钛酸锶钡薄膜的制备及微细图形加工
|
摘要
钛酸锶钡(BST)薄膜具有较高的介电常数和较低的介质损耗，在动态随机存储器(DRAM)、传感器、探测器等方面应用前景广阔。本文旨在采用Sol-Gel法，通过掺杂Sn元素改善BST薄膜的介电性能，并采用溶胶—凝胶与化学修饰相结合的新技术制得BST薄膜的微细图形。采用紫外—可见光光度仪、X射线衍射仪、LCR数字电桥等手段，分别探讨了光敏性溶胶的感光性、薄膜晶体结构及各种因素对薄膜介电性能的影响，结论如下：
(1)用SrCl_2作为锶源，用Ti(OC_4H_9)_4、BaAc_2为出发原料， 乙二醇甲醚(MOE)为溶剂，按照Ti：AcAcH：MOE=1：2：30，BaAc_2：Kt：MOE=1：3：30，Sr：MOE=1：30的比例，配制出稳定，成膜良好的溶胶，溶胶长时间放置，性状无明显变化。
(2)首次在ITO／玻璃上制备了BST薄膜，其晶化温度为650℃。在自制的Pt／TiO_2／Si和低阻Si衬底上制备的BST薄膜，晶化温度为700℃。其中，在Pt／TiO_2／Si上制备的BST薄膜介电常数为388，与目前文献报道相当，相应的损耗为0.18。在低阻Si上制备的BST薄膜介电常数为342，介电损耗为0.05。
(3)以Sn~(2+)为掺杂源，其最佳掺杂量为15％mol，在此掺杂量下，BST薄膜的介电常数为420，高于未掺杂薄膜，介电损耗为0.1。以Sn~(4+)为掺杂源的BST薄膜，掺杂量为10％mol时，其介电常数和损耗分别为814和0.07，其介电常数高于掺杂同比例Sn~(2+)的BST薄膜，也高于同类方法制备的BST薄膜。
西安理工大学硕士学位论文
(4)以AcAcH为鳌合剂，添加比例为Ti4+:AcAcH二1:2，配制了光敏性溶胶。并
用紫外光光照法制备了BST薄膜的微细图形，溶洗剂为乙醇，图形热处理后的厚度为
约70nm。同样以BzAcH为鳌合剂，按Ti4+:BzAcH二1:0.8比例配制了光敏性溶胶。用
此溶胶制备BST凝胶膜，通过激光干涉制备了BST薄膜光栅，溶洗剂为乙醇十去离
子水，图形热处理后的厚度约为70nm，线宽约为0.5卜m。
(5)研究发现采用化学修饰法，引入鳌合剂BzAcH制备BsT溶胶，得到的BsT
陶瓷薄膜具有更好的介电性能，在低阻Si上制备的BST薄膜，经700℃晶化IOmin，
介电常数为550，损耗0.068，优于目前文献报道。
Barium strontium titanate (BST) shows high dielectric constant and low dissipation factor and holds great promise for wide applications in dynamic random access memory (DRAM), transducer and infrared detector. In this paper, Sn-doped BST thin films with excellent dielectric property were prepared by Sol-Gel process. And the fine patterning of the films was fabricated by chemical modified method. The UV-Vis spectrometer was used to analyze the photosensitive property of the BST gel films. X-Ray diffraction meter and LCR numeral electric bridge were applied to study the crystal phase and the dielectric performance respectively. The results were shown as follows:
(1) A stable BST precursor was prepared with SrCl2 Ti(OC4H9)4 and BaAc2 as starting materials, MOE as solvent, AcAcH as chelator. The molar ratio was Ti:AcAcH:MOE=1:2:30, BaAc2:Kt:MOE=l:3:30, Sr:MOE=l:30.
(2) Fabricated BST thin films on ITO/glass substrate and the crystallization temperature of the film was 650℃. When the films on Pt/TiO2/Si and low resistance Si substrates was dwelled at 700℃ for 10min, the films were made up of perovskite totally. The permittivity of the film on Pt/TiO2/Si substrates were 388, whice was equal to that of reference, and the dissipation factor was 0.18. And the permittivity and dissipation factor on Si substrate were 342 and 0.05 respectively.
(3) When the Sn2+ was used as dopant, 15mol% is the optimal additional amount. The BST films with 15mol% Sn2+ dielectric constant was 420, which was higer than that non-doped BST thin films. The dielectric constant of BST thin films with 10mol% Sn4+ was up to 814, such result is great higher than the BST films with 10mol% Sn2+and non-doped thin films, and the dissipation factor was 0.07.
(4) A photosensitive sol can be prepared using AcAcH as chelator. And the optimal molar ratio was Ti4+:AcAcH=l :2. A fine-patterning can be fibricated by such percurtor with ethyl alcohol as solvent, and the thickness of the films was 70nm after annealing. The gel films derived from the BST sol with BzAcH as chelator, can be used to fabricate the fine pattern by laser interference method. The optimal molar ratio of BzAcH was Ti4+:BzAcH=l:0.8, and the solvent was ethyl alcohol and de-ionied water. After heat treatment, the thickness of the thin films was about 70nm and the line width was 0.5 urn.
(5) When BzAcH was used as chelator to prepare BST precursor, BST thin films with better dieletric property can be fibracated. The permittivity and dissipation factor were 550 and 0.068 respectively. Such result was better than the reference refered.
(1)用SrCl_2作为锶源，用Ti(OC_4H_9)_4、BaAc_2为出发原料， 乙二醇甲醚(MOE)为溶剂，按照Ti：AcAcH：MOE=1：2：30，BaAc_2：Kt：MOE=1：3：30，Sr：MOE=1：30的比例，配制出稳定，成膜良好的溶胶，溶胶长时间放置，性状无明显变化。
(2)首次在ITO／玻璃上制备了BST薄膜，其晶化温度为650℃。在自制的Pt／TiO_2／Si和低阻Si衬底上制备的BST薄膜，晶化温度为700℃。其中，在Pt／TiO_2／Si上制备的BST薄膜介电常数为388，与目前文献报道相当，相应的损耗为0.18。在低阻Si上制备的BST薄膜介电常数为342，介电损耗为0.05。
(3)以Sn~(2+)为掺杂源，其最佳掺杂量为15％mol，在此掺杂量下，BST薄膜的介电常数为420，高于未掺杂薄膜，介电损耗为0.1。以Sn~(4+)为掺杂源的BST薄膜，掺杂量为10％mol时，其介电常数和损耗分别为814和0.07，其介电常数高于掺杂同比例Sn~(2+)的BST薄膜，也高于同类方法制备的BST薄膜。
西安理工大学硕士学位论文
(4)以AcAcH为鳌合剂，添加比例为Ti4+:AcAcH二1:2，配制了光敏性溶胶。并
用紫外光光照法制备了BST薄膜的微细图形，溶洗剂为乙醇，图形热处理后的厚度为
约70nm。同样以BzAcH为鳌合剂，按Ti4+:BzAcH二1:0.8比例配制了光敏性溶胶。用
此溶胶制备BST凝胶膜，通过激光干涉制备了BST薄膜光栅，溶洗剂为乙醇十去离
子水，图形热处理后的厚度约为70nm，线宽约为0.5卜m。
(5)研究发现采用化学修饰法，引入鳌合剂BzAcH制备BsT溶胶，得到的BsT
陶瓷薄膜具有更好的介电性能，在低阻Si上制备的BST薄膜，经700℃晶化IOmin，
介电常数为550，损耗0.068，优于目前文献报道。
Barium strontium titanate (BST) shows high dielectric constant and low dissipation factor and holds great promise for wide applications in dynamic random access memory (DRAM), transducer and infrared detector. In this paper, Sn-doped BST thin films with excellent dielectric property were prepared by Sol-Gel process. And the fine patterning of the films was fabricated by chemical modified method. The UV-Vis spectrometer was used to analyze the photosensitive property of the BST gel films. X-Ray diffraction meter and LCR numeral electric bridge were applied to study the crystal phase and the dielectric performance respectively. The results were shown as follows:
(1) A stable BST precursor was prepared with SrCl2 Ti(OC4H9)4 and BaAc2 as starting materials, MOE as solvent, AcAcH as chelator. The molar ratio was Ti:AcAcH:MOE=1:2:30, BaAc2:Kt:MOE=l:3:30, Sr:MOE=l:30.
(2) Fabricated BST thin films on ITO/glass substrate and the crystallization temperature of the film was 650℃. When the films on Pt/TiO2/Si and low resistance Si substrates was dwelled at 700℃ for 10min, the films were made up of perovskite totally. The permittivity of the film on Pt/TiO2/Si substrates were 388, whice was equal to that of reference, and the dissipation factor was 0.18. And the permittivity and dissipation factor on Si substrate were 342 and 0.05 respectively.
(3) When the Sn2+ was used as dopant, 15mol% is the optimal additional amount. The BST films with 15mol% Sn2+ dielectric constant was 420, which was higer than that non-doped BST thin films. The dielectric constant of BST thin films with 10mol% Sn4+ was up to 814, such result is great higher than the BST films with 10mol% Sn2+and non-doped thin films, and the dissipation factor was 0.07.
(4) A photosensitive sol can be prepared using AcAcH as chelator. And the optimal molar ratio was Ti4+:AcAcH=l :2. A fine-patterning can be fibricated by such percurtor with ethyl alcohol as solvent, and the thickness of the films was 70nm after annealing. The gel films derived from the BST sol with BzAcH as chelator, can be used to fabricate the fine pattern by laser interference method. The optimal molar ratio of BzAcH was Ti4+:BzAcH=l:0.8, and the solvent was ethyl alcohol and de-ionied water. After heat treatment, the thickness of the thin films was about 70nm and the line width was 0.5 urn.
(5) When BzAcH was used as chelator to prepare BST precursor, BST thin films with better dieletric property can be fibracated. The permittivity and dissipation factor were 550 and 0.068 respectively. Such result was better than the reference refered.
引文
[1] 钟维烈。铁电物理学。科学出版社，1998。
[2] 周馨我，张公正，范广裕。《功能材料学》。北京理工大学出版社，2002：54。
[3] 徐闫。溶胶—凝胶法制备的钛酸锶钡薄膜的介电性质。硕士学位论文，2002。
[4] 刘梅冬，曾亦可。铁电薄膜的制备及应用技术研究。材料导报，14(12)，2000：47-49。
[5] 李言荣，恽正中。《电子材料导论》清华大学出版社，2001年。
[6] Whatmore W. R., Watton R. Pyroelectric ceramics and thin films for uncooled thermal imaging [J]. Ferroelectrics,2000,236:259-279.
[7] J.-G. Cheng et al., Sol-Gel-derived pyroelectric barium strontium titanate thin films for infrared detector applications, Appl. Phys. A 71, 667-670(2000).
[8] 翟永青，丁士文。Ba_(1-x)Sr_xTi_(1-y)M_yO_3固溶体的湿化学法合成与介电特性。无机化学学报，16(4)，2000：658—660。
[9] Sunggi Baik et. al. ,lntluence of the laser wavelength on the microstructure of laser ablated Ba_(0.5)Sr_(0.5)TiO_3 films, J. Appl. Phys. 80(12), 15 December 1996:7046-7951.
[10] D. Roy and S.B. Krupanidhi, Pulsed excimer laser ablated barium titanate thin films, J. Appl. Phys. Lett. 61 (17), 26 October 1992:2057-2059.
[11] Myung-Box Lee, Masashi Kawasaki, Heteroepitaxial growth of BaTiO_3 films on Si by pulsed laser deposition, J.Appl. Phys. Lett. 66(11), 13
March 1995:1331-1333.
[12] Young-Chul CHOI. Improvements of the Properties of Chemical-Vapor-Deposited (Ba,Sr)TiO_3 Films through Use of a Seed Layer, Jpn. J. Appl. Phys. Vol. 36(1997) pp.6824-6828.
[13] Kazuhide Abe and Shuichi Komatsu, Ferroelectric properties in epitaxially grown Ba_xSr_(1-x)TiO_3 thin films, J. Appl. Phys. 77(12), 15 June 1995:6461-6465.
[14] G.W. Dietz , Leakage currents in Ba_(0.7)Sr_(0.3)TiO_3 thin films for ultrahigh-density dynamic randorn access memories, J. Appl. Phys. 82(5), 1 September 1997:2359-2364。
[15] 金承钰，丁永平。Sol—Gel法制备Ba_xSr_(1-x)TiO_3铁电薄膜化学机制的探讨。无机材料学报，15(2)，2000：287—291。
[16] 兰艳梅，刘明登。溶胶—凝胶法制备BST铁电薄膜材料的机理研究。广西师范大学学报，14(2)，1996：53-57。
[17] 齐兵，何夕云。水基溶胶—凝胶法制备Ba_(0.5)Sr_(0.5)TiO_3薄膜及其介电性能研究。无机材料学报，13(3)，1998：390—395。
[18] J.-G. Cheng et al., Fabrication and electrical properties of sol-gel-derived Ba_(0.8)Sr_(0.2)TiO_3 ferroelectric films from a 0.05-M spin-on solution, Apply. Phys. A 70,411-414(2000).
[19] HU-YONG TIAN. Micro-structural evolution of compositionally step-varied BST thin films by sol-gel process, Journal of materials science letters 20, 2001, 1059-1061.
[20] 黄元龙，赵光明。溶剂、催化剂对TiO_2溶胶-凝胶过程的影响。功能材料，28(1)，1997：37-41。
[21] Guanghua Yi, Michael Sayer. Sol-gel processing of complex oxide films. ceramic bullitin. 70 (7).1991:1173-1179.
[22] A.Mosset, etc: J.Non-Crystalline Solids, 1998; 100:339.
[23] P. P. Phule and S. H. Risbud: Advanced Ceramic Materials, 1988;3(2):183.
[24] P P. Phule and S. H. Risbud: Mat. Sci.&Engr,1989; B3:241.
[25] M. N. Kamalasanan et al: J. Appl. Phys., 1993; 74(9) 5679.
[26] Ki Hyun Yoon and Ki Sup Chung: J. Appl. Phys., 1992; 72(12)5743.
[27] P. P. Phule and S. H. Risbud: J. Mat. Sci, 1990; 25:1169.
[28] 王培英等，华中理工大学学报，1991；19(3)：69。
[29] 任天令等：无机材料学报，1994；9(2)：161。
[30] 王长文等：武汉工业大学学报，16(1)，1994：7。
[31] M. N. Kamalasanan and S. Chandra: Appl. Phys. Lett. 59(27), 1991:3547.
[32] 吴椒荣等。功能材料，26(5)，1995：427。
[33] Sunggi Baik et. a1., Influence of the laser wavelength on the microstructure of laser ablated Ba_(0.5)Sr_(0.5)TiO_3 films，J. Appl. Phys. 80(12) 1996:7046-7951.
[34] Yebin Xu et a1., Sol-Gel Preparation of BaTi_4O_9 and Ba_2Ti_9O_(20)，J. Am. Ceram. Soc., 84(3), 2001:669-71.
[35] Takashi HAYASHI and Takashi TANAKA，Preparation and Dielectric Properties of SrTiO_3／BaTiO_3 Multilayer Thin Films by Sol-Gel Method， Jpn. J. Appl. Phys. Vol. 34(1995)pp. 5100-5104．
[36] 金承钰，丁永平。。Sol-Gel法制备BST铁电薄膜化学机制探讨。无机材料学报，15(3),2000：287-292。
[37] 张红芳，佘正国。探讨溶胶—凝胶工艺制备PZT薄膜.江苏大学学报(自然科学版)，Vol：23(2)，2002：83-87。
[38] 孙顺明。铁电薄膜的材料系统与功能性质。硅酸盐通报．4，1999：71-75。
[39] 卢朝靖，蒋昌忠，王世敏，等．在Pt／SrTiO_3衬底上制备高c轴取向的
PbTiO_3薄膜．科学通报．38(14)，1993：1273-1275。
[40]曾亦可，刘梅冬，饶韫华．底电极对PYZT铁电薄膜电容器的影响．电子元件与材料．18(2)，1999：3-10。
[41] AL-Shareef HN,Bellur K. R. ,Kingun AL. Influence of platinum interlayers on the electrical properties of RuO_2/Pb(Zr_(0.53),Ti_(0.47)O_3/RuO_2 capacitor heterostructures. .Appl Phys Lett. vol:66(2), 1995:239-241.
[42] 包定华，张良莹。铁电薄膜的微图形化研究。硅酸盐通报．vol:3, 1998:59-63。
[43] 贾德昌，周玉。《电子材料》哈尔滨：哈尔滨工业大学出版社，2000：327。
[44] Katsuhide Shinmou,Noboru Tohge,Tsutomu Minami.Fine-Patterning of ZrO_2 Thin Films by the Photolysis of Chemically Modified Gel Films.Jpn. J.Appl.Phys. vol:33(8B),1994:1181-1184.
[45] Gaoyang Zhao,Noboru Tohge. Preparation of Photosensitive Gel Films And Fine Patterning of Amorphous Al_2O_3-SiO_2 Thin Films.Materials research Bulletin. 1998.33(1):21-33.
[46] Gaoyang Zhao,Noboru Tohge,Preparation of photosensitive Al_2O_3 gel films and their application to fine-patterning, J.Polym.Sci. Technol. 1996, 53(4):253-259.
[47] 龚健，附小荣。Y掺杂钛酸钡薄膜的Sol-Gel法制备及PTC效应。半导体学报，20(3)，1999：246-249。
[48] 刘国范，王兢。无机杂质对改善纳米BaTiO_3湿敏特性的作用。功能材料，29(2)，1998：198-200。
[49] 董占能，赵冰。金属醇盐的物化特性。昆明理工大学学报，25(2)，2000：58-67。
[50] 牡泽惠，锆钛酸铅镧铁电薄膜的制备及微细加工。硕士论文。
[51] 阎鹏勋，谢亮。在ITO玻璃衬底上制备锆钛酸铅铁电薄膜。硅酸
盐学报，28(5)，2000。
[52] Yongping Ding, Jiansheng Wu. Abnormalities in the ferroelectric behavior of Ba_(0.7)TSr_(0.3)TiO_3 thin films caused by fluctuations in Ba/Sr ratios in micro-regions. Journal of Materials Science Letters, 20, 2001: 1469-1471.
[53] 屈新萍，丁爱丽。Pg╱Ti电极的扩散行为及其对铁电薄膜的影响。无机材料学报，11(3)，1996：499—504。
[54] H.Z. Jin, J. Zhu et al. An interfacial defect layer observed at (Ba,Sr)/TiO_3/Pt interface. Thin Solid Films 429 (2003):282-285.
[55] Elif Ertkin, Jenny Keyani, et al. A Capacitor Dielectric for 16Gbit DRAM. MSE 225 Thin Films, 15, 2002:1-5.
[56] 王培英，王欣宇。Ba_(1-x)Sr_xTiO_3薄膜的制备及特性研究。功能材料，29(5)，536-539。
[57] 范志新。多种功能材料最佳掺杂含量定量理论的研究：河北工业大学学报，31(2)，2002：79-82。
[58] R．C．埃文思著，胡玉才戴寰译。《结晶化学导论》，人民教育出版社，1981：162—166。
[59] 靳正国，戴维迪。Dy_2O_3和La_2O_3掺杂对BaTiO_3铁电陶瓷介电特性的影响。硅酸盐学报，29(5)，2001：397-401。
[60] 赵高扬，赵桂荣。功能薄膜微细图形制作新技术。功能材料增刊，(10)，2001：1377-1380。
[61] N.tohge,K.Shinmou,T.Minami. Effects of UV-Irradiation on the Formation Oxide Thin Films from Chemically Modified Metal-Alkoxides. Journal of Sol-Gel Science and Technology.2,1994:581-585.
[2] 周馨我，张公正，范广裕。《功能材料学》。北京理工大学出版社，2002：54。
[3] 徐闫。溶胶—凝胶法制备的钛酸锶钡薄膜的介电性质。硕士学位论文，2002。
[4] 刘梅冬，曾亦可。铁电薄膜的制备及应用技术研究。材料导报，14(12)，2000：47-49。
[5] 李言荣，恽正中。《电子材料导论》清华大学出版社，2001年。
[6] Whatmore W. R., Watton R. Pyroelectric ceramics and thin films for uncooled thermal imaging [J]. Ferroelectrics,2000,236:259-279.
[7] J.-G. Cheng et al., Sol-Gel-derived pyroelectric barium strontium titanate thin films for infrared detector applications, Appl. Phys. A 71, 667-670(2000).
[8] 翟永青，丁士文。Ba_(1-x)Sr_xTi_(1-y)M_yO_3固溶体的湿化学法合成与介电特性。无机化学学报，16(4)，2000：658—660。
[9] Sunggi Baik et. al. ,lntluence of the laser wavelength on the microstructure of laser ablated Ba_(0.5)Sr_(0.5)TiO_3 films, J. Appl. Phys. 80(12), 15 December 1996:7046-7951.
[10] D. Roy and S.B. Krupanidhi, Pulsed excimer laser ablated barium titanate thin films, J. Appl. Phys. Lett. 61 (17), 26 October 1992:2057-2059.
[11] Myung-Box Lee, Masashi Kawasaki, Heteroepitaxial growth of BaTiO_3 films on Si by pulsed laser deposition, J.Appl. Phys. Lett. 66(11), 13
March 1995:1331-1333.
[12] Young-Chul CHOI. Improvements of the Properties of Chemical-Vapor-Deposited (Ba,Sr)TiO_3 Films through Use of a Seed Layer, Jpn. J. Appl. Phys. Vol. 36(1997) pp.6824-6828.
[13] Kazuhide Abe and Shuichi Komatsu, Ferroelectric properties in epitaxially grown Ba_xSr_(1-x)TiO_3 thin films, J. Appl. Phys. 77(12), 15 June 1995:6461-6465.
[14] G.W. Dietz , Leakage currents in Ba_(0.7)Sr_(0.3)TiO_3 thin films for ultrahigh-density dynamic randorn access memories, J. Appl. Phys. 82(5), 1 September 1997:2359-2364。
[15] 金承钰，丁永平。Sol—Gel法制备Ba_xSr_(1-x)TiO_3铁电薄膜化学机制的探讨。无机材料学报，15(2)，2000：287—291。
[16] 兰艳梅，刘明登。溶胶—凝胶法制备BST铁电薄膜材料的机理研究。广西师范大学学报，14(2)，1996：53-57。
[17] 齐兵，何夕云。水基溶胶—凝胶法制备Ba_(0.5)Sr_(0.5)TiO_3薄膜及其介电性能研究。无机材料学报，13(3)，1998：390—395。
[18] J.-G. Cheng et al., Fabrication and electrical properties of sol-gel-derived Ba_(0.8)Sr_(0.2)TiO_3 ferroelectric films from a 0.05-M spin-on solution, Apply. Phys. A 70,411-414(2000).
[19] HU-YONG TIAN. Micro-structural evolution of compositionally step-varied BST thin films by sol-gel process, Journal of materials science letters 20, 2001, 1059-1061.
[20] 黄元龙，赵光明。溶剂、催化剂对TiO_2溶胶-凝胶过程的影响。功能材料，28(1)，1997：37-41。
[21] Guanghua Yi, Michael Sayer. Sol-gel processing of complex oxide films. ceramic bullitin. 70 (7).1991:1173-1179.
[22] A.Mosset, etc: J.Non-Crystalline Solids, 1998; 100:339.
[23] P. P. Phule and S. H. Risbud: Advanced Ceramic Materials, 1988;3(2):183.
[24] P P. Phule and S. H. Risbud: Mat. Sci.&Engr,1989; B3:241.
[25] M. N. Kamalasanan et al: J. Appl. Phys., 1993; 74(9) 5679.
[26] Ki Hyun Yoon and Ki Sup Chung: J. Appl. Phys., 1992; 72(12)5743.
[27] P. P. Phule and S. H. Risbud: J. Mat. Sci, 1990; 25:1169.
[28] 王培英等，华中理工大学学报，1991；19(3)：69。
[29] 任天令等：无机材料学报，1994；9(2)：161。
[30] 王长文等：武汉工业大学学报，16(1)，1994：7。
[31] M. N. Kamalasanan and S. Chandra: Appl. Phys. Lett. 59(27), 1991:3547.
[32] 吴椒荣等。功能材料，26(5)，1995：427。
[33] Sunggi Baik et. a1., Influence of the laser wavelength on the microstructure of laser ablated Ba_(0.5)Sr_(0.5)TiO_3 films，J. Appl. Phys. 80(12) 1996:7046-7951.
[34] Yebin Xu et a1., Sol-Gel Preparation of BaTi_4O_9 and Ba_2Ti_9O_(20)，J. Am. Ceram. Soc., 84(3), 2001:669-71.
[35] Takashi HAYASHI and Takashi TANAKA，Preparation and Dielectric Properties of SrTiO_3／BaTiO_3 Multilayer Thin Films by Sol-Gel Method， Jpn. J. Appl. Phys. Vol. 34(1995)pp. 5100-5104．
[36] 金承钰，丁永平。。Sol-Gel法制备BST铁电薄膜化学机制探讨。无机材料学报，15(3),2000：287-292。
[37] 张红芳，佘正国。探讨溶胶—凝胶工艺制备PZT薄膜.江苏大学学报(自然科学版)，Vol：23(2)，2002：83-87。
[38] 孙顺明。铁电薄膜的材料系统与功能性质。硅酸盐通报．4，1999：71-75。
[39] 卢朝靖，蒋昌忠，王世敏，等．在Pt／SrTiO_3衬底上制备高c轴取向的
PbTiO_3薄膜．科学通报．38(14)，1993：1273-1275。
[40]曾亦可，刘梅冬，饶韫华．底电极对PYZT铁电薄膜电容器的影响．电子元件与材料．18(2)，1999：3-10。
[41] AL-Shareef HN,Bellur K. R. ,Kingun AL. Influence of platinum interlayers on the electrical properties of RuO_2/Pb(Zr_(0.53),Ti_(0.47)O_3/RuO_2 capacitor heterostructures. .Appl Phys Lett. vol:66(2), 1995:239-241.
[42] 包定华，张良莹。铁电薄膜的微图形化研究。硅酸盐通报．vol:3, 1998:59-63。
[43] 贾德昌，周玉。《电子材料》哈尔滨：哈尔滨工业大学出版社，2000：327。
[44] Katsuhide Shinmou,Noboru Tohge,Tsutomu Minami.Fine-Patterning of ZrO_2 Thin Films by the Photolysis of Chemically Modified Gel Films.Jpn. J.Appl.Phys. vol:33(8B),1994:1181-1184.
[45] Gaoyang Zhao,Noboru Tohge. Preparation of Photosensitive Gel Films And Fine Patterning of Amorphous Al_2O_3-SiO_2 Thin Films.Materials research Bulletin. 1998.33(1):21-33.
[46] Gaoyang Zhao,Noboru Tohge,Preparation of photosensitive Al_2O_3 gel films and their application to fine-patterning, J.Polym.Sci. Technol. 1996, 53(4):253-259.
[47] 龚健，附小荣。Y掺杂钛酸钡薄膜的Sol-Gel法制备及PTC效应。半导体学报，20(3)，1999：246-249。
[48] 刘国范，王兢。无机杂质对改善纳米BaTiO_3湿敏特性的作用。功能材料，29(2)，1998：198-200。
[49] 董占能，赵冰。金属醇盐的物化特性。昆明理工大学学报，25(2)，2000：58-67。
[50] 牡泽惠，锆钛酸铅镧铁电薄膜的制备及微细加工。硕士论文。
[51] 阎鹏勋，谢亮。在ITO玻璃衬底上制备锆钛酸铅铁电薄膜。硅酸
盐学报，28(5)，2000。
[52] Yongping Ding, Jiansheng Wu. Abnormalities in the ferroelectric behavior of Ba_(0.7)TSr_(0.3)TiO_3 thin films caused by fluctuations in Ba/Sr ratios in micro-regions. Journal of Materials Science Letters, 20, 2001: 1469-1471.
[53] 屈新萍，丁爱丽。Pg╱Ti电极的扩散行为及其对铁电薄膜的影响。无机材料学报，11(3)，1996：499—504。
[54] H.Z. Jin, J. Zhu et al. An interfacial defect layer observed at (Ba,Sr)/TiO_3/Pt interface. Thin Solid Films 429 (2003):282-285.
[55] Elif Ertkin, Jenny Keyani, et al. A Capacitor Dielectric for 16Gbit DRAM. MSE 225 Thin Films, 15, 2002:1-5.
[56] 王培英，王欣宇。Ba_(1-x)Sr_xTiO_3薄膜的制备及特性研究。功能材料，29(5)，536-539。
[57] 范志新。多种功能材料最佳掺杂含量定量理论的研究：河北工业大学学报，31(2)，2002：79-82。
[58] R．C．埃文思著，胡玉才戴寰译。《结晶化学导论》，人民教育出版社，1981：162—166。
[59] 靳正国，戴维迪。Dy_2O_3和La_2O_3掺杂对BaTiO_3铁电陶瓷介电特性的影响。硅酸盐学报，29(5)，2001：397-401。
[60] 赵高扬，赵桂荣。功能薄膜微细图形制作新技术。功能材料增刊，(10)，2001：1377-1380。
[61] N.tohge,K.Shinmou,T.Minami. Effects of UV-Irradiation on the Formation Oxide Thin Films from Chemically Modified Metal-Alkoxides. Journal of Sol-Gel Science and Technology.2,1994:581-585.