激光（1.064μm）/红外（3～5μm）光学系统中滤光膜技术的研究
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摘要
由于蓝宝石在近红外波段以及中红外波段有较高的透过率,同时常温下蓝宝石光学、力学以及热冲击、抗雨蚀有很好的性能,因而是激光红外光学系统的首选材料。由于目前材料加工的工艺水平的不足,使得蓝宝石的透过率低于理论值,另外,蓝宝石较差的高温强度限制了蓝宝石其他性能的发挥。而在蓝宝石头罩/窗口沉积增透保护膜层是提高光学性能和改善高温强度的一种有效方法。
由于激光/红外光学系统对(1.064μm)和(3-5μm)波段的透过率要求较高,而常用的DLC、SiC、Si3N4保护膜虽然有很高的硬度且在3-5μm有较好的透明性,但在1.064μm波长处都有不同程度的吸收,所以无法作为激光红外系统的保护膜。考虑到激光/红外系统对透过率及膜层机械性能的特殊要求,选择在(1.064μm)和(3-5μm)都有较高透过率的非晶Al2O3作为保护膜。
本文将SiO2和TiO2作为增透膜系的高低折射率材料,Al2O3作为保护膜材料,利用等离子体化学气相沉积(PECVD)的方法在蓝宝石基底上沉积增透保护膜,对薄膜的制备工艺及其性能进行了系统的研究,具体内容如下：
根据激光(1.064μm)红外(3-5μm)光学系统的波段特点,采用等离子体化学气相沉积(PECVD)的方法,在蓝宝石衬底上设计并制备了SiO2、TiO2作为高、低折射率的增透膜以及非晶Al2O3的保护膜。可实现1.064μmm和3-5μm波段的增透和保护作用,满足激光红外光学系统的使用要求。
采用等离子体化学气相沉积(PECVD)的方法,在蓝宝石衬底上设计并制备了SiO2、TiO2薄膜。揭示了主要工艺参数对SiO2和TiO2薄膜的沉积速率、附着力、内应力和透过率的影响规律。利用Femm软件对真空室内的电场进行模拟,同时借助田口试验方法指导实验,解决了由于头罩形状的特殊性给增透膜和保护膜带来的厚度均匀性差的问题。本实验中膜层厚度的非均匀度小于8%,满足激光红外光学系统对膜层厚度均匀性的要求。
利用等离子体化学气相沉积(PECVD)的方法,采用ATSB作为反应前驱物、Ar为运载气体来制备Al2O3保护膜,揭示了主要工艺参数对Al2O3薄膜硬度沉积速率、附着力、内应力和透过率的影响规律。
根据最终确定的SiO2、TiO2、Al2O3的光学色散数据进行膜系设计,并对增透保护膜进行制备,镀膜后头罩总的透过率增加了约8%,满足了使用要求。
对保护膜进行了硬度测试,对不同温度下镀膜和没有镀膜的蓝宝石衬底进行弯曲强度试验。试验发现,在同等条件下镀膜后蓝宝石的平均抗弯强度高于未镀膜蓝宝石的抗弯强度。在600℃时,镀增透保护膜的蓝宝石样品的平均抗弯强度是未镀膜蓝宝石的1.27倍,说明镀膜可以改善蓝宝石的表面质量,进而改善蓝宝石的高温强度。
Because of good performance in near middle infrared waveband with high transmittance, as well as optical, mechanical, thermal and shock resistance property in normal temperature, sapphire is the preferred selection of material for laser infrared optical system. The lack of material processing technology makes transmittance of sapphire less than its theoretical value. Moreover, the poor strength at high temperature limits other performance of the sapphire. Depositing AR coating and protecting coating on the sapphire dome or window is an effective way to improve both optical properties and strength at a high temperature.
The laser infrared optical system always requires a high transmittance at1.064μm and3-5μn band. Although DLC, SiC, and Si3N4possess high hardness and good transparency at3-5μm waveband, the absorption there at1.064μm stays in an unacceptable level, so they cannot be the protecting film of the laser infrared system. Amorphous Al2O3have been chosen as the protecting film considering the good mechanical properties and high transmittance at1.064μm and3-5μm waveband.
Plasma enhanced chemical vapor deposition (PECVD) method, which has been used for deposition of AR and protecting film, choosing SiO2and TiO2as the low and high refractive index material respectively, and Al2O3as the external protection material, the preparation processing and performance of the film has been studied. The specific contents are as follows:According to the characteristics of the laser infrared optical system,AR and protecting film have been deposited with assistance of plasma enhanced chemical vapor deposition (PECVD) technology on the sapphire substrate, the requirements of the laser infrared optical system has been met.
The SiO2and TiO2thin films has been fabricated on the substrate of sapphire using PECVD method. The effection of dominating processing on deposition rate, adhesion, and residual stress has been revealed. With simulation of the electrical field by Femm software, and the aid of taguchi method, the uniformity of the film thickness on Dome has been greatly improved. The uniformity of film thickness is less than8%, the requirements of film uniformity on laser infrared optical system has been achieved.
The Al2O3protective film have been prepared using PECVD method, and choosing ATSB as the precursor and Ar as the carrier gas,revealing the effect of the main processing parameters on deposition rate, hardness, adhesion, residual and stress.
According to the optical dispersion data of SiO2, TiO2, and Al2O3, the AR protection film system have been designed to increase the transmittance of the whole dome by8%, which made it meet the using requirements successfully.
The hardness test and the bending strength test on coated and uncoated substrate have all been made to show that the average flexural strength of coated substrate, which is better than the uncoated sample. The average flexural strength of coated substrate turns out to be1.27times stronger than the uncoated sapphire at600℃. It has been proved that, Coating can improve the surface quality of sapphire,and then enhanced the strength at high temperature.
由于激光/红外光学系统对(1.064μm)和(3-5μm)波段的透过率要求较高,而常用的DLC、SiC、Si3N4保护膜虽然有很高的硬度且在3-5μm有较好的透明性,但在1.064μm波长处都有不同程度的吸收,所以无法作为激光红外系统的保护膜。考虑到激光/红外系统对透过率及膜层机械性能的特殊要求,选择在(1.064μm)和(3-5μm)都有较高透过率的非晶Al2O3作为保护膜。
本文将SiO2和TiO2作为增透膜系的高低折射率材料,Al2O3作为保护膜材料,利用等离子体化学气相沉积(PECVD)的方法在蓝宝石基底上沉积增透保护膜,对薄膜的制备工艺及其性能进行了系统的研究,具体内容如下：
根据激光(1.064μm)红外(3-5μm)光学系统的波段特点,采用等离子体化学气相沉积(PECVD)的方法,在蓝宝石衬底上设计并制备了SiO2、TiO2作为高、低折射率的增透膜以及非晶Al2O3的保护膜。可实现1.064μmm和3-5μm波段的增透和保护作用,满足激光红外光学系统的使用要求。
采用等离子体化学气相沉积(PECVD)的方法,在蓝宝石衬底上设计并制备了SiO2、TiO2薄膜。揭示了主要工艺参数对SiO2和TiO2薄膜的沉积速率、附着力、内应力和透过率的影响规律。利用Femm软件对真空室内的电场进行模拟,同时借助田口试验方法指导实验,解决了由于头罩形状的特殊性给增透膜和保护膜带来的厚度均匀性差的问题。本实验中膜层厚度的非均匀度小于8%,满足激光红外光学系统对膜层厚度均匀性的要求。
利用等离子体化学气相沉积(PECVD)的方法,采用ATSB作为反应前驱物、Ar为运载气体来制备Al2O3保护膜,揭示了主要工艺参数对Al2O3薄膜硬度沉积速率、附着力、内应力和透过率的影响规律。
根据最终确定的SiO2、TiO2、Al2O3的光学色散数据进行膜系设计,并对增透保护膜进行制备,镀膜后头罩总的透过率增加了约8%,满足了使用要求。
对保护膜进行了硬度测试,对不同温度下镀膜和没有镀膜的蓝宝石衬底进行弯曲强度试验。试验发现,在同等条件下镀膜后蓝宝石的平均抗弯强度高于未镀膜蓝宝石的抗弯强度。在600℃时,镀增透保护膜的蓝宝石样品的平均抗弯强度是未镀膜蓝宝石的1.27倍,说明镀膜可以改善蓝宝石的表面质量,进而改善蓝宝石的高温强度。
Because of good performance in near middle infrared waveband with high transmittance, as well as optical, mechanical, thermal and shock resistance property in normal temperature, sapphire is the preferred selection of material for laser infrared optical system. The lack of material processing technology makes transmittance of sapphire less than its theoretical value. Moreover, the poor strength at high temperature limits other performance of the sapphire. Depositing AR coating and protecting coating on the sapphire dome or window is an effective way to improve both optical properties and strength at a high temperature.
The laser infrared optical system always requires a high transmittance at1.064μm and3-5μn band. Although DLC, SiC, and Si3N4possess high hardness and good transparency at3-5μm waveband, the absorption there at1.064μm stays in an unacceptable level, so they cannot be the protecting film of the laser infrared system. Amorphous Al2O3have been chosen as the protecting film considering the good mechanical properties and high transmittance at1.064μm and3-5μm waveband.
Plasma enhanced chemical vapor deposition (PECVD) method, which has been used for deposition of AR and protecting film, choosing SiO2and TiO2as the low and high refractive index material respectively, and Al2O3as the external protection material, the preparation processing and performance of the film has been studied. The specific contents are as follows:According to the characteristics of the laser infrared optical system,AR and protecting film have been deposited with assistance of plasma enhanced chemical vapor deposition (PECVD) technology on the sapphire substrate, the requirements of the laser infrared optical system has been met.
The SiO2and TiO2thin films has been fabricated on the substrate of sapphire using PECVD method. The effection of dominating processing on deposition rate, adhesion, and residual stress has been revealed. With simulation of the electrical field by Femm software, and the aid of taguchi method, the uniformity of the film thickness on Dome has been greatly improved. The uniformity of film thickness is less than8%, the requirements of film uniformity on laser infrared optical system has been achieved.
The Al2O3protective film have been prepared using PECVD method, and choosing ATSB as the precursor and Ar as the carrier gas,revealing the effect of the main processing parameters on deposition rate, hardness, adhesion, residual and stress.
According to the optical dispersion data of SiO2, TiO2, and Al2O3, the AR protection film system have been designed to increase the transmittance of the whole dome by8%, which made it meet the using requirements successfully.
The hardness test and the bending strength test on coated and uncoated substrate have all been made to show that the average flexural strength of coated substrate, which is better than the uncoated sample. The average flexural strength of coated substrate turns out to be1.27times stronger than the uncoated sapphire at600℃. It has been proved that, Coating can improve the surface quality of sapphire,and then enhanced the strength at high temperature.
引文
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