitrides by MBE. J Cryst Growth. 2001, 227~228 : 13
15 Strite S, Morkoc H.“GaN, AlN, and InN:A review,”J.Vac Sci Technol. 1992,B10 :1237
16 Detchprohm T, Amano H, Hiramatsu K etal. The growth of thick GaN film on sapphire substrate by using ZnO buffer layer. J. Crystal Growth. 1993,128 :384～390
17黄生荣,陈朝. GaN材料湿法刻蚀的研究与进展.微纳电子技术.2005年第6期
18 G. Nataf*, B. Beaumont eatl. Lateral overgrowth of high quality GaN layers on GaN/Al2O3 patterned substrates by halide vapour-phase epitaxy. J. Crystal Growth. 192 (1998) 73~78
19 Seong-JinKim. Sapphire-etched vertical-electrode nitride-based semiconductor light-emitting diode (SEVENS LED) fabricated by the wet etching technique. phys. stat. sol. (a) 203, No. 5, 997~1004 (2006)
20赵海丽.溶胶凝胶法制备ZnO薄膜及其性能的研究.西安建筑科技大学硕士论文. 2007年:13~16
21 Zhu G F, Zhi Z Y etal. Electrical and optical properties of Al-N co-doped P-type zinc oxide films. J. Crystal Growth. 2004, 268:163~168
22 Minami T, Shirai T, Nakatani T etal. Electroluminescent devices with Ga2O3: Mn thin-film emitting layer prepared by sol-gel process. Jpn J Appl Phys. 2000,39:524~526
23 Bagnall D M, Chen Y F, Zhu Z etal. High temperature Excitonic stimulated emission from ZnO epitaxial layer. Appl Phys Lett. 1998,73(8):1038~1040
24 SutichaiChaisitsak*, Takeshisugiyama, AkiraYamada, MakotoKonagail. Cu(InGa)Se2 Thin-film Solar Cells with High Resistivity ZnO Buffer Layers Deposited by Atomic Deposition.Jpn J Appl phys. 1999, Vol.38:4989~4992
25刘彦松,王连卫,黄继颇等.利用ZnO缓冲层制备AIN薄膜.压电与声光. 2000,22(5):332~325
26 Johnson M A L,Fujita S, Rowland W Hetal. MBE growth and Properties of ZnO on Sapphire and SiC substrates. J Electron Mater, 1996, 25(5):88~862
27毛祥军,杨志坚,叶志镇等.用MOCVD在ZnO/A1203:衬底上生长GaN及其特性.半导体学报. 1999, 20(s):639~642
28李剑光,叶志镇,汪雷等.用于制备GaN的硅基ZnO过渡层的高温热处理研究.半导体学报. 1999, 20(10):562~566
29 DetchProhm T,Amano H,Hiramatsu K etal.Growth of thick GaN film on sapphire Substrate by using ZnO buffer layer. J.Cryst Growth. 1993, 128(1- 4):384~390
30 Jimnez Gonzlez A E, Soto Urueta jose A, Surez-Parra R. optical and electrical Characteristics of aluminum- doped ZnO thin films prepared by sol-gel technique.J Cryst Growth. 1998,192(3/4):430~438
31李海凤.ZnO的用途及其薄膜的制备方法.天津职业大学学报. 2006,15(3):39~41
32 Uchida K, Watanabe A , Yano F , et al . Nitridation process of sapphire substrate surface and its effect on the growth of GaN. J .Appl . Phys. 1996 , 34 : 79
33 Kim H M, Kang T W. Comparison of HVPE GaN films and substrates grown on sapphire and on MOCVD GaN epi-layer. Materials Letters. 2000, 46 : 286
34 Tavernier P R, Etzkorn E V, Wang Y. Two step growth of high quality GaN by hydride vaporphase epitaxy. Applied PhysicsLetters. 2000, 77 : 12
35 Parmod Sagar, Manoj Kumar, R.M. Mehra. Epitaxial growth of zinc oxide thin films on epi-GaN/sapphire (0001) by sol–gel technique.Thin Solid Films. 515 3330~3334
36 Hideki Hirayama, Tohru Yatabe, Norimichi Noguch.226~273 nm AlGaN deep-ultraviolet light-emitting diodes fabricated on multilayer AlN buffers on sapphire.p hys. stat. sol. (c) 5, No. 9, 2969~2971
37 Kensaku Motoki, Takuji Okahisa. Growth and characterization offreestanding GaN substrates. J . Cryst Growth. 2002 , 212 : 237
38宋永梁,季振国,王泉香等.溶胶-凝胶提拉法制备ZnO薄膜及其性能研究.材料科学与工程学报. 2004,22(1)
39李巍,葛志平,刘志锋等.溶胶凝胶法制备ZnO多孔薄膜.硅酸盐学报. 2005,33(6)
40朱明伟,黄辉,宫骏等.稳定剂对溶胶凝胶制备的氧化锌薄膜致密度的影响.中国表面工程. 2007,20(6)
41 Y. Natsume, H. Sakata. Zinc oxide films prepared by sol-gel spin-coating.Thin Solid Films. 372 (2000):30~36
42 Parmod Sagara, P.K. Shishodiaa,1, R.M. Mehra etal. Photoluminescence and absorption in sol–gel-derived ZnO films. J. Luminescence 126 (2007) :800~806
43 S. Ben Yahia, L. Znaidi, A. Kanaev, J.P. Petitet. Raman study of oriented ZnO thin films deposited by sol–gel method. Spectrochimica Acta Part A. 71(2008): 1234~1238
44 M.P. Bole, D.S. Patil. Effect of annealing temperature on the optical constants of zinc oxide films. J. Physics and Chemistry of Solids. 70 (2009): 466~471
45 Davood Raoufi, Taha Raoufi. The effect of heat treatment on the physical properties of sol–gel derived ZnO thin films. Applied Surface Science. 255 (2009): 5812~5817
46 P. Nunes, E. Fortunato, R. Martins. Influence of the post-treatment on the properties of ZnO thin films. Thin Solid Films 383 (2001). 277~280.
47李剑光,汪雷,叶志镇等. ZnO薄膜的晶体性能的分析.真空科学与技术. 1999,19(5)
48翟继卫,陈小刚,张良莹,姚熹.高度取向ZnO薄膜的介电和光波导特性研究.压电与声光. 1999,21(4)
49 Hyoun Woo Kim*, Nam Ho Kim. Preparation of GaN films on ZnO buffer layers by rf magnetron sputtering. Applied Surface Science. 236 (2004): 192~197
50 Ruchika Sharma, Kiran Sehrawat, Akihiro Wakahara, R.M. Mehra. Epitaxial growth of Sc-doped ZnO films on Si by sol–gel route. Applied Surface Science. 255 (2009): 5781~5788
51 Sang Hoon Yoon, Dan Liu, Dongna Shen, Minseo Park, Dong-Joo Kim. Effect of chelating agents on the preferred orientation of ZnO films by sol-gel process. J. Mater Sci. (2008) 43:6177~6181
52 J. Petersen, C. Brimont, M. Gallart, O. Crégut, G. Schmerber etal. Structural and photoluminescence properties of ZnO thin films prepared by sol-gel process. J. APPLIED PHYSICS. 104, 113~539 (2008)
53 P. T. Hsieh, Y. C. Chen, M. S. Lee, K. S. Kao, M. C. Kao, M. P. Houng. The effects of oxygen concentration on ultraviolet luminescence of ZnO films by sol–gel technology and annealing. J. Sol-Gel Sci Technol. 2008,47:1~6
54 Yoshihiro KOKUBUN, Hiroko KIMURA, Shinji NAKAGOMI. Preparation of ZnO Thin Films on Sapphire Substrates by Sol-Gel Method. Jpn. J. Appl. Phys. Vol. 42 (2003) pp. L 904~L 906
55 R. ghosh, B. mallik, D. basak. Dependence of photoconductivityon the crystallite orientations and porosity of polycrystalline ZnO films. Appl. Phys. A 81, 1281~1284 (2005)
56 S.W. Xue, X.T. Zua, W.G. Zheng, M.Y. Chen, X. Xiang. Effects of annealing and dopant concentration on the optical characteristics of ZnO:Al thin films by sol–gel technique. Physica B. 382 (2006): 201~204
57 G. Srinivasan, N. Gopalakrishnan, Y.S. Yu, R. Kesavamoorthy. Influence of post-deposition annealing on the structural and optical properties of ZnO thin films prepared by sol–gel and spin-coating method. Superlattices and Microstructures. 43 (2008): 112~119
58 S. Mridha, D. Basak. Effect of thickness on the structural, electrical and optical properties of ZnO films. Materials Research Bulletin. 42 (2007) 875~882
59 B. Wessler, F.F. Lange, W. Mader. Textured ZnO thin films on (0001) sapphire produced by chemical solution deposition. J. Mater. Res.Vol. 17, No. 7(2002)
60 Hashimoto M,ZhouY,Kanamura M, Asahi H. GaN-based magnetic semiconductors for nanospintronics. Solid State Commun. 2002, 122, 37
61张倍榕.利用溶胶凝胶法制作用于氮化镓发光二极管之氧化锌缓冲层.国立台北科技大学硕士学位论文. 2007:6~9
62 C.-W. Kwon, A. Poquet, S. Mornet etal. Electronegativity and chemical hardness: two helpful concepts for understanding oxide nanochemistry. Materials Letters. 51(2001). 402~413
63刘敏,掺杂纳米Ti02半导体催化剂的制备与光催化性能研究,合肥工业大学硕士学位论文, 2004
64陈雯雯.溶胶一凝胶法制备A1掺杂ZnO(AZO)薄膜及其性能研究.合肥工业大学硕士学位论文. 2007
65陈宗淇,王光信,徐桂英.胶体与界面化学.高等教育出版社. 2001,104~111
66 Yoshihiro KOKUBUN, Hiroko KIMURA, Shinji NAKAGOM. Preparation of ZnO Thin Films on Sapphire Substrates by Sol-Gel Method. Jpn. J. Appl. Phys. Vol. 42 (2003) pp. L 904~L 906
67 M. Yoshimoto, T. Maeda, T. Ohnishi, H. Koinuma, O etal. Room-temperature growth of AlN/TiN epitaxial multi-layer by laser molecular beam epitaxyAppl. Phys. Lett. 67 (1995) 2615
68 S.F.Chichibu, T.Yoshida, T.Onuma, H.Nakanishi.Helicon-wave-excited -plasma sputtering epitaxy of ZnO on sapphire (0001) substrates J. Appl.Phys. 91 (2002) 874
69 S. Mridha, D. Basak. Effect of thickness on the structural, electrical and optical properties of ZnO films. Materials Research Bulletin. 42 (2007) 875~882