硅基微纳光电子器件的研究
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摘要
光电子器件是光纤通信的基础,是实现光纤通信的底层承载平台和核心技术所在。随着光纤通信技术的发展,小型化、智能化、低成本和高可靠性逐渐成为光纤通信系统的重要发展方向。硅基光电子技术,借助成熟的硅基加工工艺、廉价的材料成本、良好的光电混合集成特性,正逐步替代传统的基于Ⅲ-Ⅴ族材料光电子器件,适应光纤通信系统的发展需求。此外,硅基光电子器件与其他功能模块结合,实现高灵敏度、多功能、一体化的微纳光机电系统,被广泛应用于光纤通信领域之外的光学传感、军事侦查、空间探索等领域。因此,在硅基光电子器件方面的研究,对提高我国未来在光电子芯片产业的核心竞争力具有重要的意义。在此背景下,本论文着重研究了其中两类尺寸在微纳尺度的重要硅基光电子器件,提出并实现了三个新型硅基光电子器件的设计。
本文的主要内容如下：
第一部分,调研工作。首先,对目前硅基光电子器件的研究现状,进行了详细的调研工作,并对硅基光电子的发展方向、关键问题、研究思路做了相应的总结和探讨工作。然后,对硅基光电子的关键技术、关键器件进行了简要介绍。
第二部分,有关宽带MEMS可调谐激光器的设计、加工、封装和测试。针对目前设计中存在的外腔祸合效率低和组装复杂等问题,提出了一个基于抛物面镜的新型硅基MEMS可调谐激光器设计。通过在可调谐激光器的外腔内,利用被动耦合方式集成光纤柱形透镜和深硅刻蚀的抛物面镜两个二维的光约束器件,组合实现三维方向耦合,代替传统集成外来微透镜的方式,实现了真正的硅基单片集成。并利用现有的光学MEMS加工工艺,开发出了一套完整的MEMS可调谐激光器芯片的加工工艺流程,成功制作出了可以正常工作的芯片,并进行了外腔滤波、波长调节、耦合输出等相关测试。所得芯片的完整尺寸只有3mm×3.2mm,在保持边摸抑制比大于20dB的情况下,实现了48.3nm的波长调节范围。
第三部分,对基于NEMS技术的硅基光功率探测器的研究。在设计中,把光场梯度力引入NEMS和硅基光子学领域,利用光场梯度力作为光子能量与机械能之间的转换桥梁,并利用高精度的电子遂穿位移探测器进行位移探测,进而读出输入的光功率值。其设计不同于传统的基于光子吸收的探测原理,其意义在于成功克服了材料的限制,在硅基上实现了可以在C+L红外通信波段工作的光功率探测器件。在加工中,通过把硅基光子学工艺与NEMS工艺相结合,把响应光场梯度力的纳米悬臂梁和电子遂穿位移探测器集成在一起,加工出了尺寸仅有0.024mm2的高度集成硅基光功率探测芯片。测试结果表明,在不经过衰减器的条件下,NEMS光功率探测器的探测范围可以从0到20mW,波长响应范围超过100nm。
第四部分,有关NEMS硅基全光逻辑门的研究。结合日前有关光子机械耦合系统的研究热点,利用光子机械调制的原理,成功实现了硅基无源全光逻辑门器件。首次提出了双悬浮微环谐振腔的设计结构,通过悬浮微环结构的位置来控制输出信号光的强弱。利用NEMS加工工艺,成功制作出了尺寸仅有40μm×45μm(长×宽)大小的硅基光电子芯片。通过对器件的静态特性进行了实验测试,证明了实现逻辑NOR运算的可能性。这种新型的硅基全光逻辑门,其原理上区别于传统的基于SOA或者非线性光纤等有源器件的全光逻辑门,提供了一种尺寸更小、集成度更高、功耗更低的纯硅基全光逻辑运算解决方案。
Optoelectronics are one of the most important elements for fiber communication development, since they are the basic components and the core technology to construct the communication systems. With the rapid development of fiber communication technology, the communication systems require more and more smart devices with high integration density, low cost and high reliability. Silicon based optoelectronics are fabricated by using low-cost silicon material and mature CMOS fabrication technology with a good optoelectronic hybrid-integration ability, which are dominating in the optoelectronics industry and taking the place of the traditional optoelectronics fabricated on III-V materials. Moreover, the silicon optoelectronics are also important to design various micro-optic devices with multi-function by integrating with other components. And they also have become a thriving field known as optical micro-electro-mechanical system (MEMS) and nano-electro-mechanical system (NEMS), which provide wide applications in optical detection, military reconnaissance and space exploration. The researches on silicon optoelectronics are highly necessary to improve our country's competence in the field of optoelectronics technology. Therefore, this dissertation focuses on the silicon optoelectronics development and their applications by discussing and developing two kinds of typical silicon optoelectronics devices.
There are five chapters in this dissertation, and the main contents are as following.
In the first part, the development situation and achievements on silicon optoelectronics have been reviewed, in which the development tendency, the most common techniques and research methods have been summarized. This part is concluded by looking ahead the challenges as well as the crucial devices based on these technologies.
In the second part, a novel MEMS tunable laser have been designed, fabricated, packaged and tested. It is configured as the Littrow typed external cavity tunable laser with high output power and large tuning range. In its external cavity, a normal optical fiber acts as a rod-lens for light convergence in the vertical plane, while a deep-etched silicon parabolic mirror confines the light in the horizontal plane. Compare with previous designs, the proposed MEMS tunable laser is a real single-chip device without any external lenses. After solving the fabrication problems, such as release process, passive alignment, flip-chip gain chip bonding and roughness induced by deep-reactive-ion-etching (DRIE), we have successfully developed a process flow for MEMS tunable laser fabrication and packaging. The full-print chip size is only3mm×3.2mm, and its tuning range is tested up to48.3nm when the side-mode suppression ratio (SMSR) is higher than20dB.
In the third part, a silicon based miniature optical power detector is designed by using NEMS technology, in which optical gradient force is used to actuate a nano-scaled cantilever beam. The optical power is detected by an integrated a high sensitive electron-tunneling displacement transducer, in which optical gradient force is employed as the bridge between optical energy and mechanical energy transition. The working wavelength covers C&L-band which is a traditional detection region of III-V materials based devices by using photon absorption phenomenon. Moreover, the proposed optical power detector has advantages of small size (0.024mm2), large detection power range (0-20mW) and low thermal noise.
In the fourth part, a NEMS all-optical logic gate is developed. The NEMS all-optical logic gate is constructed by a pair of partially released micro-ring resonator in which the output optical signals are controlled by opto-mechanical effect. The suspended parts of the micro-ring resonators are driven by the optical gradient force between the suspended micro-ring resonator and the SiO2substrate. The device is fabricated by using NEMS technology and packaged by using laser welding technology. Compare with the traditional all-optical logic gates which are based on the semiconductor optical amplifier (SOA) or high nonlinear fibers, the proposed NEMS all-optical logic gate has the advantages of low power consumption (-0.5mW), high compact size (40μm×45μm), low cost and easy batch fabrication, which provides a potential application in silicon-photonic integration for digital signal processing.
本文的主要内容如下：
第一部分,调研工作。首先,对目前硅基光电子器件的研究现状,进行了详细的调研工作,并对硅基光电子的发展方向、关键问题、研究思路做了相应的总结和探讨工作。然后,对硅基光电子的关键技术、关键器件进行了简要介绍。
第二部分,有关宽带MEMS可调谐激光器的设计、加工、封装和测试。针对目前设计中存在的外腔祸合效率低和组装复杂等问题,提出了一个基于抛物面镜的新型硅基MEMS可调谐激光器设计。通过在可调谐激光器的外腔内,利用被动耦合方式集成光纤柱形透镜和深硅刻蚀的抛物面镜两个二维的光约束器件,组合实现三维方向耦合,代替传统集成外来微透镜的方式,实现了真正的硅基单片集成。并利用现有的光学MEMS加工工艺,开发出了一套完整的MEMS可调谐激光器芯片的加工工艺流程,成功制作出了可以正常工作的芯片,并进行了外腔滤波、波长调节、耦合输出等相关测试。所得芯片的完整尺寸只有3mm×3.2mm,在保持边摸抑制比大于20dB的情况下,实现了48.3nm的波长调节范围。
第三部分,对基于NEMS技术的硅基光功率探测器的研究。在设计中,把光场梯度力引入NEMS和硅基光子学领域,利用光场梯度力作为光子能量与机械能之间的转换桥梁,并利用高精度的电子遂穿位移探测器进行位移探测,进而读出输入的光功率值。其设计不同于传统的基于光子吸收的探测原理,其意义在于成功克服了材料的限制,在硅基上实现了可以在C+L红外通信波段工作的光功率探测器件。在加工中,通过把硅基光子学工艺与NEMS工艺相结合,把响应光场梯度力的纳米悬臂梁和电子遂穿位移探测器集成在一起,加工出了尺寸仅有0.024mm2的高度集成硅基光功率探测芯片。测试结果表明,在不经过衰减器的条件下,NEMS光功率探测器的探测范围可以从0到20mW,波长响应范围超过100nm。
第四部分,有关NEMS硅基全光逻辑门的研究。结合日前有关光子机械耦合系统的研究热点,利用光子机械调制的原理,成功实现了硅基无源全光逻辑门器件。首次提出了双悬浮微环谐振腔的设计结构,通过悬浮微环结构的位置来控制输出信号光的强弱。利用NEMS加工工艺,成功制作出了尺寸仅有40μm×45μm(长×宽)大小的硅基光电子芯片。通过对器件的静态特性进行了实验测试,证明了实现逻辑NOR运算的可能性。这种新型的硅基全光逻辑门,其原理上区别于传统的基于SOA或者非线性光纤等有源器件的全光逻辑门,提供了一种尺寸更小、集成度更高、功耗更低的纯硅基全光逻辑运算解决方案。
Optoelectronics are one of the most important elements for fiber communication development, since they are the basic components and the core technology to construct the communication systems. With the rapid development of fiber communication technology, the communication systems require more and more smart devices with high integration density, low cost and high reliability. Silicon based optoelectronics are fabricated by using low-cost silicon material and mature CMOS fabrication technology with a good optoelectronic hybrid-integration ability, which are dominating in the optoelectronics industry and taking the place of the traditional optoelectronics fabricated on III-V materials. Moreover, the silicon optoelectronics are also important to design various micro-optic devices with multi-function by integrating with other components. And they also have become a thriving field known as optical micro-electro-mechanical system (MEMS) and nano-electro-mechanical system (NEMS), which provide wide applications in optical detection, military reconnaissance and space exploration. The researches on silicon optoelectronics are highly necessary to improve our country's competence in the field of optoelectronics technology. Therefore, this dissertation focuses on the silicon optoelectronics development and their applications by discussing and developing two kinds of typical silicon optoelectronics devices.
There are five chapters in this dissertation, and the main contents are as following.
In the first part, the development situation and achievements on silicon optoelectronics have been reviewed, in which the development tendency, the most common techniques and research methods have been summarized. This part is concluded by looking ahead the challenges as well as the crucial devices based on these technologies.
In the second part, a novel MEMS tunable laser have been designed, fabricated, packaged and tested. It is configured as the Littrow typed external cavity tunable laser with high output power and large tuning range. In its external cavity, a normal optical fiber acts as a rod-lens for light convergence in the vertical plane, while a deep-etched silicon parabolic mirror confines the light in the horizontal plane. Compare with previous designs, the proposed MEMS tunable laser is a real single-chip device without any external lenses. After solving the fabrication problems, such as release process, passive alignment, flip-chip gain chip bonding and roughness induced by deep-reactive-ion-etching (DRIE), we have successfully developed a process flow for MEMS tunable laser fabrication and packaging. The full-print chip size is only3mm×3.2mm, and its tuning range is tested up to48.3nm when the side-mode suppression ratio (SMSR) is higher than20dB.
In the third part, a silicon based miniature optical power detector is designed by using NEMS technology, in which optical gradient force is used to actuate a nano-scaled cantilever beam. The optical power is detected by an integrated a high sensitive electron-tunneling displacement transducer, in which optical gradient force is employed as the bridge between optical energy and mechanical energy transition. The working wavelength covers C&L-band which is a traditional detection region of III-V materials based devices by using photon absorption phenomenon. Moreover, the proposed optical power detector has advantages of small size (0.024mm2), large detection power range (0-20mW) and low thermal noise.
In the fourth part, a NEMS all-optical logic gate is developed. The NEMS all-optical logic gate is constructed by a pair of partially released micro-ring resonator in which the output optical signals are controlled by opto-mechanical effect. The suspended parts of the micro-ring resonators are driven by the optical gradient force between the suspended micro-ring resonator and the SiO2substrate. The device is fabricated by using NEMS technology and packaged by using laser welding technology. Compare with the traditional all-optical logic gates which are based on the semiconductor optical amplifier (SOA) or high nonlinear fibers, the proposed NEMS all-optical logic gate has the advantages of low power consumption (-0.5mW), high compact size (40μm×45μm), low cost and easy batch fabrication, which provides a potential application in silicon-photonic integration for digital signal processing.
引文
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