PTCDA/p-Si光电探测器的研制与性能研究
|
摘要
PTCDA/p-Si有机/无机光电探测器是一种新型的光电转换器件,具有性能稳定、响应速度快、灵敏度高等特点,其对可见光至近红外区的光具有高量子光电转换效率及宽带响应。
本文主要研究PTCDA/p-Si光电探测器的研制。制备了PTCDA并进行了提纯,分析了不同纯度PTCDA材料制备的探测器的性能。通过比较不同电极材料制备的探测器的性能选择出最佳电极材料。制备了Al/ITO/PTCDA/p-Si/Al和Al/Ni/ITO/PTCDA/p-Si/Al两种结构的光电探测器。研究了两种结构的探测器的性能。
PTCDA/p-Si organic-inorganic photo-electric detector is a novel device.This detector has many significant properties such as stable performance,fast response speed,high sensitivity,especially its high quantum photoelectric conversion efficiency and broad-band response in visible and near infrared bands.
This thesis is mainly focused on the preparation of PTCDA/p-Si Photo-electronic detector,preparation and purification of PTCDA.The performance of detectors prepared with different purity levels of PTCDA was analyzed.The detector with the best performance was used to select the best electrode.And it was analyzed that the cathode effect on the performance.The photo-electronic detectors with both Al/ITO/PTCDA/p-Si/Al and Al/Ni/ITO/PTCDA/p-Si/Al structures were prepared.We studied the preparation and characterization of the detectors.
本文主要研究PTCDA/p-Si光电探测器的研制。制备了PTCDA并进行了提纯,分析了不同纯度PTCDA材料制备的探测器的性能。通过比较不同电极材料制备的探测器的性能选择出最佳电极材料。制备了Al/ITO/PTCDA/p-Si/Al和Al/Ni/ITO/PTCDA/p-Si/Al两种结构的光电探测器。研究了两种结构的探测器的性能。
PTCDA/p-Si organic-inorganic photo-electric detector is a novel device.This detector has many significant properties such as stable performance,fast response speed,high sensitivity,especially its high quantum photoelectric conversion efficiency and broad-band response in visible and near infrared bands.
This thesis is mainly focused on the preparation of PTCDA/p-Si Photo-electronic detector,preparation and purification of PTCDA.The performance of detectors prepared with different purity levels of PTCDA was analyzed.The detector with the best performance was used to select the best electrode.And it was analyzed that the cathode effect on the performance.The photo-electronic detectors with both Al/ITO/PTCDA/p-Si/Al and Al/Ni/ITO/PTCDA/p-Si/Al structures were prepared.We studied the preparation and characterization of the detectors.
引文
[1]张金国,我国光电子技术及产业发展的思考和建议,飞通光电子技术,2001,1(3):121-126;
[2]张福甲,王德明,PTCDA/p-Si异质结势垒的形成及电流传输机理分析,甘肃科学学报,2000,12(1):1-5;
[3]So F.F.,Forrest S.R.,IEEE.Trans.,1989,ED36(1):66;
[4]Burrows P.E.,Forrest S.R.,Appl.Phys.Lett.,1994:64(17):2285;
[5]原荣,《光纤通信网络》,电子工业出版社,1999;
[6]Q.Chen等,半导体情报,1996,5:46;
[7]张锋生,龚全宝,《光电子器件应用基础》,机械工业出版社,1993;
[8]罗先和,张广军等,《光电检测技术》,北京航空航天大学出版社,1995;
[9]李玲,黄永清,《光纤通信技术基础》,天津大学出版社,1998;
[10]祁菁,PTCDA/p-Si光电探测器的研制及其性能研究,2000;
[11]C.Seidel,C.Awater,X.D.Liu,et al.Surface Science,1997,371:123;
[12]M.St(o|¨)hr,M.Gabriel,R.M(o|¨)ller,Surface Science,2002,507-510:330;
[13]J.B.Gustafsson,E.Moons,et al,Surface Science,2004,572:23;
[14]T.Schmitz-Hubsch,T.Fritz,F.Sellam,et al,Phys Rev,1996,B55:7972;
[15]I.Chizhov,A.Kahn,G.Scoles,J.Crystal Growth,2000,208:409;
[16]C.Kendrick,A.Kahn,Surf Rev Lett,1998,5:289;
[17]C.Kendrick,A.Kahn,Appl Surf Sci,1998,123:405;
[18]HiroyukiYanane,et al,Phys Rev,2003,B68:033102;
[19]H.P.Wagner,A.DeSilva,Phys Rev,2004,B70:235201;
[20]O.D.GorDan,S.Hermann,M.Friedrich,et al,J Appl Phys,2005,97:063518;
[21]F.F.So,S.R.Forrest,Y.Q.Shi,W.H.Steier,Appl Phys Lett,1980,56(7):674;
[1]张福甲等,有机半导体PTCDA的制备及其结构表征和光吸收特性的研究,发光学报,1999,20(4):351-357;
[2]F.J.Zhang et al,J.Semiconductor Photonics and Technology,1997,3(4):248-255;
[3]C.W.Tang,S.A.Vanslyke.Appl Phys Lett,1987,51:913-915;
[4]H.Fuchigami,S.Tanimura,Y.Uehara,et.al,J.J.Appl.Phys.1995,34(7B):3852-3857;
[5]D.L Mathine,H.S.Woo,W.He,Appl.Phys.Lett,2000,76:3849-3851;
[6]S.R.Forrest,M.L.Kaplan,P.H.Schmidt,J Appl Phys,1984,56(2):543;
[7]张福甲,王德明,甘肃科学学报,2000,12(1):1;
[8]何智兵,黄勇刚等,材料导报,2000,14(10):51;
[9]J.R.Ostrick,A.Dodabalapur,et al,J Appl Phys,1997,81(10):6804;
[10]S.R.Forrest,M.L.Kaplan,P.H.Schmidt,J.Appl.Phys,1984,55(6):1492-1507;
[11]K.Iwasaki,K.Umishita,et al,Synthetic Metals,2001,121:1395;
[12]Paul H.Schmidt,et al,Appl Phys Lett,1982,40(1):93;
[13]A.J.Lovinger,S.R.Forrest,et al,J Appl Phys,1984,55(2):476;
[14]S.R.Forrest,M.L.Kaplan,P.H.Schmidt,J Appl Phys,1982,41(1):90;
[15]S.R.Forrest,M.L.Kaplan,P.H.Schmidt,J Appl Phys,1984,41(8):708;
[16]E.R.Hovestreydt,J Appl.Cryst,1983,16:651;
[17]R.Scholz,I.Vragovic.et al,Phys.stat.sol,2002,(b) 234(1):402-410;
[18]张德江,有机/无机半导体异质结特性研究及其光电探测器的研制,1999;
[19]T.U.Kampen,A.M.Paralan,et al,Phys.Stat Sol,2001(a) 188(4):1307-1317;
[20]华彤文等,《普通化学原理》(第二版),北京大学出版社,1993:260-278;
[21]伍越寰等,《有机化学》,中国科学技术大学出版社,1994:354;
[22]蒋硕健等,《有机化学》,北京大学出版社,1996:210;
[23]W.R.Smythe,ea al,《Static and Dynamic Electricity》McGraw-Hill,New York 1950;
[24]A.K.Ghosh,T.Feng,J.Appl.Phys,1978,49:5982;
[25]S.R.Forrest,M.LKaplan,P.H.Schmidt,Ann.Rev.Materical.Sci,1987,17:189;
[26]朱彭玲,云自厚,谢光华,《现代液相色谱学》,兰州大学出版社,1989
[27]《分析技术辞典》,科学出版社,1980;
[28]中南矿冶学院分析化学教研室,《化学分析手册》,科学出版社,1982;
[29]陈耀祖等,《有机分析》,高等教育出版社,1983;
[30]黄涛等,《有机化学实验》,高等教育出版社,1984;
[31]夏忠英等,《有机化学实验》,中国中医药出版社,1996;
[32]G.Binnig,C.F.Quate and C.Gerber,Phys.Rev.Lett.,56(1986):930;
[33]白春礼,田芳,罗克,《扫描力显微术》,科学出版社,2000年,212;
[34]F.H.Stillinger,T.A.Weber,Phys.Rev,1985,31:5262;
[35]张立德,《纳米材料和纳米结构》,科学出版社,2001;
[36]陈治明,王建农,《半导体器件的材料物理基础》,科学出版社,1999;
[37]王中林,《纳米材料表征》,化学工业出版社,2005;
[38]左演声,陈文哲,梁伟,《材料现代分析方法》,北京工业大学出版社,2000;
[39]孙硕,功能薄膜在有机光电探测器中的应用研究,2008;
[40]黄智,硅基有机光电探测器的理论及研制,2002;
[41]Zhang Fu-jia,Wang De-ruing.Chinese Semiconductor Optoelectronics,2000,21(3):182;
[42]Zhang Fu-jia,Wang De-ming.Gansu Sciences,2000,12(1):1-5.
[43]Zhang Fu-jia,Shao Jia-feng,Zhang De-jiang,et al.J.Luminescence,1999,20(4):351-357.
[44]G.Salvan,D.A.Tenne,A.Das,et al.Organic Electronics,2000(1):49-56.
[45]T.Soubiron,F.Vaurette,J.P.Nys,et al.surface science,(581)2005:178-188.
[1]T.U.Kampen,A.M.Paralan,et al,Phys.Stat Sol,2001(a) 188(4):1307-1317;
[2]S.R.Forrest,M.L.Kaplan,P.H.Schmidt,J.Appl.Phys,1984,55(6):1492-1507;
[3]施敏,半导体器件物理[M].黄振岗译.北京:电子工业出版社,1987.177-178;
[4]张福甲等,Si基有机异质结势垒特性的研究,半导体光电,2000,21(3);
[5]张福甲,王德明,PTCDA/p-Si异质结势垒的形成及电流传输机理分析,甘肃科学学报,2000,12(1):1
[6]S R Forrest,P H Schmidt.J.Appl.Phys,1986,59(2):513.
[1]范志新,液晶器件工艺基础,北京邮电大学出版社,2001,6.
[2]马颖,张方辉,牟强,陕西科技大学学报,2003,2:106-109;
[3]彭国贤,真空科学与技术,1984,4(5):339-346;
[4]韩雪,夏慧,吴丽君,电子元件与材料,1998,2:31-35;
[5]张树高,黄伯云,方勋华.材料导报,1997,11(4):11-14;
[6]B.H.Lee.I.G.Kim.S.W.Cho,S.H.Lee,Thin Solid Films,1997,302:25;
[7]B.J.Luff,J.S.Wilkinson,G.Perrone,Appl.Opt.1997,36:7066.
[8]J.S.Kim,M.GranstroEm,R.H.Friend,et al.,J.Appl.Phys.1998,84:6859.
[9]I.D.Parker,J.Appl.Phys.1994,75:1656.
[101 C.C.Wu,C.I.Wu,J.C.Sturm,et al,Appl.Phys.Lett.1997,70:348.
[11]姜菱昌,胡勇,真空,1995,12:1-8;
[12]王树林,夏冬林,玻璃与搪瓷,2004 10;
[13]S.Shanthi,C.Subramanian,P.Ramasamy,Materials Science and Engineering,1999,57(B):127-134;
[14]C.C.Wu,C.I.Wu,J.C.Sturm,A.Kahn,Appl.Phys.Lett,1997(70):1348.
[15]T.Maruyama,K.Fukui,Thin Solid Films,1991,203(2):297-302.
[16]Q.C.Wang,Y.T.Qian,Z.T.Chen,et al,Thin Solid Films,1995,264(1):25-27.
[17]J.Zheng,M.H.Wu,J.ZGu,et al.Sensors and Actuators B.2003,94:216-221;
[18]M.Sawada,M.Higuchi,Thin Solid Films,1998,317:157-160;
[19]殷景华,王雅珍等,功能材料概论,哈尔滨工业大学出版社,1999;
[20]赵化侨等,等离子体化学,中国科技大学出版社,1993;
[21]J.K.Vossen,W.Kern,Thin Film Processes,Academic Press,1978;
[22]候鹤岚,真空,2001,2(1):18-22;
[23]E.Umbach,M.Sokolowski,R.Fink,Appl.Phys.A,1996,63:565-576.
[24]T.Soubiron,F.Vaurette,B.Grandidier,et al.Nanotech,2004,3:383-386.
[25]ZHANG Fu-jia,WANG De-ming.Gansu Sciences,2000,12(1):1-5.
[26]D.M.Brown,M.Ghezzo,P.L.Sargent,IEEE Trans.Electron Devices,1978,25:79;
[27]R.W.Birkmire,B.E.McCandless,W.N.Shafermann,Sol.Cells,1988,23:115;
[28]C.H.L.Witjens,P.A.C.Van Loon,J.Electrochem.Soc.,1990,137:3928;
[29]S.K.Saha,R.S.Howell,M.K.Hatalis,J.Appl.Phys.,2000.
[1]He Xiyuan,Zhang Xu,Zheng Daishun,Gao zhaoyang,Zhang Fujia,J.Optoelecteonics·Laser,2003,14(4):336-341;
[2]Zhang Fujia,Wang De-ming,Zhang Dejiang.J.Gansu science.2000,12(1):1-5.
[2]张福甲,王德明,PTCDA/p-Si异质结势垒的形成及电流传输机理分析,甘肃科学学报,2000,12(1):1-5;
[3]So F.F.,Forrest S.R.,IEEE.Trans.,1989,ED36(1):66;
[4]Burrows P.E.,Forrest S.R.,Appl.Phys.Lett.,1994:64(17):2285;
[5]原荣,《光纤通信网络》,电子工业出版社,1999;
[6]Q.Chen等,半导体情报,1996,5:46;
[7]张锋生,龚全宝,《光电子器件应用基础》,机械工业出版社,1993;
[8]罗先和,张广军等,《光电检测技术》,北京航空航天大学出版社,1995;
[9]李玲,黄永清,《光纤通信技术基础》,天津大学出版社,1998;
[10]祁菁,PTCDA/p-Si光电探测器的研制及其性能研究,2000;
[11]C.Seidel,C.Awater,X.D.Liu,et al.Surface Science,1997,371:123;
[12]M.St(o|¨)hr,M.Gabriel,R.M(o|¨)ller,Surface Science,2002,507-510:330;
[13]J.B.Gustafsson,E.Moons,et al,Surface Science,2004,572:23;
[14]T.Schmitz-Hubsch,T.Fritz,F.Sellam,et al,Phys Rev,1996,B55:7972;
[15]I.Chizhov,A.Kahn,G.Scoles,J.Crystal Growth,2000,208:409;
[16]C.Kendrick,A.Kahn,Surf Rev Lett,1998,5:289;
[17]C.Kendrick,A.Kahn,Appl Surf Sci,1998,123:405;
[18]HiroyukiYanane,et al,Phys Rev,2003,B68:033102;
[19]H.P.Wagner,A.DeSilva,Phys Rev,2004,B70:235201;
[20]O.D.GorDan,S.Hermann,M.Friedrich,et al,J Appl Phys,2005,97:063518;
[21]F.F.So,S.R.Forrest,Y.Q.Shi,W.H.Steier,Appl Phys Lett,1980,56(7):674;
[1]张福甲等,有机半导体PTCDA的制备及其结构表征和光吸收特性的研究,发光学报,1999,20(4):351-357;
[2]F.J.Zhang et al,J.Semiconductor Photonics and Technology,1997,3(4):248-255;
[3]C.W.Tang,S.A.Vanslyke.Appl Phys Lett,1987,51:913-915;
[4]H.Fuchigami,S.Tanimura,Y.Uehara,et.al,J.J.Appl.Phys.1995,34(7B):3852-3857;
[5]D.L Mathine,H.S.Woo,W.He,Appl.Phys.Lett,2000,76:3849-3851;
[6]S.R.Forrest,M.L.Kaplan,P.H.Schmidt,J Appl Phys,1984,56(2):543;
[7]张福甲,王德明,甘肃科学学报,2000,12(1):1;
[8]何智兵,黄勇刚等,材料导报,2000,14(10):51;
[9]J.R.Ostrick,A.Dodabalapur,et al,J Appl Phys,1997,81(10):6804;
[10]S.R.Forrest,M.L.Kaplan,P.H.Schmidt,J.Appl.Phys,1984,55(6):1492-1507;
[11]K.Iwasaki,K.Umishita,et al,Synthetic Metals,2001,121:1395;
[12]Paul H.Schmidt,et al,Appl Phys Lett,1982,40(1):93;
[13]A.J.Lovinger,S.R.Forrest,et al,J Appl Phys,1984,55(2):476;
[14]S.R.Forrest,M.L.Kaplan,P.H.Schmidt,J Appl Phys,1982,41(1):90;
[15]S.R.Forrest,M.L.Kaplan,P.H.Schmidt,J Appl Phys,1984,41(8):708;
[16]E.R.Hovestreydt,J Appl.Cryst,1983,16:651;
[17]R.Scholz,I.Vragovic.et al,Phys.stat.sol,2002,(b) 234(1):402-410;
[18]张德江,有机/无机半导体异质结特性研究及其光电探测器的研制,1999;
[19]T.U.Kampen,A.M.Paralan,et al,Phys.Stat Sol,2001(a) 188(4):1307-1317;
[20]华彤文等,《普通化学原理》(第二版),北京大学出版社,1993:260-278;
[21]伍越寰等,《有机化学》,中国科学技术大学出版社,1994:354;
[22]蒋硕健等,《有机化学》,北京大学出版社,1996:210;
[23]W.R.Smythe,ea al,《Static and Dynamic Electricity》McGraw-Hill,New York 1950;
[24]A.K.Ghosh,T.Feng,J.Appl.Phys,1978,49:5982;
[25]S.R.Forrest,M.LKaplan,P.H.Schmidt,Ann.Rev.Materical.Sci,1987,17:189;
[26]朱彭玲,云自厚,谢光华,《现代液相色谱学》,兰州大学出版社,1989
[27]《分析技术辞典》,科学出版社,1980;
[28]中南矿冶学院分析化学教研室,《化学分析手册》,科学出版社,1982;
[29]陈耀祖等,《有机分析》,高等教育出版社,1983;
[30]黄涛等,《有机化学实验》,高等教育出版社,1984;
[31]夏忠英等,《有机化学实验》,中国中医药出版社,1996;
[32]G.Binnig,C.F.Quate and C.Gerber,Phys.Rev.Lett.,56(1986):930;
[33]白春礼,田芳,罗克,《扫描力显微术》,科学出版社,2000年,212;
[34]F.H.Stillinger,T.A.Weber,Phys.Rev,1985,31:5262;
[35]张立德,《纳米材料和纳米结构》,科学出版社,2001;
[36]陈治明,王建农,《半导体器件的材料物理基础》,科学出版社,1999;
[37]王中林,《纳米材料表征》,化学工业出版社,2005;
[38]左演声,陈文哲,梁伟,《材料现代分析方法》,北京工业大学出版社,2000;
[39]孙硕,功能薄膜在有机光电探测器中的应用研究,2008;
[40]黄智,硅基有机光电探测器的理论及研制,2002;
[41]Zhang Fu-jia,Wang De-ruing.Chinese Semiconductor Optoelectronics,2000,21(3):182;
[42]Zhang Fu-jia,Wang De-ming.Gansu Sciences,2000,12(1):1-5.
[43]Zhang Fu-jia,Shao Jia-feng,Zhang De-jiang,et al.J.Luminescence,1999,20(4):351-357.
[44]G.Salvan,D.A.Tenne,A.Das,et al.Organic Electronics,2000(1):49-56.
[45]T.Soubiron,F.Vaurette,J.P.Nys,et al.surface science,(581)2005:178-188.
[1]T.U.Kampen,A.M.Paralan,et al,Phys.Stat Sol,2001(a) 188(4):1307-1317;
[2]S.R.Forrest,M.L.Kaplan,P.H.Schmidt,J.Appl.Phys,1984,55(6):1492-1507;
[3]施敏,半导体器件物理[M].黄振岗译.北京:电子工业出版社,1987.177-178;
[4]张福甲等,Si基有机异质结势垒特性的研究,半导体光电,2000,21(3);
[5]张福甲,王德明,PTCDA/p-Si异质结势垒的形成及电流传输机理分析,甘肃科学学报,2000,12(1):1
[6]S R Forrest,P H Schmidt.J.Appl.Phys,1986,59(2):513.
[1]范志新,液晶器件工艺基础,北京邮电大学出版社,2001,6.
[2]马颖,张方辉,牟强,陕西科技大学学报,2003,2:106-109;
[3]彭国贤,真空科学与技术,1984,4(5):339-346;
[4]韩雪,夏慧,吴丽君,电子元件与材料,1998,2:31-35;
[5]张树高,黄伯云,方勋华.材料导报,1997,11(4):11-14;
[6]B.H.Lee.I.G.Kim.S.W.Cho,S.H.Lee,Thin Solid Films,1997,302:25;
[7]B.J.Luff,J.S.Wilkinson,G.Perrone,Appl.Opt.1997,36:7066.
[8]J.S.Kim,M.GranstroEm,R.H.Friend,et al.,J.Appl.Phys.1998,84:6859.
[9]I.D.Parker,J.Appl.Phys.1994,75:1656.
[101 C.C.Wu,C.I.Wu,J.C.Sturm,et al,Appl.Phys.Lett.1997,70:348.
[11]姜菱昌,胡勇,真空,1995,12:1-8;
[12]王树林,夏冬林,玻璃与搪瓷,2004 10;
[13]S.Shanthi,C.Subramanian,P.Ramasamy,Materials Science and Engineering,1999,57(B):127-134;
[14]C.C.Wu,C.I.Wu,J.C.Sturm,A.Kahn,Appl.Phys.Lett,1997(70):1348.
[15]T.Maruyama,K.Fukui,Thin Solid Films,1991,203(2):297-302.
[16]Q.C.Wang,Y.T.Qian,Z.T.Chen,et al,Thin Solid Films,1995,264(1):25-27.
[17]J.Zheng,M.H.Wu,J.ZGu,et al.Sensors and Actuators B.2003,94:216-221;
[18]M.Sawada,M.Higuchi,Thin Solid Films,1998,317:157-160;
[19]殷景华,王雅珍等,功能材料概论,哈尔滨工业大学出版社,1999;
[20]赵化侨等,等离子体化学,中国科技大学出版社,1993;
[21]J.K.Vossen,W.Kern,Thin Film Processes,Academic Press,1978;
[22]候鹤岚,真空,2001,2(1):18-22;
[23]E.Umbach,M.Sokolowski,R.Fink,Appl.Phys.A,1996,63:565-576.
[24]T.Soubiron,F.Vaurette,B.Grandidier,et al.Nanotech,2004,3:383-386.
[25]ZHANG Fu-jia,WANG De-ming.Gansu Sciences,2000,12(1):1-5.
[26]D.M.Brown,M.Ghezzo,P.L.Sargent,IEEE Trans.Electron Devices,1978,25:79;
[27]R.W.Birkmire,B.E.McCandless,W.N.Shafermann,Sol.Cells,1988,23:115;
[28]C.H.L.Witjens,P.A.C.Van Loon,J.Electrochem.Soc.,1990,137:3928;
[29]S.K.Saha,R.S.Howell,M.K.Hatalis,J.Appl.Phys.,2000.
[1]He Xiyuan,Zhang Xu,Zheng Daishun,Gao zhaoyang,Zhang Fujia,J.Optoelecteonics·Laser,2003,14(4):336-341;
[2]Zhang Fujia,Wang De-ming,Zhang Dejiang.J.Gansu science.2000,12(1):1-5.