热丝化学气相沉积制备大面积金刚石薄膜工艺的研究
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摘要
由于金刚石薄膜有许多特殊而优越的性质,长期以来人类一直对它进行各种性质研究,以期充分利用。近年来,化学气相沉积金刚石的研究取得了很大进展,在某些方面已达到了实用阶段。同时,金刚石生长机理方面也有了一些初步认识。由于热丝法作为主要化学气相金刚石沉积方法之一有许多优点,如装置简单,宜于实现大面积生长等,这一工作不仅在理论上,而且在实际应用上均有重大意义。
本文首先从金刚石的各种优异性能开始,简要介绍了金刚石薄膜的研究的历史与现状,金刚石薄膜的制备方式与各种表征方法,薄膜生长的动力学因素。着重描述了作者用热丝法制备大面积金刚石薄膜的装置与沉积方法,并对影响薄膜生长的因素如:碳源种类,碳源浓度,沉积气压、温度、衬底材料、衬底处理,沉积时间等,进行了探索。最终找到一套利用简单的热丝沉积装置快速沉积大面积金刚石薄膜的沉积工艺。
实验表明:大面积HFCVD(热丝法)条件在灯丝与基片的距离6.5 mm,丙酮和氢气比例为0.75%,灯丝功率为6.0 kW,炉内压力1.5 kPa,生长时间5个小时,以硅为基底沉积得到了质量较好的金刚石薄膜,通过观测和试验我们得知,薄膜致密连续均匀。硼掺杂大面积金刚石膜在电化学方面具有很好的实用性。
Because the diamond has many special and superior performances, it has been a long time for human studying and hoping to full use it. In recent years, chemical vapor deposition diamond research has made great progress, and in some areas it has reached the practical stage. At the same time, diamond growth mechanism has also had some initial understanding. The law as a major hot-filament chemical vapor deposition of diamond HFCVD(hot-filament diamond thin film) has many advantages, such as the simple device, suitable for realizing the growth area, this work not only in theory but also in practical, are of great significance.
In this paper the author first introduces the excellent various performance of diamond, and then lists diamond films briefed on the history and current situation, diamond film Preparation and Characterization of ways, the dynamics of diamond thin film growth factors. At last focuses on prepared by hot-filament large area diamond film deposition methods and devices, and the impact of factors such as the growth of thin films: types of carbon, carbon concentration, deposition pressure, temperature, substrate material, substrate handling, sedimentary time etc. Finally he found a rapid method of deposition large area diamond film with a simple hot-filament device.
Experiments show that large area HFCVD in the conditions: filament substrate distance and 6.5 mm, acetone and hydrogen ratio of 0.75%, filament power of 6.0 kW, 1.5kPa furnace pressure, the growth time five hours, silicon substrate deposition to be a better quality diamond film, through observation and experiments we know that the film dense continuous and uniform. Boron-doped diamond large area in the electrochemical membrane has a good utility.
本文首先从金刚石的各种优异性能开始,简要介绍了金刚石薄膜的研究的历史与现状,金刚石薄膜的制备方式与各种表征方法,薄膜生长的动力学因素。着重描述了作者用热丝法制备大面积金刚石薄膜的装置与沉积方法,并对影响薄膜生长的因素如:碳源种类,碳源浓度,沉积气压、温度、衬底材料、衬底处理,沉积时间等,进行了探索。最终找到一套利用简单的热丝沉积装置快速沉积大面积金刚石薄膜的沉积工艺。
实验表明:大面积HFCVD(热丝法)条件在灯丝与基片的距离6.5 mm,丙酮和氢气比例为0.75%,灯丝功率为6.0 kW,炉内压力1.5 kPa,生长时间5个小时,以硅为基底沉积得到了质量较好的金刚石薄膜,通过观测和试验我们得知,薄膜致密连续均匀。硼掺杂大面积金刚石膜在电化学方面具有很好的实用性。
Because the diamond has many special and superior performances, it has been a long time for human studying and hoping to full use it. In recent years, chemical vapor deposition diamond research has made great progress, and in some areas it has reached the practical stage. At the same time, diamond growth mechanism has also had some initial understanding. The law as a major hot-filament chemical vapor deposition of diamond HFCVD(hot-filament diamond thin film) has many advantages, such as the simple device, suitable for realizing the growth area, this work not only in theory but also in practical, are of great significance.
In this paper the author first introduces the excellent various performance of diamond, and then lists diamond films briefed on the history and current situation, diamond film Preparation and Characterization of ways, the dynamics of diamond thin film growth factors. At last focuses on prepared by hot-filament large area diamond film deposition methods and devices, and the impact of factors such as the growth of thin films: types of carbon, carbon concentration, deposition pressure, temperature, substrate material, substrate handling, sedimentary time etc. Finally he found a rapid method of deposition large area diamond film with a simple hot-filament device.
Experiments show that large area HFCVD in the conditions: filament substrate distance and 6.5 mm, acetone and hydrogen ratio of 0.75%, filament power of 6.0 kW, 1.5kPa furnace pressure, the growth time five hours, silicon substrate deposition to be a better quality diamond film, through observation and experiments we know that the film dense continuous and uniform. Boron-doped diamond large area in the electrochemical membrane has a good utility.
引文
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