基于双极光栅管的CMOS图像传感器读出电路的研究
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摘要
概述了国内外CMOS图像传感器发展历史、现状和趋势,比较了CMOS图像传感器与CCD图像传感器的性能特点,指出了本课题的研究意义。在介绍半导体光电知识的基础上,深入探讨了用于CMOS图像传感器的半导体光电二极管和双极光栅晶体管的光电转换特性,指出了影响光电二极管光电特性的因素和提高光电二极管特性的方法,建立了新型光电器件——双极光栅晶体管的等效电路模型,利用电子电路仿真软件PSPICE对其光电特性进行了模拟,由于引入P~+N注入结,双极光栅晶体管的光响应特性优于传统光栅晶体管,随着入射光功率的增加,其光电流成指数关系增加。介绍了CMOS图像像素采集单元的各种电路形式,提出了针对双极光栅晶体管的新型像素单元电路并对其噪声特性进行了分析。通过在每列总线上增加两个晶体管,使之与像素内的行选通晶体管和源跟随晶体管形成一个输入输出短接的差动放大器,提高了像素内的光电转换增益。相关双取样电路中,用单位增益采样器代替PMOS列选电路,不但克服了开关晶体管的非理想效应,而且进一步提高了系统的光电转换增益,并设计了一个用于将信号送入模数转换器的列输出缓冲器。设计了一个适合应用于CMOS图像传感器的列并行8位低功耗模数转换器,该转换器采用逐次逼近型结构,量化速度为1M,信噪比为42dB,微分非线性度和积分非线性度分别为0.5LSB和1LSB。电压比较器采用完全差分三级结构,第一、二级为预放大级,第三级为放大级,数模转换器采用电荷定标,并且采用新型的电容分布形式,大大减少了单位电容的使用量,逐次逼近寄存器采用最少的逻辑单元完成,所有这些措施使得系统的功耗大大降低,仅为350μW。本设计有利于降低CMOS图像传感器整体电路的功耗,避免了由于局部电路功耗过大而使芯片局部过热影响图像触感器的性能,使芯片的功耗、噪声、面积、速度达到一个很好折衷。
In this paper, the developing history, present situation and trends of CMOS image sensor inside and outside of China were summarized. The characteristics between CMOS image sensor and CCD image sensor were compared and the research meaning was pointed out. On the basis of introducing semiconductor photoelectric effect, the light-transfer characteristics of photodiode and photogate transistor used in CMOS image sensor were deeply discussed, the factors affecting the light-transfer characteristics of photodiode and the methods increasing the light-transfer characteristics of photodiode were analyzed. The equivalent circuit model of new photoconducting device—bipolar junction photogate transistor (BJPHGT) was proposed, by utilizing electronic circuit simulation software PSPICE, the current-illumination characteristics of BJPHGT were simulated. Due to the introduced P+N injection junction, the photoresponse characteristic of BJPHGT is better than that of traditional photogate transistor. The photocurrent density increases exponentially with the incident light power. After every kind of pixel unit circuit was introduced, the new pixel unit circuit for BJPHGT was brought forward and its noisiness was analyzed. By means of adding two transistors in each column bus, making them form a short-circuit differential amplifier with source follower transistor and row switch transistor inside of pixel, the photoelectric conversion gain is increased by this method. In the correlated double sample circuit, by substituting unity gain sampler for PMOS column gate, not only the nonideal effect of switch transistor was depressed but also the photoelectric conversion gain was further increased. A column output buffer used to drive large input capacity of analog-digital converter (ADC) and a column parallel, 8-bits resolution, low consumed power successive approximation type ADC for CMOS image sensor were designed. Its sample speed, signal-to-noise ratio, differential and integration nonlinear are 1MS/s, 42dB, 0.5LSB and 1LSB respectively. The comparator was designed to be a fully differential multilevel structure, the first and second level are pre-magnification, and the third one is amplifiers. The charge-scaling digital-analog converter has a new capacity distribution, which make its specific capacitance decrease greatly. The successive approximation register is made up by least logic elements. All these methods leads to very low power consumption which is 350μW.This design have a perfect compromise of power consumption, noise, area and speed and is propitious to reduce the power consumption of CMOS image sensor system, avoid producing hot spot due to high power consumption of the local circuit which damages the performance of CMOS image sensor.
In this paper, the developing history, present situation and trends of CMOS image sensor inside and outside of China were summarized. The characteristics between CMOS image sensor and CCD image sensor were compared and the research meaning was pointed out. On the basis of introducing semiconductor photoelectric effect, the light-transfer characteristics of photodiode and photogate transistor used in CMOS image sensor were deeply discussed, the factors affecting the light-transfer characteristics of photodiode and the methods increasing the light-transfer characteristics of photodiode were analyzed. The equivalent circuit model of new photoconducting device—bipolar junction photogate transistor (BJPHGT) was proposed, by utilizing electronic circuit simulation software PSPICE, the current-illumination characteristics of BJPHGT were simulated. Due to the introduced P+N injection junction, the photoresponse characteristic of BJPHGT is better than that of traditional photogate transistor. The photocurrent density increases exponentially with the incident light power. After every kind of pixel unit circuit was introduced, the new pixel unit circuit for BJPHGT was brought forward and its noisiness was analyzed. By means of adding two transistors in each column bus, making them form a short-circuit differential amplifier with source follower transistor and row switch transistor inside of pixel, the photoelectric conversion gain is increased by this method. In the correlated double sample circuit, by substituting unity gain sampler for PMOS column gate, not only the nonideal effect of switch transistor was depressed but also the photoelectric conversion gain was further increased. A column output buffer used to drive large input capacity of analog-digital converter (ADC) and a column parallel, 8-bits resolution, low consumed power successive approximation type ADC for CMOS image sensor were designed. Its sample speed, signal-to-noise ratio, differential and integration nonlinear are 1MS/s, 42dB, 0.5LSB and 1LSB respectively. The comparator was designed to be a fully differential multilevel structure, the first and second level are pre-magnification, and the third one is amplifiers. The charge-scaling digital-analog converter has a new capacity distribution, which make its specific capacitance decrease greatly. The successive approximation register is made up by least logic elements. All these methods leads to very low power consumption which is 350μW.This design have a perfect compromise of power consumption, noise, area and speed and is propitious to reduce the power consumption of CMOS image sensor system, avoid producing hot spot due to high power consumption of the local circuit which damages the performance of CMOS image sensor.
引文
[1] 林为才,乔彦峰,孙宁.CMOS图像传感器在数码相机上的应用.光机电信息,2002,2002(12):17-20
[2] 王敏,邵喜,赵阿娜.CCD摄像器件的技术特点.东北师大学报(自然科学版)1995,1995(1):66-68
[3] 饶睿坚,来新泉,李玉山.CMOS图像传感芯片的成像技术.微电子学.2001,31(4):272-273
[4] 程开富.CMOS图像传感器的发展现状及关键技求探讨.光机电信息.2001,2001(8):27-34
[5] 许枫,数码相机的眼睛:CCD与CMOS,http://www.demoway.com/002multy07.htm 2003-6-5
[6] 尚玉全,曾云,腾涛等.CMOS图像传感器及其研究.半导体技术.2004,29(8):19-24
[7] 戴劲松.国产数码相.http://www.thethirdmedia.com/pc/200301/20030114107539.htm,2001-4-26
[8] Hong-Song Wong. Technology and Device Scaling Consideratons for CMOS Imagers. IEEE Trans. Electron Devices. 1996, 43 (12): 2131-2141
[9] Zeng Yun(曾云),SHang YuQuan(尚玉全),Yan Min(晏敏)et al. Analysis and Computer Simulation of BJMOSFET Frequency Characteristics. In: IEEE The 5th Conference on ASIC (IEEE Accession number: 7972016). BeiJing, 2003, 1381-1384
[10] 赵瑾娜.CMOS技术前景无限.http://media.ccidnet.com/media/ciw/1023/d0301.htm,2001-5-28
[11] 程开富.CMOS图像传感器技术及市场分析与预测原理及应用.国外电子元器件,2000,2000(4):2-6
[12] 余金中.半导体光电子技术.北京:化学工业出版社,2003,106-119
[13] J.Goy, B.Courtois, J.M.Karam etal. Design of an APS CMOS image sensor for space applications using standard CAD tools and CMOS technology. Proceedings of SPIE. 2000, 40(19): 145-151
[14] 陈中建.红外焦平面新型CMOS读出电路设计研究:[北京大学博士学位论文].北京.北京大学计算机科学技术系,2002,11-14
[15] Ben G. Streetman. Solid state electronic devices. fourth edition. Englewood: prentice-Hall Inc, 1995, 35-40
[16] N.R.Desai, K.V.Hoang and G.J.Sonek. Applications of PSPICE simulation software to the studay of optoelectronic integrated circuits and device. IEEE TRANSACTION ON EDUCATION, 1993, 36(4), 357-361
[17] Adrew J. Blanksby, Marc J. Loinaz, David A. Inglis etal. Noise performance of a color CMOS Stogate image sensor. IEEE IEDM, 1997(7), 1997, 205-207
[18] Zeng Yun, Jin Xiangliang, Yan Yonghong et al. A New Device(BJMOSFET): Numerical Simulation of Current-Voltage Characteristies. 半导体学报,2000,21(11):1069-1074.
[19] Sunetra K. Mendis, Sabrina E. Kemeny, Russell C. Gee et al. CMOS Active Pixel Image Sensors for Highly Integrated Imaging Systems. Journal of Solid-State Circuits, 1997, 32(2): 187-190
[20] 陈维友,杨树人,刘式墉.光电子器件模型与OEIC模拟.北京:国防工业出版社,2001,204-243
[21] R.Dyck, G.Weckler, Integrated array of silicon photodetectors for image sensing, IEEE Transactions on Electron devices, 1968, 15(4): 196-201
[22] P.Noble, self-scaned silicon image detect array, IEEE Transactions on Electron devices, 1968, 15 (4), 202-209
[23] 尤政,李涛.CMOS图像传感器在空间技术中的应用.光学技术,2002,28(1),31-35
[24] 范红.CMOS图像传感器在数码相机中的应用技术的研究:[硕士论文],长春.长春光学精密技术学院,2001,10-12
[25] Sunetra K.Mendis, Sabrina E. Kemeny, Russell C. Gee et al. CMOS Active Pixel Image Sensors For Highly Integrated Imaging Systems. Journal of Solid-State Circuits, 1997, 32(2): 02 187-190
[26] Collins S, Neole J, Marshall G. High gain trimmable logarithmic CMOS pixel, Electronics Letters, 2000, 36(21), 1806-1807
[27] O.Vietze, P.Seitz. Image Sensing with Programmable Offset Pixel for Increased Dynamic Range of more than 150dB, Proc. SPIE, 1996, 2654, 93-98
[28] Zeng Yun, Jin Xiangliang, Yan Yonghong et al. A New Device (BJMOSFET): Numerical Simulation of Current-Voltage Characteristics.半导体学报,2000,21 (11):1069-1074
[29] Degerli Y, Lavernhe F, Magnan P. Band limited 1/f noise source. IEEE Electronics Letters, 35(7), 1999, 521-522
[30] 饶睿坚,韩政.CMOS有源光电传感器像素采集单元成像质量分析.半导体技术,27(11),2002,74-76
[31] Degerli Y, Lavernhe F, Magnan P etal. Analysis and reduction of signal readout circuitry temporal noise in CMOS image sensors for low-light levels IEEE Transactions on Electron Devices, 47(5), 2000, 949-962
[32] M.Tabet. Double sampling techniques for CMOS image sensors: [dissertation]. Ontario: waterloo University 2002, 21-45
[33] 金湘亮,陈杰,仇玉林.一种低功耗低噪声相关双取样电路的研究.电路与系统学报.8(3),2003,23-27
[34] B.J.Sheu and Chenming Hu. Switch-induced Error Voltage on a Switched Capacitor. IEEE Journey of Solid-State Circuits. 19(4), 1984, 519-525
[35] Phillip E. Allen, Douglas R. Holberg. CMOS Analog Circuit Design. Beijing: Publishing House of Electronics Industry, 2002, 439-455
[36] 陈贵灿,程军,张瑞智.模拟CMOS集成电路设计.西安:西安大学出版社,2003,112-120
[37] M.schanz. Linear CMOS image sensors with integrated signal processing: [dissertation]. Duisburg: University of Duisburg, 1998, 55-65
[38] K.Salama, E.Gamal. Analysis of active pixel sensor readout circuit IEEE Transactions on Circuits and Systems, 2003, 50(7), 941-945
[39] P.K.Hanumolu. Design of low noise, low power linear CMOS image sensor: [dissertation]. Worcester: Polytechnic Institute, 2001, 38-41
[40] 斐志军,曹继华.CMOS图像传感器用ADC及其进展.天津职业技术师范学院院.2003,13(3),12-15
[41] U. Ringh, C. Jansson, C. Svensson, and K. Liddiard. CMOS analog to digital conversion for uncooled bolometer infrared detector arrays," in Pro.of SPIE, 1995, 24(10), 65-68
[42] David Yang. Digital pixel CMOS image sensors: [dissertation]. California: Stanford University, 1999, 5-8
[43] D.A. Johns and K. Martin. Analog Integrated Circuit Design. John Wiley and Sons Inc, New York, 1997, 323-356
[44] 鲁靖梅.10位逐次逼近式模数转换器中的数模转,换器实现:[硕士论文]:安徽,合肥工业大学,2004,16—30
[45] 施超.模数转换器硬IP核设计:[硕士论文].陕西,西安电子科技大学,2002,16—27
[46] A.N.Mohieldin, E.S.Sinencio, J.S.Martinez. A Fully Balanced Pseudo-Differential OTAwith Common-Mode Feed-forward and Inherent Common-Mode Feedback Detector. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 38(4), 2003, 471-475
[47] Minsheng Wang, Terry L.Mayhugh, Jr., Sherif et al. Constant- Rail-to-Rail CMOS
[2] 王敏,邵喜,赵阿娜.CCD摄像器件的技术特点.东北师大学报(自然科学版)1995,1995(1):66-68
[3] 饶睿坚,来新泉,李玉山.CMOS图像传感芯片的成像技术.微电子学.2001,31(4):272-273
[4] 程开富.CMOS图像传感器的发展现状及关键技求探讨.光机电信息.2001,2001(8):27-34
[5] 许枫,数码相机的眼睛:CCD与CMOS,http://www.demoway.com/002multy07.htm 2003-6-5
[6] 尚玉全,曾云,腾涛等.CMOS图像传感器及其研究.半导体技术.2004,29(8):19-24
[7] 戴劲松.国产数码相.http://www.thethirdmedia.com/pc/200301/20030114107539.htm,2001-4-26
[8] Hong-Song Wong. Technology and Device Scaling Consideratons for CMOS Imagers. IEEE Trans. Electron Devices. 1996, 43 (12): 2131-2141
[9] Zeng Yun(曾云),SHang YuQuan(尚玉全),Yan Min(晏敏)et al. Analysis and Computer Simulation of BJMOSFET Frequency Characteristics. In: IEEE The 5th Conference on ASIC (IEEE Accession number: 7972016). BeiJing, 2003, 1381-1384
[10] 赵瑾娜.CMOS技术前景无限.http://media.ccidnet.com/media/ciw/1023/d0301.htm,2001-5-28
[11] 程开富.CMOS图像传感器技术及市场分析与预测原理及应用.国外电子元器件,2000,2000(4):2-6
[12] 余金中.半导体光电子技术.北京:化学工业出版社,2003,106-119
[13] J.Goy, B.Courtois, J.M.Karam etal. Design of an APS CMOS image sensor for space applications using standard CAD tools and CMOS technology. Proceedings of SPIE. 2000, 40(19): 145-151
[14] 陈中建.红外焦平面新型CMOS读出电路设计研究:[北京大学博士学位论文].北京.北京大学计算机科学技术系,2002,11-14
[15] Ben G. Streetman. Solid state electronic devices. fourth edition. Englewood: prentice-Hall Inc, 1995, 35-40
[16] N.R.Desai, K.V.Hoang and G.J.Sonek. Applications of PSPICE simulation software to the studay of optoelectronic integrated circuits and device. IEEE TRANSACTION ON EDUCATION, 1993, 36(4), 357-361
[17] Adrew J. Blanksby, Marc J. Loinaz, David A. Inglis etal. Noise performance of a color CMOS Stogate image sensor. IEEE IEDM, 1997(7), 1997, 205-207
[18] Zeng Yun, Jin Xiangliang, Yan Yonghong et al. A New Device(BJMOSFET): Numerical Simulation of Current-Voltage Characteristies. 半导体学报,2000,21(11):1069-1074.
[19] Sunetra K. Mendis, Sabrina E. Kemeny, Russell C. Gee et al. CMOS Active Pixel Image Sensors for Highly Integrated Imaging Systems. Journal of Solid-State Circuits, 1997, 32(2): 187-190
[20] 陈维友,杨树人,刘式墉.光电子器件模型与OEIC模拟.北京:国防工业出版社,2001,204-243
[21] R.Dyck, G.Weckler, Integrated array of silicon photodetectors for image sensing, IEEE Transactions on Electron devices, 1968, 15(4): 196-201
[22] P.Noble, self-scaned silicon image detect array, IEEE Transactions on Electron devices, 1968, 15 (4), 202-209
[23] 尤政,李涛.CMOS图像传感器在空间技术中的应用.光学技术,2002,28(1),31-35
[24] 范红.CMOS图像传感器在数码相机中的应用技术的研究:[硕士论文],长春.长春光学精密技术学院,2001,10-12
[25] Sunetra K.Mendis, Sabrina E. Kemeny, Russell C. Gee et al. CMOS Active Pixel Image Sensors For Highly Integrated Imaging Systems. Journal of Solid-State Circuits, 1997, 32(2): 02 187-190
[26] Collins S, Neole J, Marshall G. High gain trimmable logarithmic CMOS pixel, Electronics Letters, 2000, 36(21), 1806-1807
[27] O.Vietze, P.Seitz. Image Sensing with Programmable Offset Pixel for Increased Dynamic Range of more than 150dB, Proc. SPIE, 1996, 2654, 93-98
[28] Zeng Yun, Jin Xiangliang, Yan Yonghong et al. A New Device (BJMOSFET): Numerical Simulation of Current-Voltage Characteristics.半导体学报,2000,21 (11):1069-1074
[29] Degerli Y, Lavernhe F, Magnan P. Band limited 1/f noise source. IEEE Electronics Letters, 35(7), 1999, 521-522
[30] 饶睿坚,韩政.CMOS有源光电传感器像素采集单元成像质量分析.半导体技术,27(11),2002,74-76
[31] Degerli Y, Lavernhe F, Magnan P etal. Analysis and reduction of signal readout circuitry temporal noise in CMOS image sensors for low-light levels IEEE Transactions on Electron Devices, 47(5), 2000, 949-962
[32] M.Tabet. Double sampling techniques for CMOS image sensors: [dissertation]. Ontario: waterloo University 2002, 21-45
[33] 金湘亮,陈杰,仇玉林.一种低功耗低噪声相关双取样电路的研究.电路与系统学报.8(3),2003,23-27
[34] B.J.Sheu and Chenming Hu. Switch-induced Error Voltage on a Switched Capacitor. IEEE Journey of Solid-State Circuits. 19(4), 1984, 519-525
[35] Phillip E. Allen, Douglas R. Holberg. CMOS Analog Circuit Design. Beijing: Publishing House of Electronics Industry, 2002, 439-455
[36] 陈贵灿,程军,张瑞智.模拟CMOS集成电路设计.西安:西安大学出版社,2003,112-120
[37] M.schanz. Linear CMOS image sensors with integrated signal processing: [dissertation]. Duisburg: University of Duisburg, 1998, 55-65
[38] K.Salama, E.Gamal. Analysis of active pixel sensor readout circuit IEEE Transactions on Circuits and Systems, 2003, 50(7), 941-945
[39] P.K.Hanumolu. Design of low noise, low power linear CMOS image sensor: [dissertation]. Worcester: Polytechnic Institute, 2001, 38-41
[40] 斐志军,曹继华.CMOS图像传感器用ADC及其进展.天津职业技术师范学院院.2003,13(3),12-15
[41] U. Ringh, C. Jansson, C. Svensson, and K. Liddiard. CMOS analog to digital conversion for uncooled bolometer infrared detector arrays," in Pro.of SPIE, 1995, 24(10), 65-68
[42] David Yang. Digital pixel CMOS image sensors: [dissertation]. California: Stanford University, 1999, 5-8
[43] D.A. Johns and K. Martin. Analog Integrated Circuit Design. John Wiley and Sons Inc, New York, 1997, 323-356
[44] 鲁靖梅.10位逐次逼近式模数转换器中的数模转,换器实现:[硕士论文]:安徽,合肥工业大学,2004,16—30
[45] 施超.模数转换器硬IP核设计:[硕士论文].陕西,西安电子科技大学,2002,16—27
[46] A.N.Mohieldin, E.S.Sinencio, J.S.Martinez. A Fully Balanced Pseudo-Differential OTAwith Common-Mode Feed-forward and Inherent Common-Mode Feedback Detector. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 38(4), 2003, 471-475
[47] Minsheng Wang, Terry L.Mayhugh, Jr., Sherif et al. Constant- Rail-to-Rail CMOS