UWB射频接收系统相关模块的研究
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摘要
近几年来,无线通信技术迅猛发展。作为无线通信发展的一个方向,超宽带(UWB)无线通信技术也得到快速发展。
论文针对UWB接收系统的设计要求,结合CMOS射频集成电路的优势,设计了用于UWB接收系统的重要模块,即低噪声放大器和下变频混频器。
首先,论文对UWB发展现状以及CMOS射频集成电路的特点进行论述,说明了设计用于UWB接收系统的低噪声放大器、下变频混频器的重要性。
其次,对CMOS射频集成电路中的重要元素—MOSFET的物理特性、噪声特性进行分析;同时对射频集成电路的设计基础-Smith圆图、S参数进行论述。
然后,根据UWB接收系统的设计要求,运用中芯国际CMOS RF工艺,进行了低噪声放大器的设计。在进行UWB低噪声放大器的设计时,针对UWB接收机下频带的要求,采用反馈阻抗实现宽带输入阻抗匹配。对低噪声放大器设计时,主要围绕正向功率增益、噪声系数、线性度、功耗等主要性能指标进行设计。
接着进行UWB下变频混频的设计。采用双平衡混频结构进行设计,在射频端口实现宽带阻抗匹配,在本振端口选取合适的开关信号。在进行混频器的设计时,主要围绕变频增益、噪声系数、线性度、功耗、口间隔离等主要性能指标进行。
采用Star-Hspice仿真器,对电路进行设计、仿真;并进一步对仿真结果进行分析。研究表明,设计的用于UWB接收系统的低噪声放大器、下变频混频器的性能指标满足设计要求,验证了设计的正确性。
In recent years, Wireless communication technology has been developed rapidly. As an aspect of wireless communication’s development, UWB wireless communication technology has been developed quickly.
This paper aims at the design demand of UWB receiving system and combines with the advantage of CMOS RFIC。We have designed the important blocks of UWB receiving system, that is Low noise amplifier (LNA) and down-conversion Mixer.
Firstly, this paper discussed something about UWB development actuality and characteristic of CMOS RFIC, which explained the importance of designing LNA and Mixer.
Secondly, we analyzed the physical characteristic and noise characteristic of MOSFET, which is an important element of CMOS RFIC. At the same time, we discussed smith chart and S-parameter, which are the design foundation of RFIC.
Afterwards, according to the design demand of UWB receiving system, LNA is implemented in CMOS RF technology . In the course of designing UWB LNA, we adopted feedback resistor to realize wideband impedance match according to the down-band demand of UWB receiving system. We designed the LNA according to the performance index of its forward power gain, noise figure, linearity, power consumption and so on.
We designed UWB down-conversion Mixer in succession. With the use of double balance mixer structure, we achieved wideband impedance match at RF port and selected appropriate switch signal at LO port. During the designing of UWB Mixer, we designed it according to its performance index of frequency conversion gain, noise figure, linearity, power consumption, port isolation and so on.
We designed and simulated the circuit by the Star-Hspice software. Furthermore, we analyzed the simulation results. The research results show: the performance indexes of LNA and Mixer can satisfy design demand, which validates design correctness.
论文针对UWB接收系统的设计要求,结合CMOS射频集成电路的优势,设计了用于UWB接收系统的重要模块,即低噪声放大器和下变频混频器。
首先,论文对UWB发展现状以及CMOS射频集成电路的特点进行论述,说明了设计用于UWB接收系统的低噪声放大器、下变频混频器的重要性。
其次,对CMOS射频集成电路中的重要元素—MOSFET的物理特性、噪声特性进行分析;同时对射频集成电路的设计基础-Smith圆图、S参数进行论述。
然后,根据UWB接收系统的设计要求,运用中芯国际CMOS RF工艺,进行了低噪声放大器的设计。在进行UWB低噪声放大器的设计时,针对UWB接收机下频带的要求,采用反馈阻抗实现宽带输入阻抗匹配。对低噪声放大器设计时,主要围绕正向功率增益、噪声系数、线性度、功耗等主要性能指标进行设计。
接着进行UWB下变频混频的设计。采用双平衡混频结构进行设计,在射频端口实现宽带阻抗匹配,在本振端口选取合适的开关信号。在进行混频器的设计时,主要围绕变频增益、噪声系数、线性度、功耗、口间隔离等主要性能指标进行。
采用Star-Hspice仿真器,对电路进行设计、仿真;并进一步对仿真结果进行分析。研究表明,设计的用于UWB接收系统的低噪声放大器、下变频混频器的性能指标满足设计要求,验证了设计的正确性。
In recent years, Wireless communication technology has been developed rapidly. As an aspect of wireless communication’s development, UWB wireless communication technology has been developed quickly.
This paper aims at the design demand of UWB receiving system and combines with the advantage of CMOS RFIC。We have designed the important blocks of UWB receiving system, that is Low noise amplifier (LNA) and down-conversion Mixer.
Firstly, this paper discussed something about UWB development actuality and characteristic of CMOS RFIC, which explained the importance of designing LNA and Mixer.
Secondly, we analyzed the physical characteristic and noise characteristic of MOSFET, which is an important element of CMOS RFIC. At the same time, we discussed smith chart and S-parameter, which are the design foundation of RFIC.
Afterwards, according to the design demand of UWB receiving system, LNA is implemented in CMOS RF technology . In the course of designing UWB LNA, we adopted feedback resistor to realize wideband impedance match according to the down-band demand of UWB receiving system. We designed the LNA according to the performance index of its forward power gain, noise figure, linearity, power consumption and so on.
We designed UWB down-conversion Mixer in succession. With the use of double balance mixer structure, we achieved wideband impedance match at RF port and selected appropriate switch signal at LO port. During the designing of UWB Mixer, we designed it according to its performance index of frequency conversion gain, noise figure, linearity, power consumption, port isolation and so on.
We designed and simulated the circuit by the Star-Hspice software. Furthermore, we analyzed the simulation results. The research results show: the performance indexes of LNA and Mixer can satisfy design demand, which validates design correctness.
引文
【1】 Rick Roberts.IEEE P802.15-03/154r3 2003 IEEE P802.15 Working Group for Wireless Personal Area Networks[S] .USA.Xtremespectrum,2003
【2】 G.RobertoAiello.Invited-Challenges for Ultra-wideband(UWB) CMOS Integration [C].2003 IEEE MIT-S Digest,USA:2003.361～364
【3】 刘畅.硅集成电感及 CMOS 射频集成电路研究:[博士学位论文] [D]. 上海:中国科学院上海微系统与信息技术研究所,2002
【4】 郭为.无线通信中低噪声低功耗 CMOS 射频接收芯片设计:[硕士学位论文] [D]. 浙江:浙江大学,2003
【5】 Behzad Razavi. Design of Analog CMOS Integrated Circuits[M].第 1 版.陈贵灿 程军 张瑞智等译.西安:西安交通大学出版社,2003.473～477
【6】 Thomas H.Lee. The Design of CMOS Radio-Frequency Integrated Circuits[M].第 1 版.余志平 周润德 等译. 北京:电子工业出版社,2004. 197～201
【7】 Reinhold Ludwig,Pavel Bretchko. RF Circuit Design Theory and Applications[M].第 1 版.王子宇 张肇仪 徐承和 等译. 北京:电子工业出版社,2002. 270～276
【8】 陈邦媛.射频通信电路[M].第 1 版.北京:科学出版社,2002. 18～20
【9】 陶蕤,王志功,谢婷婷 等. 2.9GHz 0.35μm CMOS 低噪声放大器[J].电子学报,2001,29(11):1530 ～1532
【10】Chang-Wan Kim,Min-Suk Kang,Phan Tuan Anh,et al. An Ultra-Wideband CMOS Low Noise Amplifier for 3-5 GHz UWB System[J].IEEE Journal of Solid-State Circuits,2005,40(2):544～547
【11】Derek K. Shaeffer , Thomas H.Lee. A 1.5-V, 1.5-GHz CMOS Low Noise Amplifier[J].IEEE Journal of Solid-State Circuits,1997,32(5):745 ～759
【12】B.M.Ballweber, R.Gupta, D.J.Allstot. A fully integrated 0.5-5.5GHz CMOS distributed amplifier [J].IEEE Journal of Solid-State Circuits,2000,35(2):231 ～239
【13】R.C.Liu, K.L.Deng and H.Wang. A 0.6-22 GHz broadband CMOS distributed amplifier [C].IEEE Radio Frequency Integrated Circuits Symposium,2003,103～106
【14】Andrea Bevilacqua,Ali M.Niknejad. An Ultrawideband CMOS Low-Noise Amplifier for 3.1-10.6 GHz Wireless Receivers[J]. IEEE Journal of Solid-State Circuits,2004,39(12):2259～2268
【15】Aly Ismail,Asad A.Abidi. A 3-10 GHz Low-Noise Amplifier With Wideband LC-Ladder Matching Network[J]. IEEE Journal of Solid-State Circuits,2004,39(12):2269～2277
【16】Yang Lu,Kiat Seng Yeo,Jian Guo,et al.1.8V 3.1-10.6GHz CMOS LOW-NOISE AMPLIFIER FOR ULTRA-WIDEBAND APPLICATIONS[J].MICROWAVE AND OPTICAL TECHNOLOGY LETTERS,2005,44(3):299 ～302
【17】吴建辉.CMOS 模拟集成电路分析与设计[M].第 1 版.北京:电子工业出版社,2004. 56～59
【18】林敏,王永海,李永明等,2-GHz CMOS 射频低噪声放大器的设计与测试[J].电子学报,2002,30(9):1278 ～1281
【19】杨柯,赵晖,徐栋麟等.一种 3.3V 2-GHz CMOS 低噪声放大器[J].微电子学,2004,34(3):322～325
【20】姚飞,成步文. 1GHz 0.5μm CMOS 低噪声放大器的设计[J].半导体学报,2004,25(10):1291 ～1295
【21】Byoung Gun Choi,Seok-Bong Hyun,Geumyoung Tak,et al. A Single Transistor Stack Direct-Conversion Mixer for Low-Voltage Low-Power Multi-Band Radios[J].ETRI Journal,2005,27(5):579 ～582
【22】Anh-Tuan Phan,Chang-Wan Kim,Min-Suk Kang,et al. A High Performance CMOS Direct Down Conversion Mixer For UWB System[C]. 2004 Great Lakes Symposium on VLSI, Boston,Massachusetts:2004.377～380
【23】Ming-Da Tsai,Huei Wang.A 0.3-25GHz Ultra-Wideband Mixer Using Commercial 0.18 μm CMOS Technology[J]. IEEE MICROWAVE AND WIRELESS COMPONENTS,2004,14(11):522～524
【24】Pran Kanai Saha,Nobuo Sasaki and Takamaro Kikkawa.A CMOS UWB Transmitter for Intra/Inter-chip Wireless Communication[C]. ISSSTA2004,Sydeny,Auatralia:2004,962～966
【25】张维承. CMOS 低噪声放大器与混频器中的噪声和非线性分析:[硕士学位论文] [D]. 浙江:浙江大学,2003
【26】Payam Heydari.Design Considerations for Low-Power Ultra Wideband Receivers[C].Proceedings of the Sixth International Symposium on Quality Electronic Design,2005,1～6
【27】Christofer Andersson.Design of a transmitter for Ultra Wideband Radio:[Master thesis] [D].Sweden:Link?pings Universitet,2003
【28】Ramesh Harjani,Jackson Harvey and Robert Sainati.Analog/RF Physical Layer Issues for UWB Systems[C].Proceedings of the 17th International Conference on VLSI Design,
【29】陈新华,陈志恒,王志功等. 0.35μm CMOS 工艺实现的 1.9GHz 上变频器[J].东南大学学报,2001,31(4):10～13
【2】 G.RobertoAiello.Invited-Challenges for Ultra-wideband(UWB) CMOS Integration [C].2003 IEEE MIT-S Digest,USA:2003.361～364
【3】 刘畅.硅集成电感及 CMOS 射频集成电路研究:[博士学位论文] [D]. 上海:中国科学院上海微系统与信息技术研究所,2002
【4】 郭为.无线通信中低噪声低功耗 CMOS 射频接收芯片设计:[硕士学位论文] [D]. 浙江:浙江大学,2003
【5】 Behzad Razavi. Design of Analog CMOS Integrated Circuits[M].第 1 版.陈贵灿 程军 张瑞智等译.西安:西安交通大学出版社,2003.473～477
【6】 Thomas H.Lee. The Design of CMOS Radio-Frequency Integrated Circuits[M].第 1 版.余志平 周润德 等译. 北京:电子工业出版社,2004. 197～201
【7】 Reinhold Ludwig,Pavel Bretchko. RF Circuit Design Theory and Applications[M].第 1 版.王子宇 张肇仪 徐承和 等译. 北京:电子工业出版社,2002. 270～276
【8】 陈邦媛.射频通信电路[M].第 1 版.北京:科学出版社,2002. 18～20
【9】 陶蕤,王志功,谢婷婷 等. 2.9GHz 0.35μm CMOS 低噪声放大器[J].电子学报,2001,29(11):1530 ～1532
【10】Chang-Wan Kim,Min-Suk Kang,Phan Tuan Anh,et al. An Ultra-Wideband CMOS Low Noise Amplifier for 3-5 GHz UWB System[J].IEEE Journal of Solid-State Circuits,2005,40(2):544～547
【11】Derek K. Shaeffer , Thomas H.Lee. A 1.5-V, 1.5-GHz CMOS Low Noise Amplifier[J].IEEE Journal of Solid-State Circuits,1997,32(5):745 ～759
【12】B.M.Ballweber, R.Gupta, D.J.Allstot. A fully integrated 0.5-5.5GHz CMOS distributed amplifier [J].IEEE Journal of Solid-State Circuits,2000,35(2):231 ～239
【13】R.C.Liu, K.L.Deng and H.Wang. A 0.6-22 GHz broadband CMOS distributed amplifier [C].IEEE Radio Frequency Integrated Circuits Symposium,2003,103～106
【14】Andrea Bevilacqua,Ali M.Niknejad. An Ultrawideband CMOS Low-Noise Amplifier for 3.1-10.6 GHz Wireless Receivers[J]. IEEE Journal of Solid-State Circuits,2004,39(12):2259～2268
【15】Aly Ismail,Asad A.Abidi. A 3-10 GHz Low-Noise Amplifier With Wideband LC-Ladder Matching Network[J]. IEEE Journal of Solid-State Circuits,2004,39(12):2269～2277
【16】Yang Lu,Kiat Seng Yeo,Jian Guo,et al.1.8V 3.1-10.6GHz CMOS LOW-NOISE AMPLIFIER FOR ULTRA-WIDEBAND APPLICATIONS[J].MICROWAVE AND OPTICAL TECHNOLOGY LETTERS,2005,44(3):299 ～302
【17】吴建辉.CMOS 模拟集成电路分析与设计[M].第 1 版.北京:电子工业出版社,2004. 56～59
【18】林敏,王永海,李永明等,2-GHz CMOS 射频低噪声放大器的设计与测试[J].电子学报,2002,30(9):1278 ～1281
【19】杨柯,赵晖,徐栋麟等.一种 3.3V 2-GHz CMOS 低噪声放大器[J].微电子学,2004,34(3):322～325
【20】姚飞,成步文. 1GHz 0.5μm CMOS 低噪声放大器的设计[J].半导体学报,2004,25(10):1291 ～1295
【21】Byoung Gun Choi,Seok-Bong Hyun,Geumyoung Tak,et al. A Single Transistor Stack Direct-Conversion Mixer for Low-Voltage Low-Power Multi-Band Radios[J].ETRI Journal,2005,27(5):579 ～582
【22】Anh-Tuan Phan,Chang-Wan Kim,Min-Suk Kang,et al. A High Performance CMOS Direct Down Conversion Mixer For UWB System[C]. 2004 Great Lakes Symposium on VLSI, Boston,Massachusetts:2004.377～380
【23】Ming-Da Tsai,Huei Wang.A 0.3-25GHz Ultra-Wideband Mixer Using Commercial 0.18 μm CMOS Technology[J]. IEEE MICROWAVE AND WIRELESS COMPONENTS,2004,14(11):522～524
【24】Pran Kanai Saha,Nobuo Sasaki and Takamaro Kikkawa.A CMOS UWB Transmitter for Intra/Inter-chip Wireless Communication[C]. ISSSTA2004,Sydeny,Auatralia:2004,962～966
【25】张维承. CMOS 低噪声放大器与混频器中的噪声和非线性分析:[硕士学位论文] [D]. 浙江:浙江大学,2003
【26】Payam Heydari.Design Considerations for Low-Power Ultra Wideband Receivers[C].Proceedings of the Sixth International Symposium on Quality Electronic Design,2005,1～6
【27】Christofer Andersson.Design of a transmitter for Ultra Wideband Radio:[Master thesis] [D].Sweden:Link?pings Universitet,2003
【28】Ramesh Harjani,Jackson Harvey and Robert Sainati.Analog/RF Physical Layer Issues for UWB Systems[C].Proceedings of the 17th International Conference on VLSI Design,
【29】陈新华,陈志恒,王志功等. 0.35μm CMOS 工艺实现的 1.9GHz 上变频器[J].东南大学学报,2001,31(4):10～13