n-ZnO/p-GaN异质结发光器件的制备及其光电性能研究
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摘要
ZnO是一种II-VI族氧化物半导体材料，在室温下具有较宽的直接带隙（3.37eV）和较高的激子束缚能（60meV），是当前实现短波长光电应用尤其是蓝-紫外发光二极管（LED）和紫外探测器件的最佳材料。尽管ZnO材料的p型掺杂技术取得了一定进展，然而目前可重复、高质量的p型ZnO材料却一直难以实现，这使得ZnO基同质结LED的研究受到严重限制。由于GaN和ZnO具有相似的晶体结构（纤锌矿）和相对较小的晶格失配度（1.8%），n-ZnO/p-GaN异质结成为一条可行的实现ZnO材料器件应用的替代方法。本文分别利用脉冲激光沉积技术（PLD）和水热合成法在p-GaN薄膜表面上制备了ZnO薄膜和ZnO纳米棒，构造了n-ZnO/p-GaN异质结LED器件，并研究了不同器件的光电特性。最后，利用PN结能带模型阐释了n-ZnO/p-GaN基LED的载流子复合及发光机制。
本文的主要结果如下：
1.在不同实验条件下，利用PLD技术在Al_2O_3(0001)衬底上生长了ZnO薄膜。采用X射线衍射仪、原子力显微镜及光致发光技术，分别研究了衬底温度、氧气压强和退火温度对ZnO薄膜形貌结构及发光特性的影响。结果表明，当衬底温度为450℃、氧气压强为10Pa时，ZnO薄膜具有最好的结晶质量；随着退火温度的升高，ZnO薄膜的结晶质量先提高后降低，在800℃退火时ZnO薄膜的结晶质量最高。同时我们还发现，衬底温度、氧气压强和退火温度等条件对ZnO薄膜的光致发光特性影响较大。此外，我们还利用水热合成法在Al_2O_3(0001)衬底上制备了高度取向的ZnO纳米棒阵列，研究了ZnO薄膜种子层对ZnO纳米棒结构和发光性质的影响。
2.我们利用PLD技术在p-GaN表面上制备了ZnO薄膜并构造了n-ZnO/p-GaN异质结LED器件，研究了该器件的电致发光特性。结果表明，该器件的电致发光光谱表现出中心波长处于430nm附近的蓝光发射。与ZnO和GaN的光致发光光谱比较后可以推断，器件的电致发光来自于p-GaN一侧的深能级复合发光。基于Anderson能带模型，我们分析了该器件的载流子复合机制。尽管n-ZnO和p-GaN的界面对电子和空穴的势垒高度基本相等，但由于n-ZnO薄膜中电子的浓度和迁移率要远大于p-GaN中空穴的浓度和迁移率，因此相对于空穴注入，电子从n-ZnO一侧向p-GaN一侧的注入更占据优势。
3.为了限制电子从n-ZnO一侧的注入并抑制GaN一侧的光发射，我们利用PLD技术制备了具有不同界面层结构的n-ZnO/p-GaN基PIN型异质结LED。本文中使用的电子阻挡层包括MgO、AlN、ZnS、Ga_2O_3及i-ZnO等半导体材料。由于MgO/ZnO（ΔEC=3.55eV）和AlN/ZnO（ΔEC=3.29eV）界面存在较大的导带补偿，电子可以被有效的被界面层限制在ZnO层。实验结果表明，n-ZnO/MgO/p-GaN和n-ZnO/AlN/p-GaN器件的电致发光光谱主要由来自ZnO材料的紫外发射组成。此外，尽管Ga_2O_3/ZnO（1.85eV）和ZnS/ZnO（0.45eV）界面的导带补偿值较小，但是Ga_2O_3和ZnS作为阻挡层可使界面的价带补偿值减小（分别为0.20eV和0.14eV），这大大降低了界面对空穴的势垒高度，使得空穴更容易从GaN一侧向ZnO一侧注入。结果发现，n-ZnO/ZnS/p-GaN和n-ZnO/Ga_2O_3/p-GaN异质结均表现出较强的紫外发射。另外，我们还利用未掺杂的高阻ZnO薄膜（i-ZnO）制备了n-ZnO:Ga/i-ZnO/p-GaN异质结LED。由于i-ZnO薄膜拥有较低的电子浓度，电子和空穴在正向偏压下分别从n-ZnO:Ga和p-GaN层向i-ZnO层注入，因此器件表现出了来自i-ZnO层的紫外发射。
4.利用水热合成法直接在p-GaN表面上制备了ZnO纳米棒阵列，构造了n-ZnO/p-GaN异质结LED器件。尽管没有使用荧光粉，器件在反向电压下表现出了较强的白光发射。我们认为，这种发光现象可能是由界面的隧穿效应引起的。另外，在p-GaN表面上生长一层ZnO薄膜作为种子层后制备ZnO纳米棒阵列时，ZnO纳米棒/i-ZnO/p-GaN异质结器件的电致发光光谱表现出紫外-蓝光发射，比较两种器件的结构后认为这种不同的发光特性可能是由于两器件不同的界面层而引起的。
Zinc oxide (ZnO), a II-VI oxide semiconductor with a wide direct band gap (3.37eV) and alarge exciton binding energy (60meV) at room temperature, has been considered as a potentialcandidate material for short-wavelength optoelectronic applications, especially for blue toultraviolet (UV) light emitting diode (LED) and UV detector devices. However, althoughprogress has been made in p-type doping of ZnO, ZnO-based homojunction LEDs has sufferedfrom lack of reproducible and high-quality p-type materials. As an alternative approach tohomojunction, n-ZnO/p-GaN heterojunction has been proposed as attractive candidates fordevice applications, for ZnO and GaN have similar lattice structure (wurtzite) and relativelysmall lattice mismatch (1.8%). In this study, ZnO thin films and nanorods were grown by pulsedlaser deposition (PLD) and hydrothermal synthesis on p-GaN to form n-ZnO/p-GaNheterojunction LEDs, respectively. The optoelectronic properties of different devices have beenstudied, and an appropriate band model of PN junction has been constructed for illuminating themechanism of the carrier recombination characteristics and luminescence properties of ZnO/GaNbased LED.
The major findings of this thesis are as follows:
1. ZnO films have been deposited on Al_2O_3(0001) substrate under the different experimentalcondition by PLD technique. With the X-ray diffraction (XRD), atomic force microscopy (AFM)and photoluminescence (PL), the infuences of the substrates temperature, oxygen pressure andannealing temperature on the photoluminescence properties of ZnO thin flms were characterized.The results show that, the ZnO thin flms which were deposited in10Pa oxygen atmospheresand at450℃substrate temperature have the best surface morphology and crystalline quality.And the crystalline quality of ZnO film first increases and then decreases with the annealingtemperature increasing, reaching the best at800℃. It was shown that the substrates temperature,oxygen pressure and annealing temperature have significant effect on the photoluminescenceproperties of ZnO thin films. Furthermore, the highly oriented ZnO nanorods are prepared on theAl_2O_3(0001) substrate by hydrothermal method, and the effects of seed layer on the structureand photoluminescence of ZnO nanorods are investigated.
2. ZnO flms were grown on the p-GaN substrate by PLD and the n-ZnO/p-GaNheterojunction LEDs were fabricated. The electroluminescence (EL) properties of then-ZnO/p-GaN heterojunction diodes have been studied and all the EL spectra display onebroadened emission band centered at about430nm. Compared with the PL spectra, it can be easily identified that the EL emission of n-ZnO/p-GaN LED originates from the deep levelrecombination in the p-GaN layer. The mechanisms of radiative recombination in n-ZnO/p-GaNheterojunction LEDs have been understood by examining the energy band structure. Althoughthe barrier heights for electrons and holes are almost the same, the electron injection from n-ZnOcan prevail over the hole injection from p-GaN, by reason that the electron concentration andmobility in the n-ZnO films are higher than the hole concentration and mobility in the p-GaNlayer.
3. To block the injection from ZnO and suppress the emission from GaN, n-ZnO/p-GaNheterojunction light emitting diodes with different interfacial layers were fabricated by PLD.Wide band gap materials such as MgO, AlN, ZnS, Ga_2O_3and i-ZnO,have been introduced inton-ZnO film/p-GaN LEDs to fabricate the PIN light emitting diodes. Due to the largeconduction-band offsets (ΔEC) for MgO/ZnO (ΔEC=3.55eV) and AlN/ZnO (ΔEC=3.29eV)interfaces, the interfacial layers can effectively block electrons injection from ZnO and improvedEL performances can be observed from n-ZnO/MgO/p-GaN and n-ZnO/AlN/p-GaN LEDs.Moreover, although the ΔECfor the Ga_2O_3/ZnO (1.85eV) and ZnS/ZnO (0.45eV) interface aremuch smaller than that of the MgO/ZnO, AlN/ZnO interfaces, a much smaller barrier heightsΔEV(0.20eV and0.14eV) for hole can make hole injection from GaN to ZnO more easily. As aresult, signifcant improvement of ultraviolet EL was observed in n-ZnO/ZnS/p-GaN andn-ZnO/Ga_2O_3/p-GaN heterojunction LED. Furthermore, an n-ZnO:Ga/p-GaN heterojunctionLED with i-ZnO interfacial layer was fabricated. The i-ZnO layer with a low electronconcentration in the n-ZnO:Ga/i-ZnO/p-GaN structure leads to the injection of electrons fromn-ZnO:Ga and holes from p-GaN into the i-ZnO layer to produce ultraviolet emission.
4. Heterojunction LEDs based on arrays of ZnO nanorods were fabricated on p-GaN films byhydrothermal method. Without any phosphors, white-light EL from ZnO nanorods/p-GaNheterojunction LEDs operated at reverse breakdown bias was observed. The tunneling effect inthe interface can be charged for the possible mechanisms. With the ZnO seed layer, the ELspectra of ZnO nanorods/i-ZnO/p-GaN exhibit a broad emission peak from ultraviolet to visibleand the EL mechanisms infuenced by the interfacial layer are discussed.
本文的主要结果如下：
1.在不同实验条件下，利用PLD技术在Al_2O_3(0001)衬底上生长了ZnO薄膜。采用X射线衍射仪、原子力显微镜及光致发光技术，分别研究了衬底温度、氧气压强和退火温度对ZnO薄膜形貌结构及发光特性的影响。结果表明，当衬底温度为450℃、氧气压强为10Pa时，ZnO薄膜具有最好的结晶质量；随着退火温度的升高，ZnO薄膜的结晶质量先提高后降低，在800℃退火时ZnO薄膜的结晶质量最高。同时我们还发现，衬底温度、氧气压强和退火温度等条件对ZnO薄膜的光致发光特性影响较大。此外，我们还利用水热合成法在Al_2O_3(0001)衬底上制备了高度取向的ZnO纳米棒阵列，研究了ZnO薄膜种子层对ZnO纳米棒结构和发光性质的影响。
2.我们利用PLD技术在p-GaN表面上制备了ZnO薄膜并构造了n-ZnO/p-GaN异质结LED器件，研究了该器件的电致发光特性。结果表明，该器件的电致发光光谱表现出中心波长处于430nm附近的蓝光发射。与ZnO和GaN的光致发光光谱比较后可以推断，器件的电致发光来自于p-GaN一侧的深能级复合发光。基于Anderson能带模型，我们分析了该器件的载流子复合机制。尽管n-ZnO和p-GaN的界面对电子和空穴的势垒高度基本相等，但由于n-ZnO薄膜中电子的浓度和迁移率要远大于p-GaN中空穴的浓度和迁移率，因此相对于空穴注入，电子从n-ZnO一侧向p-GaN一侧的注入更占据优势。
3.为了限制电子从n-ZnO一侧的注入并抑制GaN一侧的光发射，我们利用PLD技术制备了具有不同界面层结构的n-ZnO/p-GaN基PIN型异质结LED。本文中使用的电子阻挡层包括MgO、AlN、ZnS、Ga_2O_3及i-ZnO等半导体材料。由于MgO/ZnO（ΔEC=3.55eV）和AlN/ZnO（ΔEC=3.29eV）界面存在较大的导带补偿，电子可以被有效的被界面层限制在ZnO层。实验结果表明，n-ZnO/MgO/p-GaN和n-ZnO/AlN/p-GaN器件的电致发光光谱主要由来自ZnO材料的紫外发射组成。此外，尽管Ga_2O_3/ZnO（1.85eV）和ZnS/ZnO（0.45eV）界面的导带补偿值较小，但是Ga_2O_3和ZnS作为阻挡层可使界面的价带补偿值减小（分别为0.20eV和0.14eV），这大大降低了界面对空穴的势垒高度，使得空穴更容易从GaN一侧向ZnO一侧注入。结果发现，n-ZnO/ZnS/p-GaN和n-ZnO/Ga_2O_3/p-GaN异质结均表现出较强的紫外发射。另外，我们还利用未掺杂的高阻ZnO薄膜（i-ZnO）制备了n-ZnO:Ga/i-ZnO/p-GaN异质结LED。由于i-ZnO薄膜拥有较低的电子浓度，电子和空穴在正向偏压下分别从n-ZnO:Ga和p-GaN层向i-ZnO层注入，因此器件表现出了来自i-ZnO层的紫外发射。
4.利用水热合成法直接在p-GaN表面上制备了ZnO纳米棒阵列，构造了n-ZnO/p-GaN异质结LED器件。尽管没有使用荧光粉，器件在反向电压下表现出了较强的白光发射。我们认为，这种发光现象可能是由界面的隧穿效应引起的。另外，在p-GaN表面上生长一层ZnO薄膜作为种子层后制备ZnO纳米棒阵列时，ZnO纳米棒/i-ZnO/p-GaN异质结器件的电致发光光谱表现出紫外-蓝光发射，比较两种器件的结构后认为这种不同的发光特性可能是由于两器件不同的界面层而引起的。
Zinc oxide (ZnO), a II-VI oxide semiconductor with a wide direct band gap (3.37eV) and alarge exciton binding energy (60meV) at room temperature, has been considered as a potentialcandidate material for short-wavelength optoelectronic applications, especially for blue toultraviolet (UV) light emitting diode (LED) and UV detector devices. However, althoughprogress has been made in p-type doping of ZnO, ZnO-based homojunction LEDs has sufferedfrom lack of reproducible and high-quality p-type materials. As an alternative approach tohomojunction, n-ZnO/p-GaN heterojunction has been proposed as attractive candidates fordevice applications, for ZnO and GaN have similar lattice structure (wurtzite) and relativelysmall lattice mismatch (1.8%). In this study, ZnO thin films and nanorods were grown by pulsedlaser deposition (PLD) and hydrothermal synthesis on p-GaN to form n-ZnO/p-GaNheterojunction LEDs, respectively. The optoelectronic properties of different devices have beenstudied, and an appropriate band model of PN junction has been constructed for illuminating themechanism of the carrier recombination characteristics and luminescence properties of ZnO/GaNbased LED.
The major findings of this thesis are as follows:
1. ZnO films have been deposited on Al_2O_3(0001) substrate under the different experimentalcondition by PLD technique. With the X-ray diffraction (XRD), atomic force microscopy (AFM)and photoluminescence (PL), the infuences of the substrates temperature, oxygen pressure andannealing temperature on the photoluminescence properties of ZnO thin flms were characterized.The results show that, the ZnO thin flms which were deposited in10Pa oxygen atmospheresand at450℃substrate temperature have the best surface morphology and crystalline quality.And the crystalline quality of ZnO film first increases and then decreases with the annealingtemperature increasing, reaching the best at800℃. It was shown that the substrates temperature,oxygen pressure and annealing temperature have significant effect on the photoluminescenceproperties of ZnO thin films. Furthermore, the highly oriented ZnO nanorods are prepared on theAl_2O_3(0001) substrate by hydrothermal method, and the effects of seed layer on the structureand photoluminescence of ZnO nanorods are investigated.
2. ZnO flms were grown on the p-GaN substrate by PLD and the n-ZnO/p-GaNheterojunction LEDs were fabricated. The electroluminescence (EL) properties of then-ZnO/p-GaN heterojunction diodes have been studied and all the EL spectra display onebroadened emission band centered at about430nm. Compared with the PL spectra, it can be easily identified that the EL emission of n-ZnO/p-GaN LED originates from the deep levelrecombination in the p-GaN layer. The mechanisms of radiative recombination in n-ZnO/p-GaNheterojunction LEDs have been understood by examining the energy band structure. Althoughthe barrier heights for electrons and holes are almost the same, the electron injection from n-ZnOcan prevail over the hole injection from p-GaN, by reason that the electron concentration andmobility in the n-ZnO films are higher than the hole concentration and mobility in the p-GaNlayer.
3. To block the injection from ZnO and suppress the emission from GaN, n-ZnO/p-GaNheterojunction light emitting diodes with different interfacial layers were fabricated by PLD.Wide band gap materials such as MgO, AlN, ZnS, Ga_2O_3and i-ZnO,have been introduced inton-ZnO film/p-GaN LEDs to fabricate the PIN light emitting diodes. Due to the largeconduction-band offsets (ΔEC) for MgO/ZnO (ΔEC=3.55eV) and AlN/ZnO (ΔEC=3.29eV)interfaces, the interfacial layers can effectively block electrons injection from ZnO and improvedEL performances can be observed from n-ZnO/MgO/p-GaN and n-ZnO/AlN/p-GaN LEDs.Moreover, although the ΔECfor the Ga_2O_3/ZnO (1.85eV) and ZnS/ZnO (0.45eV) interface aremuch smaller than that of the MgO/ZnO, AlN/ZnO interfaces, a much smaller barrier heightsΔEV(0.20eV and0.14eV) for hole can make hole injection from GaN to ZnO more easily. As aresult, signifcant improvement of ultraviolet EL was observed in n-ZnO/ZnS/p-GaN andn-ZnO/Ga_2O_3/p-GaN heterojunction LED. Furthermore, an n-ZnO:Ga/p-GaN heterojunctionLED with i-ZnO interfacial layer was fabricated. The i-ZnO layer with a low electronconcentration in the n-ZnO:Ga/i-ZnO/p-GaN structure leads to the injection of electrons fromn-ZnO:Ga and holes from p-GaN into the i-ZnO layer to produce ultraviolet emission.
4. Heterojunction LEDs based on arrays of ZnO nanorods were fabricated on p-GaN films byhydrothermal method. Without any phosphors, white-light EL from ZnO nanorods/p-GaNheterojunction LEDs operated at reverse breakdown bias was observed. The tunneling effect inthe interface can be charged for the possible mechanisms. With the ZnO seed layer, the ELspectra of ZnO nanorods/i-ZnO/p-GaN exhibit a broad emission peak from ultraviolet to visibleand the EL mechanisms infuenced by the interfacial layer are discussed.
引文
[1] Nick Holonyak, S. F. Bevacqua. Coherent (Visible) Light Emission from Ga(As1xPx) Junctions [J]. Appl.Phys. Lett.,1962,1(4):82-83.
[2] Nakamura S, Fasol G. The Blue Laser Diode [M]. Berlin: Springer Press,1996,1-5.
[3] Takashi Miyoshi, Tomoya Yanamoto, Tokuya Kozaki, Shin-ichi Nagahama, Yukio Narukawa, MasahikoSano, Takao Yamada, Takashi Mukai. Recent status of white LEDs and nitride LDs [J]. Proc. of SPIE,2008,6894,689414(1-7).
[4] Light-emitting diode. Available: http://en.wikipedia.org/wiki/Led.
[5]叶良修.半导体物理学[M].北京：高等教育出版社，2007.582-583.
[6] Tsunemasa Taguchi. Recent progress and future prospect of high-performance near-UV based white LEDsfrom ECO lighting to medical application [J]. Proc. of SPIE,2009,7422,74220B (1-15).
[7] P. Zu, Z.K. Tang, G.K.L. Wong, M. Kawasaki, A. Ohtomo, H. Koinuma, Y. Segawa. Ultravioletspontaneous and stimulated emissions from ZnO microcrystallite thin films at room temperature [J]. SolidState Commun,1997,103(8),459-463.
[8] Service R F. Will UV lasers beat the blues [J]. Science,1997,276(5314),895.
[9] Z. K. Tang, G. K. L. Wong, P. Yu, M. Kawasaki, A. Ohtomo, H. Koinuma, Y. Segawa. Room-temperatureultraviolet laser emission from self-assembled ZnO microcrystalline thin films [J]. Appl. Phys. Lett.,1998,72(25),3270-3272.
[10] Cao H, ZhaoY. G, Ong, H. C, Ho S. T, Dai J. Y, Wu J. Y, Chang R. P. H. Ultraviolet lasing in resonatorsformed by scattering in semiconductor polycrystalline thin films[J]. Appl. Phys. Lett.,1998,73(25),3656-3658.
[11] Wiersma D. The smallest random laser [J]. Nature,2000,406(13),132-133.
[12] B. K. Meyer, H. Alves, D. M. Hofmann, W. Kriegseis, D. Forster, F. Bertram, J. Christen, A. Hoffmann,M. Stra burg, M. Dworzak, U. Haboeck and A. V. Rodina. Bound exciton and donor-acceptor pairrecombinations in ZnO [J]. Phys. Stat. Sol.(b),2004,241,231-260.
[13] N.H. Alvi, M. Willander, O. Nur. The effect of the post-growth annealing on the electroluminescenceproperties of n-ZnO nanorods/p-GaN light emitting diodes [J]. Superlattices and Microstructures,2010,47,754-761.
[14] X.T. Zhang, Y.C. Liu, Z.Z. Zhi, J.Y. Zhang, Y.M. Lu, D.Z. Shen, W. Xu, X.W. Fan, X.G. Kong.Temperature dependence of excitonic luminescence from nanocrystalline ZnO flms [J]. Journal ofLuminescence,2002,99,149-154.
[15] D. Sentosa, B. Liu, L.M. Wong, Y.V. Lim, T.I. Wong, Y.L. Foo, H.D. Sun, S.J. Wang. Temperaturedependent photoluminescence studies of ZnO thin flm grown on (111) YSZ substrate [J]. Journal ofCrystal Growth,2011,319,8-12.
[16] Holtz PO, M onemar B, Lo zykowski H J. Optical proper ties of Ag-related centers in bulk ZnSe [J]. Phys.Rev. B,1985,32,986-996.
[17] Jiang D S, Jung H, Ploog K. Temperature dependence of photoluminescence from GaAs single andmultiple quantum-well heterostructures grown by molecular beam epitaxy [J]. J. Appl. Phys.,1988,64,1371-1377.
[18] M. S. Oh, D. K. Hwang, D. J. Seong, H. S. Hwang, S. J. Park, E. D. Kim. Improvement of characteristicsof Ga-doped ZnO grown by pulsed laser deposition using plasma enhanced oxygen radicals [J]. J.Electrochem. Soc.,2008,155, D599-D603.
[19] K. K. Kim, S. Niki, J. Y. Oh, J. O. Song, T. Y. Seong, S. J. Park, S. Fujita, S. W. Kim. High electronconcentration and mobility in Al-doped n-ZnO epilayer achieved via dopant activation using rapidthermal annealing [J]. J. Appl. Phys.,2005,97,066-103.
[20] N. Ito, Y. Sato, P. K. Song, A. Kaijio, K. Inoue, Y. Shigesato. Electrical and optical properties ofamorphous indium zinc oxide flms [J]. Thin Solid Films,2006,496,99-103.
[21] Tadatsugu Minami. New n-Type Transparent Conducting Oxides [J]. MRS BULLETIN,2000,25,38-44.
[22]叶志镇,吕建国,张银珠,何海平.氧化锌半导体材料掺杂技术与应用[M].浙江:浙江大学出版社2009.18-77.
[23] O. Maksimov. Recent advances and novel approaches of p-type doping of zinc oxide [J]. Rev. Adv. Mater.Sci.,2010,24,26-34.
[24] Yong-Seok Choi, Jang-Won Kang, Dae-Kue Hwang, Seong-Ju Park. Recent Advances in ZnO-BasedLight-Emitting Diodes [J]. IEEE Transactions on Electron Devices,2010,57,26-41.
[25] Atsushi Tsukazaki, Akira Ohtomo, Takeyoshi Onuma, Makoto Ohtani, Takayuki Makino, MasatomoSumiya, Keita Ohtani, Shigefusa F. Chichibu, Syunrou Fuke, Yusaburou Segawa, Hideo Ohno, HideomiKoinuma, Masashi Kawasaki. Repeated temperature modulation epitaxy for p-type doping andlight-emitting diode based on ZnO [J]. Nature Mater,2005,4,42-46.
[26] Jae-Hong Lim, Chang-Ku Kang, Kyoung-Kook Kim, Il-Kyu Park, Dae-Kue Hwang, Seong-Ju Park. UVElectroluminescence Emission from ZnO Light-Emitting Diodes Grown by High-Temperature Radiofrequency sputtering [J].Adv. Mater.2006,18,2720-2724.
[27] Guo-Tong Du, Wang Zhao, Guo-Guang Wu, Zhi-Feng Shi, Xiao-Chuan Xia,Y ang Liu, Hong-Wei Liang,Xin Dong, Yan Ma, Bao-Lin Zhang. Electrically pumped lasing from p-ZnO/n-GaN heterojunction diodes[J]. Appl. Phys. Lett.,2012,101,053503(1-3).
[28] Dae-Kue Hwang, Min-Suk Oh, Jae-Hong Lim, Seong-Ju Park. ZnO thin flms and light-emitting diodes[J]. J. Phys. D: Appl. Phys.,2007,40, R387-R412.
[29] Chang S P, Chuang R W, Chang S J, Chiou Y Z, Lu C Y. MBE n-ZnO/MOCVD p-GaN heterojunctionlight-emitting diode [J]. Thin Solid Films,2009,517,5054-5056.
[30] Wang T, Wu H, Chen C and Liu C. Growth, optical, and electrical properties of nonpolar m-plane ZnO onp-Si substrates with Al2O3buffer layers [J]. Appl. Phys. Lett.,2012,100011901(1-3).
[31] Shih Y T, Wu M K, Chen M J, Cheng Y C, Yang J R and Shiojiri M2010ZnO-based heterojunctionlight-emitting diodes on p-SiC(4H) grown by atomic layer deposition [J]. Appl. Phys. B,2010,98767-772.
[32] Süleyman Tekmen, Emre Gür, Hatice As l, Kübra nar, Cevdet Co kun, Sebahattin Tüzemen.Structural, optical, and electrical properties of n-ZnO/p-GaAs heterojunction [J]. Physica status solidi (a),2010,207,1464-1467.
[33] Hao Long, Guojia Fang, Huihui Huang, Xiaoming Mo, Wei Xia, Binzhong Dong, XianquanMeng, Xingzhong Zhao. Ultraviolet electroluminescence from ZnO/NiO-based heterojunctionlight-emitting diodes [J]. Appl. Phys. Lett.,2009,95,013509(1-3).
[34] B. Ling, X.W. Suna, J.L. Zhao, S.T. Tan, Z.L. Dong, Y. Yang, H.Y. Yu, K.C. Qi. Electroluminescencefrom a n-ZnO nanorod/p-CuAlO2heterojunction light-emitting diode [J]. Physica E,2009,41,635-639.
[35] R. D. Vispute, V. Talyansky, S. Choopun, R. P. Sharma, T. Venkatesan, M. He, X. Tang, J. B. Halpern,M. G. Spenser, Y. X. Li, L. G. Salamansa Riba, A. A. Illadis, K. A. Jones. Heteroepitaxy of ZnO on GaNand its implications for fabrication of hybrid optoelectronic devices [J]. Appl. Phys. Lett.,1998,73,348-350.
[36] S.-K. Hong, H.-J. Ko, Y. Chen, T. J. Yao. Defect characterization in epitaxial ZnO/epi-GaN/Al2O3heterostructures: transmission electron microscopy and triple-axis X-ray diffractometry [J]. J. Cryst.Growth,2000,209,537-541.
[37] M. V. Chukichev, B. M. Ataev, V. V. Mamedov, Y. I. Alivov, and I. I. Khodos. Cathodoluminescence ofZnO/GaN/α-Al2O3heteroepitaxial structures grown by chemical vapor deposition [J]. Semiconductors,2002,36,977-980.
[38] Qing-Xuan Yu, Bo Xu, Qi-Hong Wu, Yuan Liao, Guan-Zhong Wang, Rong-Chuan Fang, Hsin-Ying Lee,Ching-Ting Lee. Optical properties of ZnO-GaN heterostructure and its near-ultraviolet light-emittingdiode [J]. Appl. Phys. Lett.,2003,83,4713-4715.
[39] Ya. I. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, B. M. Ataev. Observation of430nmelectroluminescence from ZnO/GaN heterojunction light-emitting diodes [J]. Appl. Phys. Lett.,2003,83,2943-2945.
[40] Y. I. Alivov, E. V. Kalinina, A. E. Cherenkov, David C. Look, B. M. Ataev, A. K. Omaev, M. V.Chukichev, D. M. Bagnall. Fabrication and Characterization of n-ZnO/p-AlGaN HeterojunctionLight-Emitting Diodes on6H-SiC Substrates [J]. Appl. Phys. Lett.,2003,83,4719-4721.
[41] Cheng Pin Chen, Min Yung Ke, Chien Cheng Liu, and Yuan Jen Chang, Fu Hsiang Yang, Jian JangHuang. Observation of394nm electroluminescence from low-temperature sputtered n-ZnO/SiO2thinflms on top of the p-GaN heterostructure [J]. Appl. Phys. Lett.,2007,91,091107(1-3).
[42] H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M.Lu, Z. K. Tang. Ultralow-Threshold Laser Realized in Zinc Oxide [J]. Adv. Mater.,2009,211613-1617.
[43] J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui,A. M. Wowchak, A. M. Dabiran, P. P. Chow. Improved electroluminescence from n-ZnO/AlN/p-GaNheterojunction light-emitting diodes [J]. Appl. Phys. Lett.,2010,96,201102(1-3).
[44] Huihui Huang, Guojia Fang, Yuan Li, Songzhan Li, Xiaoming Mo, Hao Long, Haoning Wang, David L.Carroll, Xingzhong Zhao. Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaNheterojunction light emitting diodes [J]. Appl. Phys. Lett.,2012,100,233502(1-4).
[45] Hui Wang, Zhifeng Shi, Baolin Zhang, Guoguang Wu, Jin Wang, Yang Zhao,Yan Ma, Guotong Du, XinDong. Study on the luminescence properties of n-ZnO/i-NiO/n-GaN isotype heterojunction diodes [J].Journal of Luminescence,2013,135,16-163.
[46] Lichun Zhang, Qingshan Li, Liang Shang, Zhongjun Zhang, Ruizhi Huang, Fengzhou Zhao.Electroluminescence from n-ZnO: Ga/p-GaN heterojunction light-emitting diodes with differentinterfacial layers [J]. J. Phys. D: Appl. Phys.,2012,45485103(1-6).
[47] Yuanda Liu, Hongwei Liang, Xiaochuan Xia, Rensheng Shen, Yang Liu, Jiming Bian, Guotong Du.Introducing Ga2O3thin flms as novel electron blocking layer to ZnO/p-GaN heterojunction LED[J]. Appl.Phys. B,2012,109605-609.
[48] T. Wang, H. Wu, Z. Wang, C. Chen, C. Liu. Improvement of optical performance of ZnO/GaN p-njunctions with an InGaN interlayer [J]. Appl. Phys. Lett.,2012,101,161905(1-4).
[49] H.Y. XU, Y.C. LIU, Y.X. LIU, C.S. XU, C.L. SHAO, R. MU, Ultraviolet electroluminescence fromp-GaN/i-ZnO/n-ZnO heterojunction light-emitting diodes [J]. Appl. Phys. B,2005,80,871-874.
[50] Elaine Lai, Woong Kim, Peidong Yang. Vertical Nanowire Array-Based Light Emitting Diodes [J]. NanoRes,2008,1,123-128.
[51] O. Lupan, T. Pauporté, B. Viana, P. Aschehoug. Electrodeposition of Cu-doped ZnO nanowire arrays andheterojunction formation with p-GaN for color tunable light emitting diode applications [J].Electrochimica Acta,2011,56,10543-10549.
[52] Chih-Han Chen, Shoou-Jinn Chang, Sheng-Po Chang, Meng-Ju Li, I-Cherng Chen, Ting-Jen Hsueh,Cheng-Liang Hsu. Electroluminescence from n-ZnO nanowires/p-GaN heterostructure light-emittingdiodes [J]. Appl. Phys. Lett.,2009,95,223101(1-3).
[53] R. Guo, J. Nishimura, M. Matsumoto, M. Higashihata, D. Nakamura, T. Okada. Electroluminescence fromZnO nanowire-based p-GaN/n-ZnO heterojunction light-emitting diodes [J]. Appl. Phys. B,2009,94,33-38.
[54] O. Lupan, T. Pauporté, L. Chow, G. Chai, B. Viana, V.V. Ursaki, E. Monaico, I.M. Tiginyanu.Comparative study of the ZnO and Zn1xCdxO nanorod emitters hydrothermally synthesized andelectrodeposited on p-GaN [J]. Applied Surface Science,2012,259,399-405.
[55] Sam-Dong Lee, Yoon-Seok Kim, Min-Su Yi, Jae-Young Choi, Sang-Woo Kim. Morphology Control andElectroluminescence of ZnO Nanorod/GaN Heterojunctions Prepared Using Aqueous Solution [J]. J.Phys. Chem. C,2009,113,8954-8958.
[56] S. G. Zhang, X. W. Zhang, F. T. Si, J. J. Dong, J. X. Wang, X. Liu, Z. G. Yin, H. L. Gao. Ordered ZnOnanorods-based heterojunction light-emitting diodes with graphene current spreading layer [J]. Appl.Phys. Lett.,2012,101,121104(1-4).
[57] Jing Ye, Yu Zhao, Libin Tang, Li-Miao Chen, C. M. Luk, S. F. Yu, S. T. Lee, S. P. Lau. Ultravioletelectroluminescence from two-dimensional ZnO nanomesh/GaN heterojunction light emitting diodes [J].Appl. Phys. Lett.,2011,98,263101(1-3).
[58] Xiao-Mei Zhang, Ming-Yen Lu, Yue Zhang, Lih-J. Chen, Zhong Lin Wang. Fabrication of aHigh-Brightness Blue-Light-Emitting Diode Using a ZnO-Nanowire Array Grown on p-GaN Thin Film[J]. Advanced Materials,2009,21,2767-2770.
[59] Sheng Xu, Chen Xu, Ying Liu, Youfan Hu, Rusen Yang, Qing Yang, Jae-Hyun Ryou, Hee Jin Kim,Zachary Lochner, Suk Choi, Russell Dupuis, Zhong Lin Wang. Ordered Nanowire Array Blue/Near-UVLight Emitting Diodes [J]. Advanced Materials,2010,22,4749-4753.
[60] G. Y. Zhu, C. X. Xu, Y. Lin, Z. L. Shi, J. T. Li, T. Ding, Z. S. Tian, and G. F. Chen.Ultravioletelectroluminescence from horizontal ZnO microrods/GaN heterojunction light-emitting diode array [J].Appl. Phys. Lett.,2012,101,041110(1-4).
[61] N. Bano, S. Zaman, A. Zainelabdin, S. Hussain, I. Hussain, O. Nur, M. Willander. ZnO-organic hybridwhite light emitting diodes grown on flexible plastic using low temperature aqueous chemical method [J].J. Appl. Phy.2010,108,043103(1-5).
[62] Hussain, N. Bano, S. Hussain, O. Nur, M. Willander. Study of intrinsic white light emission and itscomponents from ZnO-nanorods/p-polymer hybrid junctions grown on glass substrates [J]. J. Mater Sci.,2011,46,7437-7442.
[63] Swee Tiam Tan, Junliang Zhao, S. Iwan, Xiao Wei Sun, Xiaohong Tang, Jiandong Ye, M.Bosman, Leijun Tang, Guo-Qiang Lo, K.L. Teo. n-ZnO/n-GaAs Heterostructured White Light-EmittingDiode: Nanoscale Interface Analysis and Electroluminescence Studies [J]. IEEE Transactions on ElectronDevices,2010,57,129-133.
[64] Saraswathi Chirakkara, S. B. Krupanidhi. Gallium and indium co-doped ZnO thin films for white lightemitting diodes [J]. Phys. Status Solid,2012,6,34-36.
[65] Dong Ick Son, Byoung Wook Kwon, Dong Hee Park, Won-Seon Seo, Yeonjin Yi, Basavaraj Angadi,Chang-Lyoul Lee, Won Kook Choi. Emissive ZnO-graphene quantum dots for white-light-emittingdiodes [J]. Nature Nanotechnology,2012,7,465-471.
[66] Arthur H. Reading, Jacob J. Richardson, Chih-Chien Pan, Shuji Nakamura, Steven P. DenBaars. Highefficiency white LEDs with single-crystal ZnO current spreading layers deposited by aqueous solutionepitaxy [J]. Optics Express,2012,20, A13-A19.
[67] L. Zhao, C.S. Xu, Y.X. Liu, C.L. Shao, X.H. Li, Y.C. Liu. A new approach to white light emitting diodesof p-GaN/i-ZnO/n-ZnO heterojunctions [J]. Appl. Phys. B,2008,92,185-188.
[68] Fang Fang, Dongxu Zhao, Xuan Fang, Jinhua Li, Zhipeng Wei, Shaozhuan Wang, Jilong Wu, DezhenShen, Xiaohua Wang. Tunable electroluminescence from n-ZnCdO/p-GaN heterojunction [J]. Journal ofPhysics and Chemistry of Solids,2012,73,217-220.
[69] I. E. Titkov, A. S. Zubrilov, L. A. Delimova, D. V. Mashovets, I. A. Lini chuk, and I. V. Grekhov. WhiteElectroluminescence from ZnO/GaN Structures [J]. Semiconductors,2007,41,564-569.
[70] H. C. Chen, M. J. Chen, Y. H. Huang, W. C. Sun, W. C. Li, J. R. Yang, H. Kuan, M. Shiojiri. White-LightElectroluminescence from n-ZnO/p-GaN Heterojunction Light-Emitting Diodes at Reverse BreakdownBias [J]. IEEE Transactions on Electron Devices,2011,58,3970-3975.
[71] S. Kishwar, K. ul Hasan, N.H. Alvi, P. Klason, O. Nur, M. Willander. A comparative study of theelectrodeposition and the aqueous chemical growth techniques for the utilization of ZnO nanorods onp-GaN for white light emitting diodes [J]. Superlattices and Microstructures,2011,49,32-42.
[72] J R Sadaf, M Q Israr, S Kishwar, O Nur, M Willander. Forward and reverse-biased electroluminescencebehavior of chemically fabricated ZnO nanotubes/GaN interface [J]. Semicond. Sci. Technol.,2011,26,075003(1-6).
[73] N H Alvi, Kamran ul Hasan, Omer Nur, Magnus Willander. The origin of the red emission in n-ZnOnanotubes/p-GaN white light emitting diodes [J]. Nanoscale Research Letters,2011,6,130(1-7).
[74] S. Kishwar, K. ul Hasan, G. Tzamalis, O. Nur, M. Willander, H. S. Kwack, D. Le Si Dang. Electro-opticaland cathodoluminescence properties of low temperature grown ZnO nanorods/p-GaN white light emittingdiodes [J]. Phys. Status Solidi A,2009,207,1-6.
[75] Chih-Han Chen, Shoou-Jinn Chang, Sheng-Po Chang, Meng-Ju Li, I-Cherng Chen, Ting-Jen Hsueh,An-Di Hsu, Cheng-Liang Hsu. Fabrication of a White-Light-Emitting Diode by Doping Gallium into ZnONanowire on a p-GaN Substrate [J]. J. Phys. Chem. C,2010,114,12422-12426.
[76] J. R. Sadaf, M. Q. Israr, S. Kishwar, O. Nur, M. Willander. White Electroluminescence Using ZnONanotubes/GaN Heterostructure Light-Emitting Diode [J]. Nanoscale Res Lett.,2010,5,957-960.
[77] N.H. Alvi, S.M. Usman Ali, S. Hussain, O. Nur and M. Willander. Fabrication and comparative opticalcharacterization of n-ZnO nanostructures (nanowalls, nanorods, nanofowers and nanotubes)/p-GaNwhite-light-emitting diodes [J]. Scripta Materialia,2011,64,697-700.
[1] John R. Arthur. Molecular beam epitaxy [J]. Surface Science,2002,500,189-217.
[2] A.Y. Cho. How molecular beam epitaxy (MBE) began and its projection into the future [J]. Journal ofCrystal Growth,1999,201/202,1-7.
[3] Keiichiro Sakurai, Masahiko Kanehiro, Ken Nakahara, Tetsuhiro Tanabe, Shizuo Fujita, Shigeo Fujita.Effcts of oxygen plasma condition on MBE growth of ZnO [J]. Journal of Crystal Growth,2000,209,522-525.
[4] T. E. Murphy, S. Walavalkar, J. D. Phillips. Epitaxial growth and surface modeling of ZnO on c-planeAl2O3[J]. Appl. Phys. Lett.,2004,85,6338-6340.
[5] W C T Lee1, C E Kendrick, R P Millane, Z Liu, S P Ringer2K Washburn, P T Callaghan, S M Durbin.Porous ZnO nanonetworks grown by molecular beam epitaxy [J]. J. Phys. D: Appl. Phys.,2012,45,135301(1-6).
[6] JAMES J. COLEMAN. Metalorganic Chemical Vapor Deposition for Optoelectronic Devices [J].PROCEEDINGS OF THE IEEE,1997,85,1715-1729.
[7] Alan G. Thompson. MOCVD technology for semiconductors [J]. Materials Letters,1997,30,255-263.
[8] M. Pan, W.E. Fenwick, M. Strassburg, N. Li, H. Kang, M.H. Kane, A. Asghar, S. Gupta, R. Varatharajan, J.Nause, N. El-Zein, P. Fabiano, T. Steiner, I. Ferguson. Metal-organic chemical vapor deposition of ZnO[J]. Journal of Crystal Growth,2006,287,688-693.
[9] K. Remashan, Y. S. Choi, S. J. Park, J. H. Jang. High Performance MOCVD-Grown ZnO Thin-FilmTransistor with a Thin MgZnO Layer at Channel/Gate Insulator Interface [J]. Journal of theElectrochemical Society,2010,157, H1121-H1126.
[10] S.-H. Park, S.-Y. Seo, S.-H. Kim, S.-W. Han. Homoepitaxial ZnO flm growth on vertically aligned ZnOnanorods [J]. Journal of Crystal Growth,2007,303,580-584.
[11] Steven M. George. Atomic Layer Deposition:An Overview [J]. Chem. Rev.2010,110,111-131.
[12] E. Guziewicz, M. Godlewski, T. Krajewski,. Wachnicki, A. Szczepanik, K. Kopalko, A.Wójcik-G odowska, E. Prze dziecka, W. Paszkowicz, E. usakowska, P. Kruszewski, N. Huby, G.Tallarida, S. Ferrari. ZnO grown by atomic layer deposition: A material for transparent electronics andorganic heterojunctions [J]. J.Appl. Phys.,2009,105,122413(1-5).
[13] Seung-Mo Lee, Gregor Grass, Gyeong-Man Kim, Christian Dresbach, Lianbing Zhang, Ulrich G sele,Mato Knez. Low-temperature ZnO atomic layer deposition on biotemplates: flexible photocatalytic ZnOstructures from eggshell membranes [J]. Phys. Chem. Chem. Phys.,2009,11,3608-3614.
[14] Alexandre Pourret, Philippe Guyot-Sionnest, Jeffrey W. Elam. Atomic Layer Deposition of ZnO inQuantum Dot Thin Films [J].Adv. Mater.2008,20,1-4.
[15] J. W. Elam, S. M. George. Growth of ZnO/Al2O3Alloy Films Using Atomic LayerDeposition Techniques[J]. Chem. Mater.,2003,15,1020-1028.
[16] P.J. Kelly, R.D. Arnell. Magnetron sputtering: a review of recent developments and applications [J].Vacuum,2000,56,159-172.
[17] Q.P. Wang, D.H. Zhang, H.L. Ma, X.H. Zhang, X.J. Zhang. Photoluminescence of ZnO flms prepared byr.f. sputtering on different substrates [J]. Applied Surface Science,2003,220,12-18.
[18] Jae Keun Seo, Ki-han Ko, Hyung Jun Cho, Won Seok Choi, Mungi Park, Kyung-han Seo. Synthesis andCharacterization of Al-Doped Zinc Oxide Films by an Radio Frequency Magnetron Sputtering Methodfor Transparent Electrode Applications [J]. Transactions on Electrical and Electronic Materials,2010,11,29-32.
[19] Rashmi Menon, Vinay Gupta, H. H. Tan, K. Sreenivas, C. Jagadish. Origin of stress in radio frequencymagnetron sputtered zinc oxide thin films [J]. J. Appl. Phys.,2011,109,064905(1-6).
[20] Kwang Sik Kim, Hyoun Woo Kim, NamHo Kim. Structural characterization of ZnO flms grown on SiO2by the RF magnetron sputtering [J]. Physica B,2003,334,343-346.
[21] Howard M. Smith andA. F. Turner. Vacuum Deposited Thin Films Using a Ruby Laser [J]. AppliedOptics,1965,4,147-148.
[22] D. Dijkkamp, T. Venkatesan, X. D. Wu, S. A. Shaheen, N. Jisrawi, Y. H. Min Lee, W. L. McLean, M.Croft. Preparation of Y-Ba-Cu oxide superconductor thin films using pulsed laser evaporation from highT(c) bulk material [J]. Appl. Phys. Lett.,1987,51,619-621
[23] V. VasanthiPillay1, K. Vijayalakshmi. Influence of Sputter Deposition Time on the Growth of c-AxisOriented AlN/Si Thin Films for Microelectronic Application [J]. Journal of Minerals and MaterialsCharacterization and Engineering,2012,11,724-729.
[24] P.S. Banks, L. Dinh, B.C. Stuart, M.D. Feit, A.M. Komashko, A.M. Rubenchik, M.D. Perry, W. McLean.Short-pulse laser deposition of diamond-like carbon thin flms [J].Appl. Phys. A,1999,69, S347-S353.
[25] L.D. Wang, H.S. Kwok. Pulsed laser deposition of organic thin flms [J]. Thin Solid Films,2000,363,58-60.
[26] J. Schubert, M. Siegert, M. Fardmanesh, W. Zander, M. Proèmpers, Ch. Buchal, Judit Lisoni, C.H. Lei.Superconducting and electro-optical thin flms prepared by pulsed laser deposition technique [J]. AppliedSurface Science,2000,168,208-214.
[27] He J, Jiang JC, Liu J, Collins G, Chen CL, Lin B, Giurgiutiu V, Guo RY, Bhalla A, Meletis EI.Ferroelectric BaTiO3thin films on Ti substrate fabricated using pulsed-laser deposition [J]. J NanosciNanotechnol.,2010,10,45-50.
[28] V. Craciun, J. Elders, J. G. E. Gardeniers, Ian W. Boyd. Characteristics of high quality ZnO thin flmsdeposited by pulsed laser deposition [J]. Appl. Phys. Lett.,1994,65,2963-2965.
[29] Yolanda Y. Villanueva, Da-Ren Liu, Pei Tzu Cheng. Pulsed laser deposition of zinc oxide [J]. Thin SolidFilms,2006,501,366-369.
[30] Lei Zhao, Jianshe Lian, Yuhua Liu, Qing Jiang. Structural and optical properties of ZnO thin flmsdeposited on quartz glass by pulsed laser deposition [J]. Applied Surface Science,2006,252,8451-8455.
[31] S. Karamat, R.S. Rawat, T.L. Tan, P. Lee, S.V. Springhama, E. Ghareshabani, R. Chen, H.D. Sun.Nitrogen doping in pulsed laser deposited ZnO thin flms using dense plasma focus [J]. Applied SurfaceScience,2011,257,1979-1985.
[32] Xue Wang, Yong Ding, Dajun Yuan, Jung-Il Hong, Yan Liu, C. P. Wong, Chenguo Hu, Zhong Lin Wang.Reshaping the Tips of ZnO Nanowires by Pulsed Laser Irradiation [J]. Nano Res.2012,5,412-420.
[33] Yong-hong Ni, Xian-wen Wei, Jian-ming Hong, Yin Ye. Hydrothermal preparation and optical propertiesof ZnO nanorods [J]. Materials Science and Engineering B,2005,121,42-47.
[34] J X Wang, X W Sun, Y Yang, H Huang, Y C Lee, O K Tan, L Vayssieres. Hydrothermally grown orientedZnO nanorod arrays for gas sensing applications [J]. Nanotechnology,2006,17,4995-4998.
[35] D. Polsongkram, P. Chamninok, S. Pukird, L. Chow, O. Lupan, G. Chai, H. Khallaf, S. Park, A. Schulte.Effect of synthesis conditions on the growth of ZnO nanorods via hydrothermal method [J]. Physica B,2008,403,3713-3717.
[36] J P Liu, C X Xu, G P Zhu, X Li, Y P Cui, Y Yang, X W Sun. Hydrothermally grown ZnO nanorods onself-source substrate and their feld emission [J]. J. Phys. D:Appl. Phys.,2007,40,1906-1909.
[37] Xiaoyong Xu, Chunxiang Xu, Yi Lin, Tao Ding, Shengjiang Fang, Zengliang Shi, Weiwei Xia, JingguoHu. Surface photoluminescence and magnetism in hydrothermally grown undoped ZnO nanorod arrays[J]. Appl. Phys. Lett.,2012,100,172401(1-5).
[38]张跃.一维氧化锌纳米材料[M].北京：科学出版社，2010，105-110.
[39] Ye Sun, D. Jason Riley, Michael N. R. Ashfold. Mechanism of ZnO Nanotube Growth by HydrothermalMethods on ZnO Film-Coated Si Substrates [J]. J. Phys. Chem. B,2006,110,15186-15192.
[40]马自侠，李清山，张立春，赵风周，袁润，两步法生长ZnO纳米棒的结构及发光特性[J].光电子·激光,2012,5,819-823.
[41]郭素枝.扫描电镜技术及其应用[M].厦门：厦门大学出版社，2006，30-35.
[42]An Introduction to Electron Microscopy. Available: http://www.fei.com.
[43]Atomic Force Microscope (AFM). Available: http://pharm.virginia.edu/AFM.html.
[44] Kung H P，Alexander LE. X-ray diffraetion Proeedures for Polyerystalline and amorphous materials [M].NeWYork: Wiley.1974，
[45]固体发光[M].中国科学院与中国科技大学合编，1976，160-180.
[46]徐叙瑢，苏勉曾.发光学与发光材料[M].北京：化学工业出版社，2004，1-10.
[47]Adrian Kitai. Luminescent Materials andApplications [M]. John Wiley&Sons,2008.
[48] G.Blasse, B.C.Grabmaier. Luminescence Materials [M]. Springer-Verlag,1994.
[1] Hang Ju Ko, Yefan Chen, Soon Ku Hong, Takafumi Yao. MBE growth of high-quality ZnO flms onepi-GaN [J]. Journal of Crystal Growth,2000,209,816-821.
[2] Yinzhen Wang, Shunquan Wang, Shengming Zhou, Jun Xu, Jiandong Ye, Shulin Gu, Rong Zhang, QiushiRen. Effects of sapphire substrate annealing on ZnO epitaxial flms grown by MOCVD [J]. AppliedSurface Science,2006,253,1745-1747.
[3] Parag Banerjee, Won-Jae Lee, Ki-Ryeol Bae, Sang Bok Lee, Gary W. Rubloff. Structural, electrical, andoptical properties of atomic layer deposition Al-doped ZnO flms [J]. J. Appl. Phys.,2010,108,043504(1-7).
[4] Lei Zhao, Jianshe Lian, Yuhua Liu, Qing Jiang. Structural and optical properties of ZnO thin flmsdeposited on quartz glass by pulsed laser deposition [J]. Applied Surface Science,2006,252,8451-8455.
[5] Kwang Sik Kim, Hyoun Woo Kim, Nam Ho Kim. Structural characterization of ZnO flms grown on SiO2by the RF magnetron sputtering [J]. Physica B,2003,334,343-346.
[6] A. Kuroyanagi. Properties of aluminum-doped ZnO thin flms grown by electron beam evaporation [J]. Jpn.J.Appl. Phys.,1989,28,219-222.
[7] N. Gopalakrishnan, B.C. Shina, H.S. Lim, G.Y. Kim, Y.S. Yu. Comparison of ZnO:GaN films on Si(111)and Si(100) substrates by pulsed laser deposition[J]. Physica B,2006,376-377,756-759.
[8] X.M. Fan, J.S. Lian, Z.X. Guo, H.J. Lu. Microstructure and photoluminescence properties of ZnO thinfilms grown by PLD on Si(111) substrates. Applied Surface Science,2005,239,176-181.
[9] Venkatachalam S, Iida Y, Kanno Yoshinori, Preparation and characterization of Al doped ZnO thin filmsby PLD [J]. Superlattices and Microstructures,2008,44,127-135.
[10] WEI Xian-qi, ZHANG Ming-yang, MAN Bao-yuan, Study of annealing property and blue-emissionmechanism of ZnO thin films deposited by PLD [J], Journal of Optoelectronics.Laser,2009,20,897-900(in Chinese).
[11] M. Liu, X.Q. Wei, Z.G. Zhang, G. Sun, C.S. Chen, C.S. Xue, H.Z. Zhuang, B.Y. Man. Effect oftemperature on pulsed laser deposition of ZnO films [J].Applied Surface Science,2006,252,4321-4326.
[12] X.L. Xu, S.P. Lau, J.S. Chen, Z. Sun, B.K. Tay, J.W. Chai. Dependence of electrical and optical propertiesof ZnO flms on substrate temperature [J]. Materials Science in Semiconductor Processing,2001,4,617-620.
[13] Kwang-Sik Kim, Hyoun Woo Kim, Chong Mu Lee. Effect of growth temperature on ZnO thin flmdeposited on SiO2substrate [J]. Materials Science and Engineering B,2003,98,135-139.
[14] J.F. Chang, M.H. Hon. The effect of deposition temperature on the properties of Al-doped zinc oxide thinflms [J]. Thin Solid Films,2001,386,79-86.
[15] Sukhvinder Singh, R.S. Srinivasa, S.S. Major. Effect of substrate temperature on the structure and opticalproperties of ZnO thin films deposited by reactive rf magnetron sputtering [J]. Thin Solid Films,2007,515,8718-8722.
[16] LI Shao-lan, Zhang Li-chun, Zhang Zhong-jun, Huang Rui-zhi. Structural and PhotoluminescenceProperties of ZnO Films Grown on Al2O3(0001) by Pulsed Laser Deposition Technique [J]. Infrared,2012,33,12-16(in Chinese).
[17] Haibo Zeng, Guotao Duan, Yue Li, Shikuan Yang, Xiaoxia Xu, Weiping Cai, Blue Luminescence of ZnONanoparticles Based on Non-Equilibrium Processes: Defect Origins and Emission Controls [J]. Adv.Funct. Mater.,2010,20,561-572.
[18] Yinyan Gong, Tamar Andelman, Gertrude F Neumark, Stephen O’Brien, Igor L Kuskovsky, Origin ofdefect-related green emission from ZnO nanoparticles: effect of surface modification [J]. Nanoscale Res.Lett.,2007,2,297-302.
[19] Wang Zhaoyang, Hu Lizhong. Effect of oxygen pressure on the structural and optical properties of ZnOthin flms on Si (111) by PLD [J]. Vacuum,2009,83,906-909.
[20] Jae Hyung Jo, Tae-Bong Hur, Jin Sung Kwak, Dae Young Kwon, Yoon-Hwae Hwang, Hyung Kook Kim.Efects of Oxygen Pressure on the Crystalline of ZnO Films Grown on Sapphire by PLD Method [J].Journal of the Korean Physical Society,2005,47, S300-S303.
[21] Bai Lin Zhu, Xing Zhong Zhao, Sheng Xu, Fu Hai Su, Guo Hua Li, Xiao Guang Wu, Jun Wu, Run Wu,Jing Liu. Oxygen Pressure Dependences of Structure and Properties of ZnO Films Deposited onAmorphous Glass Substrates by Pulsed Laser Deposition [J]. Jpn. J. Appl. Phys.,2008,47,2225-2229.
[22] S. Choopun, R. D. Vispute, W. Noch, A. Balsamo, R. P. Sharma, T. Venkatesan, A. Iliadis, D. C. Look.Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire [J].Appl. Phys. Lett.,1999,75,3947(1-3).
[23] Ruijin Hong, Hongji Qi, Jianbing Huang, Hongbo He, Zhengxiu Fan, Jianda Shao. Influence of oxygenpartial pressure on the structure and photoluminescence of direct current reactive magnetron sputteringZnO thin films [J]. Thin Solid Films,2005,473,58-62.
[24] Sang Sub Kim, Byung-Teak Lee. Effects of oxygen pressure on the growth of pulsed laser deposited ZnOfilms on Si (001)[J]. Thin Solid Films,2004,446,307-312.
[25] Jianguo Lv, Wanbing Gong, Kai Huang, Jianbo Zhu, Fanming Meng, Xueping Song, Zhaoqi Sun. Effectof annealing temperature on photocatalytic activity of ZnO thin flms prepared by sol–gel method [J].Superlattices and Microstructures,2011,50,98-106.
[26] Z.B. Fang, Z.J. Yan, Y.S. Tan, X.Q. Liu, Y.Y. Wang. Infuence of post-annealing treatment on the structureproperties of ZnO flms [J].Applied Surface Science,2005,241,303-308.
[27] Z Z Zhi, Y C Liu, B S Li, X T Zhang, Y M Lu, D Z Shen, X W Fan. Effects of thermal annealing on ZnOfilms grown by plasma enhanced chemical vapour deposition from Zn(C2H5)2and CO2gas mixtures [J]. J.Phys. D:Appl. Phys.,2003,36,719-722.
[28] Shoubin Xue, Huizhao Zhuang, Chengshan Xue, Shuyun Teng, Lijun Hu. Effect of annealing temperatureon properties of ZnO thin films on Si (111) substrates by magnetron sputtering [J]. The European PhysicalJournal Applied Physics,2006,36,1-4.
[29] A.B. Djurisic, A.M.C. Ng, X.Y. Chen. ZnO nanostructures for optoelectronics: Material properties anddevice applications [J]. Progress in Quantum Electronics,2010,34,191-259.
[30] Zhong Lin Wang. Zinc oxide nanostructures: growth, properties and applications [J]. J. Phys.: Condens.Matter,2004,16, R829-R858.
[31] Gyu-Chul Yi, Chunrui Wang and Won II Park. ZnO nanorods: synthesis, characterization and applications[J]. Semicond. Sci. Technol.,2005,20, S22-S34.
[32] J X Wang, X W Sun, Y Yang, H Huang, Y C Lee, O K Tan, L Vayssieres. Hydrothermally grown orientedZnO nanorod arrays for gas sensing applications [J]. Nanotechnology,2006,17,4995-4998.
[33] M.W. Zhu, N. Huang, J. Gong, B. Zhang, Z.J. Wang, C. Sun· X. Jiang. Growth of ZnO nanorod arrays bysol–gel method: transition from two-dimensional flm to one-dimensional nanostructure [J]. Appl Phys A,2011,103,159-166.
[34] Xiang Liu, Xiaohua Wu, Hui Cao, R. P. H. Chang. Growth mechanism and properties of ZnO nanorodssynthesized by plasma-enhanced chemical vapor deposition [J]. J.Appl. Phys.,2004,95,3141-3147.
[35] Chun Li, Guojia Fang, Jun Li, Lei Ai, Binzhong Dong, Xingzhong Zhao. Effect of Seed Layer onStructural Properties of ZnO Nanorod Arrays Grown by Vapor-Phase Transport [J]. J. Phys. Chem.C,2008,112,990-995.
[36] Yinglei Tao, Ming Fu, Ailun Zhao, Dawei He, Yongsheng Wang. The effect of seed layer on morphologyof ZnO nanorod arrays grown by hydrothermal method [J]. Journal of Alloys and Compounds,2010,489,99-102.
[1] ü. zgür, Ya. I. Alivov, C. Liu, A. Teke，M. A. Reshchikov, S. Do an, V. Avrutin, S.-J. Cho, H. Morko. Acomprehensive review of ZnO materials and devices [J]. J. Appl. Phys.,2005,98,041301(1-103).
[2] Oleg Maksimov. Recent advances and novel approaches of p-type doping of zinc oxide [J]. Rev. Adv.Mater. Sci.,2010,24,26-34.
[3] S.P. Chang, R.W. Chuang, S.J. Chang, Y.Z. Chiou, C.Y. Lu. MBE n-ZnO/MOCVD p-GaN heterojunctionlight-emitting diode [J]. Thin Solid Films,2009,517,5054-5056.
[4] T. Wang, H. Wu, C. Chen, C. Liu. Growth, optical, and electrical properties of nonpolar m-plane ZnO onp-Si substrates withAl2O3buffer layers [J].Applied Physics Letters,2012,100,011901(1-3).
[5] Y.T. Shih, M.K. Wu, M.J. Chen, Y.C. Cheng, J.R. Yang, M. Shiojiri. ZnO-based heterojunctionlight-emitting diodes on p-SiC(4H) grown by atomic layer deposition [J]. Appl Phys B,2010,98,767-772.
[6] J. R. Sadaf, M. Q. Israr, S. Kishwar, O. Nur, M. Willander. White electroluminescence using ZnOnanotubes/GaN heterostructure light-emitting diode [J]. Nanoscale Res. Lett.,2010,5,957-960
[7] J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A.M. Wowchak, A. M. Dabiran, P. P. Chow. Improved electroluminescence from n-ZnO/AlN/p-GaNheterojunction light-emitting diodes [J]. Applied Physics Letters,2010,96,201102(1-3).
[8] Yungting Chen, Hanyu Shih, Chunhsiung Wang, Chunyi Hsieh, Chihwei Chen, Yangfang Chen, TaiyuanLin.Ultraviolet electroluminescence from hybrid inorganic/organic ZnO/GaN/poly (3-hexylthiophene)dual heterojunctions [J]. Optics express,2011,19, A319-A325.
[9] Shrawan Jha, Jin-Cheng Qian, Oleksandr Kutsay, Jaroslav Kovac Jr, Chun-Yan Luan, Juan Antonio Zapien,Wenjun Zhang, Shuit-Tong Lee, Igor Bello. Violet-blue LEDs based on p-GaN/n-ZnO nanorods and theirstability [J]. Nanotechnology,2011,22,245202(1-8).
[10] R. D. Vispute, V. Talyansky, S. Choopun, R. P. Sharma, T. Venkatesan, M. He, X. Tang, J. B. Halpern,M. G. Spenser, Y. X. Li, L. G. Salamansa Riba, A. A. Illadis, K. A. Jones. Heteroepitaxy of ZnO on GaNand its implications for fabrication of hybrid optoelectronic devices [J]. Appl. Phys. Lett.,1998,73,348-350.
[11] Ya. I. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, B. M. Ataev. Observation of430nmelectroluminescence from ZnO/GaN heterojunction light-emitting diodes [J]. Appl. Phys. Lett.,2003,83,2943-2945.
[12] H. Amano, M. Kito, K. Hiramatsu, I. Akasaki. P-Type Conduction in Mg-Doped GaN Treated withLow-Energy Electron Beam Irradiation (LEEBI)[J]. Jpn. J. Appl. Phys.,1989,28, L2112-L2114.
[13] S. Nakamura, T. Mukai, M. Senoh, N. Iwasa. Hole Compensation Mechanism of P-Type GaN Films [J].Jpn. J. Appl. Phys.31,1992,1258-1266.
[14] T.S. Jeong, C.J. Youn, M.S. Han, J.W. Yang, K.Y. Lim. Analysis of Mg-relatedemissions in p-GaNgrown by MOCVD [J]. Journal of Crystal Growth,2003,259,267-272.
[15] S.J. Chung, E.-K. Suh, H.J. Lee, H.B. Mao, S.J. Park. Photoluminescence and photocurrent studies ofp-type GaN with various thermal treatments [J]. Journal of Crystal Growth,2002,235,49-54.
[16] SUI Yan-Ping, YU Guang-Hui. Efect of Mg Doping on the Photoluminescence of GaN:Mg Films byRadio-Frequency Plasma-Assisted Molecular Beam Epitaxy [J]. CHIN. PHYS. LETT.,2011,28,067807(1-4).
[17] Ho Won Jang, Jong-Lam Lee. Mechanism for ohmic contact formation of Ni/Ag contacts on p-type GaN[J]. Applied Physics Letters,2004,85(24):5920-5922.
[18] Chi-Sen Lee, Yow-Jon Lin, Ching-Ting Lee. Investigation of oxidation mechanism for ohmic formationin Ni/Au contacts to p-type GaN layers [J]. Applied Physics Letters,2001,79(23),3815-3817.
[19] Ray-Hua Horng, Dong-Sing Wuu, Yi-Chung Lien, et al. Low-resistance and high-transparency Ni/indiumtin oxide ohmic contacts to p-type GaN [J]. Applied Physics Letters,2001,79(18),2925-2927.
[20] June-O Song, Dong-Seok Leem, Tae-Yeon Seong. Formation of low resistance and transparent ohmiccontacts to p-type GaN using Ni-Mg solid solution [J]. Applied Physics Letters,2003,83,3513-3515.
[21] R. L. Anderson. Germanium-gallium arsenide heterojunction [J]. IBM J. Res. Dev.,1960,4,283-287.
[22]虞丽生.半导体异质结物理[M].北京：科学出版社，2006.182-183.
[23] Bo Hyun Kong, Won Suk Han, Young Yi Kim, Hyung Koun Cho, Jae Hyun Kim. Heterojunction lightemitting diodes fabricated with different n-layer oxide structures on p-GaN layers by magnetronsputtering [J]. Applied Surface Science,2010,256,4972-4976.
[24] Sheng Xu, Chen Xu, Ying Liu, Youfan Hu, Rusen Yang, Qing Yang, Jae-Hyun Ryou, Hee Jin Kim,Zachary Lochner, Suk Choi, Russell Dupuis, Zhong Lin Wang. Ordered Nanowire Array Blue/Near-UVLight Emitting Diodes [J]. Adv. Mater.,2010,22,4749-4753.
[25] T.P. Yang, H.C. Zhu, J.M. Bian, J.C. Sun, X. Dong, B.L. Zhang, H.W. Liang, X.P. Li, Y.G. Cui, G.T. Du.Room temperature electroluminescence from the n-ZnO/p-GaN heterojunction device grown by MOCVD[J]. Materials Research Bulletin,2008,43,3614-3620.
[26] S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, Z. G. Wang, S. Qu, B. Cui, A. M.Wowchak, A. M. Dabiran, P. P. Chow. Improvement of electroluminescent performance ofn-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer [J]. J. Appl. Phys.,2011,109,093708(1-6).
[27] Huihui Huang, Guojia Fang, Yuan Li, Songzhan Li, Xiaoming Mo, Hao Long, Haoning Wang, David L.Carroll, Xingzhong Zhao. Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaNheterojunction light emitting diodes [J]. Appl. Phys. Lett.,2012,100,233502(1-4).
[28] Sejoon Lee, Deuk Young Kim. Characteristics of ZnO/GaN heterostructure formed on GaN substrate bysputtering deposition of ZnO [J]. Materials Science and Engineering B,2007,137,8084.
[29] Seung-Ho Hwang, Tae-Hoon Chung and Byung-Teak Lee. Study on the interfacial layer in ZnO/GaNheterostructure light-emitting diode [J]. Materials Science and Engineering B,2009,157,32-35.
[30] H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M.Lu, Z. K. Tang. Ultralow-Threshold Laser Realized in Zinc Oxide [J]. Adv. Mater.,2009,21,1613-1617.
[31] J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui,A. M. Wowchak, A. M. Dabiran, P. P. Chow. Improved electroluminescence from n-ZnO/AlN/p-GaNheterojunction light-emitting diodes [J]. Appl. Phys. Lett.,2010,96,201102(1-3).
[32] H.Y. XU, Y.C. LIU, Y.X. LIU, C.S. XU, C.L. SHAO, R. MU, Ultraviolet electroluminescence fromp-GaN/i-ZnO/n-ZnO heterojunction light-emitting diodes [J]. Appl. Phys. B,2005,80,871-874.
[33] Won Suk Han, Young Yi Kim, Bo Hyun Kong, Hyung Koun Cho, Ultraviolet light emitting diode withn-ZnO:Ga/i-ZnO/p-GaN:Mg heterojunction [J]. Thin Solid Films,2009,517,5106-5109.
[34] Sheng Xu, Chen Xu, Ying Liu, Youfan Hu, Rusen Yang, Qing Yang, Jae-Hyun Ryou, Hee Jin Kim,Zachary Lochner, Suk Choi, Russell Dupuis, Zhong Lin Wang. Ordered Nanowire Array Blue/Near-UVLight Emitting Diodes [J]. Advanced Materials,2010,22,4749-4753.
[35] N H Alvi, Kamran ul Hasan, Omer Nur, Magnus Willander. The origin of the red emission in n-ZnOnanotubes/p-GaN white light emitting diodes [J]. Nanoscale Research Letters,2011,6,130(1-7).
[1] Ya. I. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, B. M. Ataev. Observation of430nmelectroluminescence from ZnO/GaN heterojunction light-emitting diodes [J]. Appl. Phys. Lett.,2003,83,2943-2945.
[2] H.Y. XU, Y.C. LIU, Y.X. LIU, C.S. XU, C.L. SHAO, R. MU, Ultraviolet electroluminescence fromp-GaN/i-ZnO/n-ZnO heterojunction light-emitting diodes [J]. Appl. Phys. B,2005,80,871-874.
[3] J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A.M. Wowchak, A. M. Dabiran, P. P. Chow. Improved electroluminescence from n-ZnO/AlN/p-GaNheterojunction light-emitting diodes [J]. Appl. Phys. Lett.,2010,96,201102(1-3).
[4] H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M.Lu, Z. K. Tang. Ultralow-Threshold Laser Realized in Zinc Oxide [J]. Adv. Mater.,2009,211613-1617.
[5] Huihui Huang, Guojia Fang, Yuan Li, Songzhan Li, Xiaoming Mo, Hao Long, Haoning Wang, David L.Carroll, Xingzhong Zhao. Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaNheterojunction light emitting diodes [J]. Appl. Phys. Lett.,2012,100,233502(1-4).
[6] Tzu-Chun Lu, Min-Yung Ke, Sheng-Chieh Yang, Yun-Wei Cheng, Liang-Yi Chen, Guan-Jhong Lin,Yu-Hsin Lu, Jr-Hau He, Hao-Chung Kuo, JianJang Huang. Characterizations of low-temperatureelectroluminescence from ZnO nanowire light-emitting arrays on the p-GaN layer [J]. OPTICS LETTERS,2010,35,4109-4111.
[7] Songzhan Li, Guojia Fang, Hao Long, Xiaoming Mo, Huihui Huang, Binzhong Dong, Xingzhong Zhao.Enhancement of ultraviolet electroluminescence based on n-ZnO/n-GaN isotype heterojunction with lowthreshold voltage [J]. Appl. Phys. Lett.,2010,96,201111(1-3).
[8] W. Z. Liu, H. Y. Xu, L. X. Zhang, C. Zhang, J. G. Ma, J. N. Wang, Y. C. Liu. Localized surfaceplasmon-enhanced ultraviolet electroluminescence from n-ZnO/i-ZnO/p-GaN heterojunction lightemitting diodes via optimizing the thickness of MgO spacer layer [J]. Appl. Phys. Lett.,2012,101,142101(1-5).
[9] S. Nakamura, T. Mukai, M. Senon. High-Power GaN P-N Junction Blue-Light-Emitting Diodes [J]. Jpn. J.Appl. Phys.,1991,30, L1998-L2001.
[10] M. Asif Khan, Qchen, R.A. Skogman, J.N. Kuznia. Violet-blue GaN homojunction light emitting diodeswith rapid thermal annealed p-type layers [J]. Appl. Phys. Lett.,1995,66,2046-2048.
[11] Haibo Zeng, Guotao Duan, Yue Li, Shikuan Yang, Xiaoxia Xu, Weiping Cai, Blue Luminescence of ZnONanoparticles Based on Non-Equilibrium Processes: Defect Origins and Emission Controls [J]. Adv.Funct. Mater.,2010,20,561-572.
[12] Yinyan Gong, Tamar Andelman, Gertrude F Neumark, Stephen O’Brien, Igor L Kuskovsky, Origin ofdefect-related green emission from ZnO nanoparticles: effect of surface modification [J]. Nanoscale Res.Lett.,2007,2,297-302.
[13] Lichun Zhang, Qingshan Li, Liang Shang, Zhongjun Zhang, Ruizhi Huang, Fengzhou Zhao.Electroluminescence from n-ZnO:Ga/p-GaN heterojunction light-emitting diodes with different interfaciallayers [J]. J. Phys. D: Appl. Phys.,2012,45,485103(1-6).
[14] Songzhan Li, Guojia Fan, Hao Long, Haoning Wang, Huihui Huang, Xiaoming Mo, Xingzhong Zhao.Low-threshold pure UV electroluminescence from n-ZnO:Al/i-layer/n-GaN heterojunction [J]. Journal ofLuminescence,2012,132,1642-1645.
[15] Y W Zhang, X M Li, W D Yu, X D Gao, Y F Gu, C Yang, J L Zhao, X W Sun, S T Tan, J F Kong, W ZShen. Epitaxial growth and luminescence properties of ZnO-based heterojunction light-emitting diode onSi (111) substrate by pulsed-laser deposition [J]. J. Phys. D: Appl. Phys.,2008,41,205105(1-6).
[16] S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, Z. G. Wang, S. Qu, B. Cui, A. M.Wowchak, A. M. Dabiran, P. P. Chow. Improvement of electroluminescent performance ofn-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer [J]. J. Appl. Phys.,2011,109,093708(1-6).
[17] Xiaosheng Fang, Tianyou Zhai, Ujjal K. Gautam, Liang Li, Limin Wu, Yoshio Bando, Dmitri Golberg.ZnS nanostructures: From synthesis to applications [J]. Progress in Materials Science,2011,56,175-287.
[18] K. M. Yeung, W. S. Tsang, C. L. Mak, K. H. Wong. Optical studies of ZnS: Mn films grown by pulsedlaser deposition [J]. J. Appl. Phys.,2002,92,3636-3640.
[19] Jian Huang, Linjun Wang, Ke Tang, Jijun Zhang, Weimin Shi, Yiben Xia, Xionggang Lu. Growth of ZnSfilms and application in heterojunction [J]. Advanced Materials Research,2011,287-290,2140-2143.
[20] M. McLaughlin, H. F. Sakeek, P. Maguire, W. G. Graham, J. Molloy. Properties of ZnS thin filmsprepared by248nm pulsed laser deposition [J]. Appl. Phys. Lett.,1993,63,1865-1867.
[21] Dong Hyun Hwang, Jung Hoon Ahn, Kwun Nam Hui, Kwan San Hui, Young Guk Son. Structural andoptical properties of ZnS thin films deposited by RF magnetron sputtering [J]. Nanoscale Research Letters,2012,7,26(1-7).
[22] Xiaosheng Fang, Yoshio Bando, Ujjal K. Gautam, Tianyou Zhai, Haibo Zeng, Xijin Xu, Meiyong Liao,Dmitri Golberg. ZnO and ZnS Nanostructures: Ultraviolet-Light Emitters, Lasers, and Sensors [J]. CriticalReviews in Solid State and Materials Sciences,2009,34,190-23.
[23] Ming-Yen Lu, Jinhui Song, Ming-Pei Lu, Chung-Yang Lee, Lih-Juann Chen, Zhong Lin Wang. ZnO-ZnSHeterojunction and ZnS Nanowire Arrays for Electricity Generation [J]. ACS Nano.,2009,3,357-362.
[24] Xia Fan, Ming-Liang Zhang, Ismathullakhan Shafq, Wen-Jun Zhang, Chun-Sing Lee, Shuit-Tong Lee.ZnS/ZnO Heterojunction Nanoribbons [J]. Adv. Mater.,2009,21,2393-2396.
[25] G. Y. Zhu, C. X. Xu, Y. Lin, Z. L. Shi, J. T. Li, T. Ding, Z. S. Tian, G. F. Chen. Ultravioletelectroluminescence from horizontal ZnO microrods/GaN heterojunction light-emitting diode array [J].Appl. Phys. Lett.,2012,101,041110(1-4).
[26] Sheng Xu, Chen Xu, Ying Liu, Youfan Hu, Rusen Yang, Qing Yang, Jae-Hyun Ryou, Hee Jin Kim,Zachary Lochner, Suk Choi, Russell Dupuis, Zhong Lin Wang. Ordered Nanowire Array Blue/Near-UVLight Emitting Diodes [J]. Adv. Mater.,2010,22,4749-4753.
[27] Huihui Huang, Guojia Fang, Songzhan Li, Hao Long, Xiaoming Mo, Haoning Wang, Yuan Li, Qike Jiang,David L. Carroll, Jianbo Wang, Mingjun Wang, Xingzhong Zhao. Ultraviolet/orange bicolorelectroluminescence from an n-ZnO/n-GaN isotype heterojunction light emitting diode [J]. Appl. Phys.Lett.,2011,99,263502(1-4).
[28] Ju Young Lee, Jong Hoon Lee, Hong Seung Kim, Chung-Hyun Lee, Hyung-Soo Ahn, Hyung Koun Cho,Young Yi Kim, Bo Hyun Kong, Ho Seong Lee. A study on the origin of emission of the annealedn-ZnO/p-GaN heterostructure LED [J]. Thin Solid Films,2009,517,5157-5160.
[29] Seung-Ho Hwang, Tae-Hoon Chung and Byung-Teak Lee. Study on the interfacial layer in ZnO/GaNheterostructure light-emitting diode [J]. Materials Science and Engineering B,2009,157,32-35.
[30] Sejoon Lee, Deuk Young Kim. Characteristics of ZnO/GaN heterostructure formed on GaN substrate bysputtering deposition of ZnO [J]. Materials Science and Engineering B,2007,137,80-84.
[31] H. Y. Yang, S. F. Yu, H. K. Liang, S. P. Lau, S. S. Pramana, C. Ferraris, C. W. Cheng and H. J. Fan.Ultraviolet Electroluminescence from Randomly Assembled n-SnO2Nanowires/p-GaN:MgHeterojunction [J]. ACS Applied Materials and Interfaces,2010,2,1191-1194.
[32] Shizuo, Fujita. Ultraviolet optical functions of ZnO and Ga2O3thin films [J]. Proceedings of the SPIE,2008,7041,70410M-14.
[33] S. Gowtham, Mrinalini Deshpande, Aurora Costales, Ravindra Pandey. Structural, Energetic, Electronic,Bonding, and Vibrational Properties of Ga3O, Ga3O2, Ga3O3, Ga2O3, and GaO3Clusters [J]. J. Phys. Chem.B,2005,109,14836-14844.
[34] A. Janotti, C. G. Van de Walle. Native point defects in ZnO [J]. Phys. Rev. B,2007,76,165202-165223.
[35] Won Suk Han, Young Yi Kim, Bo Hyun Kong, Hyung Koun Cho, Ultraviolet light emitting diode withn-ZnO:Ga/i-ZnO/p-GaN:Mg heterojunction [J]. Thin Solid Films,2009,517,5106-5109.
[36] Y.T. Shih, M.K. Wu, M.J. Chen, Y.C. Cheng, J.R. Yang, M. Shiojiri. ZnO-based heterojunctionlight-emitting diodes on p-SiC(4H) grown by atomic layer deposition [J]. Appl Phys B,2010,98,767-772.
[1]张跃.一维氧化锌纳米材料[M].北京:科学出版社，2010，1-5.
[2] C. J. Lee, T. J. Lee, S. C. Lyu, Y. Zhang, H. Ruh, H. J. Lee. Field emission from well-aligned zinc oxidenanowires grown at low temperature [J]. Appl. Phys. Lett.,2002,81,3648-3650.
[3] Q. Wan, Q. H. Li, Y. J. Chen, T. H. Wang, X. L. He, J. P. Li, C. L. Lin. Fabrication and ethanol sensingcharacteristics of ZnO nanowire gas sensors [J]. Appl. Phys. Lett.,2004,84,3654-3656.
[4] Yun-Ju Lee, Douglas S. Ruby, David W. Peters. ZnO Nanostructures as Efficient Antireflection Layers inSolar Cells [J]. Nanoletters,2008,8(5),1501-1505.
[5] Y. Li, G. W. Meng, L. D. Zhang, et al. Ordered semiconductor ZnO nanowire arrays and theirphotoluminescence properties [J]. Appl. Phys. Lett.,2000,76(15),2011-2013.
[6] William L. Hughes, Zhong L. Wang. Controlled synthesis and manipulation of ZnO nanorings andnanobows [J]. Appl. Phys. Lett.,2005,86(4),043106-043109.
[7] J X Wang, X W Sun, Y Yang, H Huang, Y C Lee, O K Tan, L Vayssieres. Hydrothermally grown orientedZnO nanorod arrays for gas sensing applications [J]. Nanotechnology,2006,17,4995-4998.
[8] Y. J. Xing, Z. H. Xi, Z. Q. Xue, et al. Optical properties of the ZnO nanotubes synthesized via vapor phasegrowth [J]. Appl. Phys. Lett.,2003,83(9),1689-1691.
[9] Chang Shi Lao, Jin Liu, Puxian Gao, et al. ZnO Nanobelt/Nanowire Schottky Diodes Formed byDielectrophoresis Alignment across Au Electrodes [J]. Nano Lett.,2006,6(2),263-266.
[10] Chun-Yi Wu, Hsu-Cheng Hsu, Hsin-Min Cheng, et al. Structural and optical properties of ZnO nanosaws[J]. Journal of Crystal Growth,2006,287(1),189-193.
[11] Zhengmao Yin, Xiaoyan Liu, Yongzhong Wu, Xiaopeng Hao, Xiangang Xu. Enhancement of lightextraction in GaN-based light-emitting diodes using rough beveled ZnO nanocone arrays [J]. OPTICSEXPRESS,2012,20,1013-1021.
[12] Kyoung-Kook Kim, Sam-dong Lee, Hyunsoo Kim,1Jae-Chul Park, Sung-Nam Lee, Youngsoo Park,Seong-Ju Park, Sang-Woo Kim. Enhanced light extraction effciency of GaN-based light-emitting diodeswith ZnO nanorod arrays grown using aqueous solution [J]. Appl. Phys. Lett.,2009,94,071118(1-3).
[13] Sung Jin An, Jee Hae Chae, Gyu-Chul Yi, Gil H. Park. Enhanced light output of GaN-basedlight-emitting diodes with ZnO nanorod arrays [J]. Appl. Phys. Lett.,2008,92,121108(1-3).
[14] Lichun Zhang, Qingshan Li, Yanfeng Dong, Ruizhi Huang,Zhongjun Zhang, Fengzhou Zhao.Electroluminescence from ZnO nanorod/unetched GaN LED wafers under forward and reverse biases [J].J. Opt.,2012,14125601(1-6).
[15] Sung Jin An. Transparent conducting ZnO nanorods for nanoelectrodes as a reverse tunnel junction ofGaN light emitting diode applications [J]. Appl. Phys. Lett.,2012,100,223115(1-5).
[16] M Willander, O Nur, Q X Zhao, et al. Zinc oxide nanorod based photonic devices: recent progress ingrowth, light emitting diodes and lasers [J]. Nanotechnology,2009,20,332001(1-40).
[17] W.I. Park, G.-C. Yi. Electroluminescence in n-ZnO nanorod arrays vertically grown on p-GaN [J].Advanced Materials,2004,16,87-90.
[18] Fang Fang, Dongxu Zhao, Binghui Li, Zhenzhong Zhang, Dezhen Shen. Hydrogen effects on theelectroluminescence of n-ZnO nanorod/p-GaN film heterojunction light-emitting diodes [J]. Phys. Chem.Chem. Phys.,2010,12(25),6759-6762.
[19] Sam-Dong Lee, Yoon-Seok Kim, Min-Su Yi, Jae-Young Choi, Sang-Woo Kim. Morphology Control andElectroluminescence of ZnO Nanorod/GaN Heterojunctions Prepared Using Aqueous Solution [J]. J. Phys.Chem. C,2009,113,8954–8958.
[20] S. JHA, C.D. WANG, C.Y. LUAN, C.P. LIU, H. BIN, O. KUTSAY, I. BELLO, J.A. ZAPIEN, W.J.ZHANG, S.T. LEE. Near-Ultraviolet Light-Emitting Devices Using Vertical ZnO Nanorod Arrays [J].Journal of electronic materials,2012,41(5),853-856.
[21] S. G. Zhang, X. W. Zhang, F. T. Si, J. J. Dong, J. X. Wang, X. Liu, Z. G. Yin, H. L. Gao. Ordered ZnOnanorods-based heterojunction light-emitting diodes with graphene current spreading layer [J]. Appl. Phys.Lett.,2012,101,121104(1-4).
[22] A.M.C. Ng, X.Y. Chen, F. Fang, Y.F. Hsu, A.B. Djuri i′c, C.C. Ling, H.L. Tam, K.W. Cheah, P.W.K.Fong, H.F. Lui, C. Surya, W.K. Chan. Solution-based growth of ZnO nanorods for light-emitting devices:hydrothermal vs. electrodeposition [J]. Appl Phys B,2010,100,851-858.
[23] Xinyi Chen, Alan Man Ching Ng, Fang Fang, Yip Hang Ng, Aleksandra B Djurisˇic′, Hoi Lam Tam, KokWai Cheah, Shangjr Gwo, Wai Kin Chan, Patrick Wai Keung Fong, Hsian Fei Lui, Charles Surya. ZnOnanorod/GaN light-emitting diodes: The origin of yellow and violet emission bands under reverse andforward bias [J]. J. Appl. Phys.,2011,110(9),094513(1-12).
[24] Shrawan Kumar Jha, Chunyan Luan, Chap Hang To, Oleksandr Kutsay, Jaroslav Kov ac, Jr., JuanAntonio Zapien, Igor Bello, Shuit-Tong Lee. ZnO-nanorod-array/p-GaN high-performance ultra-violetlight emitting devices prepared by simple solution synthesis [J]. Appl. Phys. Lett.,2012,101,211116(1-4).
[25] Shrawan Jha, Jin-Cheng Qian, Oleksandr Kutsay, Jaroslav Kovac Jr, Chun-Yan Luan, Juan AntonioZapien, Wenjun Zhang, Shuit-Tong Lee, Igor Bello. Violet-blue LEDs based on p-GaN/n-ZnO nanorodsand their stability [J]. Nanotechnology,2011,22(24),245202(1-8).
[26] A M C Ng, Y Y Xi, Y F Hsu, A B Djuriˇsi′c, W KChan, S Gwo, H L Tam, K W Cheah, P W K Fon, H FLui, C Surya. GaN/ZnO nanorod light emitting diodes with different emission spectra [J].Nanotechnology,2009,20(44),445201(1-8).
[27] J. J. Dong, X. W. Zhang, Z. G. Yin, J. X. Wang, S. G. Zhang, F. T. Si, H. L. Gao, X. Liu, Ultravioletelectroluminescence from ordered ZnO nanorod array/p-GaN light emitting diodes [J]. Applied PhysicsLetters,2012,100,171109(1-3).
[28] S.K. Jha, O. Kutsay, I. Bello n, S.T. Lee. ZnO nanorod based low turn-on voltage LEDs with wideelectroluminescence spectra [J]. Journal of Luminescence,2013,133,222-225.
[29] S. Kishwar, K. ul Hasan, N.H. Alvi, P. Klason, O. Nur, M. Willander. A comparative study of theelectrodeposition and the aqueous chemical growth techniques for the utilization of ZnO nanorods onp-GaN for white light emitting diodes [J]. Superlattices and Microstructures,2011,49,32-42.
[30] X. H. Wang, H. Q. Jia, L. W. Guo, Z. G. Xing, Y. Wang, X. J. Pei, J. M. Zhou, H. Chen. Whitelight-emitting diodes based on a single InGaN emission layer [J]. Appl. Phys. Lett.,2007,91,161912(1-3).
[31] S. Kishwar, K. ul Hasan, G. Tzamalis, O. Nur, M. Willander, H. S. Kwack, D. Le Si Dang. Electro-opticaland cathodoluminescence properties of low temperature grown ZnO nanorods/p-GaN white light emittingdiodes [J]. Phys. Status Solidi A,2009,207,1-6.
[32] J. R. Sadaf, M. Q. Israr, S. Kishwar, O. Nur, M. Willander. White Electroluminescence Using ZnONanotubes/GaN Heterostructure Light-Emitting Diode [J]. Nanoscale Res Lett.,2010,5,957-960.
[33] N.H. Alvi, S.M. Usman Ali, S. Hussain, O. Nur and M. Willander. Fabrication and comparative opticalcharacterization of n-ZnO nanostructures (nanowalls, nanorods, nanofowers and nanotubes)/p-GaNwhite-light-emitting diodes [J]. Scripta Materialia,2011,64,697-700.
[34] Seung-Ho Hwang, Tae-Hoon Chung and Byung-Teak Lee. Study on the interfacial layer in ZnO/GaNheterostructure light-emitting diode [J]. Materials Science and Engineering B,2009,157,32-35.
[35] Sejoon Lee, Deuk Young Kim. Characteristics of ZnO/GaN heterostructure formed on GaN substrate bysputtering deposition of ZnO [J]. Materials Science and Engineering B,2007,137,80-84.
[36]叶良修.半导体物理学[M].北京：高等教育出版社，2007,332-336.
[37] Grundmann M. The Physics of Semiconductors: An Introduction Including Devices and Nanophysics2ndedn [M]. Heidelberg: Springer,2010,760-762.
[38] Chen H C, Chen M J, Huang Y H, Sun W C, Li W C, Yang J R, Kuan H and Shiojiri M. White-lightelectroluminescence from n-ZnO/p-GaN heterojunction light-emitting diodes at reverse breakdown biasIEEE Trans. Electron Devices,2011,58,3970(1-5).
[39] Sadaf J R, Israr M Q, Kishwar S, Nur O, Willander M. Forward-and reverse-biased electroluminescencebehavior of chemically fabricated ZnO nanotubes/GaN interface Semicond. Sci. Technol.,2011,26,075003(1-6).
[40] G. Y. Zhu, C. X. Xu, Y. Lin, Z. L. Shi, J. T. Li, T. Ding, Z. S. Tian, G. F. Chen. Ultravioletelectroluminescence from horizontal ZnO microrods/GaN heterojunction light-emitting diode array [J].Appl. Phys. Lett.,2012,101,041110(1-4).
[41] Sheng Xu, Chen Xu, Ying Liu, Youfan Hu, Rusen Yang, Qing Yang, Jae-Hyun Ryou, Hee Jin Kim,Zachary Lochner, Suk Choi, Russell Dupuis, Zhong Lin Wang. Ordered Nanowire Array Blue/Near-UVLight Emitting Diodes [J]. Adv. Mater.,2010,22,4749-4753.
[42] A. Janotti, C. G. Van de Walle. Native point defects in ZnO [J]. Phys. Rev. B,2007,76,165202-165223.
[43] Zhen Guo, Hong Zhang, Dongxu Zhao, Yichun Liu, Bin Yao, Binghui Li, Zhenzhong Zhang, DezhenShen. The ultralow driven current ultraviolet-blue light-emitting diode based on n-ZnOnanowires/i-polymer/p-GaN heterojunction [J]. Appl. Phys. Lett.,2010,97,173508(1-3).
[44] N.H. Alvi, M. Willander, O. Nur. The effect of the post-growth annealing on the electroluminescenceproperties of n-ZnO nanorods/p-GaN light emitting diodes [J]. Superlattices and Microstructures,2010,47,754-761.
[2] Nakamura S, Fasol G. The Blue Laser Diode [M]. Berlin: Springer Press,1996,1-5.
[3] Takashi Miyoshi, Tomoya Yanamoto, Tokuya Kozaki, Shin-ichi Nagahama, Yukio Narukawa, MasahikoSano, Takao Yamada, Takashi Mukai. Recent status of white LEDs and nitride LDs [J]. Proc. of SPIE,2008,6894,689414(1-7).
[4] Light-emitting diode. Available: http://en.wikipedia.org/wiki/Led.
[5]叶良修.半导体物理学[M].北京：高等教育出版社，2007.582-583.
[6] Tsunemasa Taguchi. Recent progress and future prospect of high-performance near-UV based white LEDsfrom ECO lighting to medical application [J]. Proc. of SPIE,2009,7422,74220B (1-15).
[7] P. Zu, Z.K. Tang, G.K.L. Wong, M. Kawasaki, A. Ohtomo, H. Koinuma, Y. Segawa. Ultravioletspontaneous and stimulated emissions from ZnO microcrystallite thin films at room temperature [J]. SolidState Commun,1997,103(8),459-463.
[8] Service R F. Will UV lasers beat the blues [J]. Science,1997,276(5314),895.
[9] Z. K. Tang, G. K. L. Wong, P. Yu, M. Kawasaki, A. Ohtomo, H. Koinuma, Y. Segawa. Room-temperatureultraviolet laser emission from self-assembled ZnO microcrystalline thin films [J]. Appl. Phys. Lett.,1998,72(25),3270-3272.
[10] Cao H, ZhaoY. G, Ong, H. C, Ho S. T, Dai J. Y, Wu J. Y, Chang R. P. H. Ultraviolet lasing in resonatorsformed by scattering in semiconductor polycrystalline thin films[J]. Appl. Phys. Lett.,1998,73(25),3656-3658.
[11] Wiersma D. The smallest random laser [J]. Nature,2000,406(13),132-133.
[12] B. K. Meyer, H. Alves, D. M. Hofmann, W. Kriegseis, D. Forster, F. Bertram, J. Christen, A. Hoffmann,M. Stra burg, M. Dworzak, U. Haboeck and A. V. Rodina. Bound exciton and donor-acceptor pairrecombinations in ZnO [J]. Phys. Stat. Sol.(b),2004,241,231-260.
[13] N.H. Alvi, M. Willander, O. Nur. The effect of the post-growth annealing on the electroluminescenceproperties of n-ZnO nanorods/p-GaN light emitting diodes [J]. Superlattices and Microstructures,2010,47,754-761.
[14] X.T. Zhang, Y.C. Liu, Z.Z. Zhi, J.Y. Zhang, Y.M. Lu, D.Z. Shen, W. Xu, X.W. Fan, X.G. Kong.Temperature dependence of excitonic luminescence from nanocrystalline ZnO flms [J]. Journal ofLuminescence,2002,99,149-154.
[15] D. Sentosa, B. Liu, L.M. Wong, Y.V. Lim, T.I. Wong, Y.L. Foo, H.D. Sun, S.J. Wang. Temperaturedependent photoluminescence studies of ZnO thin flm grown on (111) YSZ substrate [J]. Journal ofCrystal Growth,2011,319,8-12.
[16] Holtz PO, M onemar B, Lo zykowski H J. Optical proper ties of Ag-related centers in bulk ZnSe [J]. Phys.Rev. B,1985,32,986-996.
[17] Jiang D S, Jung H, Ploog K. Temperature dependence of photoluminescence from GaAs single andmultiple quantum-well heterostructures grown by molecular beam epitaxy [J]. J. Appl. Phys.,1988,64,1371-1377.
[18] M. S. Oh, D. K. Hwang, D. J. Seong, H. S. Hwang, S. J. Park, E. D. Kim. Improvement of characteristicsof Ga-doped ZnO grown by pulsed laser deposition using plasma enhanced oxygen radicals [J]. J.Electrochem. Soc.,2008,155, D599-D603.
[19] K. K. Kim, S. Niki, J. Y. Oh, J. O. Song, T. Y. Seong, S. J. Park, S. Fujita, S. W. Kim. High electronconcentration and mobility in Al-doped n-ZnO epilayer achieved via dopant activation using rapidthermal annealing [J]. J. Appl. Phys.,2005,97,066-103.
[20] N. Ito, Y. Sato, P. K. Song, A. Kaijio, K. Inoue, Y. Shigesato. Electrical and optical properties ofamorphous indium zinc oxide flms [J]. Thin Solid Films,2006,496,99-103.
[21] Tadatsugu Minami. New n-Type Transparent Conducting Oxides [J]. MRS BULLETIN,2000,25,38-44.
[22]叶志镇,吕建国,张银珠,何海平.氧化锌半导体材料掺杂技术与应用[M].浙江:浙江大学出版社2009.18-77.
[23] O. Maksimov. Recent advances and novel approaches of p-type doping of zinc oxide [J]. Rev. Adv. Mater.Sci.,2010,24,26-34.
[24] Yong-Seok Choi, Jang-Won Kang, Dae-Kue Hwang, Seong-Ju Park. Recent Advances in ZnO-BasedLight-Emitting Diodes [J]. IEEE Transactions on Electron Devices,2010,57,26-41.
[25] Atsushi Tsukazaki, Akira Ohtomo, Takeyoshi Onuma, Makoto Ohtani, Takayuki Makino, MasatomoSumiya, Keita Ohtani, Shigefusa F. Chichibu, Syunrou Fuke, Yusaburou Segawa, Hideo Ohno, HideomiKoinuma, Masashi Kawasaki. Repeated temperature modulation epitaxy for p-type doping andlight-emitting diode based on ZnO [J]. Nature Mater,2005,4,42-46.
[26] Jae-Hong Lim, Chang-Ku Kang, Kyoung-Kook Kim, Il-Kyu Park, Dae-Kue Hwang, Seong-Ju Park. UVElectroluminescence Emission from ZnO Light-Emitting Diodes Grown by High-Temperature Radiofrequency sputtering [J].Adv. Mater.2006,18,2720-2724.
[27] Guo-Tong Du, Wang Zhao, Guo-Guang Wu, Zhi-Feng Shi, Xiao-Chuan Xia,Y ang Liu, Hong-Wei Liang,Xin Dong, Yan Ma, Bao-Lin Zhang. Electrically pumped lasing from p-ZnO/n-GaN heterojunction diodes[J]. Appl. Phys. Lett.,2012,101,053503(1-3).
[28] Dae-Kue Hwang, Min-Suk Oh, Jae-Hong Lim, Seong-Ju Park. ZnO thin flms and light-emitting diodes[J]. J. Phys. D: Appl. Phys.,2007,40, R387-R412.
[29] Chang S P, Chuang R W, Chang S J, Chiou Y Z, Lu C Y. MBE n-ZnO/MOCVD p-GaN heterojunctionlight-emitting diode [J]. Thin Solid Films,2009,517,5054-5056.
[30] Wang T, Wu H, Chen C and Liu C. Growth, optical, and electrical properties of nonpolar m-plane ZnO onp-Si substrates with Al2O3buffer layers [J]. Appl. Phys. Lett.,2012,100011901(1-3).
[31] Shih Y T, Wu M K, Chen M J, Cheng Y C, Yang J R and Shiojiri M2010ZnO-based heterojunctionlight-emitting diodes on p-SiC(4H) grown by atomic layer deposition [J]. Appl. Phys. B,2010,98767-772.
[32] Süleyman Tekmen, Emre Gür, Hatice As l, Kübra nar, Cevdet Co kun, Sebahattin Tüzemen.Structural, optical, and electrical properties of n-ZnO/p-GaAs heterojunction [J]. Physica status solidi (a),2010,207,1464-1467.
[33] Hao Long, Guojia Fang, Huihui Huang, Xiaoming Mo, Wei Xia, Binzhong Dong, XianquanMeng, Xingzhong Zhao. Ultraviolet electroluminescence from ZnO/NiO-based heterojunctionlight-emitting diodes [J]. Appl. Phys. Lett.,2009,95,013509(1-3).
[34] B. Ling, X.W. Suna, J.L. Zhao, S.T. Tan, Z.L. Dong, Y. Yang, H.Y. Yu, K.C. Qi. Electroluminescencefrom a n-ZnO nanorod/p-CuAlO2heterojunction light-emitting diode [J]. Physica E,2009,41,635-639.
[35] R. D. Vispute, V. Talyansky, S. Choopun, R. P. Sharma, T. Venkatesan, M. He, X. Tang, J. B. Halpern,M. G. Spenser, Y. X. Li, L. G. Salamansa Riba, A. A. Illadis, K. A. Jones. Heteroepitaxy of ZnO on GaNand its implications for fabrication of hybrid optoelectronic devices [J]. Appl. Phys. Lett.,1998,73,348-350.
[36] S.-K. Hong, H.-J. Ko, Y. Chen, T. J. Yao. Defect characterization in epitaxial ZnO/epi-GaN/Al2O3heterostructures: transmission electron microscopy and triple-axis X-ray diffractometry [J]. J. Cryst.Growth,2000,209,537-541.
[37] M. V. Chukichev, B. M. Ataev, V. V. Mamedov, Y. I. Alivov, and I. I. Khodos. Cathodoluminescence ofZnO/GaN/α-Al2O3heteroepitaxial structures grown by chemical vapor deposition [J]. Semiconductors,2002,36,977-980.
[38] Qing-Xuan Yu, Bo Xu, Qi-Hong Wu, Yuan Liao, Guan-Zhong Wang, Rong-Chuan Fang, Hsin-Ying Lee,Ching-Ting Lee. Optical properties of ZnO-GaN heterostructure and its near-ultraviolet light-emittingdiode [J]. Appl. Phys. Lett.,2003,83,4713-4715.
[39] Ya. I. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, B. M. Ataev. Observation of430nmelectroluminescence from ZnO/GaN heterojunction light-emitting diodes [J]. Appl. Phys. Lett.,2003,83,2943-2945.
[40] Y. I. Alivov, E. V. Kalinina, A. E. Cherenkov, David C. Look, B. M. Ataev, A. K. Omaev, M. V.Chukichev, D. M. Bagnall. Fabrication and Characterization of n-ZnO/p-AlGaN HeterojunctionLight-Emitting Diodes on6H-SiC Substrates [J]. Appl. Phys. Lett.,2003,83,4719-4721.
[41] Cheng Pin Chen, Min Yung Ke, Chien Cheng Liu, and Yuan Jen Chang, Fu Hsiang Yang, Jian JangHuang. Observation of394nm electroluminescence from low-temperature sputtered n-ZnO/SiO2thinflms on top of the p-GaN heterostructure [J]. Appl. Phys. Lett.,2007,91,091107(1-3).
[42] H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M.Lu, Z. K. Tang. Ultralow-Threshold Laser Realized in Zinc Oxide [J]. Adv. Mater.,2009,211613-1617.
[43] J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui,A. M. Wowchak, A. M. Dabiran, P. P. Chow. Improved electroluminescence from n-ZnO/AlN/p-GaNheterojunction light-emitting diodes [J]. Appl. Phys. Lett.,2010,96,201102(1-3).
[44] Huihui Huang, Guojia Fang, Yuan Li, Songzhan Li, Xiaoming Mo, Hao Long, Haoning Wang, David L.Carroll, Xingzhong Zhao. Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaNheterojunction light emitting diodes [J]. Appl. Phys. Lett.,2012,100,233502(1-4).
[45] Hui Wang, Zhifeng Shi, Baolin Zhang, Guoguang Wu, Jin Wang, Yang Zhao,Yan Ma, Guotong Du, XinDong. Study on the luminescence properties of n-ZnO/i-NiO/n-GaN isotype heterojunction diodes [J].Journal of Luminescence,2013,135,16-163.
[46] Lichun Zhang, Qingshan Li, Liang Shang, Zhongjun Zhang, Ruizhi Huang, Fengzhou Zhao.Electroluminescence from n-ZnO: Ga/p-GaN heterojunction light-emitting diodes with differentinterfacial layers [J]. J. Phys. D: Appl. Phys.,2012,45485103(1-6).
[47] Yuanda Liu, Hongwei Liang, Xiaochuan Xia, Rensheng Shen, Yang Liu, Jiming Bian, Guotong Du.Introducing Ga2O3thin flms as novel electron blocking layer to ZnO/p-GaN heterojunction LED[J]. Appl.Phys. B,2012,109605-609.
[48] T. Wang, H. Wu, Z. Wang, C. Chen, C. Liu. Improvement of optical performance of ZnO/GaN p-njunctions with an InGaN interlayer [J]. Appl. Phys. Lett.,2012,101,161905(1-4).
[49] H.Y. XU, Y.C. LIU, Y.X. LIU, C.S. XU, C.L. SHAO, R. MU, Ultraviolet electroluminescence fromp-GaN/i-ZnO/n-ZnO heterojunction light-emitting diodes [J]. Appl. Phys. B,2005,80,871-874.
[50] Elaine Lai, Woong Kim, Peidong Yang. Vertical Nanowire Array-Based Light Emitting Diodes [J]. NanoRes,2008,1,123-128.
[51] O. Lupan, T. Pauporté, B. Viana, P. Aschehoug. Electrodeposition of Cu-doped ZnO nanowire arrays andheterojunction formation with p-GaN for color tunable light emitting diode applications [J].Electrochimica Acta,2011,56,10543-10549.
[52] Chih-Han Chen, Shoou-Jinn Chang, Sheng-Po Chang, Meng-Ju Li, I-Cherng Chen, Ting-Jen Hsueh,Cheng-Liang Hsu. Electroluminescence from n-ZnO nanowires/p-GaN heterostructure light-emittingdiodes [J]. Appl. Phys. Lett.,2009,95,223101(1-3).
[53] R. Guo, J. Nishimura, M. Matsumoto, M. Higashihata, D. Nakamura, T. Okada. Electroluminescence fromZnO nanowire-based p-GaN/n-ZnO heterojunction light-emitting diodes [J]. Appl. Phys. B,2009,94,33-38.
[54] O. Lupan, T. Pauporté, L. Chow, G. Chai, B. Viana, V.V. Ursaki, E. Monaico, I.M. Tiginyanu.Comparative study of the ZnO and Zn1xCdxO nanorod emitters hydrothermally synthesized andelectrodeposited on p-GaN [J]. Applied Surface Science,2012,259,399-405.
[55] Sam-Dong Lee, Yoon-Seok Kim, Min-Su Yi, Jae-Young Choi, Sang-Woo Kim. Morphology Control andElectroluminescence of ZnO Nanorod/GaN Heterojunctions Prepared Using Aqueous Solution [J]. J.Phys. Chem. C,2009,113,8954-8958.
[56] S. G. Zhang, X. W. Zhang, F. T. Si, J. J. Dong, J. X. Wang, X. Liu, Z. G. Yin, H. L. Gao. Ordered ZnOnanorods-based heterojunction light-emitting diodes with graphene current spreading layer [J]. Appl.Phys. Lett.,2012,101,121104(1-4).
[57] Jing Ye, Yu Zhao, Libin Tang, Li-Miao Chen, C. M. Luk, S. F. Yu, S. T. Lee, S. P. Lau. Ultravioletelectroluminescence from two-dimensional ZnO nanomesh/GaN heterojunction light emitting diodes [J].Appl. Phys. Lett.,2011,98,263101(1-3).
[58] Xiao-Mei Zhang, Ming-Yen Lu, Yue Zhang, Lih-J. Chen, Zhong Lin Wang. Fabrication of aHigh-Brightness Blue-Light-Emitting Diode Using a ZnO-Nanowire Array Grown on p-GaN Thin Film[J]. Advanced Materials,2009,21,2767-2770.
[59] Sheng Xu, Chen Xu, Ying Liu, Youfan Hu, Rusen Yang, Qing Yang, Jae-Hyun Ryou, Hee Jin Kim,Zachary Lochner, Suk Choi, Russell Dupuis, Zhong Lin Wang. Ordered Nanowire Array Blue/Near-UVLight Emitting Diodes [J]. Advanced Materials,2010,22,4749-4753.
[60] G. Y. Zhu, C. X. Xu, Y. Lin, Z. L. Shi, J. T. Li, T. Ding, Z. S. Tian, and G. F. Chen.Ultravioletelectroluminescence from horizontal ZnO microrods/GaN heterojunction light-emitting diode array [J].Appl. Phys. Lett.,2012,101,041110(1-4).
[61] N. Bano, S. Zaman, A. Zainelabdin, S. Hussain, I. Hussain, O. Nur, M. Willander. ZnO-organic hybridwhite light emitting diodes grown on flexible plastic using low temperature aqueous chemical method [J].J. Appl. Phy.2010,108,043103(1-5).
[62] Hussain, N. Bano, S. Hussain, O. Nur, M. Willander. Study of intrinsic white light emission and itscomponents from ZnO-nanorods/p-polymer hybrid junctions grown on glass substrates [J]. J. Mater Sci.,2011,46,7437-7442.
[63] Swee Tiam Tan, Junliang Zhao, S. Iwan, Xiao Wei Sun, Xiaohong Tang, Jiandong Ye, M.Bosman, Leijun Tang, Guo-Qiang Lo, K.L. Teo. n-ZnO/n-GaAs Heterostructured White Light-EmittingDiode: Nanoscale Interface Analysis and Electroluminescence Studies [J]. IEEE Transactions on ElectronDevices,2010,57,129-133.
[64] Saraswathi Chirakkara, S. B. Krupanidhi. Gallium and indium co-doped ZnO thin films for white lightemitting diodes [J]. Phys. Status Solid,2012,6,34-36.
[65] Dong Ick Son, Byoung Wook Kwon, Dong Hee Park, Won-Seon Seo, Yeonjin Yi, Basavaraj Angadi,Chang-Lyoul Lee, Won Kook Choi. Emissive ZnO-graphene quantum dots for white-light-emittingdiodes [J]. Nature Nanotechnology,2012,7,465-471.
[66] Arthur H. Reading, Jacob J. Richardson, Chih-Chien Pan, Shuji Nakamura, Steven P. DenBaars. Highefficiency white LEDs with single-crystal ZnO current spreading layers deposited by aqueous solutionepitaxy [J]. Optics Express,2012,20, A13-A19.
[67] L. Zhao, C.S. Xu, Y.X. Liu, C.L. Shao, X.H. Li, Y.C. Liu. A new approach to white light emitting diodesof p-GaN/i-ZnO/n-ZnO heterojunctions [J]. Appl. Phys. B,2008,92,185-188.
[68] Fang Fang, Dongxu Zhao, Xuan Fang, Jinhua Li, Zhipeng Wei, Shaozhuan Wang, Jilong Wu, DezhenShen, Xiaohua Wang. Tunable electroluminescence from n-ZnCdO/p-GaN heterojunction [J]. Journal ofPhysics and Chemistry of Solids,2012,73,217-220.
[69] I. E. Titkov, A. S. Zubrilov, L. A. Delimova, D. V. Mashovets, I. A. Lini chuk, and I. V. Grekhov. WhiteElectroluminescence from ZnO/GaN Structures [J]. Semiconductors,2007,41,564-569.
[70] H. C. Chen, M. J. Chen, Y. H. Huang, W. C. Sun, W. C. Li, J. R. Yang, H. Kuan, M. Shiojiri. White-LightElectroluminescence from n-ZnO/p-GaN Heterojunction Light-Emitting Diodes at Reverse BreakdownBias [J]. IEEE Transactions on Electron Devices,2011,58,3970-3975.
[71] S. Kishwar, K. ul Hasan, N.H. Alvi, P. Klason, O. Nur, M. Willander. A comparative study of theelectrodeposition and the aqueous chemical growth techniques for the utilization of ZnO nanorods onp-GaN for white light emitting diodes [J]. Superlattices and Microstructures,2011,49,32-42.
[72] J R Sadaf, M Q Israr, S Kishwar, O Nur, M Willander. Forward and reverse-biased electroluminescencebehavior of chemically fabricated ZnO nanotubes/GaN interface [J]. Semicond. Sci. Technol.,2011,26,075003(1-6).
[73] N H Alvi, Kamran ul Hasan, Omer Nur, Magnus Willander. The origin of the red emission in n-ZnOnanotubes/p-GaN white light emitting diodes [J]. Nanoscale Research Letters,2011,6,130(1-7).
[74] S. Kishwar, K. ul Hasan, G. Tzamalis, O. Nur, M. Willander, H. S. Kwack, D. Le Si Dang. Electro-opticaland cathodoluminescence properties of low temperature grown ZnO nanorods/p-GaN white light emittingdiodes [J]. Phys. Status Solidi A,2009,207,1-6.
[75] Chih-Han Chen, Shoou-Jinn Chang, Sheng-Po Chang, Meng-Ju Li, I-Cherng Chen, Ting-Jen Hsueh,An-Di Hsu, Cheng-Liang Hsu. Fabrication of a White-Light-Emitting Diode by Doping Gallium into ZnONanowire on a p-GaN Substrate [J]. J. Phys. Chem. C,2010,114,12422-12426.
[76] J. R. Sadaf, M. Q. Israr, S. Kishwar, O. Nur, M. Willander. White Electroluminescence Using ZnONanotubes/GaN Heterostructure Light-Emitting Diode [J]. Nanoscale Res Lett.,2010,5,957-960.
[77] N.H. Alvi, S.M. Usman Ali, S. Hussain, O. Nur and M. Willander. Fabrication and comparative opticalcharacterization of n-ZnO nanostructures (nanowalls, nanorods, nanofowers and nanotubes)/p-GaNwhite-light-emitting diodes [J]. Scripta Materialia,2011,64,697-700.
[1] John R. Arthur. Molecular beam epitaxy [J]. Surface Science,2002,500,189-217.
[2] A.Y. Cho. How molecular beam epitaxy (MBE) began and its projection into the future [J]. Journal ofCrystal Growth,1999,201/202,1-7.
[3] Keiichiro Sakurai, Masahiko Kanehiro, Ken Nakahara, Tetsuhiro Tanabe, Shizuo Fujita, Shigeo Fujita.Effcts of oxygen plasma condition on MBE growth of ZnO [J]. Journal of Crystal Growth,2000,209,522-525.
[4] T. E. Murphy, S. Walavalkar, J. D. Phillips. Epitaxial growth and surface modeling of ZnO on c-planeAl2O3[J]. Appl. Phys. Lett.,2004,85,6338-6340.
[5] W C T Lee1, C E Kendrick, R P Millane, Z Liu, S P Ringer2K Washburn, P T Callaghan, S M Durbin.Porous ZnO nanonetworks grown by molecular beam epitaxy [J]. J. Phys. D: Appl. Phys.,2012,45,135301(1-6).
[6] JAMES J. COLEMAN. Metalorganic Chemical Vapor Deposition for Optoelectronic Devices [J].PROCEEDINGS OF THE IEEE,1997,85,1715-1729.
[7] Alan G. Thompson. MOCVD technology for semiconductors [J]. Materials Letters,1997,30,255-263.
[8] M. Pan, W.E. Fenwick, M. Strassburg, N. Li, H. Kang, M.H. Kane, A. Asghar, S. Gupta, R. Varatharajan, J.Nause, N. El-Zein, P. Fabiano, T. Steiner, I. Ferguson. Metal-organic chemical vapor deposition of ZnO[J]. Journal of Crystal Growth,2006,287,688-693.
[9] K. Remashan, Y. S. Choi, S. J. Park, J. H. Jang. High Performance MOCVD-Grown ZnO Thin-FilmTransistor with a Thin MgZnO Layer at Channel/Gate Insulator Interface [J]. Journal of theElectrochemical Society,2010,157, H1121-H1126.
[10] S.-H. Park, S.-Y. Seo, S.-H. Kim, S.-W. Han. Homoepitaxial ZnO flm growth on vertically aligned ZnOnanorods [J]. Journal of Crystal Growth,2007,303,580-584.
[11] Steven M. George. Atomic Layer Deposition:An Overview [J]. Chem. Rev.2010,110,111-131.
[12] E. Guziewicz, M. Godlewski, T. Krajewski,. Wachnicki, A. Szczepanik, K. Kopalko, A.Wójcik-G odowska, E. Prze dziecka, W. Paszkowicz, E. usakowska, P. Kruszewski, N. Huby, G.Tallarida, S. Ferrari. ZnO grown by atomic layer deposition: A material for transparent electronics andorganic heterojunctions [J]. J.Appl. Phys.,2009,105,122413(1-5).
[13] Seung-Mo Lee, Gregor Grass, Gyeong-Man Kim, Christian Dresbach, Lianbing Zhang, Ulrich G sele,Mato Knez. Low-temperature ZnO atomic layer deposition on biotemplates: flexible photocatalytic ZnOstructures from eggshell membranes [J]. Phys. Chem. Chem. Phys.,2009,11,3608-3614.
[14] Alexandre Pourret, Philippe Guyot-Sionnest, Jeffrey W. Elam. Atomic Layer Deposition of ZnO inQuantum Dot Thin Films [J].Adv. Mater.2008,20,1-4.
[15] J. W. Elam, S. M. George. Growth of ZnO/Al2O3Alloy Films Using Atomic LayerDeposition Techniques[J]. Chem. Mater.,2003,15,1020-1028.
[16] P.J. Kelly, R.D. Arnell. Magnetron sputtering: a review of recent developments and applications [J].Vacuum,2000,56,159-172.
[17] Q.P. Wang, D.H. Zhang, H.L. Ma, X.H. Zhang, X.J. Zhang. Photoluminescence of ZnO flms prepared byr.f. sputtering on different substrates [J]. Applied Surface Science,2003,220,12-18.
[18] Jae Keun Seo, Ki-han Ko, Hyung Jun Cho, Won Seok Choi, Mungi Park, Kyung-han Seo. Synthesis andCharacterization of Al-Doped Zinc Oxide Films by an Radio Frequency Magnetron Sputtering Methodfor Transparent Electrode Applications [J]. Transactions on Electrical and Electronic Materials,2010,11,29-32.
[19] Rashmi Menon, Vinay Gupta, H. H. Tan, K. Sreenivas, C. Jagadish. Origin of stress in radio frequencymagnetron sputtered zinc oxide thin films [J]. J. Appl. Phys.,2011,109,064905(1-6).
[20] Kwang Sik Kim, Hyoun Woo Kim, NamHo Kim. Structural characterization of ZnO flms grown on SiO2by the RF magnetron sputtering [J]. Physica B,2003,334,343-346.
[21] Howard M. Smith andA. F. Turner. Vacuum Deposited Thin Films Using a Ruby Laser [J]. AppliedOptics,1965,4,147-148.
[22] D. Dijkkamp, T. Venkatesan, X. D. Wu, S. A. Shaheen, N. Jisrawi, Y. H. Min Lee, W. L. McLean, M.Croft. Preparation of Y-Ba-Cu oxide superconductor thin films using pulsed laser evaporation from highT(c) bulk material [J]. Appl. Phys. Lett.,1987,51,619-621
[23] V. VasanthiPillay1, K. Vijayalakshmi. Influence of Sputter Deposition Time on the Growth of c-AxisOriented AlN/Si Thin Films for Microelectronic Application [J]. Journal of Minerals and MaterialsCharacterization and Engineering,2012,11,724-729.
[24] P.S. Banks, L. Dinh, B.C. Stuart, M.D. Feit, A.M. Komashko, A.M. Rubenchik, M.D. Perry, W. McLean.Short-pulse laser deposition of diamond-like carbon thin flms [J].Appl. Phys. A,1999,69, S347-S353.
[25] L.D. Wang, H.S. Kwok. Pulsed laser deposition of organic thin flms [J]. Thin Solid Films,2000,363,58-60.
[26] J. Schubert, M. Siegert, M. Fardmanesh, W. Zander, M. Proèmpers, Ch. Buchal, Judit Lisoni, C.H. Lei.Superconducting and electro-optical thin flms prepared by pulsed laser deposition technique [J]. AppliedSurface Science,2000,168,208-214.
[27] He J, Jiang JC, Liu J, Collins G, Chen CL, Lin B, Giurgiutiu V, Guo RY, Bhalla A, Meletis EI.Ferroelectric BaTiO3thin films on Ti substrate fabricated using pulsed-laser deposition [J]. J NanosciNanotechnol.,2010,10,45-50.
[28] V. Craciun, J. Elders, J. G. E. Gardeniers, Ian W. Boyd. Characteristics of high quality ZnO thin flmsdeposited by pulsed laser deposition [J]. Appl. Phys. Lett.,1994,65,2963-2965.
[29] Yolanda Y. Villanueva, Da-Ren Liu, Pei Tzu Cheng. Pulsed laser deposition of zinc oxide [J]. Thin SolidFilms,2006,501,366-369.
[30] Lei Zhao, Jianshe Lian, Yuhua Liu, Qing Jiang. Structural and optical properties of ZnO thin flmsdeposited on quartz glass by pulsed laser deposition [J]. Applied Surface Science,2006,252,8451-8455.
[31] S. Karamat, R.S. Rawat, T.L. Tan, P. Lee, S.V. Springhama, E. Ghareshabani, R. Chen, H.D. Sun.Nitrogen doping in pulsed laser deposited ZnO thin flms using dense plasma focus [J]. Applied SurfaceScience,2011,257,1979-1985.
[32] Xue Wang, Yong Ding, Dajun Yuan, Jung-Il Hong, Yan Liu, C. P. Wong, Chenguo Hu, Zhong Lin Wang.Reshaping the Tips of ZnO Nanowires by Pulsed Laser Irradiation [J]. Nano Res.2012,5,412-420.
[33] Yong-hong Ni, Xian-wen Wei, Jian-ming Hong, Yin Ye. Hydrothermal preparation and optical propertiesof ZnO nanorods [J]. Materials Science and Engineering B,2005,121,42-47.
[34] J X Wang, X W Sun, Y Yang, H Huang, Y C Lee, O K Tan, L Vayssieres. Hydrothermally grown orientedZnO nanorod arrays for gas sensing applications [J]. Nanotechnology,2006,17,4995-4998.
[35] D. Polsongkram, P. Chamninok, S. Pukird, L. Chow, O. Lupan, G. Chai, H. Khallaf, S. Park, A. Schulte.Effect of synthesis conditions on the growth of ZnO nanorods via hydrothermal method [J]. Physica B,2008,403,3713-3717.
[36] J P Liu, C X Xu, G P Zhu, X Li, Y P Cui, Y Yang, X W Sun. Hydrothermally grown ZnO nanorods onself-source substrate and their feld emission [J]. J. Phys. D:Appl. Phys.,2007,40,1906-1909.
[37] Xiaoyong Xu, Chunxiang Xu, Yi Lin, Tao Ding, Shengjiang Fang, Zengliang Shi, Weiwei Xia, JingguoHu. Surface photoluminescence and magnetism in hydrothermally grown undoped ZnO nanorod arrays[J]. Appl. Phys. Lett.,2012,100,172401(1-5).
[38]张跃.一维氧化锌纳米材料[M].北京：科学出版社，2010，105-110.
[39] Ye Sun, D. Jason Riley, Michael N. R. Ashfold. Mechanism of ZnO Nanotube Growth by HydrothermalMethods on ZnO Film-Coated Si Substrates [J]. J. Phys. Chem. B,2006,110,15186-15192.
[40]马自侠，李清山，张立春，赵风周，袁润，两步法生长ZnO纳米棒的结构及发光特性[J].光电子·激光,2012,5,819-823.
[41]郭素枝.扫描电镜技术及其应用[M].厦门：厦门大学出版社，2006，30-35.
[42]An Introduction to Electron Microscopy. Available: http://www.fei.com.
[43]Atomic Force Microscope (AFM). Available: http://pharm.virginia.edu/AFM.html.
[44] Kung H P，Alexander LE. X-ray diffraetion Proeedures for Polyerystalline and amorphous materials [M].NeWYork: Wiley.1974，
[45]固体发光[M].中国科学院与中国科技大学合编，1976，160-180.
[46]徐叙瑢，苏勉曾.发光学与发光材料[M].北京：化学工业出版社，2004，1-10.
[47]Adrian Kitai. Luminescent Materials andApplications [M]. John Wiley&Sons,2008.
[48] G.Blasse, B.C.Grabmaier. Luminescence Materials [M]. Springer-Verlag,1994.
[1] Hang Ju Ko, Yefan Chen, Soon Ku Hong, Takafumi Yao. MBE growth of high-quality ZnO flms onepi-GaN [J]. Journal of Crystal Growth,2000,209,816-821.
[2] Yinzhen Wang, Shunquan Wang, Shengming Zhou, Jun Xu, Jiandong Ye, Shulin Gu, Rong Zhang, QiushiRen. Effects of sapphire substrate annealing on ZnO epitaxial flms grown by MOCVD [J]. AppliedSurface Science,2006,253,1745-1747.
[3] Parag Banerjee, Won-Jae Lee, Ki-Ryeol Bae, Sang Bok Lee, Gary W. Rubloff. Structural, electrical, andoptical properties of atomic layer deposition Al-doped ZnO flms [J]. J. Appl. Phys.,2010,108,043504(1-7).
[4] Lei Zhao, Jianshe Lian, Yuhua Liu, Qing Jiang. Structural and optical properties of ZnO thin flmsdeposited on quartz glass by pulsed laser deposition [J]. Applied Surface Science,2006,252,8451-8455.
[5] Kwang Sik Kim, Hyoun Woo Kim, Nam Ho Kim. Structural characterization of ZnO flms grown on SiO2by the RF magnetron sputtering [J]. Physica B,2003,334,343-346.
[6] A. Kuroyanagi. Properties of aluminum-doped ZnO thin flms grown by electron beam evaporation [J]. Jpn.J.Appl. Phys.,1989,28,219-222.
[7] N. Gopalakrishnan, B.C. Shina, H.S. Lim, G.Y. Kim, Y.S. Yu. Comparison of ZnO:GaN films on Si(111)and Si(100) substrates by pulsed laser deposition[J]. Physica B,2006,376-377,756-759.
[8] X.M. Fan, J.S. Lian, Z.X. Guo, H.J. Lu. Microstructure and photoluminescence properties of ZnO thinfilms grown by PLD on Si(111) substrates. Applied Surface Science,2005,239,176-181.
[9] Venkatachalam S, Iida Y, Kanno Yoshinori, Preparation and characterization of Al doped ZnO thin filmsby PLD [J]. Superlattices and Microstructures,2008,44,127-135.
[10] WEI Xian-qi, ZHANG Ming-yang, MAN Bao-yuan, Study of annealing property and blue-emissionmechanism of ZnO thin films deposited by PLD [J], Journal of Optoelectronics.Laser,2009,20,897-900(in Chinese).
[11] M. Liu, X.Q. Wei, Z.G. Zhang, G. Sun, C.S. Chen, C.S. Xue, H.Z. Zhuang, B.Y. Man. Effect oftemperature on pulsed laser deposition of ZnO films [J].Applied Surface Science,2006,252,4321-4326.
[12] X.L. Xu, S.P. Lau, J.S. Chen, Z. Sun, B.K. Tay, J.W. Chai. Dependence of electrical and optical propertiesof ZnO flms on substrate temperature [J]. Materials Science in Semiconductor Processing,2001,4,617-620.
[13] Kwang-Sik Kim, Hyoun Woo Kim, Chong Mu Lee. Effect of growth temperature on ZnO thin flmdeposited on SiO2substrate [J]. Materials Science and Engineering B,2003,98,135-139.
[14] J.F. Chang, M.H. Hon. The effect of deposition temperature on the properties of Al-doped zinc oxide thinflms [J]. Thin Solid Films,2001,386,79-86.
[15] Sukhvinder Singh, R.S. Srinivasa, S.S. Major. Effect of substrate temperature on the structure and opticalproperties of ZnO thin films deposited by reactive rf magnetron sputtering [J]. Thin Solid Films,2007,515,8718-8722.
[16] LI Shao-lan, Zhang Li-chun, Zhang Zhong-jun, Huang Rui-zhi. Structural and PhotoluminescenceProperties of ZnO Films Grown on Al2O3(0001) by Pulsed Laser Deposition Technique [J]. Infrared,2012,33,12-16(in Chinese).
[17] Haibo Zeng, Guotao Duan, Yue Li, Shikuan Yang, Xiaoxia Xu, Weiping Cai, Blue Luminescence of ZnONanoparticles Based on Non-Equilibrium Processes: Defect Origins and Emission Controls [J]. Adv.Funct. Mater.,2010,20,561-572.
[18] Yinyan Gong, Tamar Andelman, Gertrude F Neumark, Stephen O’Brien, Igor L Kuskovsky, Origin ofdefect-related green emission from ZnO nanoparticles: effect of surface modification [J]. Nanoscale Res.Lett.,2007,2,297-302.
[19] Wang Zhaoyang, Hu Lizhong. Effect of oxygen pressure on the structural and optical properties of ZnOthin flms on Si (111) by PLD [J]. Vacuum,2009,83,906-909.
[20] Jae Hyung Jo, Tae-Bong Hur, Jin Sung Kwak, Dae Young Kwon, Yoon-Hwae Hwang, Hyung Kook Kim.Efects of Oxygen Pressure on the Crystalline of ZnO Films Grown on Sapphire by PLD Method [J].Journal of the Korean Physical Society,2005,47, S300-S303.
[21] Bai Lin Zhu, Xing Zhong Zhao, Sheng Xu, Fu Hai Su, Guo Hua Li, Xiao Guang Wu, Jun Wu, Run Wu,Jing Liu. Oxygen Pressure Dependences of Structure and Properties of ZnO Films Deposited onAmorphous Glass Substrates by Pulsed Laser Deposition [J]. Jpn. J. Appl. Phys.,2008,47,2225-2229.
[22] S. Choopun, R. D. Vispute, W. Noch, A. Balsamo, R. P. Sharma, T. Venkatesan, A. Iliadis, D. C. Look.Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire [J].Appl. Phys. Lett.,1999,75,3947(1-3).
[23] Ruijin Hong, Hongji Qi, Jianbing Huang, Hongbo He, Zhengxiu Fan, Jianda Shao. Influence of oxygenpartial pressure on the structure and photoluminescence of direct current reactive magnetron sputteringZnO thin films [J]. Thin Solid Films,2005,473,58-62.
[24] Sang Sub Kim, Byung-Teak Lee. Effects of oxygen pressure on the growth of pulsed laser deposited ZnOfilms on Si (001)[J]. Thin Solid Films,2004,446,307-312.
[25] Jianguo Lv, Wanbing Gong, Kai Huang, Jianbo Zhu, Fanming Meng, Xueping Song, Zhaoqi Sun. Effectof annealing temperature on photocatalytic activity of ZnO thin flms prepared by sol–gel method [J].Superlattices and Microstructures,2011,50,98-106.
[26] Z.B. Fang, Z.J. Yan, Y.S. Tan, X.Q. Liu, Y.Y. Wang. Infuence of post-annealing treatment on the structureproperties of ZnO flms [J].Applied Surface Science,2005,241,303-308.
[27] Z Z Zhi, Y C Liu, B S Li, X T Zhang, Y M Lu, D Z Shen, X W Fan. Effects of thermal annealing on ZnOfilms grown by plasma enhanced chemical vapour deposition from Zn(C2H5)2and CO2gas mixtures [J]. J.Phys. D:Appl. Phys.,2003,36,719-722.
[28] Shoubin Xue, Huizhao Zhuang, Chengshan Xue, Shuyun Teng, Lijun Hu. Effect of annealing temperatureon properties of ZnO thin films on Si (111) substrates by magnetron sputtering [J]. The European PhysicalJournal Applied Physics,2006,36,1-4.
[29] A.B. Djurisic, A.M.C. Ng, X.Y. Chen. ZnO nanostructures for optoelectronics: Material properties anddevice applications [J]. Progress in Quantum Electronics,2010,34,191-259.
[30] Zhong Lin Wang. Zinc oxide nanostructures: growth, properties and applications [J]. J. Phys.: Condens.Matter,2004,16, R829-R858.
[31] Gyu-Chul Yi, Chunrui Wang and Won II Park. ZnO nanorods: synthesis, characterization and applications[J]. Semicond. Sci. Technol.,2005,20, S22-S34.
[32] J X Wang, X W Sun, Y Yang, H Huang, Y C Lee, O K Tan, L Vayssieres. Hydrothermally grown orientedZnO nanorod arrays for gas sensing applications [J]. Nanotechnology,2006,17,4995-4998.
[33] M.W. Zhu, N. Huang, J. Gong, B. Zhang, Z.J. Wang, C. Sun· X. Jiang. Growth of ZnO nanorod arrays bysol–gel method: transition from two-dimensional flm to one-dimensional nanostructure [J]. Appl Phys A,2011,103,159-166.
[34] Xiang Liu, Xiaohua Wu, Hui Cao, R. P. H. Chang. Growth mechanism and properties of ZnO nanorodssynthesized by plasma-enhanced chemical vapor deposition [J]. J.Appl. Phys.,2004,95,3141-3147.
[35] Chun Li, Guojia Fang, Jun Li, Lei Ai, Binzhong Dong, Xingzhong Zhao. Effect of Seed Layer onStructural Properties of ZnO Nanorod Arrays Grown by Vapor-Phase Transport [J]. J. Phys. Chem.C,2008,112,990-995.
[36] Yinglei Tao, Ming Fu, Ailun Zhao, Dawei He, Yongsheng Wang. The effect of seed layer on morphologyof ZnO nanorod arrays grown by hydrothermal method [J]. Journal of Alloys and Compounds,2010,489,99-102.
[1] ü. zgür, Ya. I. Alivov, C. Liu, A. Teke，M. A. Reshchikov, S. Do an, V. Avrutin, S.-J. Cho, H. Morko. Acomprehensive review of ZnO materials and devices [J]. J. Appl. Phys.,2005,98,041301(1-103).
[2] Oleg Maksimov. Recent advances and novel approaches of p-type doping of zinc oxide [J]. Rev. Adv.Mater. Sci.,2010,24,26-34.
[3] S.P. Chang, R.W. Chuang, S.J. Chang, Y.Z. Chiou, C.Y. Lu. MBE n-ZnO/MOCVD p-GaN heterojunctionlight-emitting diode [J]. Thin Solid Films,2009,517,5054-5056.
[4] T. Wang, H. Wu, C. Chen, C. Liu. Growth, optical, and electrical properties of nonpolar m-plane ZnO onp-Si substrates withAl2O3buffer layers [J].Applied Physics Letters,2012,100,011901(1-3).
[5] Y.T. Shih, M.K. Wu, M.J. Chen, Y.C. Cheng, J.R. Yang, M. Shiojiri. ZnO-based heterojunctionlight-emitting diodes on p-SiC(4H) grown by atomic layer deposition [J]. Appl Phys B,2010,98,767-772.
[6] J. R. Sadaf, M. Q. Israr, S. Kishwar, O. Nur, M. Willander. White electroluminescence using ZnOnanotubes/GaN heterostructure light-emitting diode [J]. Nanoscale Res. Lett.,2010,5,957-960
[7] J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A.M. Wowchak, A. M. Dabiran, P. P. Chow. Improved electroluminescence from n-ZnO/AlN/p-GaNheterojunction light-emitting diodes [J]. Applied Physics Letters,2010,96,201102(1-3).
[8] Yungting Chen, Hanyu Shih, Chunhsiung Wang, Chunyi Hsieh, Chihwei Chen, Yangfang Chen, TaiyuanLin.Ultraviolet electroluminescence from hybrid inorganic/organic ZnO/GaN/poly (3-hexylthiophene)dual heterojunctions [J]. Optics express,2011,19, A319-A325.
[9] Shrawan Jha, Jin-Cheng Qian, Oleksandr Kutsay, Jaroslav Kovac Jr, Chun-Yan Luan, Juan Antonio Zapien,Wenjun Zhang, Shuit-Tong Lee, Igor Bello. Violet-blue LEDs based on p-GaN/n-ZnO nanorods and theirstability [J]. Nanotechnology,2011,22,245202(1-8).
[10] R. D. Vispute, V. Talyansky, S. Choopun, R. P. Sharma, T. Venkatesan, M. He, X. Tang, J. B. Halpern,M. G. Spenser, Y. X. Li, L. G. Salamansa Riba, A. A. Illadis, K. A. Jones. Heteroepitaxy of ZnO on GaNand its implications for fabrication of hybrid optoelectronic devices [J]. Appl. Phys. Lett.,1998,73,348-350.
[11] Ya. I. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, B. M. Ataev. Observation of430nmelectroluminescence from ZnO/GaN heterojunction light-emitting diodes [J]. Appl. Phys. Lett.,2003,83,2943-2945.
[12] H. Amano, M. Kito, K. Hiramatsu, I. Akasaki. P-Type Conduction in Mg-Doped GaN Treated withLow-Energy Electron Beam Irradiation (LEEBI)[J]. Jpn. J. Appl. Phys.,1989,28, L2112-L2114.
[13] S. Nakamura, T. Mukai, M. Senoh, N. Iwasa. Hole Compensation Mechanism of P-Type GaN Films [J].Jpn. J. Appl. Phys.31,1992,1258-1266.
[14] T.S. Jeong, C.J. Youn, M.S. Han, J.W. Yang, K.Y. Lim. Analysis of Mg-relatedemissions in p-GaNgrown by MOCVD [J]. Journal of Crystal Growth,2003,259,267-272.
[15] S.J. Chung, E.-K. Suh, H.J. Lee, H.B. Mao, S.J. Park. Photoluminescence and photocurrent studies ofp-type GaN with various thermal treatments [J]. Journal of Crystal Growth,2002,235,49-54.
[16] SUI Yan-Ping, YU Guang-Hui. Efect of Mg Doping on the Photoluminescence of GaN:Mg Films byRadio-Frequency Plasma-Assisted Molecular Beam Epitaxy [J]. CHIN. PHYS. LETT.,2011,28,067807(1-4).
[17] Ho Won Jang, Jong-Lam Lee. Mechanism for ohmic contact formation of Ni/Ag contacts on p-type GaN[J]. Applied Physics Letters,2004,85(24):5920-5922.
[18] Chi-Sen Lee, Yow-Jon Lin, Ching-Ting Lee. Investigation of oxidation mechanism for ohmic formationin Ni/Au contacts to p-type GaN layers [J]. Applied Physics Letters,2001,79(23),3815-3817.
[19] Ray-Hua Horng, Dong-Sing Wuu, Yi-Chung Lien, et al. Low-resistance and high-transparency Ni/indiumtin oxide ohmic contacts to p-type GaN [J]. Applied Physics Letters,2001,79(18),2925-2927.
[20] June-O Song, Dong-Seok Leem, Tae-Yeon Seong. Formation of low resistance and transparent ohmiccontacts to p-type GaN using Ni-Mg solid solution [J]. Applied Physics Letters,2003,83,3513-3515.
[21] R. L. Anderson. Germanium-gallium arsenide heterojunction [J]. IBM J. Res. Dev.,1960,4,283-287.
[22]虞丽生.半导体异质结物理[M].北京：科学出版社，2006.182-183.
[23] Bo Hyun Kong, Won Suk Han, Young Yi Kim, Hyung Koun Cho, Jae Hyun Kim. Heterojunction lightemitting diodes fabricated with different n-layer oxide structures on p-GaN layers by magnetronsputtering [J]. Applied Surface Science,2010,256,4972-4976.
[24] Sheng Xu, Chen Xu, Ying Liu, Youfan Hu, Rusen Yang, Qing Yang, Jae-Hyun Ryou, Hee Jin Kim,Zachary Lochner, Suk Choi, Russell Dupuis, Zhong Lin Wang. Ordered Nanowire Array Blue/Near-UVLight Emitting Diodes [J]. Adv. Mater.,2010,22,4749-4753.
[25] T.P. Yang, H.C. Zhu, J.M. Bian, J.C. Sun, X. Dong, B.L. Zhang, H.W. Liang, X.P. Li, Y.G. Cui, G.T. Du.Room temperature electroluminescence from the n-ZnO/p-GaN heterojunction device grown by MOCVD[J]. Materials Research Bulletin,2008,43,3614-3620.
[26] S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, Z. G. Wang, S. Qu, B. Cui, A. M.Wowchak, A. M. Dabiran, P. P. Chow. Improvement of electroluminescent performance ofn-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer [J]. J. Appl. Phys.,2011,109,093708(1-6).
[27] Huihui Huang, Guojia Fang, Yuan Li, Songzhan Li, Xiaoming Mo, Hao Long, Haoning Wang, David L.Carroll, Xingzhong Zhao. Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaNheterojunction light emitting diodes [J]. Appl. Phys. Lett.,2012,100,233502(1-4).
[28] Sejoon Lee, Deuk Young Kim. Characteristics of ZnO/GaN heterostructure formed on GaN substrate bysputtering deposition of ZnO [J]. Materials Science and Engineering B,2007,137,8084.
[29] Seung-Ho Hwang, Tae-Hoon Chung and Byung-Teak Lee. Study on the interfacial layer in ZnO/GaNheterostructure light-emitting diode [J]. Materials Science and Engineering B,2009,157,32-35.
[30] H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M.Lu, Z. K. Tang. Ultralow-Threshold Laser Realized in Zinc Oxide [J]. Adv. Mater.,2009,21,1613-1617.
[31] J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui,A. M. Wowchak, A. M. Dabiran, P. P. Chow. Improved electroluminescence from n-ZnO/AlN/p-GaNheterojunction light-emitting diodes [J]. Appl. Phys. Lett.,2010,96,201102(1-3).
[32] H.Y. XU, Y.C. LIU, Y.X. LIU, C.S. XU, C.L. SHAO, R. MU, Ultraviolet electroluminescence fromp-GaN/i-ZnO/n-ZnO heterojunction light-emitting diodes [J]. Appl. Phys. B,2005,80,871-874.
[33] Won Suk Han, Young Yi Kim, Bo Hyun Kong, Hyung Koun Cho, Ultraviolet light emitting diode withn-ZnO:Ga/i-ZnO/p-GaN:Mg heterojunction [J]. Thin Solid Films,2009,517,5106-5109.
[34] Sheng Xu, Chen Xu, Ying Liu, Youfan Hu, Rusen Yang, Qing Yang, Jae-Hyun Ryou, Hee Jin Kim,Zachary Lochner, Suk Choi, Russell Dupuis, Zhong Lin Wang. Ordered Nanowire Array Blue/Near-UVLight Emitting Diodes [J]. Advanced Materials,2010,22,4749-4753.
[35] N H Alvi, Kamran ul Hasan, Omer Nur, Magnus Willander. The origin of the red emission in n-ZnOnanotubes/p-GaN white light emitting diodes [J]. Nanoscale Research Letters,2011,6,130(1-7).
[1] Ya. I. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, B. M. Ataev. Observation of430nmelectroluminescence from ZnO/GaN heterojunction light-emitting diodes [J]. Appl. Phys. Lett.,2003,83,2943-2945.
[2] H.Y. XU, Y.C. LIU, Y.X. LIU, C.S. XU, C.L. SHAO, R. MU, Ultraviolet electroluminescence fromp-GaN/i-ZnO/n-ZnO heterojunction light-emitting diodes [J]. Appl. Phys. B,2005,80,871-874.
[3] J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A.M. Wowchak, A. M. Dabiran, P. P. Chow. Improved electroluminescence from n-ZnO/AlN/p-GaNheterojunction light-emitting diodes [J]. Appl. Phys. Lett.,2010,96,201102(1-3).
[4] H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M.Lu, Z. K. Tang. Ultralow-Threshold Laser Realized in Zinc Oxide [J]. Adv. Mater.,2009,211613-1617.
[5] Huihui Huang, Guojia Fang, Yuan Li, Songzhan Li, Xiaoming Mo, Hao Long, Haoning Wang, David L.Carroll, Xingzhong Zhao. Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaNheterojunction light emitting diodes [J]. Appl. Phys. Lett.,2012,100,233502(1-4).
[6] Tzu-Chun Lu, Min-Yung Ke, Sheng-Chieh Yang, Yun-Wei Cheng, Liang-Yi Chen, Guan-Jhong Lin,Yu-Hsin Lu, Jr-Hau He, Hao-Chung Kuo, JianJang Huang. Characterizations of low-temperatureelectroluminescence from ZnO nanowire light-emitting arrays on the p-GaN layer [J]. OPTICS LETTERS,2010,35,4109-4111.
[7] Songzhan Li, Guojia Fang, Hao Long, Xiaoming Mo, Huihui Huang, Binzhong Dong, Xingzhong Zhao.Enhancement of ultraviolet electroluminescence based on n-ZnO/n-GaN isotype heterojunction with lowthreshold voltage [J]. Appl. Phys. Lett.,2010,96,201111(1-3).
[8] W. Z. Liu, H. Y. Xu, L. X. Zhang, C. Zhang, J. G. Ma, J. N. Wang, Y. C. Liu. Localized surfaceplasmon-enhanced ultraviolet electroluminescence from n-ZnO/i-ZnO/p-GaN heterojunction lightemitting diodes via optimizing the thickness of MgO spacer layer [J]. Appl. Phys. Lett.,2012,101,142101(1-5).
[9] S. Nakamura, T. Mukai, M. Senon. High-Power GaN P-N Junction Blue-Light-Emitting Diodes [J]. Jpn. J.Appl. Phys.,1991,30, L1998-L2001.
[10] M. Asif Khan, Qchen, R.A. Skogman, J.N. Kuznia. Violet-blue GaN homojunction light emitting diodeswith rapid thermal annealed p-type layers [J]. Appl. Phys. Lett.,1995,66,2046-2048.
[11] Haibo Zeng, Guotao Duan, Yue Li, Shikuan Yang, Xiaoxia Xu, Weiping Cai, Blue Luminescence of ZnONanoparticles Based on Non-Equilibrium Processes: Defect Origins and Emission Controls [J]. Adv.Funct. Mater.,2010,20,561-572.
[12] Yinyan Gong, Tamar Andelman, Gertrude F Neumark, Stephen O’Brien, Igor L Kuskovsky, Origin ofdefect-related green emission from ZnO nanoparticles: effect of surface modification [J]. Nanoscale Res.Lett.,2007,2,297-302.
[13] Lichun Zhang, Qingshan Li, Liang Shang, Zhongjun Zhang, Ruizhi Huang, Fengzhou Zhao.Electroluminescence from n-ZnO:Ga/p-GaN heterojunction light-emitting diodes with different interfaciallayers [J]. J. Phys. D: Appl. Phys.,2012,45,485103(1-6).
[14] Songzhan Li, Guojia Fan, Hao Long, Haoning Wang, Huihui Huang, Xiaoming Mo, Xingzhong Zhao.Low-threshold pure UV electroluminescence from n-ZnO:Al/i-layer/n-GaN heterojunction [J]. Journal ofLuminescence,2012,132,1642-1645.
[15] Y W Zhang, X M Li, W D Yu, X D Gao, Y F Gu, C Yang, J L Zhao, X W Sun, S T Tan, J F Kong, W ZShen. Epitaxial growth and luminescence properties of ZnO-based heterojunction light-emitting diode onSi (111) substrate by pulsed-laser deposition [J]. J. Phys. D: Appl. Phys.,2008,41,205105(1-6).
[16] S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, Z. G. Wang, S. Qu, B. Cui, A. M.Wowchak, A. M. Dabiran, P. P. Chow. Improvement of electroluminescent performance ofn-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer [J]. J. Appl. Phys.,2011,109,093708(1-6).
[17] Xiaosheng Fang, Tianyou Zhai, Ujjal K. Gautam, Liang Li, Limin Wu, Yoshio Bando, Dmitri Golberg.ZnS nanostructures: From synthesis to applications [J]. Progress in Materials Science,2011,56,175-287.
[18] K. M. Yeung, W. S. Tsang, C. L. Mak, K. H. Wong. Optical studies of ZnS: Mn films grown by pulsedlaser deposition [J]. J. Appl. Phys.,2002,92,3636-3640.
[19] Jian Huang, Linjun Wang, Ke Tang, Jijun Zhang, Weimin Shi, Yiben Xia, Xionggang Lu. Growth of ZnSfilms and application in heterojunction [J]. Advanced Materials Research,2011,287-290,2140-2143.
[20] M. McLaughlin, H. F. Sakeek, P. Maguire, W. G. Graham, J. Molloy. Properties of ZnS thin filmsprepared by248nm pulsed laser deposition [J]. Appl. Phys. Lett.,1993,63,1865-1867.
[21] Dong Hyun Hwang, Jung Hoon Ahn, Kwun Nam Hui, Kwan San Hui, Young Guk Son. Structural andoptical properties of ZnS thin films deposited by RF magnetron sputtering [J]. Nanoscale Research Letters,2012,7,26(1-7).
[22] Xiaosheng Fang, Yoshio Bando, Ujjal K. Gautam, Tianyou Zhai, Haibo Zeng, Xijin Xu, Meiyong Liao,Dmitri Golberg. ZnO and ZnS Nanostructures: Ultraviolet-Light Emitters, Lasers, and Sensors [J]. CriticalReviews in Solid State and Materials Sciences,2009,34,190-23.
[23] Ming-Yen Lu, Jinhui Song, Ming-Pei Lu, Chung-Yang Lee, Lih-Juann Chen, Zhong Lin Wang. ZnO-ZnSHeterojunction and ZnS Nanowire Arrays for Electricity Generation [J]. ACS Nano.,2009,3,357-362.
[24] Xia Fan, Ming-Liang Zhang, Ismathullakhan Shafq, Wen-Jun Zhang, Chun-Sing Lee, Shuit-Tong Lee.ZnS/ZnO Heterojunction Nanoribbons [J]. Adv. Mater.,2009,21,2393-2396.
[25] G. Y. Zhu, C. X. Xu, Y. Lin, Z. L. Shi, J. T. Li, T. Ding, Z. S. Tian, G. F. Chen. Ultravioletelectroluminescence from horizontal ZnO microrods/GaN heterojunction light-emitting diode array [J].Appl. Phys. Lett.,2012,101,041110(1-4).
[26] Sheng Xu, Chen Xu, Ying Liu, Youfan Hu, Rusen Yang, Qing Yang, Jae-Hyun Ryou, Hee Jin Kim,Zachary Lochner, Suk Choi, Russell Dupuis, Zhong Lin Wang. Ordered Nanowire Array Blue/Near-UVLight Emitting Diodes [J]. Adv. Mater.,2010,22,4749-4753.
[27] Huihui Huang, Guojia Fang, Songzhan Li, Hao Long, Xiaoming Mo, Haoning Wang, Yuan Li, Qike Jiang,David L. Carroll, Jianbo Wang, Mingjun Wang, Xingzhong Zhao. Ultraviolet/orange bicolorelectroluminescence from an n-ZnO/n-GaN isotype heterojunction light emitting diode [J]. Appl. Phys.Lett.,2011,99,263502(1-4).
[28] Ju Young Lee, Jong Hoon Lee, Hong Seung Kim, Chung-Hyun Lee, Hyung-Soo Ahn, Hyung Koun Cho,Young Yi Kim, Bo Hyun Kong, Ho Seong Lee. A study on the origin of emission of the annealedn-ZnO/p-GaN heterostructure LED [J]. Thin Solid Films,2009,517,5157-5160.
[29] Seung-Ho Hwang, Tae-Hoon Chung and Byung-Teak Lee. Study on the interfacial layer in ZnO/GaNheterostructure light-emitting diode [J]. Materials Science and Engineering B,2009,157,32-35.
[30] Sejoon Lee, Deuk Young Kim. Characteristics of ZnO/GaN heterostructure formed on GaN substrate bysputtering deposition of ZnO [J]. Materials Science and Engineering B,2007,137,80-84.
[31] H. Y. Yang, S. F. Yu, H. K. Liang, S. P. Lau, S. S. Pramana, C. Ferraris, C. W. Cheng and H. J. Fan.Ultraviolet Electroluminescence from Randomly Assembled n-SnO2Nanowires/p-GaN:MgHeterojunction [J]. ACS Applied Materials and Interfaces,2010,2,1191-1194.
[32] Shizuo, Fujita. Ultraviolet optical functions of ZnO and Ga2O3thin films [J]. Proceedings of the SPIE,2008,7041,70410M-14.
[33] S. Gowtham, Mrinalini Deshpande, Aurora Costales, Ravindra Pandey. Structural, Energetic, Electronic,Bonding, and Vibrational Properties of Ga3O, Ga3O2, Ga3O3, Ga2O3, and GaO3Clusters [J]. J. Phys. Chem.B,2005,109,14836-14844.
[34] A. Janotti, C. G. Van de Walle. Native point defects in ZnO [J]. Phys. Rev. B,2007,76,165202-165223.
[35] Won Suk Han, Young Yi Kim, Bo Hyun Kong, Hyung Koun Cho, Ultraviolet light emitting diode withn-ZnO:Ga/i-ZnO/p-GaN:Mg heterojunction [J]. Thin Solid Films,2009,517,5106-5109.
[36] Y.T. Shih, M.K. Wu, M.J. Chen, Y.C. Cheng, J.R. Yang, M. Shiojiri. ZnO-based heterojunctionlight-emitting diodes on p-SiC(4H) grown by atomic layer deposition [J]. Appl Phys B,2010,98,767-772.
[1]张跃.一维氧化锌纳米材料[M].北京:科学出版社，2010，1-5.
[2] C. J. Lee, T. J. Lee, S. C. Lyu, Y. Zhang, H. Ruh, H. J. Lee. Field emission from well-aligned zinc oxidenanowires grown at low temperature [J]. Appl. Phys. Lett.,2002,81,3648-3650.
[3] Q. Wan, Q. H. Li, Y. J. Chen, T. H. Wang, X. L. He, J. P. Li, C. L. Lin. Fabrication and ethanol sensingcharacteristics of ZnO nanowire gas sensors [J]. Appl. Phys. Lett.,2004,84,3654-3656.
[4] Yun-Ju Lee, Douglas S. Ruby, David W. Peters. ZnO Nanostructures as Efficient Antireflection Layers inSolar Cells [J]. Nanoletters,2008,8(5),1501-1505.
[5] Y. Li, G. W. Meng, L. D. Zhang, et al. Ordered semiconductor ZnO nanowire arrays and theirphotoluminescence properties [J]. Appl. Phys. Lett.,2000,76(15),2011-2013.
[6] William L. Hughes, Zhong L. Wang. Controlled synthesis and manipulation of ZnO nanorings andnanobows [J]. Appl. Phys. Lett.,2005,86(4),043106-043109.
[7] J X Wang, X W Sun, Y Yang, H Huang, Y C Lee, O K Tan, L Vayssieres. Hydrothermally grown orientedZnO nanorod arrays for gas sensing applications [J]. Nanotechnology,2006,17,4995-4998.
[8] Y. J. Xing, Z. H. Xi, Z. Q. Xue, et al. Optical properties of the ZnO nanotubes synthesized via vapor phasegrowth [J]. Appl. Phys. Lett.,2003,83(9),1689-1691.
[9] Chang Shi Lao, Jin Liu, Puxian Gao, et al. ZnO Nanobelt/Nanowire Schottky Diodes Formed byDielectrophoresis Alignment across Au Electrodes [J]. Nano Lett.,2006,6(2),263-266.
[10] Chun-Yi Wu, Hsu-Cheng Hsu, Hsin-Min Cheng, et al. Structural and optical properties of ZnO nanosaws[J]. Journal of Crystal Growth,2006,287(1),189-193.
[11] Zhengmao Yin, Xiaoyan Liu, Yongzhong Wu, Xiaopeng Hao, Xiangang Xu. Enhancement of lightextraction in GaN-based light-emitting diodes using rough beveled ZnO nanocone arrays [J]. OPTICSEXPRESS,2012,20,1013-1021.
[12] Kyoung-Kook Kim, Sam-dong Lee, Hyunsoo Kim,1Jae-Chul Park, Sung-Nam Lee, Youngsoo Park,Seong-Ju Park, Sang-Woo Kim. Enhanced light extraction effciency of GaN-based light-emitting diodeswith ZnO nanorod arrays grown using aqueous solution [J]. Appl. Phys. Lett.,2009,94,071118(1-3).
[13] Sung Jin An, Jee Hae Chae, Gyu-Chul Yi, Gil H. Park. Enhanced light output of GaN-basedlight-emitting diodes with ZnO nanorod arrays [J]. Appl. Phys. Lett.,2008,92,121108(1-3).
[14] Lichun Zhang, Qingshan Li, Yanfeng Dong, Ruizhi Huang,Zhongjun Zhang, Fengzhou Zhao.Electroluminescence from ZnO nanorod/unetched GaN LED wafers under forward and reverse biases [J].J. Opt.,2012,14125601(1-6).
[15] Sung Jin An. Transparent conducting ZnO nanorods for nanoelectrodes as a reverse tunnel junction ofGaN light emitting diode applications [J]. Appl. Phys. Lett.,2012,100,223115(1-5).
[16] M Willander, O Nur, Q X Zhao, et al. Zinc oxide nanorod based photonic devices: recent progress ingrowth, light emitting diodes and lasers [J]. Nanotechnology,2009,20,332001(1-40).
[17] W.I. Park, G.-C. Yi. Electroluminescence in n-ZnO nanorod arrays vertically grown on p-GaN [J].Advanced Materials,2004,16,87-90.
[18] Fang Fang, Dongxu Zhao, Binghui Li, Zhenzhong Zhang, Dezhen Shen. Hydrogen effects on theelectroluminescence of n-ZnO nanorod/p-GaN film heterojunction light-emitting diodes [J]. Phys. Chem.Chem. Phys.,2010,12(25),6759-6762.
[19] Sam-Dong Lee, Yoon-Seok Kim, Min-Su Yi, Jae-Young Choi, Sang-Woo Kim. Morphology Control andElectroluminescence of ZnO Nanorod/GaN Heterojunctions Prepared Using Aqueous Solution [J]. J. Phys.Chem. C,2009,113,8954–8958.
[20] S. JHA, C.D. WANG, C.Y. LUAN, C.P. LIU, H. BIN, O. KUTSAY, I. BELLO, J.A. ZAPIEN, W.J.ZHANG, S.T. LEE. Near-Ultraviolet Light-Emitting Devices Using Vertical ZnO Nanorod Arrays [J].Journal of electronic materials,2012,41(5),853-856.
[21] S. G. Zhang, X. W. Zhang, F. T. Si, J. J. Dong, J. X. Wang, X. Liu, Z. G. Yin, H. L. Gao. Ordered ZnOnanorods-based heterojunction light-emitting diodes with graphene current spreading layer [J]. Appl. Phys.Lett.,2012,101,121104(1-4).
[22] A.M.C. Ng, X.Y. Chen, F. Fang, Y.F. Hsu, A.B. Djuri i′c, C.C. Ling, H.L. Tam, K.W. Cheah, P.W.K.Fong, H.F. Lui, C. Surya, W.K. Chan. Solution-based growth of ZnO nanorods for light-emitting devices:hydrothermal vs. electrodeposition [J]. Appl Phys B,2010,100,851-858.
[23] Xinyi Chen, Alan Man Ching Ng, Fang Fang, Yip Hang Ng, Aleksandra B Djurisˇic′, Hoi Lam Tam, KokWai Cheah, Shangjr Gwo, Wai Kin Chan, Patrick Wai Keung Fong, Hsian Fei Lui, Charles Surya. ZnOnanorod/GaN light-emitting diodes: The origin of yellow and violet emission bands under reverse andforward bias [J]. J. Appl. Phys.,2011,110(9),094513(1-12).
[24] Shrawan Kumar Jha, Chunyan Luan, Chap Hang To, Oleksandr Kutsay, Jaroslav Kov ac, Jr., JuanAntonio Zapien, Igor Bello, Shuit-Tong Lee. ZnO-nanorod-array/p-GaN high-performance ultra-violetlight emitting devices prepared by simple solution synthesis [J]. Appl. Phys. Lett.,2012,101,211116(1-4).
[25] Shrawan Jha, Jin-Cheng Qian, Oleksandr Kutsay, Jaroslav Kovac Jr, Chun-Yan Luan, Juan AntonioZapien, Wenjun Zhang, Shuit-Tong Lee, Igor Bello. Violet-blue LEDs based on p-GaN/n-ZnO nanorodsand their stability [J]. Nanotechnology,2011,22(24),245202(1-8).
[26] A M C Ng, Y Y Xi, Y F Hsu, A B Djuriˇsi′c, W KChan, S Gwo, H L Tam, K W Cheah, P W K Fon, H FLui, C Surya. GaN/ZnO nanorod light emitting diodes with different emission spectra [J].Nanotechnology,2009,20(44),445201(1-8).
[27] J. J. Dong, X. W. Zhang, Z. G. Yin, J. X. Wang, S. G. Zhang, F. T. Si, H. L. Gao, X. Liu, Ultravioletelectroluminescence from ordered ZnO nanorod array/p-GaN light emitting diodes [J]. Applied PhysicsLetters,2012,100,171109(1-3).
[28] S.K. Jha, O. Kutsay, I. Bello n, S.T. Lee. ZnO nanorod based low turn-on voltage LEDs with wideelectroluminescence spectra [J]. Journal of Luminescence,2013,133,222-225.
[29] S. Kishwar, K. ul Hasan, N.H. Alvi, P. Klason, O. Nur, M. Willander. A comparative study of theelectrodeposition and the aqueous chemical growth techniques for the utilization of ZnO nanorods onp-GaN for white light emitting diodes [J]. Superlattices and Microstructures,2011,49,32-42.
[30] X. H. Wang, H. Q. Jia, L. W. Guo, Z. G. Xing, Y. Wang, X. J. Pei, J. M. Zhou, H. Chen. Whitelight-emitting diodes based on a single InGaN emission layer [J]. Appl. Phys. Lett.,2007,91,161912(1-3).
[31] S. Kishwar, K. ul Hasan, G. Tzamalis, O. Nur, M. Willander, H. S. Kwack, D. Le Si Dang. Electro-opticaland cathodoluminescence properties of low temperature grown ZnO nanorods/p-GaN white light emittingdiodes [J]. Phys. Status Solidi A,2009,207,1-6.
[32] J. R. Sadaf, M. Q. Israr, S. Kishwar, O. Nur, M. Willander. White Electroluminescence Using ZnONanotubes/GaN Heterostructure Light-Emitting Diode [J]. Nanoscale Res Lett.,2010,5,957-960.
[33] N.H. Alvi, S.M. Usman Ali, S. Hussain, O. Nur and M. Willander. Fabrication and comparative opticalcharacterization of n-ZnO nanostructures (nanowalls, nanorods, nanofowers and nanotubes)/p-GaNwhite-light-emitting diodes [J]. Scripta Materialia,2011,64,697-700.
[34] Seung-Ho Hwang, Tae-Hoon Chung and Byung-Teak Lee. Study on the interfacial layer in ZnO/GaNheterostructure light-emitting diode [J]. Materials Science and Engineering B,2009,157,32-35.
[35] Sejoon Lee, Deuk Young Kim. Characteristics of ZnO/GaN heterostructure formed on GaN substrate bysputtering deposition of ZnO [J]. Materials Science and Engineering B,2007,137,80-84.
[36]叶良修.半导体物理学[M].北京：高等教育出版社，2007,332-336.
[37] Grundmann M. The Physics of Semiconductors: An Introduction Including Devices and Nanophysics2ndedn [M]. Heidelberg: Springer,2010,760-762.
[38] Chen H C, Chen M J, Huang Y H, Sun W C, Li W C, Yang J R, Kuan H and Shiojiri M. White-lightelectroluminescence from n-ZnO/p-GaN heterojunction light-emitting diodes at reverse breakdown biasIEEE Trans. Electron Devices,2011,58,3970(1-5).
[39] Sadaf J R, Israr M Q, Kishwar S, Nur O, Willander M. Forward-and reverse-biased electroluminescencebehavior of chemically fabricated ZnO nanotubes/GaN interface Semicond. Sci. Technol.,2011,26,075003(1-6).
[40] G. Y. Zhu, C. X. Xu, Y. Lin, Z. L. Shi, J. T. Li, T. Ding, Z. S. Tian, G. F. Chen. Ultravioletelectroluminescence from horizontal ZnO microrods/GaN heterojunction light-emitting diode array [J].Appl. Phys. Lett.,2012,101,041110(1-4).
[41] Sheng Xu, Chen Xu, Ying Liu, Youfan Hu, Rusen Yang, Qing Yang, Jae-Hyun Ryou, Hee Jin Kim,Zachary Lochner, Suk Choi, Russell Dupuis, Zhong Lin Wang. Ordered Nanowire Array Blue/Near-UVLight Emitting Diodes [J]. Adv. Mater.,2010,22,4749-4753.
[42] A. Janotti, C. G. Van de Walle. Native point defects in ZnO [J]. Phys. Rev. B,2007,76,165202-165223.
[43] Zhen Guo, Hong Zhang, Dongxu Zhao, Yichun Liu, Bin Yao, Binghui Li, Zhenzhong Zhang, DezhenShen. The ultralow driven current ultraviolet-blue light-emitting diode based on n-ZnOnanowires/i-polymer/p-GaN heterojunction [J]. Appl. Phys. Lett.,2010,97,173508(1-3).
[44] N.H. Alvi, M. Willander, O. Nur. The effect of the post-growth annealing on the electroluminescenceproperties of n-ZnO nanorods/p-GaN light emitting diodes [J]. Superlattices and Microstructures,2010,47,754-761.