4H-SiC功率肖特基势垒二极管（SBD）和结型势垒肖特基（JBS）二极管的研究
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摘要
碳化硅（SiC）由于具有禁带宽度大、临界位移能高、热导率高等优点而成为制作高温、高频、大功率和抗辐射器件极具潜力的宽带隙半导体材料。在功率系统中，一个良好的整流器件应具有较小的导通电阻、较低的泄漏电流、较高的击穿电压以及较快的开关速度等特性，因此SiC功率肖特基势垒二极管（SBD）和结型势垒肖特基（JBS）二极管就成为了很具潜力的应用器件类型。国外对于SiCSBD和JBS二极管已经有了诸多报道，并且在近些年来取得了长足的发展，而国内对于SiC功率器件制作的报道相对较少。虽然SiC材料和工艺都取得了一定的进步，但是由于SiC材料的特殊性，在SiC器件制作工艺方面仍然存在诸多不足。本文主要在以下几个方面对4H-SiC功率SBD和JBS二极管的设计、仿真和制作做出了针对性研究：
1.理论分析了4H-SiC功率SBD和JBS二极管的器件特性和工作特点，建立合适的理论模型，通过ISE-TCAD软件进行器件特性的仿真，并分析了器件结构中的关键参数对于器件特性的影响。
2.对SiC器件制作过程中的关键工艺进行了分析和研究。通过LPCVD非故意掺杂生长得到了质量良好的4H-SiC N-同质外延层：原子力显微镜(AFM)测试得到其平均面粗糙度(Ra)为0.64nm，均方根粗糙度(RMS)测试结果为0.78nm；傅里叶红外线光谱分析(FTIR)测试得到其平均厚度为10μm；次级离子质谱法(SIMS)测试得到其掺杂浓度为1015cm-3量级。另外还通过Trim软件仿真和实验SIMS测试结果的对比分析，研究了离子注入的剂量、能量的选定，获得了选择性掺杂的工艺条件。对离子激活退火的保护也通过碳膜掩蔽的方法有效控制了高温退火导致的Si升华问题，通过碳膜保护退火获得的表面RMS测试结果为7.03nm，对于未作保护的RMS为54.77nm的表面有显著提高。
3.仿真研究了采用场限环终端的JBS二极管器件特性，并流片制作了采用场限环终端的SBD和JBS二极管。通过两种区别工艺制作P型欧姆接触，即独立制作P型欧姆接触金属及退火和一次完成正电极与欧姆接触制作的工艺，对比了两种工艺条件下的器件直流特性，分析了工艺过程对于器件特性的影响。
4.针对场限环终端对于表面电荷敏感的缺陷提出了在4H-SiC SBD和JBS二极管中引入偏移场板终端。通过仿真和理论分析详细研究了氧化层中电荷对于器件反向特性的影响，同时确定了结构参数。通过实验流片制作偏移场板终端的SBD和JBS器件，并通过直流特性测试、开关特性测试、以及变温测试等方法详细研究分析了器件特性。通过采用B离子和Al离子共同注入的方法制作P+结，在获得较大结深的同时能够有效减小反向恢复时间，常温下得到了反向恢复时间仅为44ns的4H-SiC JBS二极管。同时变温条件下的测试也证明了4H-SiC整流器在高达300C的条件下仍具有优越直流特性和开关特性。
5.针对离子注入工艺和离子激活退火工艺对于器件特性的影响，进行了浮金属场环终端的4H-SiC SBD的流片实验，并分析了Ti和Ni两种金属所形成的肖特基势垒情况。采用Ti制作的SBD在4.4V正向偏压下达到了1600A/cm~2的电流密度，而采用Ni制作的SBD在反向偏压200V下获得了小于10-7A/cm~2的反向漏电流，还获得了击穿电压达到850V的4H-SiC SBD。另外详细研究了结终端扩展JTE对于提高4H-SiC SBD器件特性的作用，通过仿真分析了JTE关键参数对于反向击穿电压、表面电场分布的影响，给出了JTE的设计要点和优化参数。在流片实验中测得了击穿电压达到950V的JTE终端的4H-SiC SBD，正向电流密度在5V时为803A/cm~2。
Silicon Carbide (SiC) has received a substantial increase in research interest due toits wide band gap, high critical field strength, high radiation tolerance and excellentthermal conductivity. SiC-based devices are deemed as a candidate to replace Si-baseddevices in applications of high temperature, high power, and high radiation hardness. Ina power system, a well-built rectifier shall have low conduct resistance, low reverseleakage current, high breakdown voltage and fast switching speed, making SiC acandidate for high-performance Schottky barrier (SBD) and junction barrier Schottky(JBS) diodes. SiC SBDs have been studied and reported worldwide, but the nationalreports, especially those about fabrication, are relatively limited. Though the materialquality and techniques have been improved enormously, there are still many problemsleft to be studied and improved. In this work,4H-SiC SBD and JBS diodes have beenthus designed, fabricated and characterized, the main work including:
1. The characteristics of4H-SiC SBD and JBS diode were simulated and analyzed.Suitable models were built based on the performance of the devices, and the simulationusing ISE-TCAD was carried out to understand the influence of the structure on thecharacteristics of devices.
2. The key techniques in manufacturing SiC devices were analyzed. N-epilayerswere grown on the4H-SiC substrate by LPCVD and characterized using FTIR, SIMS,and AFM. Furthermore, Trim was used for the simulation to determine the dosage andenergy for selective doping with ion-implantation, and the simulated results werecompared with the empirical findings. Finally, a study on active annealing was carriedout; and results showed that masking by carbon film effectively protects the surface ofthe wafer during annealing.
3. A JBS diode terminated by field guarding ring (FGR) was simulated, and bothSBD and JBS diode using FGR were fabricated. Two different techniques wereemployed in fabricating the P-type Ohmic contact: independent metal deposition andannealing, and simultaneous fabrication of the Schottky contact and ohmic contact. TheDC characteristics of devices produced by these two methods were compared tounderstand the difference between those two techniques.
4. Directed towards the sensitivity of the devices on the charges in the oxidationlayer, the offset field-plate (offset-FP) was employed as the edge termination of SBD and JBS diode. With stimulation and theoretical analyses, effects of the charges in oxidelayer were studied, and the structure were determined thereby. The devices werecharacterized by DC and switching tests; all these tests were also carried out in a variedtemperature to show the temperature dependence of the devices’ performances. Thereverse recovery characteristics show that with B and Al ion co-implantation, therecovery time of a4H-SiC JBS is remarkably reduced to44ns at room temperature.
5. A Floating metal ring (FMR) was fabricated as the edge termination for4H-SiCSBD to avoid ion-implantation and activating annealing. Ti and Ni were employed toform the Schottky contact. Using Ti contacts, SBD reached a forward current density of1600A/cm~2when forward voltage is4.4V. Meanwhile, Ni contacts formed a higherSchottky barrier height, yielding SBDs with lower reverse current density, which islower then10-7A/cm~2within200V, and4H-SiC SBD breakdown voltages of850V wereachieved. Furthermore, junction termination extension (JTE) was also simulated instudy of SBD to find suitable parameters of structure. In the experiment, a4H-SiC SBDterminated by JTE with breakdown votage of950V is achieved; the forward currentdensity of which is803A/cm~2at5V.
1.理论分析了4H-SiC功率SBD和JBS二极管的器件特性和工作特点，建立合适的理论模型，通过ISE-TCAD软件进行器件特性的仿真，并分析了器件结构中的关键参数对于器件特性的影响。
2.对SiC器件制作过程中的关键工艺进行了分析和研究。通过LPCVD非故意掺杂生长得到了质量良好的4H-SiC N-同质外延层：原子力显微镜(AFM)测试得到其平均面粗糙度(Ra)为0.64nm，均方根粗糙度(RMS)测试结果为0.78nm；傅里叶红外线光谱分析(FTIR)测试得到其平均厚度为10μm；次级离子质谱法(SIMS)测试得到其掺杂浓度为1015cm-3量级。另外还通过Trim软件仿真和实验SIMS测试结果的对比分析，研究了离子注入的剂量、能量的选定，获得了选择性掺杂的工艺条件。对离子激活退火的保护也通过碳膜掩蔽的方法有效控制了高温退火导致的Si升华问题，通过碳膜保护退火获得的表面RMS测试结果为7.03nm，对于未作保护的RMS为54.77nm的表面有显著提高。
3.仿真研究了采用场限环终端的JBS二极管器件特性，并流片制作了采用场限环终端的SBD和JBS二极管。通过两种区别工艺制作P型欧姆接触，即独立制作P型欧姆接触金属及退火和一次完成正电极与欧姆接触制作的工艺，对比了两种工艺条件下的器件直流特性，分析了工艺过程对于器件特性的影响。
4.针对场限环终端对于表面电荷敏感的缺陷提出了在4H-SiC SBD和JBS二极管中引入偏移场板终端。通过仿真和理论分析详细研究了氧化层中电荷对于器件反向特性的影响，同时确定了结构参数。通过实验流片制作偏移场板终端的SBD和JBS器件，并通过直流特性测试、开关特性测试、以及变温测试等方法详细研究分析了器件特性。通过采用B离子和Al离子共同注入的方法制作P+结，在获得较大结深的同时能够有效减小反向恢复时间，常温下得到了反向恢复时间仅为44ns的4H-SiC JBS二极管。同时变温条件下的测试也证明了4H-SiC整流器在高达300C的条件下仍具有优越直流特性和开关特性。
5.针对离子注入工艺和离子激活退火工艺对于器件特性的影响，进行了浮金属场环终端的4H-SiC SBD的流片实验，并分析了Ti和Ni两种金属所形成的肖特基势垒情况。采用Ti制作的SBD在4.4V正向偏压下达到了1600A/cm~2的电流密度，而采用Ni制作的SBD在反向偏压200V下获得了小于10-7A/cm~2的反向漏电流，还获得了击穿电压达到850V的4H-SiC SBD。另外详细研究了结终端扩展JTE对于提高4H-SiC SBD器件特性的作用，通过仿真分析了JTE关键参数对于反向击穿电压、表面电场分布的影响，给出了JTE的设计要点和优化参数。在流片实验中测得了击穿电压达到950V的JTE终端的4H-SiC SBD，正向电流密度在5V时为803A/cm~2。
Silicon Carbide (SiC) has received a substantial increase in research interest due toits wide band gap, high critical field strength, high radiation tolerance and excellentthermal conductivity. SiC-based devices are deemed as a candidate to replace Si-baseddevices in applications of high temperature, high power, and high radiation hardness. Ina power system, a well-built rectifier shall have low conduct resistance, low reverseleakage current, high breakdown voltage and fast switching speed, making SiC acandidate for high-performance Schottky barrier (SBD) and junction barrier Schottky(JBS) diodes. SiC SBDs have been studied and reported worldwide, but the nationalreports, especially those about fabrication, are relatively limited. Though the materialquality and techniques have been improved enormously, there are still many problemsleft to be studied and improved. In this work,4H-SiC SBD and JBS diodes have beenthus designed, fabricated and characterized, the main work including:
1. The characteristics of4H-SiC SBD and JBS diode were simulated and analyzed.Suitable models were built based on the performance of the devices, and the simulationusing ISE-TCAD was carried out to understand the influence of the structure on thecharacteristics of devices.
2. The key techniques in manufacturing SiC devices were analyzed. N-epilayerswere grown on the4H-SiC substrate by LPCVD and characterized using FTIR, SIMS,and AFM. Furthermore, Trim was used for the simulation to determine the dosage andenergy for selective doping with ion-implantation, and the simulated results werecompared with the empirical findings. Finally, a study on active annealing was carriedout; and results showed that masking by carbon film effectively protects the surface ofthe wafer during annealing.
3. A JBS diode terminated by field guarding ring (FGR) was simulated, and bothSBD and JBS diode using FGR were fabricated. Two different techniques wereemployed in fabricating the P-type Ohmic contact: independent metal deposition andannealing, and simultaneous fabrication of the Schottky contact and ohmic contact. TheDC characteristics of devices produced by these two methods were compared tounderstand the difference between those two techniques.
4. Directed towards the sensitivity of the devices on the charges in the oxidationlayer, the offset field-plate (offset-FP) was employed as the edge termination of SBD and JBS diode. With stimulation and theoretical analyses, effects of the charges in oxidelayer were studied, and the structure were determined thereby. The devices werecharacterized by DC and switching tests; all these tests were also carried out in a variedtemperature to show the temperature dependence of the devices’ performances. Thereverse recovery characteristics show that with B and Al ion co-implantation, therecovery time of a4H-SiC JBS is remarkably reduced to44ns at room temperature.
5. A Floating metal ring (FMR) was fabricated as the edge termination for4H-SiCSBD to avoid ion-implantation and activating annealing. Ti and Ni were employed toform the Schottky contact. Using Ti contacts, SBD reached a forward current density of1600A/cm~2when forward voltage is4.4V. Meanwhile, Ni contacts formed a higherSchottky barrier height, yielding SBDs with lower reverse current density, which islower then10-7A/cm~2within200V, and4H-SiC SBD breakdown voltages of850V wereachieved. Furthermore, junction termination extension (JTE) was also simulated instudy of SBD to find suitable parameters of structure. In the experiment, a4H-SiC SBDterminated by JTE with breakdown votage of950V is achieved; the forward currentdensity of which is803A/cm~2at5V.
引文
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