UHF电视发射机全固态高频线性功率放大器研究与实践
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摘要
功率等级在10KW以上的UHF(特高频)电视发射机,其高频线性功率放大器普遍采用电子管、速调管、感应输出管(IOT)等电真空管放大器件。它们与晶体管(全固态)高频线性功率放大器相比,存在着稳定性及可靠性差、效率低、运行费用高、发射机体积大、日常维护工作量大、高压供电不安全、必须采用主机和备机的运行方式来确保电视节目不停播等缺点。
     近年来,美国的HARRIS和MAR、荷兰的PHILIPS、法国的THOMSON、日本的TOSHIBA和NEC等公司都在不断地致力于新材料和新型晶体管放大器件的研制开发,并提供各种应用解决方案。随着新一代半导体高频功率放大管的一些突破性变革和多种技术的推陈出新,电真空管功率放大器正在被全固态高频线性功率放大器逐步取代。在这方面,国外的技术水平远远领先国内,他们基本垄断了10KW以上的UHF全固态电视发射机的生产。
     笔者在总结和借鉴国内外有关UHF全固态电视发射机高频线性功率放大器研究成果的基础上,对目前国内电视发射台普遍采用的UHF10KW电子管电视发射机高频线性功率放大器进行了深入研究,并广泛征求重庆电视发射台工程师的意见,在重庆大学高潮教授和郭永彩教授的指导下,提出了切实可行的固态化改造方案,并在重庆电视发射台实践成功。通过该课题的研究,使我的科研水平得到了提高,实践动手能力得到了锻炼,知识面得到了拓宽。本文的主要研究内容和创造性成果如下:
     (1)介绍了在UHF波段实现电视信号无线覆盖,对电视发射机输出功率的特殊要求,分析了对UHF电视发射机高频线性功率放大器进行研究的重要意义。指出:寻求先进、高效、实用、稳定、可靠的UHF电视发射机高频线性功率放大器,至今仍是一个十分重要的技术课题。
     (2)对UHF全固态电视发射机高频线性功率放大器的组成方式进行了研究。介绍了因单个高频大功率晶体管输出能力有限而采用多管并联运用(积木式)的方法。分析了UHF全固态电视发射机的突出优点。
     (3)对当前高频大功率晶体管制造技术的最新科技成果和未来发展方向进行了研究。介绍了双极型晶体管、MOS—FET晶体管、LDMOS—FET晶体管的优缺点,介绍了最新开发的,代表目前国际先进水平的,工作在UHF波段的部分MOS—FET晶体管、LDMOS—FET晶体管的技术参数。
     (4)重点研究了UHF全固态电视发射机高频线性功率放大器的关键技术:平衡式晶体管高频线性功率放大器以及3dB功率合成(分配)技术。
    
    重庆大学硕士学位论文
    中文摘要
     (5)2002年8月至2003年4月期间,在对重庆电视发射台14频道(UHF)
    10Kw电子管电视发射机进行研究分析的基础上,提出了对该机末前级400w电子
    管功率放大器进行固态化改造的方案并予以实施。改造后投入使用至今,技术指
    标稳定,设备运行正常,节约了运行经费,确保了重庆电视台第二套节目的安全
    播出。实践证明,此方案实现了先进、高效、实用、稳定、可靠的目标,不仅符
    合我国现阶段国情,而且切实可行,具有现实意义和推广价值。
As for the TV transmitter of UHF of which the power grade is above 10KW, the valve power amplifier such as the electron tube, klystron and IOT are widely adopted in high-frequency linear power amplifier. To compare with transistor (complete solid-state) high-frequency linear power amplifier, there are some disadvantages: bad stability and reliability, low efficiency, high cost for operating, huge cabinet, heavy maintenance work load, low security for high-voltage electricity offering, and to ensure the continuance of TV program, the transmitter must be operating with main frame and spare frame.
    Recent years, HARRIS and MAR in USA, PHILIPS in HOLLAND, THOMSON in FRANCE and TOSHIBA, NEC in Japan have been doing efforts in researching and exploiting of new material and new kinds of transistor amplifier and have offered varieties of schemes. As the great reform and progress in a lot of techniques have been made in the new generation of semiconductor high-frequency power amplifier, valve power amplifiers are replacing by complete solid-state high-frequency linear power amplifiers gradually. In this aspect technology abroad is far more higher than inland, almost dominates the manufacture of UHF complete solid-state TV transmitters above 10KW.
    On the base of summarizing and reference to the achievement of UHF complete solid-state high-frequency power amplifier abroad, the author have made a deep research in UHF 10KW electron tube TV transmitter power amplifiers which are widely used inland, and asked for ideas of a lot of engineers of Chongqing TV transmitting station, brought forward a practicable solidification scheme under the guidance of prof. Gao Chao and prof. GuoYongcai, and made a successful practice at Chongqing TV transmitting station. Through the research of this subject, my level of scientific research has been advanced, the operational ability is exercised and the knowledge is broadened. The main contents and creative results of the paper are given as follows:
    (1) Introduced the special requirement of output power for TV transmitter, on condition that the wireless coverage of TV signal is achieved at UHF, analyzed the important meaning of the research in high frequency linear power amplifiers of UHF transmitter. Pointed out that it is a very important subject to look for the advanced, high-efficiency, useable, stable, reliable high linear power amplifier of UHF TV
    
    
    transmitter by now.
    (2) Made a research in the composing mode of the high-frequency linear power amplifier of UHF complete solid-state transmitter. Introduced the method of multi-transistor modular design, for the output ability are limited in single high-frequency power transistor. Analyzed the outstanding advantages of UHF complete solid-state transmitter.
    (3) Made a research in the new technical fruit and future prospect of currently technology of high-frequency power transistor. Introduced the advantages and disadvantages of the bipolar transistor, MOS-FET transistor, LDMOS-FET transistor, and the parameters of MOS-FET transistor, LDMOS-FET transistor in the UHF, which presents the advanced technology over the world.
    (4) Specially made a research in the key technology of UHF complete solid-state high-frequency linear power amplifier: balancing transistor high-frequency linear power amplifier and the technology of 3dB power integrating (allocating).
    (5) From August, 2002 to April, 2003, on the base of analyzing of 10KW valve TV transmitter of channel 14, Chongqing TV transmitting station, brought forward process the solidification scheme to 400W valve power amplifier of the driver. After advance, technical index keeps stable, equipment operates normally, running cost has been saved, ensured the broadcasting of CQTV-2 safely. Practicing proved that this scheme achieved the aim that to be advanced, high efficiency, practical, stable, reliable. Not only accord with the national instance but also practical, having practical means and are valuable to be popularized.
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