离子束技术在超低损耗薄膜中的应用
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摘要
超低损耗薄膜在光学仪器中得到了越来越广泛的应用。离子束辅助沉积技术是在真空镀膜的基础上发展起来的,克服了传统热蒸发技术存在的缺点,成本低廉。在光学薄膜的制备中发挥着越来越重要的作用,应用于薄膜制备过程中的各个方面。因此,研究离子束辅助沉积对于薄膜的损耗的影响具有很好的应用前景。
本文基于单层膜的矩阵,利用菲涅耳公式从理论上推导了光波垂直入射时薄膜的吸收损耗和散射损耗理论公式;制备了不同离子参数辅助下的单层薄膜,研究离子参数(离子能量和束流密度)对于薄膜损耗的影响。
研究结果表明,HfO_2、SiO_2、Ta_2O_5薄膜的折射率随离子能量和束流密度的增加而增加;HfO_2、SiO_2薄膜的消光系数随离子能量和束流密度的增加出现了减小,再增大,再减小,再增大的变化,即薄膜吸收损耗是一个反复变化的过程;薄膜的表面形貌分析显示,离子能量和束流密度的增加改善了薄膜表面的粗糙度,但是这种改善是轻微的;与传统热蒸发技术相比,离子辅助技术大大降低了薄膜的损耗,低离子能量高束流密度有利于沉积高质量的薄膜;HfO_2与SiO_2薄膜的实验结果相比, SiO_2薄膜的折射率、消光系数对于离子能量和束流密度的变化不敏感,这是由材料的差异造成的,所以不同的材料有不同的离子辅助最佳工艺,不能一视同仁,应该区别对待;XRD图谱显示,制备出的HfO_2、SiO_2、Ta_2O_5薄膜具有典型的无定形非晶结构;从XPS图谱可知,薄膜的化学计量比十分接近理论值。
在单层膜的基础上设计、制备了1064nm双层增透膜,对其损耗的研究验证了对单层膜损耗分析的正确性。
The ultra-low loss films is widely used in optical instruments. Ion beam technology has been developed from traditional vacuum deposition,and overcomed the shortcoming of traditional vacuum deposition and low cost. Now, it plays an more and more important role in the deposition of the thin films, and has been applyed to all respects of films deposition. So, it has very good application prospects to study the influence of ion beam aided deposition on loss of films.
In this paper, based on matrix of monolayer, the theory formula of absorption loss and scattering loss were gotten when the incidence of light wave was 0°, utilizing Fresnel formula. The monolayer films was deposited with different ion aided parameters, and the influence of ion beam parameter(ion energy and ion beam flux density) on loss of those films was studied.
The result shows that the refraction index of HfO_2,SiO_2,Ta_2O_5 increases with the increasing of ion energy and ion beam flux density, the extinction coefficient of HfO_2,SiO_2 appears reciprocating up and down with the increasing of ion energy and ion beam flux density, it means that the absorption loss changs repeately. The analysis of films surface shows that the roughness of surface reduces with the increasing of ion energy and ion beam flux density, but the chang is slight. Compared with the traditional heat evaporation technology, the loss of films reduces greatly after using the ion beam technology, high-quality films may be gotten in low ion energy and high ion beam flux density. Compared with experimental result of HfO_2, the refraction index and extinction coefficient of SiO_2 films are not sensitive to the change of the ion energy and ion beam flux density, because of difference of the material itself, so it is right to deposite different materials with different suitable ion energy and ion beam flux density, and it should be treated with a certain discrimination. XRD shows that HfO_2,SiO_2,Ta_2O_5 have typical amorphous noncrystalline structure.Known from XPS that the composition of HfO_2,SiO_2 is very close to the theory value.
Based on monolayer, 1064nm anti-reflection double-layers was designed and deposited, the analysis on its loss had verified the right of analysing on loss of the monolayer.
本文基于单层膜的矩阵,利用菲涅耳公式从理论上推导了光波垂直入射时薄膜的吸收损耗和散射损耗理论公式;制备了不同离子参数辅助下的单层薄膜,研究离子参数(离子能量和束流密度)对于薄膜损耗的影响。
研究结果表明,HfO_2、SiO_2、Ta_2O_5薄膜的折射率随离子能量和束流密度的增加而增加;HfO_2、SiO_2薄膜的消光系数随离子能量和束流密度的增加出现了减小,再增大,再减小,再增大的变化,即薄膜吸收损耗是一个反复变化的过程;薄膜的表面形貌分析显示,离子能量和束流密度的增加改善了薄膜表面的粗糙度,但是这种改善是轻微的;与传统热蒸发技术相比,离子辅助技术大大降低了薄膜的损耗,低离子能量高束流密度有利于沉积高质量的薄膜;HfO_2与SiO_2薄膜的实验结果相比, SiO_2薄膜的折射率、消光系数对于离子能量和束流密度的变化不敏感,这是由材料的差异造成的,所以不同的材料有不同的离子辅助最佳工艺,不能一视同仁,应该区别对待;XRD图谱显示,制备出的HfO_2、SiO_2、Ta_2O_5薄膜具有典型的无定形非晶结构;从XPS图谱可知,薄膜的化学计量比十分接近理论值。
在单层膜的基础上设计、制备了1064nm双层增透膜,对其损耗的研究验证了对单层膜损耗分析的正确性。
The ultra-low loss films is widely used in optical instruments. Ion beam technology has been developed from traditional vacuum deposition,and overcomed the shortcoming of traditional vacuum deposition and low cost. Now, it plays an more and more important role in the deposition of the thin films, and has been applyed to all respects of films deposition. So, it has very good application prospects to study the influence of ion beam aided deposition on loss of films.
In this paper, based on matrix of monolayer, the theory formula of absorption loss and scattering loss were gotten when the incidence of light wave was 0°, utilizing Fresnel formula. The monolayer films was deposited with different ion aided parameters, and the influence of ion beam parameter(ion energy and ion beam flux density) on loss of those films was studied.
The result shows that the refraction index of HfO_2,SiO_2,Ta_2O_5 increases with the increasing of ion energy and ion beam flux density, the extinction coefficient of HfO_2,SiO_2 appears reciprocating up and down with the increasing of ion energy and ion beam flux density, it means that the absorption loss changs repeately. The analysis of films surface shows that the roughness of surface reduces with the increasing of ion energy and ion beam flux density, but the chang is slight. Compared with the traditional heat evaporation technology, the loss of films reduces greatly after using the ion beam technology, high-quality films may be gotten in low ion energy and high ion beam flux density. Compared with experimental result of HfO_2, the refraction index and extinction coefficient of SiO_2 films are not sensitive to the change of the ion energy and ion beam flux density, because of difference of the material itself, so it is right to deposite different materials with different suitable ion energy and ion beam flux density, and it should be treated with a certain discrimination. XRD shows that HfO_2,SiO_2,Ta_2O_5 have typical amorphous noncrystalline structure.Known from XPS that the composition of HfO_2,SiO_2 is very close to the theory value.
Based on monolayer, 1064nm anti-reflection double-layers was designed and deposited, the analysis on its loss had verified the right of analysing on loss of the monolayer.
引文
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