砷化镓（GaAs）功率放大器的研制
摘要
本论文对GaAs功率器件在雷达系统中的集中式和分布式固态发射机应用做了全面介绍。
通过C波段固态功率放大器设计实例，对GaAs功率器件和微带电路介质载体的选择做了讨论，对GaAs在雷达发射应用中所必须的脉冲调制电源以及偏置电路设计、控制与保护电路、功率分配／合成器设计、功率放大器结构与散热设计等做了详细说明，并给出了典型应用图形。
本论文还提出了一种高效的功率合成网路—波导同轴双模耦合器，并给出了实测结果。该成果在C波段功率放大器的应用中取得满意的效果。
特别是针对功率分配／合成器设计，采用三维电磁场软件仿真设计，从设计到加工测试一次成功，缩短了研制周期。
按照本论文所阐述的设计要点制作的两种C波段固态功率放大器经过电性能测试，环境试验，结果表明满足设计要求。
论文最后还对GaAs微波单片集成电路的制作工艺做了介绍。
In the paper, the applications of GaAs power devices in the integrated and distributedsolid state transmitters of radar systems have been described in details.
In the designing of C band solid state amplifier, the GaAs transistor and microstripsubstrate selection is discussed in the paper. Also, the pulse modulated power source, biascircuit, controlling circuit as well as protection circuit, power combiner, amplifier structureand cooling consideration are explained detailed in this paper.
Also introduces a novel power combiner-waveguide/coaxial dual mode coupler. Thecombiner is satisfied in the C and X band solid state amplifier applications.
By using the three dimension electromagnetic field software in the power divider andcombiner designing, only one process can make a satisfying result. Dramatically reduce thedeveloping period.
The two amplifiers according to the designing method within the paper are passed inthe environment experiment and equiped in the radar systems already.
Finally, the techniques of GaAs MMIC manufacture are mentioned in the paper.
通过C波段固态功率放大器设计实例，对GaAs功率器件和微带电路介质载体的选择做了讨论，对GaAs在雷达发射应用中所必须的脉冲调制电源以及偏置电路设计、控制与保护电路、功率分配／合成器设计、功率放大器结构与散热设计等做了详细说明，并给出了典型应用图形。
本论文还提出了一种高效的功率合成网路—波导同轴双模耦合器，并给出了实测结果。该成果在C波段功率放大器的应用中取得满意的效果。
特别是针对功率分配／合成器设计，采用三维电磁场软件仿真设计，从设计到加工测试一次成功，缩短了研制周期。
按照本论文所阐述的设计要点制作的两种C波段固态功率放大器经过电性能测试，环境试验，结果表明满足设计要求。
论文最后还对GaAs微波单片集成电路的制作工艺做了介绍。
In the paper, the applications of GaAs power devices in the integrated and distributedsolid state transmitters of radar systems have been described in details.
In the designing of C band solid state amplifier, the GaAs transistor and microstripsubstrate selection is discussed in the paper. Also, the pulse modulated power source, biascircuit, controlling circuit as well as protection circuit, power combiner, amplifier structureand cooling consideration are explained detailed in this paper.
Also introduces a novel power combiner-waveguide/coaxial dual mode coupler. Thecombiner is satisfied in the C and X band solid state amplifier applications.
By using the three dimension electromagnetic field software in the power divider andcombiner designing, only one process can make a satisfying result. Dramatically reduce thedeveloping period.
The two amplifiers according to the designing method within the paper are passed inthe environment experiment and equiped in the radar systems already.
Finally, the techniques of GaAs MMIC manufacture are mentioned in the paper.
引文
[1] 张光义．相控阵雷达系统．国防工业出版社，1986
[2] 文剑，曾健平，晏敏．微波功率器件及其材料的发展和应用前景．材料导报．18(2)2004：33-37
[3] Ishida. 400W solid-state power amplifier for C-band satellite communications. International Communications Satellite Systems Conference and Exhibit. 17th 1998:23-27
[4] DREliBrookner，任万霞．新千年的相控阵．空载雷达．2002-4：15-28
[5] 清华大学．微带电路．人民邮电出版社，1975
[6] 郑新等．雷达发射机技术．电子工业出版社，2006
[7] 邢靖等．C 波段固态功放设计和实验研究．现代雷达．2005(6)：59-62
[8] Raymond Basset High-Power GaAs FET Device Bias Considerations. APPLICATION NOTE NUMBER 010. Fujitsu Compound Semiconductor, Inc.
[9] 方佩敏．功率器件的散热计算及散热器选择．世界电子元器件．2002年01期：30-31
[10] 王磊．微波功率场放研制过程中的几个重要问题．电光系统．1995-3：15-19
[11] 林守远．高效功率合成电路及其分析方法．微波学报．1997年02期：103-107
[12] 袁孝康，王仕蹯，朱俊达．微带功率放大器．人民邮电出版社，1982
[13] 党冀萍．微波功率器件及其电路．半导体技术．1994年04期：17-20
[14] A 50 W solid-state C-band amplifier for outdoor use. Microwave Journal. 1998-4: 110-114
[15] Gupta, M. S. Power combining efficiency and its optimisation Microwaves. Antennas and Propagation. 1992:233-238
[16] J.P.Sheilton. IEEE Trans MTT-14, Jan, 1966.
[2] 文剑，曾健平，晏敏．微波功率器件及其材料的发展和应用前景．材料导报．18(2)2004：33-37
[3] Ishida. 400W solid-state power amplifier for C-band satellite communications. International Communications Satellite Systems Conference and Exhibit. 17th 1998:23-27
[4] DREliBrookner，任万霞．新千年的相控阵．空载雷达．2002-4：15-28
[5] 清华大学．微带电路．人民邮电出版社，1975
[6] 郑新等．雷达发射机技术．电子工业出版社，2006
[7] 邢靖等．C 波段固态功放设计和实验研究．现代雷达．2005(6)：59-62
[8] Raymond Basset High-Power GaAs FET Device Bias Considerations. APPLICATION NOTE NUMBER 010. Fujitsu Compound Semiconductor, Inc.
[9] 方佩敏．功率器件的散热计算及散热器选择．世界电子元器件．2002年01期：30-31
[10] 王磊．微波功率场放研制过程中的几个重要问题．电光系统．1995-3：15-19
[11] 林守远．高效功率合成电路及其分析方法．微波学报．1997年02期：103-107
[12] 袁孝康，王仕蹯，朱俊达．微带功率放大器．人民邮电出版社，1982
[13] 党冀萍．微波功率器件及其电路．半导体技术．1994年04期：17-20
[14] A 50 W solid-state C-band amplifier for outdoor use. Microwave Journal. 1998-4: 110-114
[15] Gupta, M. S. Power combining efficiency and its optimisation Microwaves. Antennas and Propagation. 1992:233-238
[16] J.P.Sheilton. IEEE Trans MTT-14, Jan, 1966.