半导体激光器1/f噪声虚拟测试及处理系统
摘要
本文主要介绍了一个半导体激光器1 /f噪声虚拟测试及处理系统,重点在软件部分。首先对半导体激光器的噪声特性进行了综述,介绍了半导体激光器噪声测量的常用方法。然后是该系统的硬件部分,主要是用数据采集卡采集从测试盒中出来的待测信号。着重介绍的是针对1 /f噪声的小波消噪原理,以LabVIEW为平台,调用MATLAB程序进行消噪处理,并给出了消噪前后的对比图。之后,利用LabVIEW设计带小波消噪的虚拟频谱分析仪,对所采集的信号进行消噪和频谱分析,从而对器件的噪声特性进行判断。
本论文的主要成果是实现了从混有白噪声的1 /f噪声中有效的提取出了1 /f噪声,并设计虚拟仪器对其进行处理和分析,充分利用了LabVIEW与MATLAB各自的优势,成本低廉。
With the development of the optoelectronic technique, semiconductor lasers (LDs) are widely used in optical fiber communication, optical sensor, information memory, medical treatment and pumping solid lasers. With the expansion of the excitonic wavelength, Spectral characteristic’s improvement, the reducing of threshold current, the improvement of quantum transfer efficiency, the enhancement of output light power, the improvement of reliability etc, the superiority of the LD is more obvious. As a kind of important light source, the reliability of semiconductor lasers is imperative in all the applications. The study on the reliability of LDs and its regularity is very important to improve their specific property and use them rightly. At present, the usual method of screen is electric aging in which all devices are aged with a constant power or a constant current under high temperature and then the early failed devices are selected. In the aging, the reliable devices are also subject to screening, and the lifetime of devices is affected because of the hot and electric hurt. It can cause batches of devices damage when some accidence happens, for instance, the out of control system or power cut. On the other hand, electric aging is not sensitive for latent defects; for example, some devices after electric aging screening are usually found fail rapidly. Thus, the urgent problems are how to manufacture the high reliable devices, how to analyses the factors, which affect the device reliability, and how to select the unqualified devices with a fast, nondestructive and conveniently method. When LDs work, p-n junction voltage of it will tend to stochastic fluctuation, named electronic noise. Electric noise indicates the defect of material and
本论文的主要成果是实现了从混有白噪声的1 /f噪声中有效的提取出了1 /f噪声,并设计虚拟仪器对其进行处理和分析,充分利用了LabVIEW与MATLAB各自的优势,成本低廉。
With the development of the optoelectronic technique, semiconductor lasers (LDs) are widely used in optical fiber communication, optical sensor, information memory, medical treatment and pumping solid lasers. With the expansion of the excitonic wavelength, Spectral characteristic’s improvement, the reducing of threshold current, the improvement of quantum transfer efficiency, the enhancement of output light power, the improvement of reliability etc, the superiority of the LD is more obvious. As a kind of important light source, the reliability of semiconductor lasers is imperative in all the applications. The study on the reliability of LDs and its regularity is very important to improve their specific property and use them rightly. At present, the usual method of screen is electric aging in which all devices are aged with a constant power or a constant current under high temperature and then the early failed devices are selected. In the aging, the reliable devices are also subject to screening, and the lifetime of devices is affected because of the hot and electric hurt. It can cause batches of devices damage when some accidence happens, for instance, the out of control system or power cut. On the other hand, electric aging is not sensitive for latent defects; for example, some devices after electric aging screening are usually found fail rapidly. Thus, the urgent problems are how to manufacture the high reliable devices, how to analyses the factors, which affect the device reliability, and how to select the unqualified devices with a fast, nondestructive and conveniently method. When LDs work, p-n junction voltage of it will tend to stochastic fluctuation, named electronic noise. Electric noise indicates the defect of material and
引文
[1] J.Morgan, J.Horrison, S.R.Adods etc. Low-frequency Electrical Noise characteristics of Broad Area 808nm semiconductor Laser Diodes. Conference proceeding Leos'97,10th Annual meeting.
[2] Gisela Hartler, Ute Golze, Katrain paschke. Extended noise analysis-a novel tool for reliability screening. Microelectronics Reliablity,1998,38: 1159-1198.
[3] X.Y. Chen, A. Pedersen,O.G. Helleso etc. Electrical noise of laser diodes measured over a wide range of bias currents. Microelectronics Reliability,2000, 40:1925-1928.
[4] Tenchio G.. Low-frequency Intensity Fluctuation of CW DH GaAlAs Diode Lasers. Electronics letters,1976, 12(21):562-563.
[5] P.A.Andrekson, P.Andersson, A.Alping. Electrical Noise Measurement on Laser Diodes for Monitoring of optical Feedback and Mode Hopping. Electron.lett,1986,22:195-196.
[6] Hu Guijun, Shi Jiawei, Zhang Sumei etc. The low-frequency electrical noise as reliability estimation for high-power semiconductor lasers. Optical and Quantum Electronics,2002 ,34(10):987-992.
[7] Shi Jia Wei, Jin EnSun, Ma Jing etc. An Improved Approach an Experimental Results of A low-frequency Noise Measurement Technique used for Reliability Estimation of Diode Lasers. Microelectronic Reliability,1994, 34(7):1261-1264.
[8] Yisong Dai. A study of optical Noise Measurement as ReliabityEstimation for Laser Diodes. Microelectronic Reliability,1995, 35(4):731-734.
[9] Mitsuo Fukuda, Takuo Hirono, Takeshi Kurosaki etc. 1/f Noise Behavior in Semiconductor Laser Re-gradation. IEEE Photonics Technology, Letters, 1993, 5(10):1165-1167.
[10] B.Orsal, R.Alabedra, P.signoret etc. InGaAsP/InP Distribute Feedback lasers for long wavelength optical communication systems of λ =1.55um:Electrical And optical noise study. Proceeding of SPIE, 1991, 1512:112-123.
[11] B.Orsal, J.M.Peransin, K.Daulasim etc. Noise of 980nm InGaAs/GaAs strained Quantum well lasers and correlation with aging. Proceeding of SPIE,1993,1856:222-237.
[12] B.Orsal, J.M.Peransin, P.Singnoret etc. Low frequency noise of a 980nm InGaAs/GaAs Strained quantum well laser. Phys.III,France, 1993,3:1739-1749.
[13] F.R.Gfeller and D.J.webb. Degradation an lifetime studies of high-power Single-quantum-well AlGaAs ridge Lasers.J.Appl.phy. 1990,68(1):14-20.
[14] P.A.Andrekson, P.Andersson, A.Alping etc. In sity characterization of laser Diodes from wide-Band Electrical Noise Measurements. IEEE Journal of Lightwave technology, 1986, 4(7):804-811.
[15] P.A.Andrekson, P.Andersson, A.Alping. Linewidth determination from Electrical noise measurements on semiconductor Lasers. Electron.lett. 1985, 21:1097-1099.
[16] Orsal B, Sigaoret P, Peransin J.M, etc. Correlation between Electrical andoptical photocurrent Noise in Semiconductor Laser Diode. IEEE Trans. Electron Devices, 1994, 41(11):2151-2161.
[17] Sheng-Lyang Jong, Jim-Yat Wu. Low-frequency Current and Intensity Noise in AlGaAs Laser Diodes.Electronics, 1995, 36(2):189-196.
[18] R.Hakimi and M-C Amann. Reduction on 1/f carrier noise in ZnGaAsP/ZnP Heterostrutures by Sulphur passivation of facets. Semicond.Sci.Technol. 1997, 12:778-780.
[19] Beister G, Maege J, Gutsche D, etc. Simple Method for Examining Sulphur Passivation of Facets in InGaAs-AlGaAs( λ =0.98um)Laser Diodes.Appl.Phys.Lett.1996,68(18):2467-2468.
[20] 胡贵军,石家纬.半导体激光器的电噪声.半导体光电,2002,6:163-166.
[21] 邢丽娟,杨世忠.虚拟仪器的原理及发展.山西电子技术,2006,1:90-91.
[22] 张毅刚.虚拟仪器技术介绍.国外电子测量技术,2006,6:1-6.
[23] 戚兴华,王嘉松.利用小波变换对 1 /f信号进行参数估计.高等学校计算数学学报,2000,9:199-207.
[24] 曹坤勇,于盛林,黄晓晴.基于小波变换的 1 /f类分形信号的参数估计.吉林大学学报(工学版),2003,10:100-104.
[25] 陆伟宏,卢鹏飞.噪声中 1 /f类分形参数估计的新方法.江南大学学报(自然科学版),2004,12:575-578.
[26] 侯国屏,王珅,叶齐鑫.LabVIEW7.1 编程与虚拟仪器设计.清华大学出版社,2005.
[27] 汪敏生等译著.LabVIEW 基础教程.电子工业出版社,2002.
[28] 张志平,刘正平.在 LabVIEW 中调用 MATLAB 的一种方法.计算机与现代化,2004,5:94-95.
[29] 李宁,张元培,朱立军.在 LabVIEW 中使用 MATLAB 脚本节点.仪器仪表标准化与计量,2003,5:17-19.
[30] 曾璐,曾婕.基于 LabVIEW 的虚拟小波消噪仪设计.中国仪器仪表,2005,2:42-45.
[2] Gisela Hartler, Ute Golze, Katrain paschke. Extended noise analysis-a novel tool for reliability screening. Microelectronics Reliablity,1998,38: 1159-1198.
[3] X.Y. Chen, A. Pedersen,O.G. Helleso etc. Electrical noise of laser diodes measured over a wide range of bias currents. Microelectronics Reliability,2000, 40:1925-1928.
[4] Tenchio G.. Low-frequency Intensity Fluctuation of CW DH GaAlAs Diode Lasers. Electronics letters,1976, 12(21):562-563.
[5] P.A.Andrekson, P.Andersson, A.Alping. Electrical Noise Measurement on Laser Diodes for Monitoring of optical Feedback and Mode Hopping. Electron.lett,1986,22:195-196.
[6] Hu Guijun, Shi Jiawei, Zhang Sumei etc. The low-frequency electrical noise as reliability estimation for high-power semiconductor lasers. Optical and Quantum Electronics,2002 ,34(10):987-992.
[7] Shi Jia Wei, Jin EnSun, Ma Jing etc. An Improved Approach an Experimental Results of A low-frequency Noise Measurement Technique used for Reliability Estimation of Diode Lasers. Microelectronic Reliability,1994, 34(7):1261-1264.
[8] Yisong Dai. A study of optical Noise Measurement as ReliabityEstimation for Laser Diodes. Microelectronic Reliability,1995, 35(4):731-734.
[9] Mitsuo Fukuda, Takuo Hirono, Takeshi Kurosaki etc. 1/f Noise Behavior in Semiconductor Laser Re-gradation. IEEE Photonics Technology, Letters, 1993, 5(10):1165-1167.
[10] B.Orsal, R.Alabedra, P.signoret etc. InGaAsP/InP Distribute Feedback lasers for long wavelength optical communication systems of λ =1.55um:Electrical And optical noise study. Proceeding of SPIE, 1991, 1512:112-123.
[11] B.Orsal, J.M.Peransin, K.Daulasim etc. Noise of 980nm InGaAs/GaAs strained Quantum well lasers and correlation with aging. Proceeding of SPIE,1993,1856:222-237.
[12] B.Orsal, J.M.Peransin, P.Singnoret etc. Low frequency noise of a 980nm InGaAs/GaAs Strained quantum well laser. Phys.III,France, 1993,3:1739-1749.
[13] F.R.Gfeller and D.J.webb. Degradation an lifetime studies of high-power Single-quantum-well AlGaAs ridge Lasers.J.Appl.phy. 1990,68(1):14-20.
[14] P.A.Andrekson, P.Andersson, A.Alping etc. In sity characterization of laser Diodes from wide-Band Electrical Noise Measurements. IEEE Journal of Lightwave technology, 1986, 4(7):804-811.
[15] P.A.Andrekson, P.Andersson, A.Alping. Linewidth determination from Electrical noise measurements on semiconductor Lasers. Electron.lett. 1985, 21:1097-1099.
[16] Orsal B, Sigaoret P, Peransin J.M, etc. Correlation between Electrical andoptical photocurrent Noise in Semiconductor Laser Diode. IEEE Trans. Electron Devices, 1994, 41(11):2151-2161.
[17] Sheng-Lyang Jong, Jim-Yat Wu. Low-frequency Current and Intensity Noise in AlGaAs Laser Diodes.Electronics, 1995, 36(2):189-196.
[18] R.Hakimi and M-C Amann. Reduction on 1/f carrier noise in ZnGaAsP/ZnP Heterostrutures by Sulphur passivation of facets. Semicond.Sci.Technol. 1997, 12:778-780.
[19] Beister G, Maege J, Gutsche D, etc. Simple Method for Examining Sulphur Passivation of Facets in InGaAs-AlGaAs( λ =0.98um)Laser Diodes.Appl.Phys.Lett.1996,68(18):2467-2468.
[20] 胡贵军,石家纬.半导体激光器的电噪声.半导体光电,2002,6:163-166.
[21] 邢丽娟,杨世忠.虚拟仪器的原理及发展.山西电子技术,2006,1:90-91.
[22] 张毅刚.虚拟仪器技术介绍.国外电子测量技术,2006,6:1-6.
[23] 戚兴华,王嘉松.利用小波变换对 1 /f信号进行参数估计.高等学校计算数学学报,2000,9:199-207.
[24] 曹坤勇,于盛林,黄晓晴.基于小波变换的 1 /f类分形信号的参数估计.吉林大学学报(工学版),2003,10:100-104.
[25] 陆伟宏,卢鹏飞.噪声中 1 /f类分形参数估计的新方法.江南大学学报(自然科学版),2004,12:575-578.
[26] 侯国屏,王珅,叶齐鑫.LabVIEW7.1 编程与虚拟仪器设计.清华大学出版社,2005.
[27] 汪敏生等译著.LabVIEW 基础教程.电子工业出版社,2002.
[28] 张志平,刘正平.在 LabVIEW 中调用 MATLAB 的一种方法.计算机与现代化,2004,5:94-95.
[29] 李宁,张元培,朱立军.在 LabVIEW 中使用 MATLAB 脚本节点.仪器仪表标准化与计量,2003,5:17-19.
[30] 曾璐,曾婕.基于 LabVIEW 的虚拟小波消噪仪设计.中国仪器仪表,2005,2:42-45.