空间用微波多功能MMIC研究
详细信息    本馆镜像全文|  推荐本文 |  |   获取CNKI官网全文
摘要
本篇论文主要的研究对象是x波段中8.5~10.5GHz多功能MMIC,是有源相控阵雷达中的T/R组件的核心部件之一。笔者首先分析、总结了多功能MMIC利与弊、多功能MMIC的发展趋势;其次完成了多功能MMIC方案论证,最终确定运用Agilent ADS软件、GaAs材料、HEMT管芯以及TriQuint Semiconductor所提供的0.25μm xKu pHEMT 3MI Process来实现多功能MMIC,由于在短时间内未能获取0.25μm xKu pHEMT 3MI Process的PDK文件,所以笔者在本篇论文中,将选取与该工艺线相近的0.25μm GaAs HEMT DemoKit模型库作为替代品完成多功能MMIC设计;接着在完成对Demokit-HEMT开关特性(串联型、Single-HEMT、Twins-HEMT三种拓扑结构)研究的基础上,完成了多功能MMIC中主要组成部分:五位数字衰减器、五位数字移相器和微波小信号放大器的结构合理性验证;最后根据现有的相关研究成果,探索性的对GaAs MMIC空间辐射效应:空间辐射环境与空间辐射源;电离总剂量辐射效应、位移损伤效应、单粒子效应;半导体器件的抗辐射屏蔽加固技术做了一些粗浅的分析、总结。在附录中笔者调研了全球目前主要的Opening GaAs Foundry Service。
Multifunctional MMIC, as one of the hot research topics in Microwave and Millimeterwave IC field, has enjoyed a wide application in modern radar engineering.
     This paper starts by reviewing the history and development of MMIC, as well as, its statesof art, also containing the brief introduction of its most optimal applicable domain—ActivePhased Array Rader. Next, this paper surveys into Demokit HEMT's switch characteristicand all notable MMIC structures for attenuator, phase shifter and amplifier, and proposes aframework for 5-bit attenuator MMIC, 5-bit phase shifter MMIC and gain amplifier MMIC,respectively, and all of them are employed in the x band. After the study and analysis ofkey techniques, above mentioned, this paper by means of the Agilent's Advanced DesignSystem, which is widely used as Microwave and Millimeter wave EDA environment,demonstrates the structural rationality of 5-bit attenuator MMIC, 5-bit phase shifter MMICand gain amplifier MMIC, respectively. In order to keep integrality of this topic, the drivecircuits of phase shifter and attenuator, as well as, the bias control circuit of the gainamplifier. Following GaAs MMIC study, the research is carried on to the GaAs MMICreliability assurance for space applications, including Radiation Environments and Sources,Ionizing Radiation Effects, Displacement Damage Effects, Single Event Effects, RadiationShielding in Semiconductor Devices. In order to maintain the integrality of the GaAsMMIC research in this dissertation, author both describes general arts of GaAs MMICLayout and investigates, along with disposes of the comprehensive information intotabulations, the main Opening GaAs Foundry Services all over the world, at the end of thispaper.
引文
1.高建军.场效应管射频微波建模技术.第一版.北京:电子工业出版社,2007
    2.李伟华,孙伟锋译.集成电路版图基础——使用指南.第一版.北京:清华大学出版社,2006
    3.杨芳,翁木云等译.现代无线系统射频电路实用设计——卷Ⅱ:有源电路与系统.第一版.北京:电子工业出版社,2006
    4.薛正挥,杨仕明,李伟明,任武.微波固态电路.第一版.北京:北京理工大学出版社,2004
    5.范寿康,卢春兰,李平辉.微波技术与微波电路.第一版.北京:机械工业出版社,2003
    6.《中国集成电路大全》编委会。微波集成电路.北京:国防工业出版社,1995
    7.顾继慧.微波技术.第一版.北京:科学出版社,2004
    8.康华光,陈大钦等.电子技术基础(模拟部分).第一版.北京:高等教育出版社,1998
    9.漆德宁主编.模拟电子技术.第一版.安徽:中国科学技术大学出版社,2000
    10.谢嘉奎,宣月清,冯军.电子线路(非线性部分).第一版.北京:高等教育出版社,1999
    11.王子宇,张肇仪等译.射频电路设计.第一版.北京:电子工业出版社,2002
    12.李效白.砷化镓微波场效应品体管及其集成电路。第一版。北京:科学出版社,1998
    13.姚立真.可靠性物理.第一版.北京:电子工业出版社,2001
    14.孔学东,恩云飞.电子元器件失效性分析与典型案例.第一版.北京:国防工业出版社,2006
    15.吴群.微波工程技术.第一版.哈尔滨:哈尔滨工业大学出版社,2005
    16.吴启迪,乔非,李莉,王遵彤.半导体制造系统调度。第一版.北京:电子工业出版,2006
    17. Christopher Saint, Judy Saint. IC Layout Basics: A Practical Guide. 1st ed. McGraw-Hill Companies, 2002
    18. Christopher Saint, Judy Saint. 1C Mask Design: Essential Layout Technology. I st ed. McGraw-Hill Companies, 2002
    19. Sami Franssila. Introduction to Microfabrication. 1st ed. John Wiley & Sons, Inc, 2006
    20. Kayak S, Ponchak G, Shaw R. GaAs MMIC reliability assurance guideline for space applications. 1st ed. The Institution of Electrical Engineers, 2001
    21. lan Robertson, Stepan Lucyszyn. RFIC and MMIC Design and Technology. 1st ed. Colifornia:JPI.Publication, 1996
    22.罗小勇.pHEMT MMIC宽带单片功率放大器设计研究.电子科技大学硕士学位论文.2005
    23.牛立杰.基于MCM技术的相控阵雷达T/R组件.电子科技大学硕士学位论文.2004
    24.陈强.Ka波段T/R组件的研制.电子科技大学硕士学位论文.2005
    25. Aerospace & defense Integrated Circuits. PDE M/A-COM
    26. Microwave and millimeter wave IC products for military and commercial radar. PDF. M/A-COM
    27. MAMFGM0001-DIE.PDF. M/A-COM
    28. MAMF-000002-DIE000.PDF.M/A-COM
    29. MAMF-000003-DIE000.PDF.M/A-COM
    30. MAMF-000004-DIE000.PDF.M/A-COM
    31.李涵秋.微波芯片及模块技术创新发展战略研究.电子机械工程.2001(5):2-17
    32. Advanced Design System 2004A-What's New. PDF. Agilent Technologies.
    33. Advanced Design System 2005-What's New. PDF. Agilent Technologies.
    34. Advanced Design System 2006-What's New. PDE Agilent Technologies.
    35. Agilent EEsof EDA Advanced Design System. PDF. Agilent Technologies.
    36. Agilent EEsof EDA Design Technology Advanced Design System. PDF. Agilent Technologies.
    37. Industry-Leading MMIC Design Solutions. PDF. Agilent Technologies.
    38. Advanced Design System Capability Overview. PDF. Agilent Technologies.
    39. XA1000. PDF. Mimix Broadband.
    40. 10004565 DC 8 GHz 6-Bit Digital GaAs Attenuator MMIC. PDF. Mimix Broadband.
    41. Masatoshi Nakayama, Kazutomi Mori, Noriko Ogata, Yasuo Mitsui, Hisahiro Yuura, Yutaka Yoshii, Kazuya Yamamoto, Kosei Maemura, Osami Ishida. A 1.9GHz SINGLE-CHIP RF FRONT-END GaAs MMIC FOR PERSONAL COMMUNICATIONS. IEEE. 1996: 69-72
    42. J. C. SARKISSIAN, M. DELMOND, E. LAPORTE, E. ROGEAUX, M. SOULARD. A KU-BAND 6-BIT DIGITAL ATTENUATOR WITH INTEGRATED SERIAL TO PARALLEL CONVERTER. IEEE. 1999: 1915-1918
    43. J. Bayruns, P. Wallace, N. Scheinberg. A MONOLITHIC DC-1.6GHz DIGITAL ATTENUATOR. IEEE. 1989: 1295-1298
    44. Dave Krafcsik, Fazal All, Steve Bishop, Broadband, Low-Loss 5- and 6-Bit Digital Attenuators. IEEE. 1995: 1627-1630
    45. Inkwon Ju, Youn-Sub Noh and In-Bok Yom. Ultra Broadband DC to 40 GHz 5-Bit pHEMT MMIC Digital Attenuator.
    46. B. Lefebvre, A. Bessemoulin, H. Amara, R. Sevin, P. Quentin. High dynamic range, triple gate-based compact DC-40 Hz variable attenuator MMIC for Ka-band variable gain amplifier ICs. IEEE. 2003: 135-138
    47. A. K. Anderson, J. S. Joshi. GENERIC CONSTANT PHASE DIGITAL ATTENUATORS. IEEE. 1994: 11/1-11/7
    48. Brian Khabbaz, Anthony Pospishil, H. P. Singh. DC-to-20-GHz MMIC Multibit Digital Attenuators with On-Chip TTL Control. IEEE. 1992: 1457-1462
    49. Finbarr J. McGrath, Russ G. Pratt. An Ulter Broadband DC-12GHz 4-Bit GaAs Monolithic Digital Attenuator. IEEE. 1991: 247-250
    50. MAPCGM0004-DIE.PDF.M/ACOM.
    51. MAPCGM0005-DIE.PDF.M/ACOM.
    52. TGP6336-EEU.PDF.TriQuint Semiconductor.
    53. TGP2103.PDF.TriQuint Semiconductor.
    54. M.J.Schindler, M.E.Miller. A 3 Bit K/Ka Band MM1C Phase Shifter. IEEE. 1998:95-98
    55. Shen Ya, Chert Jiyi, Chen Tangsheng, Chen Xiaojian, Lin Jinting. A COMPACT L-BAND FOUR-BIT MMIC PHASE SHIFTER. IEEE. 1998:242-244
    56. Charles F. Campbell, Steven A.Brown. A Compact 5-Bit Phase-Shifter MMIC for K-Band Satellite Communication Systems. IEEE. 2000:217-220
    57. Shen Ya, Chen Tangsheng, Lin lanfeng, Chen Xiaojian, Lin Jinting. A X-BAND FIVE-BIT MMIC PHASE SHIFTER. IEEE. 2000:200-202
    58. Ahmed I.Khalil, Mustapha Mahfoudi, Frank Traut, Mitch Shifrin, Joseph Chavez. A X-Band 4-Bit mHEMT Phase shifter. IEEE. 2005:53-56
    59.沈亚,陈继义,陈堂胜,陈效建,林金庭.S波段单片四位数控移相器.固体电子学研究与进展.1999(2):139-143
    60.沈亚,陈堂胜,林金庭,陈效建.X波段五位、C波段六位砷化镓单片数字移相器.固体电子学研究与进展.1999(3)
    61.戴永胜,陈堂胜,岑元飞,俞土法,李辉,陈继义,李拂晓,陈效建,林金庭.二种新颖的适合不同控制信号的超宽带单片移相器.固体电子学研究与进展.2000(2)
    62.戴永胜,陈堂胜,岑元飞,俞土法,李辉,李拂晓,陈效建.数字/模拟兼容的超宽带90°、45°、22.5°、11.25°单片移相器.固体电子学研究与进展.2000(3)
    63.戴永胜,陈堂胜,岑元飞,俞土法,陈继义,李拂晓,陈效建.一种新颖的多倍频程180°GaAs MMIC数字移相器.固体电子学研究与进展.2000(2)
    64.戴永胜,陈堂胜,岑元飞,俞土法,李辉,陈继义,李拂晓,陈效建,林金庭.一种新颖的多倍频程GaAs单片五位数字移相器.固体电子学研究与进展.2000(2)
    65.申华军,杨瑞霞,王同祥,吴阿惠,谢媛媛,邱旭.X波段GaAs单片五位数字移相器.电子器件.2003(2):299-232
    66.周志鹏,杜小辉,代合鹏.GaAs单片移相器设计.微波学报.2005(4).54-57
    67.谢媛媛,高学邦,方园,刘文杰,任怀龙.数控单片移相器的CAD.半导体技术.2006(6):459-459
    68.刘登学.S波段MCM四位数字移相器开关组件的研究.电子科技大学硕士论文,2005
    69.何钧.Ku波段高功率放大器设计.南京理工大学硕士论文.2006
    70.余旭明.微波T/R组件设计.南京理工大学硕士论文.2006
    71.周惠忠.低噪声微波接收系统前端设计.南京理工大学硕士论文.2006
    72.王晓江.微波通信系统发射机技术研究.南京理工大学硕士论文.2006
    73.朱丹.x波段单片低噪声放大器的研究.南京理工大学硕士论文.2006
    74. Using Advanced Design System to Design an MMIC Amplifier. PDF. Agilent Technologies.
    75.祝加秀.4-8GHz低噪声小信号放大器的研制。电子科技大学硕士论文,2004
    76.兰鹍.X波段接收前端某些器件的设计与研究.电子科技大学硕士论文,2005
    77.许向前.微波限幅放大器技术研究.电子科技大学硕士论文,2006
    78.郑磊.微波宽带低噪声放大器的设计,电子科技大学硕士论文,2006
    79.陈春红.V波段低噪声放大器的研制.南京理工大学硕士论文.2004
    80.刘抒民.V波段低噪声放大器的设计.南京理工大学硕士论文.2004
    81. Drivers for GaAs FET Switches And Digital Attenuators. M/ACOM Application Notes.
    82. OPA335.PDF. Texas Instruments.
    83.NC2039C/F FET驱动器.PDF.华北集成电路设计有限公司.
    84. Bias Conditions for MMIC Amplifiers. Mimix Broadband Application notes.
    85. Radiation Hard GaAs High Electron Mobility Transistor[56]. [75]Inventors: Michael J.O'Loughlin, Irvine, Richard J,Krantz, Torrance; Walter L. Bloss, Ⅲ, Rancho Palos Verdes, all of Calif. United States Patent[19] O'Loughlin et al.[11]Patent Number: 5,028,968. [21]Appl.No.:460,206. [22]Filed: Jan.2,1990. [45]Date of Patent: Jul. 2, 1991
    86. S. A. Kayali, A.H.Johnston. Reliability and Radiation Hardness of Compound Semiconductors. Jet Propulsion Laboratory California Institute of Technology, 2001: 1-13
    87. R.Anholt, J. Gillespie, R.Dettmer, J.Sewell, C.Bozada, R. Bhattacharya, H. Evans. Testing Radiation damage in Ⅲ-Ⅴ Transistors. 1999 GaAs Mantech.
    88.李致远.半导体器件辐射效应及抗辐射加固.现代电子技术.2006(19):138-141
    89.姜秀杰,孙辉先,王志华,张利.航天电子系统中电子元器件选用的途径分析.电子器件.2005(1):38-43
    90.徐加强,王传珊.空间电子辐照下半导体器件的抗辐射屏蔽优化.上海大学学报(自然科学版).2003(3):259-262
    91.高欣,杨生胜,牛小乐,王云飞.空间辐射环境与测量真空与低温.真空与低温.2007(1):41-47
    92.王同权,沈永平,王尚武,张树发.空间辐射环境中的辐射效应.国防科技大学学报.1999(4):36-39
    93.于庆奎,赵大鹏,唐民.空间辐射粒子引起单粒子翻转率预计.中国空间科学技术.1998(4):56-62
    94.李世清,鄢和平.空间辐射效应.核物理动态.1995(3):40-42
    95.胡刚毅.微电子器件的抗辐射加固和高可靠技术.微电子学.2003(3):224-230
    96.何君.微电子器件的抗辐射加固技术.半导体情报.2001(2):19-23
    97.宋明龙,朱海元,章生平.卫星抗辐射加固技术.上海航天.2001(2):56-60
    98.朱文明.卫星系统抗辐射加固.航天器工程.1993(1):20-29
    99.姜秀杰,王志华,孙辉先,辛敏成.星载商用塑封器件存在的问题及其对策.电子器件.2006(4):1363-1371
    100.螺纹芸,王朝壮,贺新福,樊胜,黄小龙,王传珊.中能质子在Si和GaAs中导致的非电离能损研究.高能物理与核物理.2006(11):1088-1090
    101.黄绍艳,唐本奇,王桂珍,王祖军,刘敏波.中子对Si及GaAs半导体材料位移损伤的数值计算.核电子学与探测技术.2005(4):376-379
    102.王桂珍,姜景和,张正选,龚建成.总剂量辐射效应中的辐射源及剂量.测量微电子学.2001(3):168-172
    103. Kayak S, Ponchak G, Shaw R. GaAs MMIC reliability assurance guideline for space applications. 1st ed. Colifornia: JPI. Publication. 1996
    104. Gallium Arsenide Products Designers' Information. TriQuint Semiconductor Texas. http://www.triquint.com/.
    105.宋增超.GaAs单片微波集成电路(MMIC)失效分析和评价技术.北京工业大学硕土学位论文.2003
    106.侯翠群.厚膜混合集成电路可靠性分析与提高.南京理工大学硕士论文.2001
    107.王占国.半导体材料研究的新进展.半导体技术.2002(3):8-14
    108.吴海东,庄志强,莫郁薇等.GaAs MMIC可靠性研究与进展.电子产品可靠性与环境试验.2001(1):29-33
    109. K.Yajima, H. Sasaki, M. Komaru, T. Katoh, T. Kashiwa, T. Asano, K. Mizuguchi. Radiation Hardness of Pseudomorphic HEMT and Dual-Gate GaAs MESFET MMICs. IEEE. 1998: 114-119
    110. Peter KordoS. NEW TRENDS IN GaAs-BASED DEVICES FOR GENERATION OF MILLIMETER AND SUBMILLIMETER WAVES. MSMW'98 Symposium Proceedings. 1998: 44-49
    111. Bongim Jun, S. Subramanian. Carrier-Removal Rate and Mobility Degradation in Heterojunction Field-Effect Transistor Structures. IEEE. 2002: 3222-3329
    112. Konnakova R. V, Milenin V.V, Rengevych O. E, Stovpovoy M. A. The radiation Firmness of The GaAs-AlGaAs HEMT Ohmic Contacts. IEEE. 2001: 436

© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号

地址:北京市海淀区学院路29号 邮编:100083

电话:办公室:(+86 10)66554848;文献借阅、咨询服务、科技查新:66554700