800MHz CDMA双向塔顶放大器的设计与实现
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摘要
双向塔顶放大器能实现上下行信号覆盖范围同时增大,是为解决移动通信系统边缘区域覆盖而设计的全新的基站延伸覆盖和网络优化设备,必然成为3G网络的基本配置。
本文以800MHz CDMA双向塔顶放大器的实际应用为背景,研究了双向塔顶放大器的结构与其在无线网络优化中的作用,并且重点研究了接收机前端基于E-PHEMT(增强模式伪形态高电子迁移率晶体管)的低噪声放大器的设计以及双向塔顶放大器实时数据的采集和控制系统的设计。
针对低噪声放大器实际工程中噪声、线性和匹配等性能要求,通过使用射频电路CAD软件先进设计系统(ADS)进行完整的分析与仿真,设计并实现了平衡结构、增益可调、噪声系数低、高线性度和可靠性高的低噪声放大器。
采用自带模数转换功能的AVR单片机实现实时数据采集和控制系统的设计,完成了所选单片机外围硬件电路和采样电路的设计以及编程实现。为了用户直观简便地监控系统,利用Microsoft Visual Basic(VB)工具设计了可视化控制界面,与单片机系统通过RS-232串口进行通信,完成了系统参数设置、实时参数显示和报警指示功能。
Dual Channel Booster can enlarge the coverage range of both uplink and downlink signals simultaneously, and it is a new kind of network optimization equipment for solving the problem of margin area coverage of mobile communication system. It must be an elementary configuration of 3G network.
With the purpose of practical application of 800MHz CDMA dual channel booster, this thesis expounds the structure of the booster and its effect in wireless network optimization. Also, we focus on the design of low noise amplifier based on E-PEMT in the forepart of the receiver and the design of real-time information
sampling and control system. According to the demand of noise, linearity and impedance matching in the design process, it is used the radio-frequency circuit CAD software named Advanced Design System for complete analysis, and we design a reliable low noise amplifier, which has balance structure, adjustable gain, low noise figure and high linearity.
It is used the AVR microchip ATmega8 to design the real-time information sampling and control system, and we has completed the hardware design including peripheral configuration and sampling circuit and program design. In order to monitor the system directly and simply, it is used Microsoft Visual Basic tools to design a visual control interface communicating with microchip system through RS-232 port, and it implements three functions including parameter setup, real-time information display and alarm indication.
本文以800MHz CDMA双向塔顶放大器的实际应用为背景,研究了双向塔顶放大器的结构与其在无线网络优化中的作用,并且重点研究了接收机前端基于E-PHEMT(增强模式伪形态高电子迁移率晶体管)的低噪声放大器的设计以及双向塔顶放大器实时数据的采集和控制系统的设计。
针对低噪声放大器实际工程中噪声、线性和匹配等性能要求,通过使用射频电路CAD软件先进设计系统(ADS)进行完整的分析与仿真,设计并实现了平衡结构、增益可调、噪声系数低、高线性度和可靠性高的低噪声放大器。
采用自带模数转换功能的AVR单片机实现实时数据采集和控制系统的设计,完成了所选单片机外围硬件电路和采样电路的设计以及编程实现。为了用户直观简便地监控系统,利用Microsoft Visual Basic(VB)工具设计了可视化控制界面,与单片机系统通过RS-232串口进行通信,完成了系统参数设置、实时参数显示和报警指示功能。
Dual Channel Booster can enlarge the coverage range of both uplink and downlink signals simultaneously, and it is a new kind of network optimization equipment for solving the problem of margin area coverage of mobile communication system. It must be an elementary configuration of 3G network.
With the purpose of practical application of 800MHz CDMA dual channel booster, this thesis expounds the structure of the booster and its effect in wireless network optimization. Also, we focus on the design of low noise amplifier based on E-PEMT in the forepart of the receiver and the design of real-time information
sampling and control system. According to the demand of noise, linearity and impedance matching in the design process, it is used the radio-frequency circuit CAD software named Advanced Design System for complete analysis, and we design a reliable low noise amplifier, which has balance structure, adjustable gain, low noise figure and high linearity.
It is used the AVR microchip ATmega8 to design the real-time information sampling and control system, and we has completed the hardware design including peripheral configuration and sampling circuit and program design. In order to monitor the system directly and simply, it is used Microsoft Visual Basic tools to design a visual control interface communicating with microchip system through RS-232 port, and it implements three functions including parameter setup, real-time information display and alarm indication.
引文
[1] Reinhold Ludwig. RF Circuit Design: Theory and Applications. 北京. 电子工业出版社. 2002.
[2] 陈邦媛. 射频通信电路. 北京. 科学出版社. 2002.
[3] Paul R.Gray, Robert G.Meyer. Analysis and Design of Analog Integrated Circuit. Chapter 11.Wiley. 1993.
[4] Robert G.Meyer, William D.Mack. “A 1GHz BiCMOS RF Front-End IC”. IEEE J.Solid-state Circuit, vol.29,pp.350-335. 1994.
[5] Derek K.Shaeffer and Thomas H.Lee. “A 1.5V 1.5GHz CMOS Low Noise Amplifier”. IEEE J.Solid-State Circuit,vol.32,pp.745-759. 1997.
[6] Yannis E.Papananos. Radio-Frequency Microelectronic Circuits for Telecommunication Applications. Chapter1,2,5. Kluwer. 1999.
[7] Data Sheet. Agilent ATF-54143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package. Agilent Technologies, Inc. 2003.
[8] Inder Bahl. Lumped Elements for RF and Microwave Circuits. Artech House. 2003. Chapter 13.
[9] Inder Bahl, Prakash Bhartia, Microwave Solid State Circuit Design, John Wiley & Sons, 1988, Chapter 7.
[10] J. Engberg and T. Larsen, Noise Theory of Linear and Nonlinear Circuits, John Wiley & Sons, 1995, Chapter 6.
[11] Stephen A. Maas, Nonlinear microwave and RF circuits, Artech House, 2003, Chapter 5.
[12] Inder Bahl, Lumped Elements for RF and Microwave Circuits, Artech House, 2003, Chapter 13.
[13] Smith, J., Modern Communication Circuits, McGraw-Hill, 1986, chapter 5 subtopic: Lossless feedback amplifiers.
[14] Henkes, D., “LNA Design Uses Series Feedback to Achieve Simultaneous Low Input VSWR and Low Noise”, Applied Microwave & Wireless, October, 1998.
[15] Application Note 1299, “A Low Noise High Intercept Point Amplifier for 900MHz Applications using the Agilent ATF-54143 PHEMT.” Agilent Technology Homepage.
[16] Application Note 1222, “High Intercept Low Noise Amplifier for the 1850-1910MHz PCS Band using the Agilent ATF-54143 E-PHEMT.” Agilent Technology Homepage.
[17] Application Note 1265, “Amplifier Design Guide.”Agilent Technology Homepage. May,2003.
[18] W. R. Curtice, “A MESFET Model for Use in the Design of GaAs Integrated Circuits”, IEEE Trans Microwave Theory Tech, vol. MTT-28, pp. 448-456, May 1980.
[19] Applications Bulletin 107. “Agilent 5X143C/5X143A Demo Boards for ATF-5X143 Series Agilent PHEMT Devices.” Agilent Technology Homepage.
[20] Technical Data. “Surface PIN Diodes.” HEWLETT PACKARD.
[21] 马潮等. ATmega8 原理及应用手册. 北京. 清华大学出版社. 2003.
[22] 沈文等. AVR 单片机 C 语言开发入门指导. 北京. 清华大学出版社. 2003.
[23] 许浩等. Visual Basic 串口通信工程开发实例导航. 北京. 人民邮电出版社. 2003.
[24] 李罡.Visual Basic5.0 编程实例详解.北京. 电子工业出版社,1998.
[2] 陈邦媛. 射频通信电路. 北京. 科学出版社. 2002.
[3] Paul R.Gray, Robert G.Meyer. Analysis and Design of Analog Integrated Circuit. Chapter 11.Wiley. 1993.
[4] Robert G.Meyer, William D.Mack. “A 1GHz BiCMOS RF Front-End IC”. IEEE J.Solid-state Circuit, vol.29,pp.350-335. 1994.
[5] Derek K.Shaeffer and Thomas H.Lee. “A 1.5V 1.5GHz CMOS Low Noise Amplifier”. IEEE J.Solid-State Circuit,vol.32,pp.745-759. 1997.
[6] Yannis E.Papananos. Radio-Frequency Microelectronic Circuits for Telecommunication Applications. Chapter1,2,5. Kluwer. 1999.
[7] Data Sheet. Agilent ATF-54143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package. Agilent Technologies, Inc. 2003.
[8] Inder Bahl. Lumped Elements for RF and Microwave Circuits. Artech House. 2003. Chapter 13.
[9] Inder Bahl, Prakash Bhartia, Microwave Solid State Circuit Design, John Wiley & Sons, 1988, Chapter 7.
[10] J. Engberg and T. Larsen, Noise Theory of Linear and Nonlinear Circuits, John Wiley & Sons, 1995, Chapter 6.
[11] Stephen A. Maas, Nonlinear microwave and RF circuits, Artech House, 2003, Chapter 5.
[12] Inder Bahl, Lumped Elements for RF and Microwave Circuits, Artech House, 2003, Chapter 13.
[13] Smith, J., Modern Communication Circuits, McGraw-Hill, 1986, chapter 5 subtopic: Lossless feedback amplifiers.
[14] Henkes, D., “LNA Design Uses Series Feedback to Achieve Simultaneous Low Input VSWR and Low Noise”, Applied Microwave & Wireless, October, 1998.
[15] Application Note 1299, “A Low Noise High Intercept Point Amplifier for 900MHz Applications using the Agilent ATF-54143 PHEMT.” Agilent Technology Homepage.
[16] Application Note 1222, “High Intercept Low Noise Amplifier for the 1850-1910MHz PCS Band using the Agilent ATF-54143 E-PHEMT.” Agilent Technology Homepage.
[17] Application Note 1265, “Amplifier Design Guide.”Agilent Technology Homepage. May,2003.
[18] W. R. Curtice, “A MESFET Model for Use in the Design of GaAs Integrated Circuits”, IEEE Trans Microwave Theory Tech, vol. MTT-28, pp. 448-456, May 1980.
[19] Applications Bulletin 107. “Agilent 5X143C/5X143A Demo Boards for ATF-5X143 Series Agilent PHEMT Devices.” Agilent Technology Homepage.
[20] Technical Data. “Surface PIN Diodes.” HEWLETT PACKARD.
[21] 马潮等. ATmega8 原理及应用手册. 北京. 清华大学出版社. 2003.
[22] 沈文等. AVR 单片机 C 语言开发入门指导. 北京. 清华大学出版社. 2003.
[23] 许浩等. Visual Basic 串口通信工程开发实例导航. 北京. 人民邮电出版社. 2003.
[24] 李罡.Visual Basic5.0 编程实例详解.北京. 电子工业出版社,1998.