化合物半导体负阻器件模拟、设计及其应用的研究
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摘要
异质结双极晶体管(Heterojunction Bipolar Transistor简称HBT)是异质结电子器件重要的一种。而微分负阻异质结晶体管(NDR HBT)为三端负阻器件,具有负阻、双稳和自锁等特性,备受关注。早在1951年,肖克莱就提出了异质结双极晶体管的概念。1957年,Kroemer又比较系统地提出了异质结双极晶体管的理论,从而引起了人们的极大兴趣。1972年,由于化合物半导体工艺的发展,开始有异质结晶体管的报道,与此同时,硅材料的HBT也在研制中。十几年前第一只多晶硅发射极晶体管问世,由于硅上生长了GaAs技术和SiGe合金技术的发展,又引起了新的HBT的结构的出现,HBT解决了发射效率和基区电阻之间在基区掺杂问题上呈现出的矛盾,使双极器件的发展向前推进了一大步;另一方面,很早就有人发现了Ⅲ/Ⅴ族化合物HBT的输出特性曲线在大电流和高功率输出时,呈现负阻现象。这种现象是高功率温升和电流增益负温度系数引起的。
共振隧穿器件(Resonant Tunneling Device)是基于量子隧穿现象的一种负阻器件,它具有响应速度快、工作频率高、低电压、低功耗和多功能等特性,令人瞩目。以两端负阻器件RTD为例,其峰谷间转换频率理论预计可达1.5～2.5THz,开关时间达1.7ps;完成一个异或(XOR)逻辑功能,TTL电路需33个器件,CMOS需16个器件,而RTD只需4个器件。利用这些特点,RTD可在多态存贮、A/D转换、多值逻辑、分频、倍频等方面得到广泛的应用。由于NDRHBT和RTD器件快速发展和良好的应用前景,对两、三端负阻器件及应用显得越来越迫切。本论文从NDRHBT和RTD的设计理论、材料设计和制备、器件结构和工艺的设计、NDR HBT和RTD测试和分析方法、以及相关器件的模拟、NDR HBT应用电路等方面,对两、三端负阻器件进行了深入研究。
主要成果如下:
1、设计、研制出具有一定水平的InGaAs/GaAs微分负阻异质结双极晶体管。并且,系统地总结出有关NDR HBT的设计理论和实践的经验。
2、对两端RTD的温度效应进行了测量和定性分析,认为其是一种本征效应。
3、对RTD直流、双稳特性和电路特性进行了测试和分析。对NDR HBT的应用电路—神经元和柔性电路的版图、工艺和材料结构进行了设计和研究。对NDR HBT器件模拟进行了研究。
Heterojunction Bipolar Transistor (HBT) is one of important heterojunction electronics devices. And NRD HBT is the three terminal negative differential resistance device and has such characteristics as the negative resistance, bi-stability and self latch and so on, so people give it many attentions. As early as the year of 1951, Xiao Kelai had brought up the conception of HBT. In 1957, Kroemer had systematically brought up the theories for HBT again, so aroused people' s biggest interests. In 1972, for the development of process of compound semiconductor, there were some reports about HBT begin-to appear, at the same time, the research of HBT onsilicon material was carrying on. Beforemore than ten years ago, the first transistor with polysilicon emitter came out. Because the technical development of GaAs growth on silicon and SiGe alloy, HBT with the new structure appeared. Also HBT resolved the contradiction between emitted efficiency and base resistance resulted from base doping , and push bipolar device forwarded a big step. On the other hand, a long time ago someone found that HBT output characteristic of Ⅲ / Ⅴ family compound presented negative resistance phenomenon at the big current output with high power. This kind of phenomenon is promoted warmly by the high power and it is caused that the electric current gain and shoulder the coefficient of temperature.Resonant Tunneling Device is a kind of negative resistance device based on the quantum tunneling phenomena, which has the some characteristics such as quickly responding speed, highly working frequency, low power consumption and multi-functional etc, making people focus attention on it. Take RTD for example, the switch frequency between peak and valley can be up to 2.5THz in theory; the switch time has reached 1.6ps.To achieve XOR logic function, TTL circuit needs 33 device; CMOS needs 16,and that RTD only needs 4.Using these characteristics, RTD can be widely used to multi-state memory, A/D converter, multi-value logic, frequency divider, double frequency and so on. Because NDRHBT and RTD has rapidly development and excellent foreground of application, it became urgently to study on RTD or NDRHBT and theirs application . In this dissertation, RTD and NDRHBT design theory, material design and preparation, the structure and technology of device and circuit, RTD's and NDRHBT's measurement and analysis, establishment of circuit model, device simulation of RTD or NDRHBT and theirs relevant RTD's or
NDRHBT's circuits for application are studied intensively. Follows are the main products of this thesis:1. InGaAs/ GaAs negative differential resistance device is designed and fabricated with good excellent performance. At the same time, the NDRHBT design theory and experience is systemic summarized.2. Temperature effects on I-V characteristics of RTD have been measured and qualitatively analyzed owing to intrinsically effect.3. Test and analyze the I-V characteristics, bistable characteristic and circuit characteristic of RTD.The material, structure and process of the NDRHBT with gate (NDRHBT) and the neural transistor made by NDRHBT are designed and researched. The NDR HBT Device simulation is performed and studied.
共振隧穿器件(Resonant Tunneling Device)是基于量子隧穿现象的一种负阻器件,它具有响应速度快、工作频率高、低电压、低功耗和多功能等特性,令人瞩目。以两端负阻器件RTD为例,其峰谷间转换频率理论预计可达1.5～2.5THz,开关时间达1.7ps;完成一个异或(XOR)逻辑功能,TTL电路需33个器件,CMOS需16个器件,而RTD只需4个器件。利用这些特点,RTD可在多态存贮、A/D转换、多值逻辑、分频、倍频等方面得到广泛的应用。由于NDRHBT和RTD器件快速发展和良好的应用前景,对两、三端负阻器件及应用显得越来越迫切。本论文从NDRHBT和RTD的设计理论、材料设计和制备、器件结构和工艺的设计、NDR HBT和RTD测试和分析方法、以及相关器件的模拟、NDR HBT应用电路等方面,对两、三端负阻器件进行了深入研究。
主要成果如下:
1、设计、研制出具有一定水平的InGaAs/GaAs微分负阻异质结双极晶体管。并且,系统地总结出有关NDR HBT的设计理论和实践的经验。
2、对两端RTD的温度效应进行了测量和定性分析,认为其是一种本征效应。
3、对RTD直流、双稳特性和电路特性进行了测试和分析。对NDR HBT的应用电路—神经元和柔性电路的版图、工艺和材料结构进行了设计和研究。对NDR HBT器件模拟进行了研究。
Heterojunction Bipolar Transistor (HBT) is one of important heterojunction electronics devices. And NRD HBT is the three terminal negative differential resistance device and has such characteristics as the negative resistance, bi-stability and self latch and so on, so people give it many attentions. As early as the year of 1951, Xiao Kelai had brought up the conception of HBT. In 1957, Kroemer had systematically brought up the theories for HBT again, so aroused people' s biggest interests. In 1972, for the development of process of compound semiconductor, there were some reports about HBT begin-to appear, at the same time, the research of HBT onsilicon material was carrying on. Beforemore than ten years ago, the first transistor with polysilicon emitter came out. Because the technical development of GaAs growth on silicon and SiGe alloy, HBT with the new structure appeared. Also HBT resolved the contradiction between emitted efficiency and base resistance resulted from base doping , and push bipolar device forwarded a big step. On the other hand, a long time ago someone found that HBT output characteristic of Ⅲ / Ⅴ family compound presented negative resistance phenomenon at the big current output with high power. This kind of phenomenon is promoted warmly by the high power and it is caused that the electric current gain and shoulder the coefficient of temperature.Resonant Tunneling Device is a kind of negative resistance device based on the quantum tunneling phenomena, which has the some characteristics such as quickly responding speed, highly working frequency, low power consumption and multi-functional etc, making people focus attention on it. Take RTD for example, the switch frequency between peak and valley can be up to 2.5THz in theory; the switch time has reached 1.6ps.To achieve XOR logic function, TTL circuit needs 33 device; CMOS needs 16,and that RTD only needs 4.Using these characteristics, RTD can be widely used to multi-state memory, A/D converter, multi-value logic, frequency divider, double frequency and so on. Because NDRHBT and RTD has rapidly development and excellent foreground of application, it became urgently to study on RTD or NDRHBT and theirs application . In this dissertation, RTD and NDRHBT design theory, material design and preparation, the structure and technology of device and circuit, RTD's and NDRHBT's measurement and analysis, establishment of circuit model, device simulation of RTD or NDRHBT and theirs relevant RTD's or
NDRHBT's circuits for application are studied intensively. Follows are the main products of this thesis:1. InGaAs/ GaAs negative differential resistance device is designed and fabricated with good excellent performance. At the same time, the NDRHBT design theory and experience is systemic summarized.2. Temperature effects on I-V characteristics of RTD have been measured and qualitatively analyzed owing to intrinsically effect.3. Test and analyze the I-V characteristics, bistable characteristic and circuit characteristic of RTD.The material, structure and process of the NDRHBT with gate (NDRHBT) and the neural transistor made by NDRHBT are designed and researched. The NDR HBT Device simulation is performed and studied.
引文
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