硅衬底氮化镓基蓝光LED发光特性研究
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摘要
氮化镓(GaN)基发光二极管(LED)以其发光效率高、使用寿命长等优点现已在普通照明应用中推广,而单晶硅是目前工艺最成熟,价格最便宜,能获尺寸最大的半导体材料,因此在Si衬底上外延生长GaN薄膜已经成为了当前的研究热点,并逐步走向成熟。GaN基LED工作在较高的注入电流密度下时,发光的量子效率会随着电流密度的增大而下降(droop效应),如何解决droop效应,降低LED在普通照明应用中的成本,已成为目前国内、外亟待攻克的难关。本论文利用MOCVD在Si衬底上制备GaN基LED样品,主要在以下五个方面研究了LED的发光特性：
1、研究了压电极化对LED发光峰的影响。由在Si衬底生长的GaN基单阱和多阱蓝光样品发光的变温电致发光(EL)谱显示：在压电极化不会被屏蔽的低电流密度注入下,LED的发光波长随着工作温度下降出现红移,表明压电极化对LED发光主波长的影响超过了量子阱的禁带带隙随温度下降而增大的影响幅度。结果还显示单量了阱(单阱)LED阱中受到的压电极化强度比多量了阱(多阱)中的更大。
2、droop效应的主因不是俄歇复合而是载流子溢出。将样品LED实验测量结果的曲线用ABC模型拟合后发现,即使是俄歇复合系数取值比理论结果大几个数量级,在高电流密度注入时,拟合结果曲线还是高于实验曲线,且差距随注入电流密度的增大而变大,但实验曲线能与假定载流子泄漏为droop效应的主因而拟合的曲线相吻合。
3、研究了载流子填充与LED发光量子效率的关系。由不同温度下单阱LED发光的内量子效率与主波长注入电流密度的变化对比、多阱与单阱LED之间发光的量子效率和主波长随注入电流密度变化的对比显示：电子在阱中被填充在高能态后造成泄漏是载流子溢出的主要方式。
4、以变温EL光谱研究了载流子在LED量子阱中的分布不均衡对LED发光效率的影响,分析了低温下droop效应严重的原因。高质量外延层的多量子阱LED变温EL光谱结果显示：温度的降低会阻碍电流扩展和降低空穴浓度,使电子在阱中局部区域的浓度很高,这些区域中的电子由于填充效应容易越过LED中的势垒而溢出,从而使LED产生严重droop效应。这些结果表明引起droop效应关键是由于载流子在阱中的分布不均衡而溢出。
5、研究了LED出射光谱的主要发光阱位置随温度、注入电流密度的变化而发生移动的现象。由不同位置垒中掺杂Si样品发光主峰随温度下降、注入电流密度增大而发生变化的结果表明：在工作温度较高且电流密度较小的条件下多阱LED的发光由较多个阱贡献,而随着温度的降低或注入电流密度的增大,多阱LED发光的主要贡献阱个数逐渐减少,且更靠近p-GaN层。
Gallium nitride (GaN) based light-emitting diodes (LEDs) are now starting to enter general lighting applications for their advantages of high energy efficiency and long service life. Single-crystal silicon has the most mature technology, the cheapest price and the largest size among the semiconductor materials at present, thus the epitaxial growth of GaN films on Si substrate has currently become a hot researching area and gradually been improved. However, the quantum efficiency will decrease with the increasing current density at high forward injection (efficiency droop), so how to eliminate the efficiency droop and lower the cost in general lighting applications is the most difficult problem to be urgently solved at present. In this paper, GaN-based LED samples were fabricated on Si substrate by MOCVD, and five aspects of luminous characteristics were studied as following:
1. The LEDs emission spectrum is affected by piezoelectric polarization. With the EL spectrum of GaN-based single quantum well (SQW) and multiple quantum wells (MQW) LED on Si substrate, it is found that the dominant wavelength (WLD) will red shift with the decreasing operating temperature under low forward current density which the piezoelectric polarization has not been screen, and this means that the effect of piezoelectric polarization on WLD is higher than increasing bandgap energy by decreasing temperature. The results also show that the intensity of piezoelectric polarization in SQW is higher than that in MQWs.
2. The main factor for efficiency droop is not Auger recombination but electron leakage. The simulation results based on simple ABC model are higher than the measuring experiment results even if Auger coefficient here is several order of magnitude higher than calculated InGaN values at high forward current density, and the difference between the simulation results and the experiment results increases with increasing current density at high forward injection. But the measuring experiment results fit in well with simulation results based on simple ABC model where carrier leakage is supposed the main factor for efficiency droop.
3. The electrons filling up in the wells will affect LED quantum efficiency. Judging the WLD curve and IQE curve of SQW LED as a function of forward current density in the temperature range from100to350K and the differences of those curves between SQW and MQW LEDs, it is found that the electrons will overflow from the well after filling up in higher and higher state with the increasing current density, and electron overflow is the main factor for carrier leakage.
4. With the EL spectrum under different temperature the effect of carrier localized states on quantum efficiency is discussed, and the cause for severe efficiency droop at low operating temperature is analyzed. The EL spectrums at different temperature of high quality MQW LED sample show that the LEDs have worse electron spreading and less hole concentration with decreasing temperature and the electrons will overflow from the well after filled up in higher and higher state for their inhomogeneous distribution, thus efficiency droop will happen at a lower injection more severely for electron leakage under lower temperature. These results confirm that the genuine cause for electron leakage is the severe carrier localized states.
5. The wells which contribute the main output power will shift in the series wells of MQW LEDs under different forward current density or varying operating temperature. With the EL spectrum under different operating temperature of series Si doped barrier LED samples, the results show that the output power is contributed by less wells with the decreasing operating temperature or the increasing forward current density, and the main light-emitting wells will be closer to p-GaN.
1、研究了压电极化对LED发光峰的影响。由在Si衬底生长的GaN基单阱和多阱蓝光样品发光的变温电致发光(EL)谱显示：在压电极化不会被屏蔽的低电流密度注入下,LED的发光波长随着工作温度下降出现红移,表明压电极化对LED发光主波长的影响超过了量子阱的禁带带隙随温度下降而增大的影响幅度。结果还显示单量了阱(单阱)LED阱中受到的压电极化强度比多量了阱(多阱)中的更大。
2、droop效应的主因不是俄歇复合而是载流子溢出。将样品LED实验测量结果的曲线用ABC模型拟合后发现,即使是俄歇复合系数取值比理论结果大几个数量级,在高电流密度注入时,拟合结果曲线还是高于实验曲线,且差距随注入电流密度的增大而变大,但实验曲线能与假定载流子泄漏为droop效应的主因而拟合的曲线相吻合。
3、研究了载流子填充与LED发光量子效率的关系。由不同温度下单阱LED发光的内量子效率与主波长注入电流密度的变化对比、多阱与单阱LED之间发光的量子效率和主波长随注入电流密度变化的对比显示：电子在阱中被填充在高能态后造成泄漏是载流子溢出的主要方式。
4、以变温EL光谱研究了载流子在LED量子阱中的分布不均衡对LED发光效率的影响,分析了低温下droop效应严重的原因。高质量外延层的多量子阱LED变温EL光谱结果显示：温度的降低会阻碍电流扩展和降低空穴浓度,使电子在阱中局部区域的浓度很高,这些区域中的电子由于填充效应容易越过LED中的势垒而溢出,从而使LED产生严重droop效应。这些结果表明引起droop效应关键是由于载流子在阱中的分布不均衡而溢出。
5、研究了LED出射光谱的主要发光阱位置随温度、注入电流密度的变化而发生移动的现象。由不同位置垒中掺杂Si样品发光主峰随温度下降、注入电流密度增大而发生变化的结果表明：在工作温度较高且电流密度较小的条件下多阱LED的发光由较多个阱贡献,而随着温度的降低或注入电流密度的增大,多阱LED发光的主要贡献阱个数逐渐减少,且更靠近p-GaN层。
Gallium nitride (GaN) based light-emitting diodes (LEDs) are now starting to enter general lighting applications for their advantages of high energy efficiency and long service life. Single-crystal silicon has the most mature technology, the cheapest price and the largest size among the semiconductor materials at present, thus the epitaxial growth of GaN films on Si substrate has currently become a hot researching area and gradually been improved. However, the quantum efficiency will decrease with the increasing current density at high forward injection (efficiency droop), so how to eliminate the efficiency droop and lower the cost in general lighting applications is the most difficult problem to be urgently solved at present. In this paper, GaN-based LED samples were fabricated on Si substrate by MOCVD, and five aspects of luminous characteristics were studied as following:
1. The LEDs emission spectrum is affected by piezoelectric polarization. With the EL spectrum of GaN-based single quantum well (SQW) and multiple quantum wells (MQW) LED on Si substrate, it is found that the dominant wavelength (WLD) will red shift with the decreasing operating temperature under low forward current density which the piezoelectric polarization has not been screen, and this means that the effect of piezoelectric polarization on WLD is higher than increasing bandgap energy by decreasing temperature. The results also show that the intensity of piezoelectric polarization in SQW is higher than that in MQWs.
2. The main factor for efficiency droop is not Auger recombination but electron leakage. The simulation results based on simple ABC model are higher than the measuring experiment results even if Auger coefficient here is several order of magnitude higher than calculated InGaN values at high forward current density, and the difference between the simulation results and the experiment results increases with increasing current density at high forward injection. But the measuring experiment results fit in well with simulation results based on simple ABC model where carrier leakage is supposed the main factor for efficiency droop.
3. The electrons filling up in the wells will affect LED quantum efficiency. Judging the WLD curve and IQE curve of SQW LED as a function of forward current density in the temperature range from100to350K and the differences of those curves between SQW and MQW LEDs, it is found that the electrons will overflow from the well after filling up in higher and higher state with the increasing current density, and electron overflow is the main factor for carrier leakage.
4. With the EL spectrum under different temperature the effect of carrier localized states on quantum efficiency is discussed, and the cause for severe efficiency droop at low operating temperature is analyzed. The EL spectrums at different temperature of high quality MQW LED sample show that the LEDs have worse electron spreading and less hole concentration with decreasing temperature and the electrons will overflow from the well after filled up in higher and higher state for their inhomogeneous distribution, thus efficiency droop will happen at a lower injection more severely for electron leakage under lower temperature. These results confirm that the genuine cause for electron leakage is the severe carrier localized states.
5. The wells which contribute the main output power will shift in the series wells of MQW LEDs under different forward current density or varying operating temperature. With the EL spectrum under different operating temperature of series Si doped barrier LED samples, the results show that the output power is contributed by less wells with the decreasing operating temperature or the increasing forward current density, and the main light-emitting wells will be closer to p-GaN.
引文
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