长波长WDM解复用光接收集成器件及其微结构制备工艺的研究
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摘要
光波分复用技术是目前光纤通信系统能够满足通信带宽需求不断增长的支撑技术,近些年获得了人们的广泛研究。基于微结构的解复用光接收集成器件作为光波分复用系统中的关键器件,具有高速性能优越、集成度高以及信号探测能力强等优点,是近年来光纤通信迅速发展的重要保障。
本论文深入研究了用于波分复用系统的长波长解复用光接收集成器件及其微结构的制备工艺。通过大量的器件理论仿真与实验研究,取得的主要研究成果以及创新点如下：
1.对Si基多腔介质膜滤波器进行了深入的研究,在理论设计方面,对不同腔结构介质膜滤波器的透射谱进行了仿真,成功制备出具有平顶陡边光谱特性的多腔介质膜滤波器。该滤波器在1550nm处光谱透过率峰值达到75%,0.5dB带宽为0.48nm,3dB带宽为0.52nm,25dB带宽为0.87nm,可应用于100GHz通道间隔的波分复用系统。
2.利用苯并环丁烯树脂(BCB)研究了用于实现光电集成制备的BCB低温键合技术。在此基础上,提出了一种具有平顶陡边响应特性的Si基光接收集成器件。利用传输矩阵法对器件的光谱响应特性进行了仿真分析,并对器件结构进行了优化。基于BCB低温键合工艺实现了InP基PIN光探测器与Si基多腔介质膜滤波器的准单片集成,制备了具有平顶陡边响应特性的Si基长波长集成解复用光探测器。器件具有优异的平顶陡边响应特性,0.5dB响应带宽为0.43nm,3dB带宽为0.5nm,25dB带宽为1.06nm,同时,峰值量子效率达到55%,3dB响应带宽达到16GHz。
3.通过制备工艺的创新实现了可用于滤波腔的台阶梯微结构,以及可用于吸收腔的垂直楔形微结构和圆锥形微结构。利用湿法刻蚀工艺在Fabry-Perot滤波腔中实现了台阶梯的制备。利用动态掩膜技术在光探测器的吸收腔中制备了垂直楔形吸收腔结构,并在其基础上通过改进工艺,制备了锥形吸收腔结构。
4.实现了一种具有平顶陡边光谱响应特性的Si基长波长集成解复用光探测器。器件采用垂直楔形微结构的设计,实现了器件的高量子效率；采用多腔介质膜滤波器,实现了优良的平项陡边光谱响应特性。利用BCB低温键合工艺实现了Si基多腔介质膜滤波器与InP基垂直楔形吸收腔结构的键合。测试结果显示,器件的峰值量子效率达到了58.42%,器件的0.5dB带宽为0.52nm,3dB带宽为0.65nm,25dB带宽为0.95nm,通带平坦度小于0.55dB,可应用于波分复用系统。
5.提出并制备了基于锥形吸收腔的Si基长波长集成解复用光探测器。深入研究了圆锥形微结构的制备工艺,通过控制圆锥形结构形成层的厚度以及圆锥面掩膜的半径实现了对圆锥形结构底角的角度控制。利用BCB低温键合工艺实现了Si基多腔滤波器与InP基锥形吸收腔的键合。器件采用了多腔介质膜滤波器,实现了优良的平顶陡边光谱响应特性。此外,器件的圆锥形顶镜有效地将光波限制在吸收腔内,增加了光经过吸收层的次数,从而提高了量子效率。测试结果显示,器件的0.5dB带宽为0.5nm,3dB带宽为0.7nm,25dB带宽为1.06nm,并且器件峰值量子效率达到了60%,通带平坦度小于0.55dB,满足应用于100GHz通道间隔波分复用系统的要求。
6.成功制备了一种具有平顶陡边响应的单片集成光探测器。器件基于“InP基PIN+GaAs基Fabry-Perot滤波腔”的基本结构,利用湿法刻蚀工艺在Fabry-Perot滤波腔中制作了台阶梯微结构,并利用GaAs/InP大失配异质外延技术实现了器件的集成。器件采用了台阶型滤波腔结构,实现了平顶陡边光谱响应特性。测试结果表明：器件的峰值量子效率达到了26%,0.5dB光谱响应线宽为3.9nm,3dB光谱响应线宽为4.2nm,3dB响应带宽达到17GHz。
7.成功完成了对JGP450A9型磁控溅射系统软硬件升级的工作,实现了系统的全自动控制。
8.研究了Au薄膜厚度对GaAs纳米线生长的影响,通过控制Au薄膜镀膜时间发现,随着Au薄膜厚度的增大,GaAs纳米线的平均直径增大,生长速率随之降低。此外,研究了不同工作气压对金属电极镀膜工艺的影响,当工作气压为0.32Pa时,平均沉积速率达到最大值,金属电极薄膜的致密度达到最佳值。
With the increasing demand for the bandwidth of the communication, the wavelength-division multiplex (WDM) technology, which is the promising technology to meet the rapid development of the optical communication, has been extensively studied in recent years. Demultiplexing integrated photodetectors with micro-sturctures, as the key device of the WDM system, are the powerful guarantee for the rapid development of the optical communication technology because of the wavelength-selective detection, high-speed, and high compact.
In this dissertation, long-wavelength integrated photodetector and its micro-sturctures fabrication technologies for WDM demultiplexing receiving application were studied. Both theoretically and experimentally, the photodetectors with flat-top steep-edge spectral response were studied. The main contents and innovations are listed as follows.
1. The Si-based multi-cavity thin film filter was studied. On the theory design, the transmission spectrum of the filters based on different cavity structures were simulated. A novel thin film fiter with flat-top steep-edge spectral characteristics was fabricated successfully. The peak transmittance of75%around1550nm, the-0.5dB band of0.48nm, the3dB band of0.52nm, the25dB band of0.87nm are simultaneously obtained, which can be applied to100GHz channel spacing Wavelength Division Multiplexing systems.
2. The BCB low temperature bonding process has been studied. On this basis, a novel Si-based photodetector with good flat-top steep-edge spectral response was proposed. The structure of the photodetector is optimized by theoretical simulation. The photodetector is fabricated by bonding a Si-based multi-cavity F-P filter with an InP-based PIN absorbing structure. A peak quantum efficiency of55%around1550nm, the-0.5dB band of0.43nm,3dB band of0.5nm, the25dB band of1.06nm, and3-dB bandwidth more than16GHz, were simultaneously obtained.
3. The step micro-structure, the vertical taper micro-structure, the cone micro-structure were prepared by the innovation of the preparation process. The step micro-structure was realized in the Fabry-Perot filter by the wet etching technology. The vertical taper micro-structure was realized in the absorbing cavity of the photodetector by dynamic mask technology, and the cone micro-structure was realized by the improvation of the dynamic mask technology.
4. It's the first time that a Si-based RCE photodetector with flat-top steep-edge spectral response was fabricated. The photodetector is fabricated by bonding a Si-based multi-cavity F-P filter with an InP-based vertical taper absorbing structure. An integrated device with a peak quantum efficiency of58.42%around1550nm is obtained, which is realized by vertical taper micro-structure. In addition, this photodetector has good performance in the flat-top and steep-edge spectral response, which is realized by the multi-cavity filter. The spectral linewidth is less than0.65nm. The passband flatness is less than0.55dB. The-0.5dB band is0.52nm, and the25dB band is0.95nm.
5. A novel wavelength selective photodetector based on a conical absorbing structure has been proposed and fabricated. The preparation process of the cone mirror structure is studied. The base angle of the conical structures can be controlled by changing the depth of the conical forming layer and the radius of the conical mask layer. The top mirror of the absorption cavity was designed to be conical, which can increase the times of light reflection, so the quantum efficiency was improved. An integrated device with a peak quantum efficiency of58.42%around1550 nm is obtained. In addition, this photodetector has good performance in the flat-top and steep-edge spectral response, which is realized by the multi-cavity filter. The spectral linewidth is less than0.7nm. The passband flatness is less than0.55dB. The-0.5dB band is0.5nm, and the25dB band is1.06nm, which can be applied to100GHz channel spacing Wavelength Division Multiplexing systems.
6. A monolithically integrated tunable photodetector with flat-top steep-edge spectral response was fabricated. The photodetector is based on GaAs Fabry-Perot filter and an InP PIN. The step structure in the Fabry-Perot filter is realized by wet etching technique, and the high quliaty GaAs/InP heteroepitaxy is realized by employing a thin low temperature buffer layer. By employing a step structure in the filter, this photodetector with flat-top and steep-edge spectral response is fabricated. A peak quantum efficiency of25%around1550nm, the-0.5dB band of3.9nm,3dB band of4.2nm, and3dB bandwidth more than17GHz, were simultaneously obtained.
7. The upgrade of software and hardware for the JGP450A9magnectron sputtering system was finished, and the system can achieve fully automatic control.
8. The influence of the Au film thickness on the GaAs nanowire growth was studied. By prolonging the deposition time, the thickness of the Au thin film increased, the average diameter of the GaAs nanowires increased, and the growth rate decreased. And, the influence of the working gas pressure on the deposition rate in magnetron sputtering was studied. When the working pressure was0.32Pa, the average deposition rate reached the maximum value, and the best density of metal electrode films could be obtained.
本论文深入研究了用于波分复用系统的长波长解复用光接收集成器件及其微结构的制备工艺。通过大量的器件理论仿真与实验研究,取得的主要研究成果以及创新点如下：
1.对Si基多腔介质膜滤波器进行了深入的研究,在理论设计方面,对不同腔结构介质膜滤波器的透射谱进行了仿真,成功制备出具有平顶陡边光谱特性的多腔介质膜滤波器。该滤波器在1550nm处光谱透过率峰值达到75%,0.5dB带宽为0.48nm,3dB带宽为0.52nm,25dB带宽为0.87nm,可应用于100GHz通道间隔的波分复用系统。
2.利用苯并环丁烯树脂(BCB)研究了用于实现光电集成制备的BCB低温键合技术。在此基础上,提出了一种具有平顶陡边响应特性的Si基光接收集成器件。利用传输矩阵法对器件的光谱响应特性进行了仿真分析,并对器件结构进行了优化。基于BCB低温键合工艺实现了InP基PIN光探测器与Si基多腔介质膜滤波器的准单片集成,制备了具有平顶陡边响应特性的Si基长波长集成解复用光探测器。器件具有优异的平顶陡边响应特性,0.5dB响应带宽为0.43nm,3dB带宽为0.5nm,25dB带宽为1.06nm,同时,峰值量子效率达到55%,3dB响应带宽达到16GHz。
3.通过制备工艺的创新实现了可用于滤波腔的台阶梯微结构,以及可用于吸收腔的垂直楔形微结构和圆锥形微结构。利用湿法刻蚀工艺在Fabry-Perot滤波腔中实现了台阶梯的制备。利用动态掩膜技术在光探测器的吸收腔中制备了垂直楔形吸收腔结构,并在其基础上通过改进工艺,制备了锥形吸收腔结构。
4.实现了一种具有平顶陡边光谱响应特性的Si基长波长集成解复用光探测器。器件采用垂直楔形微结构的设计,实现了器件的高量子效率；采用多腔介质膜滤波器,实现了优良的平项陡边光谱响应特性。利用BCB低温键合工艺实现了Si基多腔介质膜滤波器与InP基垂直楔形吸收腔结构的键合。测试结果显示,器件的峰值量子效率达到了58.42%,器件的0.5dB带宽为0.52nm,3dB带宽为0.65nm,25dB带宽为0.95nm,通带平坦度小于0.55dB,可应用于波分复用系统。
5.提出并制备了基于锥形吸收腔的Si基长波长集成解复用光探测器。深入研究了圆锥形微结构的制备工艺,通过控制圆锥形结构形成层的厚度以及圆锥面掩膜的半径实现了对圆锥形结构底角的角度控制。利用BCB低温键合工艺实现了Si基多腔滤波器与InP基锥形吸收腔的键合。器件采用了多腔介质膜滤波器,实现了优良的平顶陡边光谱响应特性。此外,器件的圆锥形顶镜有效地将光波限制在吸收腔内,增加了光经过吸收层的次数,从而提高了量子效率。测试结果显示,器件的0.5dB带宽为0.5nm,3dB带宽为0.7nm,25dB带宽为1.06nm,并且器件峰值量子效率达到了60%,通带平坦度小于0.55dB,满足应用于100GHz通道间隔波分复用系统的要求。
6.成功制备了一种具有平顶陡边响应的单片集成光探测器。器件基于“InP基PIN+GaAs基Fabry-Perot滤波腔”的基本结构,利用湿法刻蚀工艺在Fabry-Perot滤波腔中制作了台阶梯微结构,并利用GaAs/InP大失配异质外延技术实现了器件的集成。器件采用了台阶型滤波腔结构,实现了平顶陡边光谱响应特性。测试结果表明：器件的峰值量子效率达到了26%,0.5dB光谱响应线宽为3.9nm,3dB光谱响应线宽为4.2nm,3dB响应带宽达到17GHz。
7.成功完成了对JGP450A9型磁控溅射系统软硬件升级的工作,实现了系统的全自动控制。
8.研究了Au薄膜厚度对GaAs纳米线生长的影响,通过控制Au薄膜镀膜时间发现,随着Au薄膜厚度的增大,GaAs纳米线的平均直径增大,生长速率随之降低。此外,研究了不同工作气压对金属电极镀膜工艺的影响,当工作气压为0.32Pa时,平均沉积速率达到最大值,金属电极薄膜的致密度达到最佳值。
With the increasing demand for the bandwidth of the communication, the wavelength-division multiplex (WDM) technology, which is the promising technology to meet the rapid development of the optical communication, has been extensively studied in recent years. Demultiplexing integrated photodetectors with micro-sturctures, as the key device of the WDM system, are the powerful guarantee for the rapid development of the optical communication technology because of the wavelength-selective detection, high-speed, and high compact.
In this dissertation, long-wavelength integrated photodetector and its micro-sturctures fabrication technologies for WDM demultiplexing receiving application were studied. Both theoretically and experimentally, the photodetectors with flat-top steep-edge spectral response were studied. The main contents and innovations are listed as follows.
1. The Si-based multi-cavity thin film filter was studied. On the theory design, the transmission spectrum of the filters based on different cavity structures were simulated. A novel thin film fiter with flat-top steep-edge spectral characteristics was fabricated successfully. The peak transmittance of75%around1550nm, the-0.5dB band of0.48nm, the3dB band of0.52nm, the25dB band of0.87nm are simultaneously obtained, which can be applied to100GHz channel spacing Wavelength Division Multiplexing systems.
2. The BCB low temperature bonding process has been studied. On this basis, a novel Si-based photodetector with good flat-top steep-edge spectral response was proposed. The structure of the photodetector is optimized by theoretical simulation. The photodetector is fabricated by bonding a Si-based multi-cavity F-P filter with an InP-based PIN absorbing structure. A peak quantum efficiency of55%around1550nm, the-0.5dB band of0.43nm,3dB band of0.5nm, the25dB band of1.06nm, and3-dB bandwidth more than16GHz, were simultaneously obtained.
3. The step micro-structure, the vertical taper micro-structure, the cone micro-structure were prepared by the innovation of the preparation process. The step micro-structure was realized in the Fabry-Perot filter by the wet etching technology. The vertical taper micro-structure was realized in the absorbing cavity of the photodetector by dynamic mask technology, and the cone micro-structure was realized by the improvation of the dynamic mask technology.
4. It's the first time that a Si-based RCE photodetector with flat-top steep-edge spectral response was fabricated. The photodetector is fabricated by bonding a Si-based multi-cavity F-P filter with an InP-based vertical taper absorbing structure. An integrated device with a peak quantum efficiency of58.42%around1550nm is obtained, which is realized by vertical taper micro-structure. In addition, this photodetector has good performance in the flat-top and steep-edge spectral response, which is realized by the multi-cavity filter. The spectral linewidth is less than0.65nm. The passband flatness is less than0.55dB. The-0.5dB band is0.52nm, and the25dB band is0.95nm.
5. A novel wavelength selective photodetector based on a conical absorbing structure has been proposed and fabricated. The preparation process of the cone mirror structure is studied. The base angle of the conical structures can be controlled by changing the depth of the conical forming layer and the radius of the conical mask layer. The top mirror of the absorption cavity was designed to be conical, which can increase the times of light reflection, so the quantum efficiency was improved. An integrated device with a peak quantum efficiency of58.42%around1550 nm is obtained. In addition, this photodetector has good performance in the flat-top and steep-edge spectral response, which is realized by the multi-cavity filter. The spectral linewidth is less than0.7nm. The passband flatness is less than0.55dB. The-0.5dB band is0.5nm, and the25dB band is1.06nm, which can be applied to100GHz channel spacing Wavelength Division Multiplexing systems.
6. A monolithically integrated tunable photodetector with flat-top steep-edge spectral response was fabricated. The photodetector is based on GaAs Fabry-Perot filter and an InP PIN. The step structure in the Fabry-Perot filter is realized by wet etching technique, and the high quliaty GaAs/InP heteroepitaxy is realized by employing a thin low temperature buffer layer. By employing a step structure in the filter, this photodetector with flat-top and steep-edge spectral response is fabricated. A peak quantum efficiency of25%around1550nm, the-0.5dB band of3.9nm,3dB band of4.2nm, and3dB bandwidth more than17GHz, were simultaneously obtained.
7. The upgrade of software and hardware for the JGP450A9magnectron sputtering system was finished, and the system can achieve fully automatic control.
8. The influence of the Au film thickness on the GaAs nanowire growth was studied. By prolonging the deposition time, the thickness of the Au thin film increased, the average diameter of the GaAs nanowires increased, and the growth rate decreased. And, the influence of the working gas pressure on the deposition rate in magnetron sputtering was studied. When the working pressure was0.32Pa, the average deposition rate reached the maximum value, and the best density of metal electrode films could be obtained.
引文
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[1]Hayashi I. "Heterostruture lasers", IEEE Transactions on Electron Devices,31(11), 1984,pp.1630-1642.
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