结合图像分析的四探针测试系统研究
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摘要
四探针测试技术是半导体工业检测电阻率时采用最为广泛的测试手段之一。随着时代的不断进步，半导体产业飞速发展，以单晶硅片为衬底的集成电路集成度越来越高，目前正进入甚大规模集成电路(ULSI)时代，测试在整个集成电路生产过程中的地位越来越重要。许多器件的重要参数与电阻率有关，因此这对晶体电阻率的均匀性，电学特性提出了更为严格的要求，特别是微区的电特性和均匀性引起了人们的广泛关注。在这样的背景下，四探针测试技术需要有新的发展。
目前微区薄层电阻测量存在的问题是依据显微镜视力观察，用手工操作将探针定位于微区图形的阴影区。这样，完成Φ200mm(8时)圆片杂质的扩散分布需要对许多图形进行测试，需要花费很长的时间，当测试Φ300mm硅片时问题就更为突出。本文将图象与视觉测量系统引入四探针测试系统中，对采集到的原始探针图像进行预处理、边缘提取等操作，以便实现探针针尖的识别，然后由电机控制实现探针的自动定位。这样测试系统可以自动获得全片的薄层电阻分布，为超大规模集成电路检测杂质分布和扩散的均匀性提供信息。
本文还利用单片机系统设计了薄层电阻测试电路，对于程序中用到的范德堡隐函数，利用非线性反演和规范化拟合的方法推导出其多项式显函数形式。这不仅给对我们编写程序提供了方便，也为使用范德堡法和Rymaszewski法测量薄层电阻提供了便利。
Four-point probe measurement technique is one of the most extensive means for examining the resistivity in the semiconductor industry.With continuous progress, semiconductor industry develops at a very fast speed,the integration level of IC becomes higher and higher.Presently,the IC production is entering into the age of ULSI, then testings are more and more important. Many important properties of semiconductor devices are relevant with their resistivity,which brings forward strict demands to the uniformity of the resistivity.Especially micro-area's characteristics attract extensive attention.Under this background, four-point probe measurement technique requires a new development.
At present,the problem in testing sheet resistance for micro-areas is that probes must be set up at the suitable locations by handwork.In order to know the wafer's impurity distributing,we need test many times,so will waste a lot of time.If the wafer's diameter would be 300mm,this problem will be more serious.In this paper,image analysis is introduced,through pre-processing and edge picking-up,the probe tips are recognized.Then probe tips will be aligned respectively in two perpendicular directions through driving stepper motors.Thus the distribution of sheet resistance for whole wafer is got by automatic testing and it offers information for detecting the impurity distribution and the diffusion uniformity.
In this paper,the circuit used for testing sheet resistance is designed using single chip processor.Additionally,we have expressed Van der pauw function as a polynomial form through local and global reversal development by using the normalized polynomial match,being convenient not only for programming, but also for sheet resistance testing when using Van der pauw and Rymaszewski methods.
目前微区薄层电阻测量存在的问题是依据显微镜视力观察，用手工操作将探针定位于微区图形的阴影区。这样，完成Φ200mm(8时)圆片杂质的扩散分布需要对许多图形进行测试，需要花费很长的时间，当测试Φ300mm硅片时问题就更为突出。本文将图象与视觉测量系统引入四探针测试系统中，对采集到的原始探针图像进行预处理、边缘提取等操作，以便实现探针针尖的识别，然后由电机控制实现探针的自动定位。这样测试系统可以自动获得全片的薄层电阻分布，为超大规模集成电路检测杂质分布和扩散的均匀性提供信息。
本文还利用单片机系统设计了薄层电阻测试电路，对于程序中用到的范德堡隐函数，利用非线性反演和规范化拟合的方法推导出其多项式显函数形式。这不仅给对我们编写程序提供了方便，也为使用范德堡法和Rymaszewski法测量薄层电阻提供了便利。
Four-point probe measurement technique is one of the most extensive means for examining the resistivity in the semiconductor industry.With continuous progress, semiconductor industry develops at a very fast speed,the integration level of IC becomes higher and higher.Presently,the IC production is entering into the age of ULSI, then testings are more and more important. Many important properties of semiconductor devices are relevant with their resistivity,which brings forward strict demands to the uniformity of the resistivity.Especially micro-area's characteristics attract extensive attention.Under this background, four-point probe measurement technique requires a new development.
At present,the problem in testing sheet resistance for micro-areas is that probes must be set up at the suitable locations by handwork.In order to know the wafer's impurity distributing,we need test many times,so will waste a lot of time.If the wafer's diameter would be 300mm,this problem will be more serious.In this paper,image analysis is introduced,through pre-processing and edge picking-up,the probe tips are recognized.Then probe tips will be aligned respectively in two perpendicular directions through driving stepper motors.Thus the distribution of sheet resistance for whole wafer is got by automatic testing and it offers information for detecting the impurity distribution and the diffusion uniformity.
In this paper,the circuit used for testing sheet resistance is designed using single chip processor.Additionally,we have expressed Van der pauw function as a polynomial form through local and global reversal development by using the normalized polynomial match,being convenient not only for programming, but also for sheet resistance testing when using Van der pauw and Rymaszewski methods.
引文
[1] 吴德馨，钱鹤，叶甜春等．现代微电子技术．化学工业出版社，2002：9-20
[2] P. A. Crossley et al. J. Electronic Materials, 1973, 2(4): 465-483
[3] D. S. Perloff et al., J. Electrochem. Soc. 1977, 124(4): 582-590
[4] 孙以材．半导体测试技术．冶金工业出版社，1984
[5] Beuhler M G, Grant S D, Thurber W R. An experimental study of various cross sheetresistor test structures. J Electrochem Soc, 1978; 125(4): 645～649
[6] David JM, Beuhler M G. A numerical analysis of various cross sheet resistor test structure. Solid-State Electronics, 1978: 539～543
[7] Swartzendruber L J, Four-point Probe Measurement of Nonuniformities in Semiconductor Sheet Resistivity. Solid-State Electronics, 1964, 7: 413-422
[8] Rymaszeuski R. Empirical Method of Calibrating A 4-point Microarry for Measuring Thin-film-sheet Resistance. Electronics Letters. 1962, (3)2: 57-58
[9] 孙以材，石俊生．在矩形样品中Rymaszewski公式的适用条件的分析．物理学报．1995，12：1869-1878
[1O] Van der pauw, A Method of measuring specific resistivity and hall effect of discs of arbitrary shape, J. Philips Researc Reports, 1958, 13(1): 1-9
[11] Sun Yicai, Shi Junsheng, Meng Qinghao. Measurement of sheet resistance of cross microareas using a modified Van der Pauw method. Semiconductor Sci&Tech. 1996; 11: 805～811
[12] 孙以材，张林在，用改进的Van der Pauw法测定方形微区的方块电阻，物理学报．1994．43(4)530-539
[13] 孙以材．图像识别在微区测试四探针定位技术中的应用，河北省自然基金项目申报书，2001年
[14] 章毓晋．图像理解与计算机视觉．清华大学出版社，2000，34-39．
[15] 贾云得．机器视觉．科学出版社，2000，69～80．
[16] Ferry D K, Fannin D R. Physical Electronics, Addison-Wesley Publishing Company, 1971
[17] 南工，西电讯．半导体集成电路，国防工业出版社，1980
[18] 扩散技术，国防工业出版社，1972
[19] 王效平，李威．Si／Sil-xGex异质结双极晶体管发展概况，半导体杂志，1993，18(1)：22-30
[20] 鲍敏抗等，集成传感器，国防工业出版社，1987
[21] 华庆恒，刘春香．半绝缘砷化镓材料质量与器件参数的某些相关性．半导体杂志，1991，16(3)：29-39，53
[22] Valdes L B. Proc. Instn. Radio Engrs. 1954, 42: 420
[23] 吴德馨，钱鹤，叶甜春等．现代微电子技术．化学工业出版社：193-201
[24] 宿昌厚．双位组合四探针法测量硅薄片电阻率如何进行厚度修正．全国半导体集成电路与硅材料学术年会，杭州，1993
[25] 孙以材，范兆书，孙新宇，宁秋凤．电阻率两种测试方法间几何效应修正的相关性．半导体技术，2000，第25卷第5期
[26] 石俊生，孙以材．四探针测试技术中边缘修正的有关方法．半导体杂志，1997，22(1)
[27] 宿昌厚，鲁效明．双电测组合法测试半导体电阻率的研究．半导体学报 2003，3 Vol．24 No．3
[28] Yicai Sun, Jungsheng Shi and Qinghao Meng, Measurement of Sheet Resistance of Cross Microareas Using a Modified van der Pauw. Semi Conductor Sci. & Tech. 1996, 11: 805-811.
[29] Yicai Sun etal. Several Microfigures Suitable to the Measurement of Sheet Resistance for them. Materials and Process Characterization for VLSI国际会议文集，昆明，1994，124-126.
[30] Swartzendruber L J. Solid-State Electron., 1964, 7: 413-422
[31] 王庆有．CCD应用技术．天津大学出版社，1993．
[32] 《Iintel Image Processing Library Reference Manual》 2000. 8
[33] 《Open Source Computer Vision Library Reference Manual》 2001. 12
[34] 章毓晋．图像处理与分析．清华大学出版社：1999
[35] Kenneth R. Castleman(著)，朱志刚等(译)．数字图像处理(Digital Image Processing)．电子工业出版社 2002
[36] 王耀南，李树涛，毛建旭．计算机图像处理与识别技术．高等教育出版社，2001：55-105
[37] L. G. Roberts, Machine Perception of Three-Dimensional Solids, Optical and Electro-Optical Information Processing, MIT Press, Cambridge, MA, 1965
[38] 朱秀昌等．数字图像处理与图像通信．北京邮电大学出版社．2002．2．
[39] 孟庆浩，孙冰．薄层电阻测试Mapping技术．半导体学报．1997．9，Vol．18，No．9：701-705
[40] 张凤言．模拟集成电路应用．中国铁道出版社．1990：103～114。
[41] AD623仪表放大器，武汉力源电子股份有限公司，1999
[42] 张毅刚，修林成，胡振江．MCS-51单片机应用设计．哈尔滨工业大学出版社 1996
[43] 洪志全，洪学海．现代计算机接口技术．电子工业出版社 2000
[44] 徐爱钧，彭秀华．单片机高级语言C51Windows环境编程与应用．电子工业出版社 2001．7
[45] ASTM F76-68, 1971 Annual book. part 8, P652-668
[46] 陈汝全，刘运国．单片机实用技术．电子工业出版社．1992
[47] 何利民主编．单片机应用技术选编(二)．航空航天大学出版社．1994
[48] 胡汉才．单片及原理及其接口技术．清华大学出版社 1995．6
[2] P. A. Crossley et al. J. Electronic Materials, 1973, 2(4): 465-483
[3] D. S. Perloff et al., J. Electrochem. Soc. 1977, 124(4): 582-590
[4] 孙以材．半导体测试技术．冶金工业出版社，1984
[5] Beuhler M G, Grant S D, Thurber W R. An experimental study of various cross sheetresistor test structures. J Electrochem Soc, 1978; 125(4): 645～649
[6] David JM, Beuhler M G. A numerical analysis of various cross sheet resistor test structure. Solid-State Electronics, 1978: 539～543
[7] Swartzendruber L J, Four-point Probe Measurement of Nonuniformities in Semiconductor Sheet Resistivity. Solid-State Electronics, 1964, 7: 413-422
[8] Rymaszeuski R. Empirical Method of Calibrating A 4-point Microarry for Measuring Thin-film-sheet Resistance. Electronics Letters. 1962, (3)2: 57-58
[9] 孙以材，石俊生．在矩形样品中Rymaszewski公式的适用条件的分析．物理学报．1995，12：1869-1878
[1O] Van der pauw, A Method of measuring specific resistivity and hall effect of discs of arbitrary shape, J. Philips Researc Reports, 1958, 13(1): 1-9
[11] Sun Yicai, Shi Junsheng, Meng Qinghao. Measurement of sheet resistance of cross microareas using a modified Van der Pauw method. Semiconductor Sci&Tech. 1996; 11: 805～811
[12] 孙以材，张林在，用改进的Van der Pauw法测定方形微区的方块电阻，物理学报．1994．43(4)530-539
[13] 孙以材．图像识别在微区测试四探针定位技术中的应用，河北省自然基金项目申报书，2001年
[14] 章毓晋．图像理解与计算机视觉．清华大学出版社，2000，34-39．
[15] 贾云得．机器视觉．科学出版社，2000，69～80．
[16] Ferry D K, Fannin D R. Physical Electronics, Addison-Wesley Publishing Company, 1971
[17] 南工，西电讯．半导体集成电路，国防工业出版社，1980
[18] 扩散技术，国防工业出版社，1972
[19] 王效平，李威．Si／Sil-xGex异质结双极晶体管发展概况，半导体杂志，1993，18(1)：22-30
[20] 鲍敏抗等，集成传感器，国防工业出版社，1987
[21] 华庆恒，刘春香．半绝缘砷化镓材料质量与器件参数的某些相关性．半导体杂志，1991，16(3)：29-39，53
[22] Valdes L B. Proc. Instn. Radio Engrs. 1954, 42: 420
[23] 吴德馨，钱鹤，叶甜春等．现代微电子技术．化学工业出版社：193-201
[24] 宿昌厚．双位组合四探针法测量硅薄片电阻率如何进行厚度修正．全国半导体集成电路与硅材料学术年会，杭州，1993
[25] 孙以材，范兆书，孙新宇，宁秋凤．电阻率两种测试方法间几何效应修正的相关性．半导体技术，2000，第25卷第5期
[26] 石俊生，孙以材．四探针测试技术中边缘修正的有关方法．半导体杂志，1997，22(1)
[27] 宿昌厚，鲁效明．双电测组合法测试半导体电阻率的研究．半导体学报 2003，3 Vol．24 No．3
[28] Yicai Sun, Jungsheng Shi and Qinghao Meng, Measurement of Sheet Resistance of Cross Microareas Using a Modified van der Pauw. Semi Conductor Sci. & Tech. 1996, 11: 805-811.
[29] Yicai Sun etal. Several Microfigures Suitable to the Measurement of Sheet Resistance for them. Materials and Process Characterization for VLSI国际会议文集，昆明，1994，124-126.
[30] Swartzendruber L J. Solid-State Electron., 1964, 7: 413-422
[31] 王庆有．CCD应用技术．天津大学出版社，1993．
[32] 《Iintel Image Processing Library Reference Manual》 2000. 8
[33] 《Open Source Computer Vision Library Reference Manual》 2001. 12
[34] 章毓晋．图像处理与分析．清华大学出版社：1999
[35] Kenneth R. Castleman(著)，朱志刚等(译)．数字图像处理(Digital Image Processing)．电子工业出版社 2002
[36] 王耀南，李树涛，毛建旭．计算机图像处理与识别技术．高等教育出版社，2001：55-105
[37] L. G. Roberts, Machine Perception of Three-Dimensional Solids, Optical and Electro-Optical Information Processing, MIT Press, Cambridge, MA, 1965
[38] 朱秀昌等．数字图像处理与图像通信．北京邮电大学出版社．2002．2．
[39] 孟庆浩，孙冰．薄层电阻测试Mapping技术．半导体学报．1997．9，Vol．18，No．9：701-705
[40] 张凤言．模拟集成电路应用．中国铁道出版社．1990：103～114。
[41] AD623仪表放大器，武汉力源电子股份有限公司，1999
[42] 张毅刚，修林成，胡振江．MCS-51单片机应用设计．哈尔滨工业大学出版社 1996
[43] 洪志全，洪学海．现代计算机接口技术．电子工业出版社 2000
[44] 徐爱钧，彭秀华．单片机高级语言C51Windows环境编程与应用．电子工业出版社 2001．7
[45] ASTM F76-68, 1971 Annual book. part 8, P652-668
[46] 陈汝全，刘运国．单片机实用技术．电子工业出版社．1992
[47] 何利民主编．单片机应用技术选编(二)．航空航天大学出版社．1994
[48] 胡汉才．单片及原理及其接口技术．清华大学出版社 1995．6