掺Er：Al_2O_3和掺Er：nc-Si/SiO_2材料的制备与表征
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摘要
随着全光网络和光子集成技术的发展，掺铒光波导放大器(EDWA：Er Doped Waveguide Amplifier)作为较新的研究领域，正在受到越来越多科研工作者的重视。本论文采用离子束辅助沉积和离子注入法开展了掺Er：Al_2O_3薄膜和掺Er：nc-Si／SiO_2材料的研究。
实验采用离子束辅助沉积和离子注入法制备了掺铒Al_2O_3薄膜，研究了不同退火温度下，样品的成分、结构、表面形貌和化学价态。随退火温度的升高，Er离子被激活，样品的光致发光强度随退火温度升高而上升。样品在700℃退火下，折射率和粗糙度都达到最小值，影响了透射谱中此样品的透射峰强度和光吸收损耗，并影响了光致发光谱。论文对材料发光机理进行了一些探讨。有关微观结构的具体变化，及对材料光致发光机理的影响需要系统的研究。实验还采用Xe离子轰击的方法制备了非晶的Al_2O_3薄膜，研究了轰击对样品表面形貌的影响。
论文还利用离子注入方法制备了纳米颗粒直径为2～4nm的nc-Si／SiO_2材料，制备的Si纳米晶颗粒周围分布着大量的非晶硅。随退火温度升高，非晶硅层减少，晶化加强。
论文制备了掺铒nc-Si／SiO_2材料。研究了材料的微观结构，并测量了样品的光致发光谱，研究了材料的微观结构和掺Er后材料发光强度随测量温度的变化。实验对材料的发光机理进行了深入的探讨，发现存在于非晶氧化硅及其界面上的光激活Er离子，通过非晶硅与纳米硅相耦合，非晶硅的存在影响了纳米硅与Er离子间的能量传递，对Polman等人的纳米硅与Er的强耦合模型提出了改进。
最后，论文初步开展了联合沉积法制备掺Er薄膜材料的工作。
With the development of optical communication and integrated optoelectronics, Er Doped Waveguide Amplifier (EDWA) has become the hotspot in the field of optical fiber communication and optoelectronics. We prepared Er-doped Al2O3 Films and Er-doped nc-SiO2 Films, and studied their characterization.
Er-doped Al2O3 Films were prepared by Ion Beam Enhanced Deposition (IBED) and Ion Implantation. After different annealing temperature, we examined the composition, surface morphology, structure and chemical value. Er3+ ions were activated gradually and photoluminescence intensity increased with the annealing temperature. Annealed at 700℃, refractive index and surface roughness reached the least, which affected optical transmission spectra, optical absorption loss, and photoluminescence intensity. This thesis discussed the PL mechanism.
We also prepared Er-doped nc-SiO2 Films by Ion Implantation. After different annealing temperature, the microstructure and photoluminescence were investigated. We discussed the PL mechanism in-depth, and made conclusions that Er ions lied in amorphous Si and coupled with nc-Si through a-Si, which affected the energy transfer from nc-Si to Er. We ameliorated Polman's model.
Finally, the paper developed the co-sputtering technology to prepare Er-doped films.
实验采用离子束辅助沉积和离子注入法制备了掺铒Al_2O_3薄膜，研究了不同退火温度下，样品的成分、结构、表面形貌和化学价态。随退火温度的升高，Er离子被激活，样品的光致发光强度随退火温度升高而上升。样品在700℃退火下，折射率和粗糙度都达到最小值，影响了透射谱中此样品的透射峰强度和光吸收损耗，并影响了光致发光谱。论文对材料发光机理进行了一些探讨。有关微观结构的具体变化，及对材料光致发光机理的影响需要系统的研究。实验还采用Xe离子轰击的方法制备了非晶的Al_2O_3薄膜，研究了轰击对样品表面形貌的影响。
论文还利用离子注入方法制备了纳米颗粒直径为2～4nm的nc-Si／SiO_2材料，制备的Si纳米晶颗粒周围分布着大量的非晶硅。随退火温度升高，非晶硅层减少，晶化加强。
论文制备了掺铒nc-Si／SiO_2材料。研究了材料的微观结构，并测量了样品的光致发光谱，研究了材料的微观结构和掺Er后材料发光强度随测量温度的变化。实验对材料的发光机理进行了深入的探讨，发现存在于非晶氧化硅及其界面上的光激活Er离子，通过非晶硅与纳米硅相耦合，非晶硅的存在影响了纳米硅与Er离子间的能量传递，对Polman等人的纳米硅与Er的强耦合模型提出了改进。
最后，论文初步开展了联合沉积法制备掺Er薄膜材料的工作。
With the development of optical communication and integrated optoelectronics, Er Doped Waveguide Amplifier (EDWA) has become the hotspot in the field of optical fiber communication and optoelectronics. We prepared Er-doped Al2O3 Films and Er-doped nc-SiO2 Films, and studied their characterization.
Er-doped Al2O3 Films were prepared by Ion Beam Enhanced Deposition (IBED) and Ion Implantation. After different annealing temperature, we examined the composition, surface morphology, structure and chemical value. Er3+ ions were activated gradually and photoluminescence intensity increased with the annealing temperature. Annealed at 700℃, refractive index and surface roughness reached the least, which affected optical transmission spectra, optical absorption loss, and photoluminescence intensity. This thesis discussed the PL mechanism.
We also prepared Er-doped nc-SiO2 Films by Ion Implantation. After different annealing temperature, the microstructure and photoluminescence were investigated. We discussed the PL mechanism in-depth, and made conclusions that Er ions lied in amorphous Si and coupled with nc-Si through a-Si, which affected the energy transfer from nc-Si to Er. We ameliorated Polman's model.
Finally, the paper developed the co-sputtering technology to prepare Er-doped films.
引文
[1] 黄德修等，全光信息网络中的某些关键半导体光电子器件，半导体学报3，2000，P209
[2] 赵玉兰等，国外光集成／光电集成技术的发展，光通信研究 5，1998，P52
[3] P. G. Kik, A. Polman, MRS Bulletin 23(4),48, April, 1998
[4] A. Polman, Appl. Phys. Rev. 1997, 82(1):1-39
[5] Ennen H et al., Appl. Phys. Lett., 1983, No43, P943
[6] J. Michel et al., J. Appl. Phys., 1991, 70(5), P2672
[7] W. J. Miniscalco, J. Lightwave Technol., 1991, No9, P234
[8] G. N. van den Hoven, E. Snoeks, A. Polman., Appl. Phys. Lett 1993, 62(24), P3065-3067
[9] G. N. van den Hoven, R. J. I. M. Koper, A. Polman. Net Optical Gain at 1.53μm in Er-doped Al_2O_3 Waveguide on Silicon Appl. Phys. Lett. 1996, 68(14):1886-1888
[10] S. Hu, Progress in Nature Science,1996,6(6), P746
[11] C. E. Chryssou et al., IEE J. Quantum Electronics, 1998,34(2),P282
[12] S. K. Lazarouk et al., Appl. Phys. Lett., 1998,73(16),P2272
[13] M. Steplkhova et al., Appl. Phys. Lett., 1999,74(4),P537
[14] D. F. de Sousa et al., J. Appl. Phys., 1999,85(5), P2502
[15] E. M. Yeatman et al., Optics Communication, 1999,164,P19
[16] D. J. Kyle etc., Nuclear Instrument and Methods in Phys. Research B, 1999,149,P447
[17] A. Kozanecki et al., J. Alloys and Compounds, 2000,300-301,P61
[18] Q. Xiang et al., Thin Solid Films,2000(370):P243
[19] C. Strohhofer et al., J. Appl. Phys., 2001, 90(9), P4314
[20] R. Serna et al., J. Appl. Phys., 2001, 90(10), P5120
[21] A. Benn, Lightwave Europe March 2002
[22] www.lightwave_europe.com
[23] http://www.169.com/
[24] 肖海波等，世界产品与技术 2003，10：49
[25] 周必忠等，光谱学与光谱分析 1994，6
[26] 雷红兵等，红外与毫米波学报 1997，1
[27] 谢大弢等，光谱学与光谱分析 1998，18(2)：177
[28] 雷红兵等，半导体学报 1998，19(5)：332
[29] 万均等，物理学报 1998，47
[30] 雷红兵等，半导体学报 1999，20(1)：67
[31] 陈维德等，发光学报 1999，20(1)：55
[32] 雷红兵等，半导体学报 2000，21(3)：232
[33] 陈维德等，半导体学报 2000，21(10)：988
[34] 巢明等，大连理工大学学报 2001，1
[35] 冉冰等，光电子．激光 2001，4
[36] Q. Y. Zhang et al. Surface and Coatings Technology, 2002(158-159):538-543
[37] P. G. Kik, A. Polman Cooperative upconversion as the gain-limiting factor in Er doped miniature Al_2O_3 optical waveguide amplifiers J. Appl. Phys 2003,93:5008-5012
[38] G. N. van den Hoven, E. Snoeks, A.Polman., J. Appl. Phys 1996, 79(3), P1258-1266
[39] Chu-Chi Ting, San-Yuan Chen J. Appl. Phys 2001, 90(11), P5564-5569
[40] Huang Lihui, Liu Xiangren, Xu Wu, et al. J. Appl. Phys 2001, 90(11), P5550-5553
[41] M. K. Smit, G. A. Acket, C. J. Van Der Laan. Al_2O_3 Films for Integrated Optics Thin Solid Films 1986,138:171
[42] 赵文军 掺Er光波导Al_2O_3薄膜的微观状态研究 大连理工大学硕士毕业论文 2000，6
[43] 朱唯干，背散射分析技术，原子能出版社，邹世昌，林成鲁译
[44] R. M. Bradley, J. M. E. Harper, D. A. Smith Theory of thin-film orientation by ion bombardment during deposition J. Appl. Phys 1986,60:4160-4164
[45] D. Dobrev, Thin Solid Films, 1982,92:41-53
[46] W. Ensinger Growth of thin films with preferential crystallographic orientation by
ion bombardment during deposition Surf. Coat. Technol 1994,65:90-105
[47] Feng Zhang, Zhihong Zheng, Xingzhao Ding et al. J. Vac. Sci. Technol. 1997(15): 1824-1827
[48] Pasquale F. D., Zoboli M. Analysis of Erbium-doped Waveguide Amplifiers by a full- Vectorial finite-element method IEEE J. Lightwave Technol., 1993,11 (10): 1565-1573
[49] M.Jimenez de Castro, R. Serna, J.A. Chaos. Influence of Defects on the Photoluminescence of Pulsed-laser Deposited Er-doped Amorphous Al_2O_3 Films Phys. Res B 2000, 166:793-797
[50] R.Serna, M.Jimenez de Castro, J. A. Chaos. the Role of Er~(3+)-Er~(3+) Separation on the Luminescence of Er-doped Al_2O_3 Films Prepared by Pulsed Laser Deposition Appl. Phys. Lett. 1999, 75(26): 4073-4075
[51] Y. Chen, M. M. Abraham. Radiation Damage in Al_2O_3 Crystals Implanted with 3.8 Mev Fe~(2+) Ions Phys. Res. B 1991, 59/60:1163-1166
[52] M.A. Marcus and A. Polman. Local Structure around Er in Silica and Sodium Silicate Glasses J. Non- Cryst. Solids 1991 (136): 260
[53] G.N. van den Hoven and A. Polman, E. Alves, M.F. da Silva, and A.A. Melo, J.C. Soares Lattice Site and Photoluminescence of Erbium Implanted in α- Al_2O_3 J. Mater. Res. 1997, 12(5): 1401-1404
[54] F. Namavar, F. Lu, Clive H. et al. Visible and infrared (1.54μm) emission From Er-implanted porous Si for photonic applications [J]. J. Elec. Mate. 1996, 25: 43-49.
[55] H. A. Lopez, P. M. Fanchet, S. Chen et al. Infrared LEDs and Microcavities based on erbium-doped silicon nanocomposites[J]. Mat. Sc. Eng. B. 2001, 81: 91-96.
[56] M. Stepikhova, W. Jantsch, G. Kocher. et al. Direct excitation spectroscopy of Er centers in porous silicon [J]. Appl. Phys. Lett. 1997, 71: 2975-2977.
[57] S. Coffa, G. Franzo, A. polman. Temperature dependence and quenching processes of the intra-4f luminescence of Er in crystalline Si [J]. Phys. Rev. B. 1994, 49: 16313-16320.
[58] M. L. Brongersma, A. Polman Tuning the emission wavelength of Si nanocrystalls
in SiO_2 by oxidation [J]. Appl. Phys. Lett. 1998, 72: 2577-2580.
[59] P.Bruesch, Th.Stockmeier, and F.stucki. Physical properties of semi-insulating polycrystalline silicon [J]. J. Appl. Phys. 1993, 73: 7677-7689.
[60] Thomas D. Chen, Marlene Platero, M. Agarwal et al. The temperature dependence of radiative and nonradiative processes at Er-O centers in Si [J]. Phys. B. 1999, 273-274: 322-325.
[61] P.G. Kik, M.L. Brongersma and A. Polmam. Strong exciton-erbium coupling in Si nanocrystal-doped SiO_2 [J]. Appl. Phys. Lett. 2000, 76: 2325-2327.
[62] www.agilent.com
[63] 林志浪，程新利，王永进等 低损耗SOI单模光波导的制备《中国激光》2004(31) 增刊：230-232
[64] 纪越峰 光波分复用系统 北京邮电大学出版社
[2] 赵玉兰等，国外光集成／光电集成技术的发展，光通信研究 5，1998，P52
[3] P. G. Kik, A. Polman, MRS Bulletin 23(4),48, April, 1998
[4] A. Polman, Appl. Phys. Rev. 1997, 82(1):1-39
[5] Ennen H et al., Appl. Phys. Lett., 1983, No43, P943
[6] J. Michel et al., J. Appl. Phys., 1991, 70(5), P2672
[7] W. J. Miniscalco, J. Lightwave Technol., 1991, No9, P234
[8] G. N. van den Hoven, E. Snoeks, A. Polman., Appl. Phys. Lett 1993, 62(24), P3065-3067
[9] G. N. van den Hoven, R. J. I. M. Koper, A. Polman. Net Optical Gain at 1.53μm in Er-doped Al_2O_3 Waveguide on Silicon Appl. Phys. Lett. 1996, 68(14):1886-1888
[10] S. Hu, Progress in Nature Science,1996,6(6), P746
[11] C. E. Chryssou et al., IEE J. Quantum Electronics, 1998,34(2),P282
[12] S. K. Lazarouk et al., Appl. Phys. Lett., 1998,73(16),P2272
[13] M. Steplkhova et al., Appl. Phys. Lett., 1999,74(4),P537
[14] D. F. de Sousa et al., J. Appl. Phys., 1999,85(5), P2502
[15] E. M. Yeatman et al., Optics Communication, 1999,164,P19
[16] D. J. Kyle etc., Nuclear Instrument and Methods in Phys. Research B, 1999,149,P447
[17] A. Kozanecki et al., J. Alloys and Compounds, 2000,300-301,P61
[18] Q. Xiang et al., Thin Solid Films,2000(370):P243
[19] C. Strohhofer et al., J. Appl. Phys., 2001, 90(9), P4314
[20] R. Serna et al., J. Appl. Phys., 2001, 90(10), P5120
[21] A. Benn, Lightwave Europe March 2002
[22] www.lightwave_europe.com
[23] http://www.169.com/
[24] 肖海波等，世界产品与技术 2003，10：49
[25] 周必忠等，光谱学与光谱分析 1994，6
[26] 雷红兵等，红外与毫米波学报 1997，1
[27] 谢大弢等，光谱学与光谱分析 1998，18(2)：177
[28] 雷红兵等，半导体学报 1998，19(5)：332
[29] 万均等，物理学报 1998，47
[30] 雷红兵等，半导体学报 1999，20(1)：67
[31] 陈维德等，发光学报 1999，20(1)：55
[32] 雷红兵等，半导体学报 2000，21(3)：232
[33] 陈维德等，半导体学报 2000，21(10)：988
[34] 巢明等，大连理工大学学报 2001，1
[35] 冉冰等，光电子．激光 2001，4
[36] Q. Y. Zhang et al. Surface and Coatings Technology, 2002(158-159):538-543
[37] P. G. Kik, A. Polman Cooperative upconversion as the gain-limiting factor in Er doped miniature Al_2O_3 optical waveguide amplifiers J. Appl. Phys 2003,93:5008-5012
[38] G. N. van den Hoven, E. Snoeks, A.Polman., J. Appl. Phys 1996, 79(3), P1258-1266
[39] Chu-Chi Ting, San-Yuan Chen J. Appl. Phys 2001, 90(11), P5564-5569
[40] Huang Lihui, Liu Xiangren, Xu Wu, et al. J. Appl. Phys 2001, 90(11), P5550-5553
[41] M. K. Smit, G. A. Acket, C. J. Van Der Laan. Al_2O_3 Films for Integrated Optics Thin Solid Films 1986,138:171
[42] 赵文军 掺Er光波导Al_2O_3薄膜的微观状态研究 大连理工大学硕士毕业论文 2000，6
[43] 朱唯干，背散射分析技术，原子能出版社，邹世昌，林成鲁译
[44] R. M. Bradley, J. M. E. Harper, D. A. Smith Theory of thin-film orientation by ion bombardment during deposition J. Appl. Phys 1986,60:4160-4164
[45] D. Dobrev, Thin Solid Films, 1982,92:41-53
[46] W. Ensinger Growth of thin films with preferential crystallographic orientation by
ion bombardment during deposition Surf. Coat. Technol 1994,65:90-105
[47] Feng Zhang, Zhihong Zheng, Xingzhao Ding et al. J. Vac. Sci. Technol. 1997(15): 1824-1827
[48] Pasquale F. D., Zoboli M. Analysis of Erbium-doped Waveguide Amplifiers by a full- Vectorial finite-element method IEEE J. Lightwave Technol., 1993,11 (10): 1565-1573
[49] M.Jimenez de Castro, R. Serna, J.A. Chaos. Influence of Defects on the Photoluminescence of Pulsed-laser Deposited Er-doped Amorphous Al_2O_3 Films Phys. Res B 2000, 166:793-797
[50] R.Serna, M.Jimenez de Castro, J. A. Chaos. the Role of Er~(3+)-Er~(3+) Separation on the Luminescence of Er-doped Al_2O_3 Films Prepared by Pulsed Laser Deposition Appl. Phys. Lett. 1999, 75(26): 4073-4075
[51] Y. Chen, M. M. Abraham. Radiation Damage in Al_2O_3 Crystals Implanted with 3.8 Mev Fe~(2+) Ions Phys. Res. B 1991, 59/60:1163-1166
[52] M.A. Marcus and A. Polman. Local Structure around Er in Silica and Sodium Silicate Glasses J. Non- Cryst. Solids 1991 (136): 260
[53] G.N. van den Hoven and A. Polman, E. Alves, M.F. da Silva, and A.A. Melo, J.C. Soares Lattice Site and Photoluminescence of Erbium Implanted in α- Al_2O_3 J. Mater. Res. 1997, 12(5): 1401-1404
[54] F. Namavar, F. Lu, Clive H. et al. Visible and infrared (1.54μm) emission From Er-implanted porous Si for photonic applications [J]. J. Elec. Mate. 1996, 25: 43-49.
[55] H. A. Lopez, P. M. Fanchet, S. Chen et al. Infrared LEDs and Microcavities based on erbium-doped silicon nanocomposites[J]. Mat. Sc. Eng. B. 2001, 81: 91-96.
[56] M. Stepikhova, W. Jantsch, G. Kocher. et al. Direct excitation spectroscopy of Er centers in porous silicon [J]. Appl. Phys. Lett. 1997, 71: 2975-2977.
[57] S. Coffa, G. Franzo, A. polman. Temperature dependence and quenching processes of the intra-4f luminescence of Er in crystalline Si [J]. Phys. Rev. B. 1994, 49: 16313-16320.
[58] M. L. Brongersma, A. Polman Tuning the emission wavelength of Si nanocrystalls
in SiO_2 by oxidation [J]. Appl. Phys. Lett. 1998, 72: 2577-2580.
[59] P.Bruesch, Th.Stockmeier, and F.stucki. Physical properties of semi-insulating polycrystalline silicon [J]. J. Appl. Phys. 1993, 73: 7677-7689.
[60] Thomas D. Chen, Marlene Platero, M. Agarwal et al. The temperature dependence of radiative and nonradiative processes at Er-O centers in Si [J]. Phys. B. 1999, 273-274: 322-325.
[61] P.G. Kik, M.L. Brongersma and A. Polmam. Strong exciton-erbium coupling in Si nanocrystal-doped SiO_2 [J]. Appl. Phys. Lett. 2000, 76: 2325-2327.
[62] www.agilent.com
[63] 林志浪，程新利，王永进等 低损耗SOI单模光波导的制备《中国激光》2004(31) 增刊：230-232
[64] 纪越峰 光波分复用系统 北京邮电大学出版社