高重复频率MOSFET脉冲调制技术研究
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摘要
能产生短脉冲、快上升沿、快下降沿、高电压、大电流且能工作在兆赫兹频率的固体调制器是脉冲功率技术的一个重要发展方向。本文介绍了由功率MOSFET器件组成的固体调制器的基本工作原理，设计思路。并且由固体调制器的基本框架图，设计了固体调制器的原型。
完整的固体调制器由控制系统，辅助供电部分，开关主体和负载组成。控制系统采用单片机和CPLD为硬件核心，设计了宽度，频率，个数可调的脉冲信号发生器，作为固体调制器的触发信号源。其输出的最小脉宽为12.5ns，多个脉冲的一致性良好。触发信号源的输出采用光纤隔离电路，来增强其抗干扰能力。
根据功率MOSFET的工作原理，分别用分离元件和集成驱动芯片搭建了驱动电路。并且通过电路仿真结合实验结果，确定了驱动电路的主要参数，分析了电路中干扰的来源并给出改进的方案。驱动电路的供电采用可级联的DC／DC模块搭建。
在单个功率MOSFET开关的基础上，讨论了功率回路的选择和保护电路，并分别进行了6个MOSFET并联和4个MOSFET串联的实验，同样使用电路仿真找到对输出波形产生影响的主要参数，并且给出改进方案。
在详细比较直接串联和感应叠加两种产生高压的方法后，最后采用感应叠加的方式来设计调制器，叠加器的设计思路也被详细给出。
最终设计的调制器由3个开关模块叠加而成，在充电电压为800V时，可以得到最短脉宽为33.8ns，前沿为13.9ns，幅度为2.20kV的脉冲。多脉冲情况下也得到良好的脉冲一致性。
Solid state modulator with multi-pulse burst capability in mega Hertz, fast rise and fall times and width agility is the hotspot of pulse power technology. In this paper, the base principle and designing method of the solid state modulator based on power MOSFET devices are introduced. The prototype of the modulator is introduced and the experimental results are given.
The whole solid state modulator was composed of control system, power supply supplemental system, switch circuits, and the load. The kernel hardware of control system was composed of Micro Control Unit (MCU) and Complex Program Logic Device (CPLD). It could generate trigger signal with shortest pulse width of 12.5ns for the driver circuit of power MOSFET, and it also had good performance in multi pulses situation. Optical association circuits were used to protect the control system against the high voltage of the switch circuits.
Two types of driver circuits were designed according to the principle of power MOSFET. One was designed by separated components and the other was by integrated driver chip. Circuit simulations were used to help to analyze the experiment results. The reasons of cross talk in print circuit board were analyzed and improving ways were given. Power supply for driver circuits was designed by DC/DC modules which could work in series connection mode.
After the experiments of Single MOSFET switch, the switch with six MOSFETs parallel connecting and switch with four MOSFETs serial connecting were separated tested. Circuit simulations were also done to improve the experimental results.
The adder configuration was chosen to set up the prototype modulator for the adder topology had many advantages than the direct serial method. The adder transformers were designed and tested.
The modulator finally designed composed of three adder modules. The single pulse with shortest pulse width of 33.8ns, rise time of 13.9ns, amplitude of 2.2kV was obtained under charging voltage of 800V. Good experiment results were also got in multi pulses output mode.
完整的固体调制器由控制系统，辅助供电部分，开关主体和负载组成。控制系统采用单片机和CPLD为硬件核心，设计了宽度，频率，个数可调的脉冲信号发生器，作为固体调制器的触发信号源。其输出的最小脉宽为12.5ns，多个脉冲的一致性良好。触发信号源的输出采用光纤隔离电路，来增强其抗干扰能力。
根据功率MOSFET的工作原理，分别用分离元件和集成驱动芯片搭建了驱动电路。并且通过电路仿真结合实验结果，确定了驱动电路的主要参数，分析了电路中干扰的来源并给出改进的方案。驱动电路的供电采用可级联的DC／DC模块搭建。
在单个功率MOSFET开关的基础上，讨论了功率回路的选择和保护电路，并分别进行了6个MOSFET并联和4个MOSFET串联的实验，同样使用电路仿真找到对输出波形产生影响的主要参数，并且给出改进方案。
在详细比较直接串联和感应叠加两种产生高压的方法后，最后采用感应叠加的方式来设计调制器，叠加器的设计思路也被详细给出。
最终设计的调制器由3个开关模块叠加而成，在充电电压为800V时，可以得到最短脉宽为33.8ns，前沿为13.9ns，幅度为2.20kV的脉冲。多脉冲情况下也得到良好的脉冲一致性。
Solid state modulator with multi-pulse burst capability in mega Hertz, fast rise and fall times and width agility is the hotspot of pulse power technology. In this paper, the base principle and designing method of the solid state modulator based on power MOSFET devices are introduced. The prototype of the modulator is introduced and the experimental results are given.
The whole solid state modulator was composed of control system, power supply supplemental system, switch circuits, and the load. The kernel hardware of control system was composed of Micro Control Unit (MCU) and Complex Program Logic Device (CPLD). It could generate trigger signal with shortest pulse width of 12.5ns for the driver circuit of power MOSFET, and it also had good performance in multi pulses situation. Optical association circuits were used to protect the control system against the high voltage of the switch circuits.
Two types of driver circuits were designed according to the principle of power MOSFET. One was designed by separated components and the other was by integrated driver chip. Circuit simulations were used to help to analyze the experiment results. The reasons of cross talk in print circuit board were analyzed and improving ways were given. Power supply for driver circuits was designed by DC/DC modules which could work in series connection mode.
After the experiments of Single MOSFET switch, the switch with six MOSFETs parallel connecting and switch with four MOSFETs serial connecting were separated tested. Circuit simulations were also done to improve the experimental results.
The adder configuration was chosen to set up the prototype modulator for the adder topology had many advantages than the direct serial method. The adder transformers were designed and tested.
The modulator finally designed composed of three adder modules. The single pulse with shortest pulse width of 33.8ns, rise time of 13.9ns, amplitude of 2.2kV was obtained under charging voltage of 800V. Good experiment results were also got in multi pulses output mode.
引文
[1]．王莹，高功率脉冲电源[M]．北京：原子能出版社，1991
[2]. E. G. Cook, Review of Solid State Modulators. 20th International Linear Accelerator Conference, 2000, USA
[3]. G. J. Caporaso, Progress in Induction Linacs. 20th International Linear Accelerator Conference, 2000, USA
[4]．韩曼，脉冲功率技术基础[M]．北京：清华大学内部教材，2002
[5]. Carl Blake, Chris Bull, IGBT or MOSFET: Choose Wisely。 International Rectifier 1998。 http://www.irf.com
[6]. V. Barkhrdarian, Power MOSFET Basics. International Rectifier。 http://www.irf.com
[7]. F. J. Zutavern, G.M. Loubtiel, Alan Mar, Photoconductive Semiconductor Switch Technology for short pulse Electromagnetics and lasers. Pulsed Power Conference, 1999, USA
[8]. H. Kirbie, G. Caporaso, D. Goerz, et. al, MHz Repetition Rate Solid-state Driver for High Current Induction Accelerators. Particle Accelerator Conference, 1999, USA
[9]．田颖，陈培红，聂圣芳等，功率MOSFET驱动保护电路设计与应用。电力电子技术，2005 Vol．39 No．1
[10]. G. J. Caporaso, Progress in Induction LINACs. 20th International Linear Accelerator Conference, 2000, USA
[11]. George J, Gate Driver Design for Switch-mode Applications and the DE-Series MOSFET Transistor. http://www.directenergy.com, DEI Inc, 2001
[12]．张良，秦玲，刘承俊等。多通道可调脉宽脉冲发生器设计，电子技术应用，2007，5。
[13]．于开生，李东兵，用CPLD实现单片机读写模块．单片机与嵌入式系统应用，2003 No．1 P．131-134
[14]．陈志斌，卓家靖，基于单片机和CPLD的嵌入式脉冲发生器设计．微计算机信息，2005 No．2 P．107-108
[15]．任绪科，赵俊渭，周明，基于CPLD和单片机的任意波形发生器设计．电子产品世界，2005年01A期，P．118-119
[16]．苏娟，王华民，冷朝霞，高频MOSFET并联运行及驱动特性研究。西安理工大学学报，2003 Vol．19 No．04 P．352-355
[17]．张良，刘承俊，多个功率MOSFET器件并联的固体开关设计。第二届全国信息与电子工程学术交流会，2006，西昌
[18]. International Rectifier Inc, Paralleling HEXFET Power MOSFETs. International Rectifier Application Note, http://www.irf.com
[19]. Jingdong Chen, Scott Downer, Anthony Murray, et. al, Analysis of Avalanche Behavior for Paralleled MOSFETs. International Rectifier, 2004, http://www.irf.com
[20]. J. B. Forsythe, Paralleling Of Power MOSFETs for Higher Power Output. International Rectifier, www.irf.com
[21]. H. C. Kirbie, W. R. Cravey, S. A. Hawkins, et. al, A FET-switched Induction Accelerator Cell, Pulsed Power Conference, 1993, USA
[22]. V. Chitta, S. Hong, et al. Series Connection of IGBT's with Active Voltage Balancing. IEEE Transaction on Industry Application[C], Vol. 33, No. 4, July/August 1999, pp. 917-923
[23]. B. Hickman, E. Cook, Evaluation of MOSFETs and IGBTs for Pulsed Power Applications. Pulsed Power Conference, 2001, USA
[24]. Caseel R L, Delamare J E, Nguyen M N, et al. The Prototype Solid State Induction Modulator for SLAC NLC. Proceedings of the 2001 Particle Accelerator Conference. Vol.5. Chicago, USA, 2001: 3744-3746
[25]．张良，章林文，刘承俊等，基于MOSFET的固体调制器研究。电力电子技术应用，2007．5
[26]．甘孔银，绝缘栅双极晶体管固体开关技术研究．强激光与粒子束，2002；14(6)：954-956
[27]. Vogel V, Takata K, Chin Y H, et al. Solid-state Induction Modulator for JLC Project. Conference Record of KEK-SLAC ISG9 Meeting. Tukuba, Japan, 2002
[28]. E. J. Gower, J. S. Sullivan, Analog Amplitude Modulation Of A High Voltage, Solid State Inductive Adder, Pulse Generator Using MOSFETs. International Power Modulator Conference, 2002, USA
[29]. Marcel P J, Gaudreau J, Jeffrey A, et al. Solid-state Pulsed Power Systems for the Next Linear Collider. Proceedings of the 2003 Particle Accelerator Conference. Portland, USA, 2003: 547-549
[30]．甘孔银，汤宝寅，王浪平等，用于全方位离子注入的10kV固体脉冲调制器研制。中国表面工程，2003年 Vol．16 No．4 P．34-38
[31]. Kunio KOSEKI, K. Takayama, J. Kishiro, et. al, R&D Works on 1MHz Power Modulator for Induction Synchrotron. Particle Accelerator Conference, 2003
[32]. Kota Torikai, Yoshio Arakida, Shigemi Inagaki, et. al, Design Study Of 1mhz Induction Cavity For Induction Synchrotron. Particle Accelerator Conference, 2003
[33]．赵军平，章林文，李劲，基于MOSFET的高重复频率固体开关技术研究．强激光与粒子束，2004 Vol．16 No．11 P．1481-1484
[34]．尚雷 李为民 丛晓艳等，大功率固态脉冲调制器技术分析。高电压技术，2005，Vol．31 No．11，P．28-30
[35]．王相綦，何宁，冯德仁等，MOSFET调制器的实验研究，强激光与粒子束，2006，Vol．1 No．9 P．1569-1572。
[36]. Torikai, K. Arakida, Y. Nakamura, et. al, Induction System for a Proton Bunch Acceleration in Synchrotron。Particle Accelerator Conference, 2005.
[37]. Ken Takayama, K. Koseki, K.Torikail,et. al, Induction Acceleration Of A Single RF Bunch In The Kek Ps. Particle Accelerator Conference, 2005.
[38]. Yi Zhang, Snubber Considerations for IGTBT Applications. http://www.irf.com
[39]. G. J. Caporaso, Induction Linacs And Pulsed Power, Joint Topical course Frontiers of Accelerator Technology Praceedinge, 1994, USA
[40]. H. Kirbie, S. Hawkins, B. Hickman, et. al, Development of Solid-State Induction Modulators for High PRF Accelerators. Pulsed Power Conference, 1995, USA
[41]. H Kirbie, B Hickman, B Lee, et. al, An All Solid State Pulse Power Source for High PRF Induction Accelerators. Power Modulator Symposium, 1998, USA
[42]. H Kirbie, G Caporaso, D Goerz, et. al, MHz Repetition Rate Solid-state Driver for High Current Induction Accelerators. Particle Accelerator Conference, 1999, USA
[43]. W. J. DeHope, J. Chen, E. G. Cook, et. al, Recent Advances in Kicker Pulser Technology for Linear Induction Accelerators. Pulsed Power Conference, 1999, USA
[44]. E. G. Cook, B. S. Lee, S. A. Hawkins, et. al, Inductive Adder Kicker Modulator for DARHT-2, 20th International Linac Conference, 2000, USA
[45]. L. Wang, G. J. Caporaso, E. G. Cook, Modeling of an Inductive Adder Kicker Pulser for Darht-Ⅱ. LINAC, 2000, USA
[46]. J. A. Watson, E. G. Cook, Y. J. Chen, et. al, A Solid-state Modulator for High Speed Kickers. Particle Accelerator Conference, 2001. USA
[47]. L. Wang, G. L. Caporaso, E. G. Cook, Modeling of an Inductive Adder Kicker Pulser for A Proton Radiography System. International Pulsed Power Plasma Science Conference, 2001, USA
[48]. E. G. Cook, B. S. Lee, S. A. Hawkins, et. al, Solid-State Kicker Pulser for DARHT-2. IEEE International Pulsed Power Plasma Science Conference, 2001, USA
[49]. E. G. Cook, F. V. Allen, E. M. Anaya, et al. Solid-State Modulator R&D at LLNL. International Workshop on Recent Progress of Induction Accelerators Tsukuba, Japan, Oct 29-31, 2002。
[50]. E. G. Cook, B. C. Hickman, B. S. Lee, et. al, Design and Testing of a Fast, 50 kV Solid-state Kicker Pulser. International Power Modulator Conference, 2002, USA。
[51]. E. G. Cook, G. Akana, E. J. Gower, et. al, Solid-state Modulators For RF And Fast Kickers. Particle Accelerator Conference, 2005, USA
[52]. Agilent Technologies, Agilent HFBR-0400, HFBR-14xx and HFBR-24xx Series Low Cost, Miniature Fiber Optic Components with ST SMA, SC and FC Ports. Agilent Technologies, www. agilent. com
[53]．徐暄等，印刷线路板的电磁兼容问题[J]．电子工艺技术，2001；22(4)：147～149
[54]．Eric Bogatin著，李玉山，李丽平等译。信号完整性分析。电子工业出版社。2005-4-1。
[2]. E. G. Cook, Review of Solid State Modulators. 20th International Linear Accelerator Conference, 2000, USA
[3]. G. J. Caporaso, Progress in Induction Linacs. 20th International Linear Accelerator Conference, 2000, USA
[4]．韩曼，脉冲功率技术基础[M]．北京：清华大学内部教材，2002
[5]. Carl Blake, Chris Bull, IGBT or MOSFET: Choose Wisely。 International Rectifier 1998。 http://www.irf.com
[6]. V. Barkhrdarian, Power MOSFET Basics. International Rectifier。 http://www.irf.com
[7]. F. J. Zutavern, G.M. Loubtiel, Alan Mar, Photoconductive Semiconductor Switch Technology for short pulse Electromagnetics and lasers. Pulsed Power Conference, 1999, USA
[8]. H. Kirbie, G. Caporaso, D. Goerz, et. al, MHz Repetition Rate Solid-state Driver for High Current Induction Accelerators. Particle Accelerator Conference, 1999, USA
[9]．田颖，陈培红，聂圣芳等，功率MOSFET驱动保护电路设计与应用。电力电子技术，2005 Vol．39 No．1
[10]. G. J. Caporaso, Progress in Induction LINACs. 20th International Linear Accelerator Conference, 2000, USA
[11]. George J, Gate Driver Design for Switch-mode Applications and the DE-Series MOSFET Transistor. http://www.directenergy.com, DEI Inc, 2001
[12]．张良，秦玲，刘承俊等。多通道可调脉宽脉冲发生器设计，电子技术应用，2007，5。
[13]．于开生，李东兵，用CPLD实现单片机读写模块．单片机与嵌入式系统应用，2003 No．1 P．131-134
[14]．陈志斌，卓家靖，基于单片机和CPLD的嵌入式脉冲发生器设计．微计算机信息，2005 No．2 P．107-108
[15]．任绪科，赵俊渭，周明，基于CPLD和单片机的任意波形发生器设计．电子产品世界，2005年01A期，P．118-119
[16]．苏娟，王华民，冷朝霞，高频MOSFET并联运行及驱动特性研究。西安理工大学学报，2003 Vol．19 No．04 P．352-355
[17]．张良，刘承俊，多个功率MOSFET器件并联的固体开关设计。第二届全国信息与电子工程学术交流会，2006，西昌
[18]. International Rectifier Inc, Paralleling HEXFET Power MOSFETs. International Rectifier Application Note, http://www.irf.com
[19]. Jingdong Chen, Scott Downer, Anthony Murray, et. al, Analysis of Avalanche Behavior for Paralleled MOSFETs. International Rectifier, 2004, http://www.irf.com
[20]. J. B. Forsythe, Paralleling Of Power MOSFETs for Higher Power Output. International Rectifier, www.irf.com
[21]. H. C. Kirbie, W. R. Cravey, S. A. Hawkins, et. al, A FET-switched Induction Accelerator Cell, Pulsed Power Conference, 1993, USA
[22]. V. Chitta, S. Hong, et al. Series Connection of IGBT's with Active Voltage Balancing. IEEE Transaction on Industry Application[C], Vol. 33, No. 4, July/August 1999, pp. 917-923
[23]. B. Hickman, E. Cook, Evaluation of MOSFETs and IGBTs for Pulsed Power Applications. Pulsed Power Conference, 2001, USA
[24]. Caseel R L, Delamare J E, Nguyen M N, et al. The Prototype Solid State Induction Modulator for SLAC NLC. Proceedings of the 2001 Particle Accelerator Conference. Vol.5. Chicago, USA, 2001: 3744-3746
[25]．张良，章林文，刘承俊等，基于MOSFET的固体调制器研究。电力电子技术应用，2007．5
[26]．甘孔银，绝缘栅双极晶体管固体开关技术研究．强激光与粒子束，2002；14(6)：954-956
[27]. Vogel V, Takata K, Chin Y H, et al. Solid-state Induction Modulator for JLC Project. Conference Record of KEK-SLAC ISG9 Meeting. Tukuba, Japan, 2002
[28]. E. J. Gower, J. S. Sullivan, Analog Amplitude Modulation Of A High Voltage, Solid State Inductive Adder, Pulse Generator Using MOSFETs. International Power Modulator Conference, 2002, USA
[29]. Marcel P J, Gaudreau J, Jeffrey A, et al. Solid-state Pulsed Power Systems for the Next Linear Collider. Proceedings of the 2003 Particle Accelerator Conference. Portland, USA, 2003: 547-549
[30]．甘孔银，汤宝寅，王浪平等，用于全方位离子注入的10kV固体脉冲调制器研制。中国表面工程，2003年 Vol．16 No．4 P．34-38
[31]. Kunio KOSEKI, K. Takayama, J. Kishiro, et. al, R&D Works on 1MHz Power Modulator for Induction Synchrotron. Particle Accelerator Conference, 2003
[32]. Kota Torikai, Yoshio Arakida, Shigemi Inagaki, et. al, Design Study Of 1mhz Induction Cavity For Induction Synchrotron. Particle Accelerator Conference, 2003
[33]．赵军平，章林文，李劲，基于MOSFET的高重复频率固体开关技术研究．强激光与粒子束，2004 Vol．16 No．11 P．1481-1484
[34]．尚雷 李为民 丛晓艳等，大功率固态脉冲调制器技术分析。高电压技术，2005，Vol．31 No．11，P．28-30
[35]．王相綦，何宁，冯德仁等，MOSFET调制器的实验研究，强激光与粒子束，2006，Vol．1 No．9 P．1569-1572。
[36]. Torikai, K. Arakida, Y. Nakamura, et. al, Induction System for a Proton Bunch Acceleration in Synchrotron。Particle Accelerator Conference, 2005.
[37]. Ken Takayama, K. Koseki, K.Torikail,et. al, Induction Acceleration Of A Single RF Bunch In The Kek Ps. Particle Accelerator Conference, 2005.
[38]. Yi Zhang, Snubber Considerations for IGTBT Applications. http://www.irf.com
[39]. G. J. Caporaso, Induction Linacs And Pulsed Power, Joint Topical course Frontiers of Accelerator Technology Praceedinge, 1994, USA
[40]. H. Kirbie, S. Hawkins, B. Hickman, et. al, Development of Solid-State Induction Modulators for High PRF Accelerators. Pulsed Power Conference, 1995, USA
[41]. H Kirbie, B Hickman, B Lee, et. al, An All Solid State Pulse Power Source for High PRF Induction Accelerators. Power Modulator Symposium, 1998, USA
[42]. H Kirbie, G Caporaso, D Goerz, et. al, MHz Repetition Rate Solid-state Driver for High Current Induction Accelerators. Particle Accelerator Conference, 1999, USA
[43]. W. J. DeHope, J. Chen, E. G. Cook, et. al, Recent Advances in Kicker Pulser Technology for Linear Induction Accelerators. Pulsed Power Conference, 1999, USA
[44]. E. G. Cook, B. S. Lee, S. A. Hawkins, et. al, Inductive Adder Kicker Modulator for DARHT-2, 20th International Linac Conference, 2000, USA
[45]. L. Wang, G. J. Caporaso, E. G. Cook, Modeling of an Inductive Adder Kicker Pulser for Darht-Ⅱ. LINAC, 2000, USA
[46]. J. A. Watson, E. G. Cook, Y. J. Chen, et. al, A Solid-state Modulator for High Speed Kickers. Particle Accelerator Conference, 2001. USA
[47]. L. Wang, G. L. Caporaso, E. G. Cook, Modeling of an Inductive Adder Kicker Pulser for A Proton Radiography System. International Pulsed Power Plasma Science Conference, 2001, USA
[48]. E. G. Cook, B. S. Lee, S. A. Hawkins, et. al, Solid-State Kicker Pulser for DARHT-2. IEEE International Pulsed Power Plasma Science Conference, 2001, USA
[49]. E. G. Cook, F. V. Allen, E. M. Anaya, et al. Solid-State Modulator R&D at LLNL. International Workshop on Recent Progress of Induction Accelerators Tsukuba, Japan, Oct 29-31, 2002。
[50]. E. G. Cook, B. C. Hickman, B. S. Lee, et. al, Design and Testing of a Fast, 50 kV Solid-state Kicker Pulser. International Power Modulator Conference, 2002, USA。
[51]. E. G. Cook, G. Akana, E. J. Gower, et. al, Solid-state Modulators For RF And Fast Kickers. Particle Accelerator Conference, 2005, USA
[52]. Agilent Technologies, Agilent HFBR-0400, HFBR-14xx and HFBR-24xx Series Low Cost, Miniature Fiber Optic Components with ST SMA, SC and FC Ports. Agilent Technologies, www. agilent. com
[53]．徐暄等，印刷线路板的电磁兼容问题[J]．电子工艺技术，2001；22(4)：147～149
[54]．Eric Bogatin著，李玉山，李丽平等译。信号完整性分析。电子工业出版社。2005-4-1。