多晶硅高温压力传感器设计
摘要
本论文的研究属于电气工业控制用微电子控制元件压力传感器制造技术领域。内容分为三个部分：第一部分为绪论，对高温压力传感器制造技术的发展进行综述，将该技术领域近十几年的主要研究成果归纳为四类，分析了各自的特点和发展趋势。第二部分为多晶硅高温压力传感器设计技术的研究。第三部分给出了研制结果。
在第二部分首先讨论了多晶硅压力传感器相关基础理论，分析了多晶硅的压阻效应和各种力学结构敏感膜片的应力变化对传感器输出灵敏度的影响，针对多晶硅薄膜只能利用纵向应变的特点，为提高灵敏度，将微压传感器的设计思路应用于设计中，提出了一种新型敏感膜片结构——双硬心纵向应变力学结构传感器设计方案。在理论分析的基础上，详细介绍了每个参数的设计过程，设计了传感器芯片光刻版图。并根据实际工艺条件和实践经验，提出了一套完整的制造工艺方案。在设计中尽可能采用先进的加工工艺，并对关键制造工艺之一的微机械加工工艺做了重大的调整和改进，在各向异性腐蚀中，用LPCVD生长的Si_3N_4薄膜替代传统的SiO_2掩膜，保证了产品的性能达到预期指标。
初样测试结果表明，在1mA恒流源激励下，传感器芯片的灵敏度达到70mV／100Kpa以上，线性度优于0.10％FS，高于矩形膜片的灵敏度输出，并且具有10倍以上的过载保护功能，从而证明了设计思路是正确的，工艺设计是合理可行的。
The study presented in this thesis is on manufaching technology of pressure sensors for electrical control. The thesis consists of three parts.Part One (introduction to Chapter 1)gives an overall review on the research and development in the related fields.Part Two (Chapter 2) focuses on the sdudy of a design technique for high-temperature polysilicon pressure sensors. Part Three (conclusion)discuss the result of measurement of sensors.
In part Two,firstly, the principles of polysilicon pressure sensors are discussed .Analysis was made what the affect to the sensitivity of sensors with the piezoresistive effect of polysilicon and the stress of mechanical structures of sensing diaphragms. For improve the sensitivity of sensors, A novel diaphragm structure with double-bossed and the longitudinal piezoresistance coefficients of polysilicon is discovered .Secondly the procedure of parameters design are described detailly. Based on,the photosensitive masks of sensor chip are designed. In the project ,take the Si3N4 film of LPCVD instead of Si02 in the anisotropic etching technology .which ensured the performance of sensors to meet the needs of applications for electrical controls.
The devices are fabricated by IC processes and the MEMS technology,the sensitivity of the sensors is measured to be 70mV/100Kpa under a driving of lmAdc,the linearity best then 0.10%FS. The overload capability over 10 times. The results proved the design project is advanced.
在第二部分首先讨论了多晶硅压力传感器相关基础理论，分析了多晶硅的压阻效应和各种力学结构敏感膜片的应力变化对传感器输出灵敏度的影响，针对多晶硅薄膜只能利用纵向应变的特点，为提高灵敏度，将微压传感器的设计思路应用于设计中，提出了一种新型敏感膜片结构——双硬心纵向应变力学结构传感器设计方案。在理论分析的基础上，详细介绍了每个参数的设计过程，设计了传感器芯片光刻版图。并根据实际工艺条件和实践经验，提出了一套完整的制造工艺方案。在设计中尽可能采用先进的加工工艺，并对关键制造工艺之一的微机械加工工艺做了重大的调整和改进，在各向异性腐蚀中，用LPCVD生长的Si_3N_4薄膜替代传统的SiO_2掩膜，保证了产品的性能达到预期指标。
初样测试结果表明，在1mA恒流源激励下，传感器芯片的灵敏度达到70mV／100Kpa以上，线性度优于0.10％FS，高于矩形膜片的灵敏度输出，并且具有10倍以上的过载保护功能，从而证明了设计思路是正确的，工艺设计是合理可行的。
The study presented in this thesis is on manufaching technology of pressure sensors for electrical control. The thesis consists of three parts.Part One (introduction to Chapter 1)gives an overall review on the research and development in the related fields.Part Two (Chapter 2) focuses on the sdudy of a design technique for high-temperature polysilicon pressure sensors. Part Three (conclusion)discuss the result of measurement of sensors.
In part Two,firstly, the principles of polysilicon pressure sensors are discussed .Analysis was made what the affect to the sensitivity of sensors with the piezoresistive effect of polysilicon and the stress of mechanical structures of sensing diaphragms. For improve the sensitivity of sensors, A novel diaphragm structure with double-bossed and the longitudinal piezoresistance coefficients of polysilicon is discovered .Secondly the procedure of parameters design are described detailly. Based on,the photosensitive masks of sensor chip are designed. In the project ,take the Si3N4 film of LPCVD instead of Si02 in the anisotropic etching technology .which ensured the performance of sensors to meet the needs of applications for electrical controls.
The devices are fabricated by IC processes and the MEMS technology,the sensitivity of the sensors is measured to be 70mV/100Kpa under a driving of lmAdc,the linearity best then 0.10%FS. The overload capability over 10 times. The results proved the design project is advanced.
引文
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[3] 陈中佛主编．电子工业生产技术手册—半导体与集成电路．卷7．北京：国防工业出版社．1991年．109页
[4] B.DIEM, R.TUUCHE. SIMOX (Separation by Ion Implantation of Oxygen):a Technology for Higy-temperature Silicon Sensor. Sensor and Actuators,. A21-A23 (1990). 1003-1006p
[5] J.Boussey-Said and N.Guillemot. Oxidation Stacking Faults in SIMOX and Silicon -on-InsulatorStructures Obtained by Wafer-Bonding. J.Electrochem. Soc.,Vol.140,No.2.February(1993). 544-548p
[6] 焦继伟，陆德仁等．外加电压下低温SDB技术研究．北京：STC’93．576页
[7] 孔德义，虞承端．硅片直接键合(SDB)技术中预键合的研究与实验．北京：STC’93．580页
[8] 朱作云，李跃进等．SiC薄膜高温压力传感器．传感器技术．2001年第20卷第2期．1．3页
[9] Robert OkojieS. Operation of 6H-SiC pressure sensor at 500℃. Sensor and Actuators. A 1998. 66(3). 200-204p
[10] 蔡浩一．多晶SiC薄膜的生长及其压阻特性．传感器技术．1995年第4期．7．9页
[11] 王阳元，T．I．卡明斯．多晶硅薄膜及其在集成电路中的应用．北京：科学出版社．1988．
[12] P.Kopystynski and E,Obermeier. The Wide-ranging Application of Polysilicon Layers in Solid-State Sensors. Sensors and Actuators. 17(1989). 69-73页
[13] FarrokhAyazi, Khalil Najafi. A HARPSS Polysilicon Vibration Ring Gyroscope. J.Microelectromechnical systems. Vol.10, No.2, June 2001. 169-179p
[14] Angela D.McConnell, Srinivasan Uma. Thermal Conductivity of Doped Polysilicon Layers. J.Microelectromechnical systems. Vol.10, No.3, September 2001. 360-369p
[15] Farrokh Ayazi, Khalil Najafi. High aspect-ratio polysilicon micromachining technology. Sensors and Actuators. 87(2000). 46-51p
[16] Xin Zhang, Tong-Yi Zhang. Residual-stress relaxation in polysilicon thin films by higy-temperature rapid thermal annerling. Sensors and Actuators. A64 (1998). 109-115p
[17] 王善慈．多晶硅敏感技术．传感器技术．1994年．第5期．55页
[18] H.SCHAFER. Temperature-Independent Pressure Sensors Using Polycrystalling Silicon Strain Gauges.. Sensors and Actuators. 17(1989). 521-527p
[19] 朱秀云，侯曾煜等．高性能多晶硅压力传感器的研制．传感技术学报．1993年(1)．1页
[20] 刘晓为，张国威等．传感器技术．1990．(5)34页
[21] 徐淑霞，庞世信等．用微机械加工工艺精密腐蚀硅膜片．大连：第五届全国敏感元件与传感器学术会议论文集．1997．9．50页
[22] 刘广玉，陈明等．新型传感器技术及应用．第一版．北京：北京航空航天大学出版社．1995年．1页
[23] 牛德芳等．力学量敏感器件及其应用．第一版．北京：科学出版社．1987．32页
[24] V.Mosser et al. Sensors and Actuators A,1991,28.113p
[25] 王善慈．传感器技术．1994．(6)：1页
[26] 赵甘明，鲍敏杭．多晶硅横向压阻灵敏度的统计分析．传感技术学报．1989．(2)1页
[27] M.Bao,L.Yu.Y.Wang. Micromechanicl Beam-diaphragm structure improves
performances of pressure transducers. Sensors and Actuators. A21-23(1990). 137-141p
[28] S.Hein,B.Schlichting,E.Obermeier. Pirzoresistive silicoc sensor for very low pressure based on concept of stress concentration,. transducers'93(1993). 628-631p
[29] H.SNDMAIWER and K.KOHL. Piezoresistibive Low-pressure Sensor with High Sensitivity and High Accuracy. Sensors and Actuators. A21-23(1990). 142-145p
[30] 牛德芳等．力学量敏感器件及其应用．北京：科学出版社．1987年．85页
[31] 刘广玉，陈明等．新型传感器技术及应用．第一版．北京：北京航空航天大学出版．1995年．32页
[32] H.Sandmaier. Non-linear analytical modelling of bossed diaphrgms for pressure sensors. Sensors and Actuators. A21(1991). 815-819p
[33] 刘广玉，陈明等．新型传感器技术及应用．第一版．北京：北京航空航天大学出版社．1995年．47页
[34] 刘广玉，陈明等．新型传感器技术及应用．第一版．北京：北京航空航天大学出版社．1995年．62页
[35] 王善慈．多晶硅敏感技术．传感器技术．1994年，第5期．59页
[36] 王善慈．多晶硅敏感技术．传感器技术，1994年，第5期．57页．
[37] S.Marco,J.Ssmitier, et al. ,Analysis of nonlinearity in high sensitivity piezoresistive pressure sensors. Sensors and Actuators. A37-38(1993). 790-795p
[38] P.Joubert and M.Sarret. Presssure dependence of in situ boron-doped silicon filmes prepared by low-pressure chemical vapor deposition .Ⅰ. Microstructure. J.Appl. phys., Vol.66, No. 10. 15 November 1989. 4806-4811p
[39] 孙以材，刘玉岭，孟庆浩编著．压力传感器的设计、制造与应用．北京：冶金工业出版社．2000年．126页
[40] 浙江大学半导体器件教研室编．晶体管原理．第一版．北京：国防工业出版社．1980年．64p
[41] 浙江大学半导体器件教研室编．晶体管原理．第一版．北京：国防工业出版
社．1980年．275页
[42] 王善慈．多晶硅敏感技术．传感器技术．1994年．第3期．53页
[43] 牛德芳等．力学量敏感器件及其应用．科学出版社．1987年．91页
[44] M.Bao,et al. Etching front control of <110>strips for comer compensation, Sensors and Actuators. A37-38(1993). 727-732p
[45] A.Reisman, et.al. The controlled etching of silicon in catalyzed ethylenediamine-pyrocatechol -water solutions. J.Electrochem.Soc.. Vol.126,No.81979. 1406p
[46] U.SCHNAKENBERG;et,al.NH4OH-basedEtchantsforSilicon Micromachning,Sensors and Actuators. A21-23(1990). 1031-1035p
[47] K.Bean.. Anisotropic etching of silicon. IEEE Trans.ED-25. 1978. 1151p
[48] E.Bassous. fabrication of novel three-dimensional microstructures by anisotropic etching of(100)and (110)silicon. IEEETrans.ED-25. 1978. 1178p
[49] H.Seidel, et al Anisotropic etching of crystalline silicon in lkalinesolution, J.Electrochem.Soc. 137,1990. 3612p
[2] 徐淑霞，庞世信等．小型硅压力传感器批量生产工艺的研究．大连：第五届全国敏感元件与传感器学术会议论文集．1997．9．155页
[3] 陈中佛主编．电子工业生产技术手册—半导体与集成电路．卷7．北京：国防工业出版社．1991年．109页
[4] B.DIEM, R.TUUCHE. SIMOX (Separation by Ion Implantation of Oxygen):a Technology for Higy-temperature Silicon Sensor. Sensor and Actuators,. A21-A23 (1990). 1003-1006p
[5] J.Boussey-Said and N.Guillemot. Oxidation Stacking Faults in SIMOX and Silicon -on-InsulatorStructures Obtained by Wafer-Bonding. J.Electrochem. Soc.,Vol.140,No.2.February(1993). 544-548p
[6] 焦继伟，陆德仁等．外加电压下低温SDB技术研究．北京：STC’93．576页
[7] 孔德义，虞承端．硅片直接键合(SDB)技术中预键合的研究与实验．北京：STC’93．580页
[8] 朱作云，李跃进等．SiC薄膜高温压力传感器．传感器技术．2001年第20卷第2期．1．3页
[9] Robert OkojieS. Operation of 6H-SiC pressure sensor at 500℃. Sensor and Actuators. A 1998. 66(3). 200-204p
[10] 蔡浩一．多晶SiC薄膜的生长及其压阻特性．传感器技术．1995年第4期．7．9页
[11] 王阳元，T．I．卡明斯．多晶硅薄膜及其在集成电路中的应用．北京：科学出版社．1988．
[12] P.Kopystynski and E,Obermeier. The Wide-ranging Application of Polysilicon Layers in Solid-State Sensors. Sensors and Actuators. 17(1989). 69-73页
[13] FarrokhAyazi, Khalil Najafi. A HARPSS Polysilicon Vibration Ring Gyroscope. J.Microelectromechnical systems. Vol.10, No.2, June 2001. 169-179p
[14] Angela D.McConnell, Srinivasan Uma. Thermal Conductivity of Doped Polysilicon Layers. J.Microelectromechnical systems. Vol.10, No.3, September 2001. 360-369p
[15] Farrokh Ayazi, Khalil Najafi. High aspect-ratio polysilicon micromachining technology. Sensors and Actuators. 87(2000). 46-51p
[16] Xin Zhang, Tong-Yi Zhang. Residual-stress relaxation in polysilicon thin films by higy-temperature rapid thermal annerling. Sensors and Actuators. A64 (1998). 109-115p
[17] 王善慈．多晶硅敏感技术．传感器技术．1994年．第5期．55页
[18] H.SCHAFER. Temperature-Independent Pressure Sensors Using Polycrystalling Silicon Strain Gauges.. Sensors and Actuators. 17(1989). 521-527p
[19] 朱秀云，侯曾煜等．高性能多晶硅压力传感器的研制．传感技术学报．1993年(1)．1页
[20] 刘晓为，张国威等．传感器技术．1990．(5)34页
[21] 徐淑霞，庞世信等．用微机械加工工艺精密腐蚀硅膜片．大连：第五届全国敏感元件与传感器学术会议论文集．1997．9．50页
[22] 刘广玉，陈明等．新型传感器技术及应用．第一版．北京：北京航空航天大学出版社．1995年．1页
[23] 牛德芳等．力学量敏感器件及其应用．第一版．北京：科学出版社．1987．32页
[24] V.Mosser et al. Sensors and Actuators A,1991,28.113p
[25] 王善慈．传感器技术．1994．(6)：1页
[26] 赵甘明，鲍敏杭．多晶硅横向压阻灵敏度的统计分析．传感技术学报．1989．(2)1页
[27] M.Bao,L.Yu.Y.Wang. Micromechanicl Beam-diaphragm structure improves
performances of pressure transducers. Sensors and Actuators. A21-23(1990). 137-141p
[28] S.Hein,B.Schlichting,E.Obermeier. Pirzoresistive silicoc sensor for very low pressure based on concept of stress concentration,. transducers'93(1993). 628-631p
[29] H.SNDMAIWER and K.KOHL. Piezoresistibive Low-pressure Sensor with High Sensitivity and High Accuracy. Sensors and Actuators. A21-23(1990). 142-145p
[30] 牛德芳等．力学量敏感器件及其应用．北京：科学出版社．1987年．85页
[31] 刘广玉，陈明等．新型传感器技术及应用．第一版．北京：北京航空航天大学出版．1995年．32页
[32] H.Sandmaier. Non-linear analytical modelling of bossed diaphrgms for pressure sensors. Sensors and Actuators. A21(1991). 815-819p
[33] 刘广玉，陈明等．新型传感器技术及应用．第一版．北京：北京航空航天大学出版社．1995年．47页
[34] 刘广玉，陈明等．新型传感器技术及应用．第一版．北京：北京航空航天大学出版社．1995年．62页
[35] 王善慈．多晶硅敏感技术．传感器技术．1994年，第5期．59页
[36] 王善慈．多晶硅敏感技术．传感器技术，1994年，第5期．57页．
[37] S.Marco,J.Ssmitier, et al. ,Analysis of nonlinearity in high sensitivity piezoresistive pressure sensors. Sensors and Actuators. A37-38(1993). 790-795p
[38] P.Joubert and M.Sarret. Presssure dependence of in situ boron-doped silicon filmes prepared by low-pressure chemical vapor deposition .Ⅰ. Microstructure. J.Appl. phys., Vol.66, No. 10. 15 November 1989. 4806-4811p
[39] 孙以材，刘玉岭，孟庆浩编著．压力传感器的设计、制造与应用．北京：冶金工业出版社．2000年．126页
[40] 浙江大学半导体器件教研室编．晶体管原理．第一版．北京：国防工业出版社．1980年．64p
[41] 浙江大学半导体器件教研室编．晶体管原理．第一版．北京：国防工业出版
社．1980年．275页
[42] 王善慈．多晶硅敏感技术．传感器技术．1994年．第3期．53页
[43] 牛德芳等．力学量敏感器件及其应用．科学出版社．1987年．91页
[44] M.Bao,et al. Etching front control of <110>strips for comer compensation, Sensors and Actuators. A37-38(1993). 727-732p
[45] A.Reisman, et.al. The controlled etching of silicon in catalyzed ethylenediamine-pyrocatechol -water solutions. J.Electrochem.Soc.. Vol.126,No.81979. 1406p
[46] U.SCHNAKENBERG;et,al.NH4OH-basedEtchantsforSilicon Micromachning,Sensors and Actuators. A21-23(1990). 1031-1035p
[47] K.Bean.. Anisotropic etching of silicon. IEEE Trans.ED-25. 1978. 1151p
[48] E.Bassous. fabrication of novel three-dimensional microstructures by anisotropic etching of(100)and (110)silicon. IEEETrans.ED-25. 1978. 1178p
[49] H.Seidel, et al Anisotropic etching of crystalline silicon in lkalinesolution, J.Electrochem.Soc. 137,1990. 3612p