超宽带系统中CMOS直接下变频混频器的设计和研究
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摘要
近年来,无线通信迅速发展,作为其关键模块,射频集成电路成为当前的研究热点。随着CMOS工艺的发展,器件性能有很大提高,在射频集成电路中用CMOS工艺代替传统的GaAs、BiCMOS等工艺成为可能。但一些二级效应以及衬底串扰等也会变得更加显著,给电路的设计带来了许多困难,特别是电源电压的降低使得传统的电路拓扑结构不能满足设计的要求。
混频器是射频集成电路的核心模块,每个无线通信系统中至少要用到一个以上的混频器,其性能直接影响整个系统的性能以及系统对其它功能模块的要求。
基于这种背景,本文提出了一种应用于超宽带系统的高性能(低压、高线性度、高变频增益)直接下变频混频器,采用标准的CMOS工艺设计和实现。该混频器基于传统的吉尔伯特混频器,但又对它进行了多方面的优化,包括采用折叠式结构、反相器、自偏置和恒定跨导偏置电路等。同时,利用LC谐振网络中的电感来消除寄生电容的影响,有效地提高了混频器的各项性能。本文对该混频器进行了详细的分析,最后给出了需要进一步改进的地方。
设计采用中芯国际0.18μm CMOS RF工艺库,使用Spectre RF工具进行仿真、Virtuoso Layout Editor工具完成版图设计,并在中芯国际(上海)流片。仿真结果显示电压变频增益为10dB,1dB压缩点为9.5dBm,输入三阶互调截点IIP3为15.1dBm,在拐点处的双边带噪声系数为11dB,在100MHz处为9dB。该电路工作在电源电压1.8V下,功耗为11mW。
With the rapid development of wireless communication in recent years, Radio Frequency Integrated Circuit (RFIC), which is a crucial block of it, has become a focus of present study. The development of CMOS technology greatly improves the performance of the devices and makes it possible to substitute CMOS technology for the traditional GaAs and BiCMOS technology in RFICs. However, some second-order effects and substrate crosstalk etc. will also become more obvious, which brings much difficulty to the circuit design, and the most severe consequence is a reduction of the voltage supply, which causes that not all circuit topologies can satisfy the required specifications.
The mixer is an important block in RFICs, as every wireless communication system needs at least one mixer, and its performance has a direct influence upon that of the whole system and upon the demands of the system for other blocks.
To solve these problems, this paper presents a high performance, namely low voltage, high linearity and high conversion gain, CMOS direct down conversion mixer for UWB (Ultra Wide Band) system. Based on the traditional Gilbert mixer, the proposed mixer makes many improvements upon it, including the uses of folded topology, inverter, self-biasing, constant Gm biasing circuit and so on. Also, inductor in LC resonating network is used to get rid of the negative effect of parasitic capacitor. Consequently, all performances of the mixer are effectively enhanced. This paper gives a detailed analysis of the proposed mixer, and at last, this paper gives some suggestions on how to improve the performance of the mixer.
This design is based on 0.18μm CMOS RF technology of SMIC, employing Spectre RF to accomplish the simulation and using Virtuoso Layout Editor to finish the layout design, and finally, the layout taped out in SMIC (Shanghai). the simulation results show that the conversion gain of 10dB, the P1dB of 9.5dBm, the IIP3 of 15.1dBm, the DSB(double side-band) Noise Figure at turning point of 11dB and at 100MHz of 9dB. The circuit operates at the voltage supply of 1.8V and dissipates 11mW.
混频器是射频集成电路的核心模块,每个无线通信系统中至少要用到一个以上的混频器,其性能直接影响整个系统的性能以及系统对其它功能模块的要求。
基于这种背景,本文提出了一种应用于超宽带系统的高性能(低压、高线性度、高变频增益)直接下变频混频器,采用标准的CMOS工艺设计和实现。该混频器基于传统的吉尔伯特混频器,但又对它进行了多方面的优化,包括采用折叠式结构、反相器、自偏置和恒定跨导偏置电路等。同时,利用LC谐振网络中的电感来消除寄生电容的影响,有效地提高了混频器的各项性能。本文对该混频器进行了详细的分析,最后给出了需要进一步改进的地方。
设计采用中芯国际0.18μm CMOS RF工艺库,使用Spectre RF工具进行仿真、Virtuoso Layout Editor工具完成版图设计,并在中芯国际(上海)流片。仿真结果显示电压变频增益为10dB,1dB压缩点为9.5dBm,输入三阶互调截点IIP3为15.1dBm,在拐点处的双边带噪声系数为11dB,在100MHz处为9dB。该电路工作在电源电压1.8V下,功耗为11mW。
With the rapid development of wireless communication in recent years, Radio Frequency Integrated Circuit (RFIC), which is a crucial block of it, has become a focus of present study. The development of CMOS technology greatly improves the performance of the devices and makes it possible to substitute CMOS technology for the traditional GaAs and BiCMOS technology in RFICs. However, some second-order effects and substrate crosstalk etc. will also become more obvious, which brings much difficulty to the circuit design, and the most severe consequence is a reduction of the voltage supply, which causes that not all circuit topologies can satisfy the required specifications.
The mixer is an important block in RFICs, as every wireless communication system needs at least one mixer, and its performance has a direct influence upon that of the whole system and upon the demands of the system for other blocks.
To solve these problems, this paper presents a high performance, namely low voltage, high linearity and high conversion gain, CMOS direct down conversion mixer for UWB (Ultra Wide Band) system. Based on the traditional Gilbert mixer, the proposed mixer makes many improvements upon it, including the uses of folded topology, inverter, self-biasing, constant Gm biasing circuit and so on. Also, inductor in LC resonating network is used to get rid of the negative effect of parasitic capacitor. Consequently, all performances of the mixer are effectively enhanced. This paper gives a detailed analysis of the proposed mixer, and at last, this paper gives some suggestions on how to improve the performance of the mixer.
This design is based on 0.18μm CMOS RF technology of SMIC, employing Spectre RF to accomplish the simulation and using Virtuoso Layout Editor to finish the layout design, and finally, the layout taped out in SMIC (Shanghai). the simulation results show that the conversion gain of 10dB, the P1dB of 9.5dBm, the IIP3 of 15.1dBm, the DSB(double side-band) Noise Figure at turning point of 11dB and at 100MHz of 9dB. The circuit operates at the voltage supply of 1.8V and dissipates 11mW.
引文
[1] Bin Zhao, Herbert S. Bennett, Julio E. Cottrell, et al. Future perspective of RF and analog/mixed-signal integrated circuit technology for mobile communications. ICSICT. 2006. 1518-1521.
[2] Mau-Chung Frank Chang. Impact of CMOS scaling on RF/mixed signal circuit designs. ICSICT. 2006. 1514-1517.
[3] Q Huang, F Piazza, P Orsatti, et al. The impact of scaling down to deep submicron on CMOS RF circuits. IEEE Journal Solid-State Circuits. July 1998, 33(7). 1023-1036
[4] Dawn Wang, Jack Ou, Xudong Wang. RF design challenges at 90nm RFCMOS technology under low voltage applications. ICSICT. 2006, 1522-1525.
[5] Herbert S.Bennett, Ralf Brederlow, Julio C.Costa, et al. Device and technology evolution for Si-based RF integrated circuits. IEEE TRANSACTION ON ELECTRON DEVICES. 2005, July, VOL.52, NO.7. 1235-1257
[6] 张国艳,黄如,张兴等. CMOS射频集成电路的研究进展. 微电子学. 2004, 8, 34卷第4期. 377-383转389.
[7] 唐守龙,吴建辉. CMOS混频器设计现状与进展. 微电子学. 2005, 12, 35卷第6期. 605-611.
[8] Lawrence E. Larson. Integrated circuit technology options of RFICs—present status and future directions. IEEE Journal Solid-State Circuits. 1998, 33(3). 387-399.
[9] Asad A. Abidi. RF CMOS comes of age. IEEE microwave magazine. 2003, 12. 47-60
[10] Behzad Razavi. CMOS technology characterization for Analog and RF design. IEEE Journal Solid-State Circuits. March 1999, VOL. 34, NO. 3. 268-276.
[11] Behzad Razavi. RF Microelectronics. 第1版. 影印版, 北京:清华大学出版社. 2003年12月. 122-146.
[12] 陈邦媛. 射频通信电路. 第一版. 北京:科学出版社. 2002年8月. 136-147.
[13] Eyad Abou-Allam, John J. Nisbet, Michael C. Maliepaard. Low-voltage 1.9-GHz front-end receiver in 0.5-μm CMOS technology. IEEE Journal of Solid-State Circuits. 2001, 36(10). 1434-1443.
[14] Tadjpour S, Cijvot E, Hegazi E. A 900MHz dual conversion low-IF GSM receiver in 0.35μm CMOS. IEEE Journal of Solid-State Circuits. 2001, 36(12). 1992-202.
[15] Xu J., Chen J. Design of weaver topology. Electronic Letters.2001, 37(18).1133-1135.
[16] Behzad Razavi. Design considerations for direct-conversion receivers. IEEE Transactions on Circuits and System-- II: Analog and Digital Processing. June 1997, 44(6). 428-435.
[17] Roghoyeh Sakmeh, Brent J. Maundy, Ronald H. Johnston. Design issues of direct conversion radio frequency receivers in SiGe technology. IEEE CCECE. 2004. 0061-0064.
[18] Won Namgoong, Teresa H. Meng. Direct-conversion RF receiver design. IEEE Transactions on communications. March 2001,49(3).518-529.
[19] Tuan-Anh PHAN, Chang-Wan KIM, Yun-A SHIM, et al. A high performance CMOS direct down conversion mixer for UWB system. IEEE Trans. Electron.December 2005, E88-C(12). 2316-2321.
[20] 陈邦媛. 射频通信电路. 第一版. 北京:科学出版社. 2002年8月. 197-230.
[21] 李恩玲,褚蒙,周如培. 射频CMOS混频器的设计. 微电子学. 2005, 4, 35(4). 189-191.
[22] Zhaofeng Zhang, Louis Tsui, Zhiheng Chen, et al. A CMOS Self-Mixing-Free Front-End for Direct Conversion Applications. IEEE. 2001. 386-389.
[23] Jinsung Park, Chang-Ho Lee, Byung-Sung Kim, et al. Design and analysis of low fiicker-noise CMOS mixers for direct-conversion receivers. IEEE Transactions on Microwave Theory and Techniques. December 2006, 54(12). 4372-4380.
[24] Moon-Su Yang, Hye-Ryoung Kim, Sang-Gue Lee. A 900MHz low voltage low power highly linear mixer for direct-conversion receivers. IEEE ICECS. 2003. 974-977.
[25] Giuseppe Cusmai, Massimo Brandolini, Paolo Rossi, et al. A 0.18μm CMOS selective receiver front-end for UWB applications. IEEE Journal of Solid-State Circuits. August 2006, 41(8). 1764-1771.
[26] Behzad Razavi, Turgut Aytur, Christopher Lam, et al. A UWB CMOS transceiver. IEEE Journal of Solid-State Circuits. December 2005,40(12). 2555-2562.
[27] JP Silver. Gilbert cell mixer design tutorial. www.rfic.co.uk: RF, RFIC&Microwave, Theory, Design. 1-20.
[28] S.-G. Lee, J.-K. Choi. Current-reuse bleeding mixer. Electronics Letters. April 2000, 36(8). 696-697.
[29] Cheng-Chih chang, Ro-Min Weng, J. C, Huang, et al. A 1.5V high gain CMOS mixer for 2.4-GHz applications. IEEE. 2001. 782-785.
[30] Hung-Che Wei, Ro-Min Weng, Kun-Yi Lin. A 1.5V high-linearity CMOS mixer for 2.4GHz applications. IEEE ISCAS. 2004. 561-564.
[31] Q. Li, J. S. Yuan. Linearity analysis and design optimization for 0.18μm CMOS RF mixer. IEEE Proc. –Circuits Devices Syst. April 2002, 149(2). 112-118.
[32] 李鸣,唐守龙,罗岚等. 高线性度上变频混频器设计. 电子器件. 2004年12月, 27(4). 603-606.
[33] Hooman Darabi, Janice Chiu. A noise cancellation technique in active RF-CMOS mixers. IEEE Journal of Solid-State Circuits. December 2005, 40(12). 2628-2632.
[34] Lu Liu, Zhihua Wang. Analysis and design of a low-voltage RF CMOS mixer. IEEE Transactions on Circuits and System-- II: Express Briefs. March 2006, 53(3). 212-216.
[35] P. J. Sullivan, B. A. Xavier, W. H. Ku. Low voltage performance of a microwave CMOS Gilbert cell mixer. IEEE Journal of Solid-State Circuits. July 1997, 32(7). 1151-1155.
[36] Tajinder Manku, Galen Beck, Etty J. Shin. A low-voltage design technique for RF integrated circuits. IEEE Transactions on Circuits and Systems--II: Analog and Digital Signal Processing. October 1998, 45(10). 1408—1413.
[37] Vojkan Vidojkovic, Johan van der Tang, Arjan Leeuwenburgh et al. A low-voltage folded-switching mixer in 0.18-μm CMOS. IEEE Journal of Solid-State Circuits. June 2005, 40(6). 1259—1264.
[38] 毕查德.拉扎维著. 陈贵灿等译. 模拟CMOS集成电路设计. 第一版. 西安:西安交通大学出版社. 2002年12月. 320-321.
[39] Manolis T. Terrovitis, Robert G. Meyer. Noise in current commutating CMOS mixers. IEEE Journal of Solid-State Circuits. June 1999, 34(6). 772-783.
[40] Hooman Darabi, Asad A.Abidi. Noise in RF-CMOS mixers: A simple physicalmodel. IEEE Journal of Solid-State Circuits. January 2000, 35(1).15-25.
[41] 李俊宏. CMOS集成混频器噪声模型的计算机仿真与分析. 微电子学. 2004年10月, 34(5). 514-518.
[42] Cadence Corporation. Virtuoso SpectreRF Simulation Option User Guide. Product Version 5.1.41. July 2005.
[43] Mini-Circuits Engineering. Figure of merit of mixer intermod performance. MPDigest, http://www.mpdigest.com/Articles/July2001/mini/Default.htm, July 2001.
[44] Alan Hastings. The Art of Analog Layout. 第一版. 北京:清华大学出版社. 2004年4月.
[45] 萧旭峰. RF Measurement. 国家晶片系统设计中心. hfs@cic.org.tw
[2] Mau-Chung Frank Chang. Impact of CMOS scaling on RF/mixed signal circuit designs. ICSICT. 2006. 1514-1517.
[3] Q Huang, F Piazza, P Orsatti, et al. The impact of scaling down to deep submicron on CMOS RF circuits. IEEE Journal Solid-State Circuits. July 1998, 33(7). 1023-1036
[4] Dawn Wang, Jack Ou, Xudong Wang. RF design challenges at 90nm RFCMOS technology under low voltage applications. ICSICT. 2006, 1522-1525.
[5] Herbert S.Bennett, Ralf Brederlow, Julio C.Costa, et al. Device and technology evolution for Si-based RF integrated circuits. IEEE TRANSACTION ON ELECTRON DEVICES. 2005, July, VOL.52, NO.7. 1235-1257
[6] 张国艳,黄如,张兴等. CMOS射频集成电路的研究进展. 微电子学. 2004, 8, 34卷第4期. 377-383转389.
[7] 唐守龙,吴建辉. CMOS混频器设计现状与进展. 微电子学. 2005, 12, 35卷第6期. 605-611.
[8] Lawrence E. Larson. Integrated circuit technology options of RFICs—present status and future directions. IEEE Journal Solid-State Circuits. 1998, 33(3). 387-399.
[9] Asad A. Abidi. RF CMOS comes of age. IEEE microwave magazine. 2003, 12. 47-60
[10] Behzad Razavi. CMOS technology characterization for Analog and RF design. IEEE Journal Solid-State Circuits. March 1999, VOL. 34, NO. 3. 268-276.
[11] Behzad Razavi. RF Microelectronics. 第1版. 影印版, 北京:清华大学出版社. 2003年12月. 122-146.
[12] 陈邦媛. 射频通信电路. 第一版. 北京:科学出版社. 2002年8月. 136-147.
[13] Eyad Abou-Allam, John J. Nisbet, Michael C. Maliepaard. Low-voltage 1.9-GHz front-end receiver in 0.5-μm CMOS technology. IEEE Journal of Solid-State Circuits. 2001, 36(10). 1434-1443.
[14] Tadjpour S, Cijvot E, Hegazi E. A 900MHz dual conversion low-IF GSM receiver in 0.35μm CMOS. IEEE Journal of Solid-State Circuits. 2001, 36(12). 1992-202.
[15] Xu J., Chen J. Design of weaver topology. Electronic Letters.2001, 37(18).1133-1135.
[16] Behzad Razavi. Design considerations for direct-conversion receivers. IEEE Transactions on Circuits and System-- II: Analog and Digital Processing. June 1997, 44(6). 428-435.
[17] Roghoyeh Sakmeh, Brent J. Maundy, Ronald H. Johnston. Design issues of direct conversion radio frequency receivers in SiGe technology. IEEE CCECE. 2004. 0061-0064.
[18] Won Namgoong, Teresa H. Meng. Direct-conversion RF receiver design. IEEE Transactions on communications. March 2001,49(3).518-529.
[19] Tuan-Anh PHAN, Chang-Wan KIM, Yun-A SHIM, et al. A high performance CMOS direct down conversion mixer for UWB system. IEEE Trans. Electron.December 2005, E88-C(12). 2316-2321.
[20] 陈邦媛. 射频通信电路. 第一版. 北京:科学出版社. 2002年8月. 197-230.
[21] 李恩玲,褚蒙,周如培. 射频CMOS混频器的设计. 微电子学. 2005, 4, 35(4). 189-191.
[22] Zhaofeng Zhang, Louis Tsui, Zhiheng Chen, et al. A CMOS Self-Mixing-Free Front-End for Direct Conversion Applications. IEEE. 2001. 386-389.
[23] Jinsung Park, Chang-Ho Lee, Byung-Sung Kim, et al. Design and analysis of low fiicker-noise CMOS mixers for direct-conversion receivers. IEEE Transactions on Microwave Theory and Techniques. December 2006, 54(12). 4372-4380.
[24] Moon-Su Yang, Hye-Ryoung Kim, Sang-Gue Lee. A 900MHz low voltage low power highly linear mixer for direct-conversion receivers. IEEE ICECS. 2003. 974-977.
[25] Giuseppe Cusmai, Massimo Brandolini, Paolo Rossi, et al. A 0.18μm CMOS selective receiver front-end for UWB applications. IEEE Journal of Solid-State Circuits. August 2006, 41(8). 1764-1771.
[26] Behzad Razavi, Turgut Aytur, Christopher Lam, et al. A UWB CMOS transceiver. IEEE Journal of Solid-State Circuits. December 2005,40(12). 2555-2562.
[27] JP Silver. Gilbert cell mixer design tutorial. www.rfic.co.uk: RF, RFIC&Microwave, Theory, Design. 1-20.
[28] S.-G. Lee, J.-K. Choi. Current-reuse bleeding mixer. Electronics Letters. April 2000, 36(8). 696-697.
[29] Cheng-Chih chang, Ro-Min Weng, J. C, Huang, et al. A 1.5V high gain CMOS mixer for 2.4-GHz applications. IEEE. 2001. 782-785.
[30] Hung-Che Wei, Ro-Min Weng, Kun-Yi Lin. A 1.5V high-linearity CMOS mixer for 2.4GHz applications. IEEE ISCAS. 2004. 561-564.
[31] Q. Li, J. S. Yuan. Linearity analysis and design optimization for 0.18μm CMOS RF mixer. IEEE Proc. –Circuits Devices Syst. April 2002, 149(2). 112-118.
[32] 李鸣,唐守龙,罗岚等. 高线性度上变频混频器设计. 电子器件. 2004年12月, 27(4). 603-606.
[33] Hooman Darabi, Janice Chiu. A noise cancellation technique in active RF-CMOS mixers. IEEE Journal of Solid-State Circuits. December 2005, 40(12). 2628-2632.
[34] Lu Liu, Zhihua Wang. Analysis and design of a low-voltage RF CMOS mixer. IEEE Transactions on Circuits and System-- II: Express Briefs. March 2006, 53(3). 212-216.
[35] P. J. Sullivan, B. A. Xavier, W. H. Ku. Low voltage performance of a microwave CMOS Gilbert cell mixer. IEEE Journal of Solid-State Circuits. July 1997, 32(7). 1151-1155.
[36] Tajinder Manku, Galen Beck, Etty J. Shin. A low-voltage design technique for RF integrated circuits. IEEE Transactions on Circuits and Systems--II: Analog and Digital Signal Processing. October 1998, 45(10). 1408—1413.
[37] Vojkan Vidojkovic, Johan van der Tang, Arjan Leeuwenburgh et al. A low-voltage folded-switching mixer in 0.18-μm CMOS. IEEE Journal of Solid-State Circuits. June 2005, 40(6). 1259—1264.
[38] 毕查德.拉扎维著. 陈贵灿等译. 模拟CMOS集成电路设计. 第一版. 西安:西安交通大学出版社. 2002年12月. 320-321.
[39] Manolis T. Terrovitis, Robert G. Meyer. Noise in current commutating CMOS mixers. IEEE Journal of Solid-State Circuits. June 1999, 34(6). 772-783.
[40] Hooman Darabi, Asad A.Abidi. Noise in RF-CMOS mixers: A simple physicalmodel. IEEE Journal of Solid-State Circuits. January 2000, 35(1).15-25.
[41] 李俊宏. CMOS集成混频器噪声模型的计算机仿真与分析. 微电子学. 2004年10月, 34(5). 514-518.
[42] Cadence Corporation. Virtuoso SpectreRF Simulation Option User Guide. Product Version 5.1.41. July 2005.
[43] Mini-Circuits Engineering. Figure of merit of mixer intermod performance. MPDigest, http://www.mpdigest.com/Articles/July2001/mini/Default.htm, July 2001.
[44] Alan Hastings. The Art of Analog Layout. 第一版. 北京:清华大学出版社. 2004年4月.
[45] 萧旭峰. RF Measurement. 国家晶片系统设计中心. hfs@cic.org.tw