摘要
全固化飞秒激光器是超短脉冲激光器中一个新颖的研究方向,它体积小、成
本低、波长多样化,是未来超短脉冲激光器发展的必然趋势,本文对全固化Yb:YAG
锁模激光器进行了理论和实验研究,论文工作的主要内容包括以下几个方面:
? . 综述了全固化激光器的基本特点、发展历史和现状。并简单介绍了
半导体激光器的耦合方式;阐述并分析了飞秒激光器及全固化飞秒
激光器的发展状况及应用。
? . 对实验所需解决的理论问题进行了研究。建立了基于 Yb:YAG 晶体
的准四能级速率方程并对 Yb:YAG 激光器的阈值和输入-输出特性
进行了分析。进行了谐振腔设计并对锁模机制进行了初步研究。
? . 简单介绍了半导体可饱和吸收镜(SESAM),对三种被动锁模理论模
型进行了讨论。并对稳定 CW 锁模的条件进行了分析。
? . 提出了切实可行的色散补偿方案。在理论上推导了用于超短脉冲色
散补偿的棱镜对的负 GDD 和玻璃材料引入的正 GVD。在理论推导的
基础上对实验中所需的棱镜对进行了具体的设计。
? . 将 Yb:YAG 锁模激光器的实验研究进行了介绍,介绍并简单分析了
实验现象,最后给出了实验结果。详细描述了实验所用到的几种
SESAM 的结构。实现了稳定的 CW 锁模,锁模脉冲宽度 4ps,锁模平
均功率 200mW。
? . 在论文的最后一章里,我们对论文工作进行了总结;根据实验取得
的成果对这个课题的前景进行了展望。
In this thesis, theoretical and experimental studies about all-solid-state Yb:YAG
mode-locked laser was presented. The main contents are as follows:
1. The development and application of all-solid-state lasers and femtosecond
lasers are introduced. A brief introduce on the collimation and focus
system of diode lasers was presented.
2. The theoretical problems that needed in the experiment were studied.
From the theory of rate equations, the dynamic behaviors of
diode-pumped quasi-four-level Yb:YAG laser were investigated, which
would be the theoretical groundwork for all-solid-state femtosecond
Yb:YAG lasers. In this chapter, the cavity of the laser and mode-lock
mechanism were studied.
3. A brief introduce of semiconductor saturable absorber mirror (SESAM)
was presented. The three theoretical models ofpassive mode-locking were
discussed. The condition for stable mode-locking with a SESAM was
analysed.
4. A feasible dispersion compensation scheme was designed. The negative
GDD created by prism pair and the positive GVD induced by prism
material were theoretically derived. Based on the theoretically formulas,
real prism pair needed in our experiment was designed.
5. The experimental studies of Yb:YAG laser was introduced, and the
phenomena and results of the experiment were presented. The SESAMs’
used in our laser were detailedly introduced. Stable CW mode-locking
was obtained. The laser generates as much as 200mW average power at
1047nm in trains of 4 picoseconds pulses with repetitionrate 200MHz.
6. In the last chapter, a summarization and a prospect of our work were
presented.
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