单片式电源管理芯片设计
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摘要
电源管理芯片是指将电源有效分配给系统不同组件的管理芯片,通过芯片管理降低组件闲置时的能耗,为整个系统节能。电源管理芯片在邮电通信、仪器仪表、工业设备、消费电子等诸多领域有着广泛的应用,为系统提供稳定、高效的动力并为节能作出了重要的贡献。
BCD(Bipolar CMOS DMOS)工艺是把双极器件,CMOS器件和DMOS功率器件同时制作在同一芯片上。它综合了双极器件高跨导、强负载驱动能力,CMOS器件高集成度、低功耗,和功率器件大功率的优点,所以BCD工艺是最符合功率驱动电路的工艺。
论文主要研究基于BCD工艺开发及单片高压开关电源电路的实现及优化。在工艺及器件方面—建设一条光刻掩膜层次少、700v/40v/5v器件兼容性好、集成具有低比导通电阻700v LDMOS的稳定工艺平台,同时验证LIGBT的开关频率和导通功耗关系以满足在不同功率运用下具有最优频率和功耗折中关系的功率管相匹配;在控制电路方面—利用合作开发的工艺平台设计一款具有AC-DC转换,可实现恒流及恒压输出的电源管理芯片,该芯片的控制部分具有时序、PSM(跨周期调制)控制、各种故障保护、回路调节、限流调节、功率管开关控制等完备功能。根据论文的设计要求进行器件选定和设计。确定整体工艺流程后通过MEDICI及Tsuprem-4分别对各选定器件进行工艺器件联合仿真,通过仿真得出结构分布和尺寸大小。器件流片、测试后,提取器件参数以及建立器件模型,然后进行开关电源电路设计和仿真。该芯片包含了带隙基准电压源、电流极限比较器、5.8v调整器、振荡器等低压控制子模块,来控制高压器件的开关状态。
在电路设计的过程中,需先对国外较新的单片开关电源进行提取,再划分电路的功能块并分析和改善各功能块的功能。在功能清晰的基础上用Hspice对电路模拟仿真及完成容差分析。用Cadence完成电路的版图设计。最后采用开发的BCD工艺投片生产并封装、测试。
Power management chip is the effective distribution of the power supply to different components of the system, power management by reducing components power consumption when components idle which lead to save power for the entire system. Power management chip has wide application in many fields for example in the post and telecommunications, instrumentation, industrial equipment, consumer electronics. Power management chip provide a stable and efficient power and to make an important contribution to energy conservation.
BCD (Bipolar CMOS DMOS) process is the Bipolar devices, CMOS and DMOS power devices while the devices integrated on the same chip. It combines the high transconductance ,high load drive capabilityof bipolar devices with CMOS devices which have high integration, low power consumption characteristics. This process also have high power advantages. So the BCD process is most suitable the power management chip.
The main subject of this research is based on single-chip high-voltage BCD process development and implementation of switching power supply circuit. In terms of construct a stable process platform with less lithography mask levels, 700v/40v/5v devices compatibility, integration a low on-resistance 700v LDMOS device. And to verify the LIGBT turn-on switching frequency and power consuption relations in order to meet the under use of different power with optimal trade-off between frequency and power consuption to match the power management .
In the control circuit,use the cooperative development of the process platform to design a AC-DC converter.Power management chip has complete functions such as : constant flow and constant voltage output control , timing control, PSM (pulse-cycle Skip Modulation) control, a variety of fault protection, circuit adjustment, current limit adjustment, power device switiching control.
According to project design requirements for device selection and design determine the overall process. Use MEDICI and Tsuprem-4 software to complete the process and device co-simulation. Obtained the device structure and size by simulation . Tape out device and test. Extraction of device parameters and the establishment of device models the models use for switching power supply circuit design and simulation. The chip contains a band gap voltage reference, current limit comparator, 5.8v regulator ,oscillator, and so on, to control the status of the high voltage switching device.Complete circuit simulation using Hspice and complete circuit layout using Cadence. Finally use the cooperation development BCD process to flow the chip and package, test.
BCD(Bipolar CMOS DMOS)工艺是把双极器件,CMOS器件和DMOS功率器件同时制作在同一芯片上。它综合了双极器件高跨导、强负载驱动能力,CMOS器件高集成度、低功耗,和功率器件大功率的优点,所以BCD工艺是最符合功率驱动电路的工艺。
论文主要研究基于BCD工艺开发及单片高压开关电源电路的实现及优化。在工艺及器件方面—建设一条光刻掩膜层次少、700v/40v/5v器件兼容性好、集成具有低比导通电阻700v LDMOS的稳定工艺平台,同时验证LIGBT的开关频率和导通功耗关系以满足在不同功率运用下具有最优频率和功耗折中关系的功率管相匹配;在控制电路方面—利用合作开发的工艺平台设计一款具有AC-DC转换,可实现恒流及恒压输出的电源管理芯片,该芯片的控制部分具有时序、PSM(跨周期调制)控制、各种故障保护、回路调节、限流调节、功率管开关控制等完备功能。根据论文的设计要求进行器件选定和设计。确定整体工艺流程后通过MEDICI及Tsuprem-4分别对各选定器件进行工艺器件联合仿真,通过仿真得出结构分布和尺寸大小。器件流片、测试后,提取器件参数以及建立器件模型,然后进行开关电源电路设计和仿真。该芯片包含了带隙基准电压源、电流极限比较器、5.8v调整器、振荡器等低压控制子模块,来控制高压器件的开关状态。
在电路设计的过程中,需先对国外较新的单片开关电源进行提取,再划分电路的功能块并分析和改善各功能块的功能。在功能清晰的基础上用Hspice对电路模拟仿真及完成容差分析。用Cadence完成电路的版图设计。最后采用开发的BCD工艺投片生产并封装、测试。
Power management chip is the effective distribution of the power supply to different components of the system, power management by reducing components power consumption when components idle which lead to save power for the entire system. Power management chip has wide application in many fields for example in the post and telecommunications, instrumentation, industrial equipment, consumer electronics. Power management chip provide a stable and efficient power and to make an important contribution to energy conservation.
BCD (Bipolar CMOS DMOS) process is the Bipolar devices, CMOS and DMOS power devices while the devices integrated on the same chip. It combines the high transconductance ,high load drive capabilityof bipolar devices with CMOS devices which have high integration, low power consumption characteristics. This process also have high power advantages. So the BCD process is most suitable the power management chip.
The main subject of this research is based on single-chip high-voltage BCD process development and implementation of switching power supply circuit. In terms of construct a stable process platform with less lithography mask levels, 700v/40v/5v devices compatibility, integration a low on-resistance 700v LDMOS device. And to verify the LIGBT turn-on switching frequency and power consuption relations in order to meet the under use of different power with optimal trade-off between frequency and power consuption to match the power management .
In the control circuit,use the cooperative development of the process platform to design a AC-DC converter.Power management chip has complete functions such as : constant flow and constant voltage output control , timing control, PSM (pulse-cycle Skip Modulation) control, a variety of fault protection, circuit adjustment, current limit adjustment, power device switiching control.
According to project design requirements for device selection and design determine the overall process. Use MEDICI and Tsuprem-4 software to complete the process and device co-simulation. Obtained the device structure and size by simulation . Tape out device and test. Extraction of device parameters and the establishment of device models the models use for switching power supply circuit design and simulation. The chip contains a band gap voltage reference, current limit comparator, 5.8v regulator ,oscillator, and so on, to control the status of the high voltage switching device.Complete circuit simulation using Hspice and complete circuit layout using Cadence. Finally use the cooperation development BCD process to flow the chip and package, test.
引文
[1]全球电源管理IC的发展趋势.中国电源信息网
[2]李文才,鲁传峰.新一代开关电源发展趋势.能源技术与管理,2008,5:134-135
[3]中国工业用开关电源市场调查报告.电源世界,2007,(6):64-65
[4]沙占友.新型单片开关电源的设计与应用.北京:电子工业出版社,2001
[5]陈坚.电力电子学.北京:高等教育出版社,2002,8(2):57
[6]王志强.开关电源设计.北京:电子工业出版社,2006,2(2):71
[7]张占松,蔡宣三.开关电源的原理与设计.2001:7
[8]李小锋.电流检测HEXFET在电流控制型开关电源中的应用研究.火控雷达技术,1998,6(27):42-44
[9] Ph. Givelin, M.Bafleur. Application of a CMOS current mode approach to on-chip current sensing in smart power circuits. 1995 IEEE Proc-Circuits Drvires Syst,Vol.142:357-363
[10] Stephen A. Campbell, The Science and Engineering of Microelectronic Fabrication (曾莹,严利人,王纪民等译) .北京:电子工业出版社,2003
[11]王阳元,关旭东,马俊如,集成电路工艺基础.北京:高等教育出版社,1988
[12] Bruno Murari.Smart Power Technology and the Evolution from Protective Umbrella to Complete System. IEDM Tech. Dig., pp.9-15, 1995
[13] C.Contiero.BCD Technology for VLSI Smart Power ICs. Proc. ESSDERC, pp.791-794, 1995
[14] Koishikawa,Y.,Takahashi,M.,Yanagigawa,H.,et al. DoubleRESURF Device Technology for Power ICs. NEC Res. Dev., 4, pp.35, 1994
[15]洪乃刚.电力电子技术基础.北京:清华大学出版社,2008
[16]罗萍,李强.新型开关电源的关键技术.微电子学,2005,2(35):63-64
[17]王英.离线式单片AC/DC开关电源集成电路的设计:[硕士学位论文].杭州:浙江大学,2006
[18]陈星弼.功率MOSFET与高压集成电路.南京:东南大学出版社,1990
[19] Bo Zhang.Power Semiconductor Devices and Smart Power Ics.成都:电子科技大学出版社, 2001
[2]李文才,鲁传峰.新一代开关电源发展趋势.能源技术与管理,2008,5:134-135
[3]中国工业用开关电源市场调查报告.电源世界,2007,(6):64-65
[4]沙占友.新型单片开关电源的设计与应用.北京:电子工业出版社,2001
[5]陈坚.电力电子学.北京:高等教育出版社,2002,8(2):57
[6]王志强.开关电源设计.北京:电子工业出版社,2006,2(2):71
[7]张占松,蔡宣三.开关电源的原理与设计.2001:7
[8]李小锋.电流检测HEXFET在电流控制型开关电源中的应用研究.火控雷达技术,1998,6(27):42-44
[9] Ph. Givelin, M.Bafleur. Application of a CMOS current mode approach to on-chip current sensing in smart power circuits. 1995 IEEE Proc-Circuits Drvires Syst,Vol.142:357-363
[10] Stephen A. Campbell, The Science and Engineering of Microelectronic Fabrication (曾莹,严利人,王纪民等译) .北京:电子工业出版社,2003
[11]王阳元,关旭东,马俊如,集成电路工艺基础.北京:高等教育出版社,1988
[12] Bruno Murari.Smart Power Technology and the Evolution from Protective Umbrella to Complete System. IEDM Tech. Dig., pp.9-15, 1995
[13] C.Contiero.BCD Technology for VLSI Smart Power ICs. Proc. ESSDERC, pp.791-794, 1995
[14] Koishikawa,Y.,Takahashi,M.,Yanagigawa,H.,et al. DoubleRESURF Device Technology for Power ICs. NEC Res. Dev., 4, pp.35, 1994
[15]洪乃刚.电力电子技术基础.北京:清华大学出版社,2008
[16]罗萍,李强.新型开关电源的关键技术.微电子学,2005,2(35):63-64
[17]王英.离线式单片AC/DC开关电源集成电路的设计:[硕士学位论文].杭州:浙江大学,2006
[18]陈星弼.功率MOSFET与高压集成电路.南京:东南大学出版社,1990
[19] Bo Zhang.Power Semiconductor Devices and Smart Power Ics.成都:电子科技大学出版社, 2001