射频磁控反应溅射法制备HfO_2薄膜的研究
详细信息    本馆镜像全文|  推荐本文 |  |   获取CNKI官网全文
摘要
金刚石具有高红外透过率、低吸收系数、抗热冲击性好、耐磨擦等一系列优异的性能,是用于长波红外波段(8~12μm)理想的窗口和头罩材料。然而金刚石在750℃以上时很容易发生氧化,导致透过率急剧下降。在金刚石表面镀制抗氧化增透涂层可以满足其在高速、高温条件下应用。氧化铪(HfO_2)具有优良的物理、化学性能,抗高温氧化能力强,可用作金刚石抗氧化保护涂层。在国外,HfO_2用作金刚石抗氧化涂层的研究已经展开,并取得进展;在国内,有关HfO_2抗氧化保护涂层的研究还未见报道。本文主要研究射频磁控溅射法制备HfO 2薄膜的工艺对其成分、结构、光学特性及沉积速率的影响规律,为将HfO_2用作金刚石红外增透及抗氧化膜系奠定基础。主要研究工作及结果如下:
     利用OPFCAD软件在金刚石衬底上设计了HfO_2//Diamond和HfO_2/a-Si:H//Diamond增透膜系,并对所设计的膜系进行了结构敏感因子及结构偏差分析。膜系设计结果表明,在金刚石双面镀两种膜系后在长波红外波段的红外透过率均大于85%,可满足高速红外窗口和头罩使用要求。
     研究了主要工艺参数对HfO_2薄膜沉积速率的影响,对工艺参数进行了优化。试验结果表明,HfO_2薄膜的沉积速率随溅射功率增大而增大,随气体压强和O_2流量增大而减小,衬底温度对沉积速率无明显影响。正交试验结果表明O_2流量对沉积速率的影响最大,并确定了获得薄膜最大沉积速率的工艺参数。
     对制备的HfO_2薄膜进行了X射线光电子谱(XPS)、X射线衍射(XRD)和椭圆偏振光谱(SE)分析。结果表明,沉积态薄膜中Hf和O原子结合形成了HfO_2化合物;薄膜中Hf和O元素的原子百分比基本符合HfO_2的化学计量比;沉积态薄膜中HfO_2为单斜相,主要以多晶状态存在;在椭偏光谱分析范围(0.4~1.8μm),HfO_2薄膜的折射率随波长的增大而快速下降,波长大于1.2μm后趋于稳定值1.95,而且薄膜的吸收很小。
Diamond has excellent properties such as good transmittance in the infrared wave band, low absorption coefficient, high resistance to thermal shock and friction. So diamond is an ideal material for airborne LWIR (8-12μm) windows and domes. However, diamond is easily subject to oxidation in air at temperatures greater than 750℃, and the optical transmittance is degraded greatly. It's useful to prepare anti-oxidation and anti-reflective films on the diamond surface to meet the need for applications of high-speed or high temperature environment. Hafnium oxide (HfO_2) is a promising anti-oxidation material with good physical, chemical properties and good anti-oxidation property. Some progress has been made in the researches about HfO_2 anti-oxidation films overseas. But no domestic work has been done on HfO_2 optical and protective films. Researches of the paper mostly concentrate on preparation of HfO_2 films by magnetron sputtering and the functions of experiment parameters on films components, structure, optical properties and deposition rate. The main contents and results are listed as follows:
    HfO_2/Diamond and HfO_2/a-Si:H//Diamond antireflection film systems are designed by OPFCAD, and the sensitive factors and deviation of the films' structure are analyzed. Results show that the average transmittance in LWIR waveband can exceed 85% after both films systems are deposited on the surfaces of diamond, which can meet the requirements high-speed infrared windows and domes.
    The influence of main parameters on deposition rate is discussed, and the main parameters are optimized. The results show that deposition rate of films increases with the sputtering power increasing, and decreases with sputtering pressure and O_2 flux increasing, and deposition rate is insensitive to growth temperature. The orthogonal experiment results show that the effect of O_2 flux on the deposition rates is the most significant, and the parameters to get high deposition rate are decided. XPS and XRD analyses as well as SE transmission spectrum tests are carried out.
引文
1. Daniel C. Harris. Materials for Infrared Windows and Domes. SPIE Optical Engineering Press. 1999. 335
    2.梅遂生,杨家德.光电子技术.北京:国防工业出版社,1999,85
    3.张贵峰.新型红外增透膜与保护膜.红外技术,1995.17(5):23
    4.阎锋:射频磁控反应溅射法制备Y_2O_3薄膜的研究.硕士学位论文,西北工业大学,2006
    5. Tim P Mollart, The development of CVD infrared optics from planar windows to missile domes. Proc. SPIE, Vol. 5078, 2003: 127~136
    6.彭鸿雁,赵立新.类金刚石膜的制备、性能与应用.北京:科学出版社,2004
    7. R . Korenstein, P. Cremin, T. E. Varitimos, et al. Optical Properties of Durable Oxide Coatings for Infrared Applications. SPIE, 2003, 5078: 169~178
    8.陈光华,张阳等.金刚石薄膜的制备与应用.北京:化学工业出版社,2004
    9. T.P. Mollart, K. L. Lewis. Transition metal oxide anti-reflection coatings for airborne diamond optics. Diamond and Related Materials. 2001, (10): 536~541
    10. K. Tankala et al. Oxidation of diamond films synthesized by hot filament assisted chemical vapour deposition. J. Mater. Res, 1990, 5: 2483~2489
    11. M. Alam et al. The kinetics of chemical vapour deposited diamond-oxygen reaction. J. Mater. Res ,1993, 8:2870~2878
    12. C A Klein et al. Critical-point phonon frequencies of diamond. Phys Rev B45,1992, 22:12854~12862
    13. Chang Q Sun et al. Preferential oxidation of diamond {111}. J. Phys. D: Appl. Phys, 2000, 33:2196~2199
    14. Jane Yuan Howe. The Oxidation of Diamond.Thesis for Doctor Degree. New York: Alfred university, 2001
    15. Sun C Q. A model of bonding and band-forming for oxides and nitrides. Appl. Phys. Lett,1998,72:1706~1708
    16. P. John et al. The Oxidation of (100) Textured Diamond. Diamond and Related Materials, 2002, 11:861~866
    17. K. P. Loh et al. Surface oxygenation studies on (100)-oriented diamond using an atom beam source and local anodic oxidation. Surface Science, 2002, 505:93~114
    18. Chen J et al. Graphitization of nano diamond powder annealed in argon ambient. Appl. Phys. Lett, 1999, 74:3651~3653
    19. A.B.Harker and J.F.DeNatale, "Diamond Gradient Index 'Moth-Eye' Antireflection Surfaces for LWIR Windows, "proc. SPIE, 1992: 1760, 261-267
    
    20. Douglas S. Hobbs, Bruce D. MacLeod. Design, Fabrication, and Measured Performance of Anti-Reflecting Surface Textures in Infrared Transmitting Materials. SPIE, 2005, 5786: 349-364
    21. GrANNEN K J, TSU D V, MELIUNAS R J, et al. Oxidation studies of fluorine containing diamond films. Applied Physics Letters, 1991, 59(6): 745-747
    22. Miyata K, Kobashi K. Air oxidation of undoped and B-doped polycrystalline diamond films at high temperature. Journal of Material Research, 1996, 11: 296-305
    23. Kirkpatrick et al. Method of Protective Surfaces on Diamond, Diamondlike Carbon or Carbon .US patent. No. 5855967. Jan.5,1999
    24. S.P.McGeoch E.M.Waddell et al. Aluminum Nitride Coatings for Protection of Diamond at High Temperature in Air. Proc. SPIE 1999, 3705: 163—169
    25. 乔保卫,刘正堂.金刚石抗氧化光学涂层的研究进展.材料工程, 2004,8: 54-56
    
    26. T P Mollart, K L lewis, CJK Wort and CSJ Pickles. Coating Technology for CVD diamond Optics. Window and Dome Technologies and Materials VII.SPIE, 2001: 4375: 199-205
    27. T P Mollart, K L Lewis. Transition metal oxide anti-reflection coatings for airborne diamond optics. Diamond and Related Materials, 2001, 10:536-541
    28. http://www.webelements.com/webelements/elements/text/Hf/key.html
    29. C.T. Kuo, R. Kwor. Study of sputtered HfO_2 thin films on silicon. Thin Solid Films. 1992,213:257-264
    30. Hei Wong, Hiroshi Iwai. On the scaling issues and high-j replacement of ultrathin gate dielectrics for nanoscale MOS transistors. Microelectronic Engineering, 83(2006): 1867-1904
    31. Yongjin Wang, Zhilang Lin, Xinli Cheng et al. Study of HfO_2 thin films prepared by electron beam evaporation. Applied Surface Science 228(2004):93-99
    32. Toshikazu Nishide, Shinji Honda, Masaharu Matsuura et al. Surface, structural and optical properties of sol-gel derived HfO_2 films. Thin Solid Films 371(2000):61-65
    33. M. Gilo, N. Croitoru. Study of HfO_2 films prepared by ion-assisted deposition using a gridless end-hall ion source. Thin Solid Films. 1999, 350:203-208
    34. L. F. Johnson, et al. Anti-reflection and anti-oxidation coatings for diamond. US Patent, No.5472787, Dec 5, 1995
    35. Holmquist, GLENNA. Oxidation resistant diamond composite and method of forming the same. US patent, No.5421976. June 6, 1995
    36. Hei Wong a, B. Sen, V. Filip et al. Material properties of interfacial silicate layer and its influence on the electrical characteristics of MOS devices using hafnia as the gate dielectric. Thin Solid Films, 2006, 504:192~196
    37.邢玉梅,陶凯,俞跃辉等.在SOI材料上制备高质量的氧化铪薄膜.功能材料,2004,35(6):736~738
    38. K. K. S. Curreem, P. F. Lee, K. S. Wong et al. Comparison of interfacial and electrical characteristics of HfO_2 and HfAlO high-k dielectrics on compressively strained Si_(1-x)Ge_x APPLIED PHYSICS LETTERS 88, 182905 (2006)
    39.乔保卫.磁控反应溅射AIN薄膜的制备工艺与性能研究.硕士学位论文.西北工业大学 2003
    40.林永昌,卢维强.光学薄膜原理.北京:国防工业出版社,1990
    41.唐晋发,顾培夫.薄膜光学与技术.北京:机械工业出版社,1989
    42.赵利,薛亦渝,王学华等.膜系自动设计中的几种新型评价函数.武汉理工大学学报.2002,24(5):125~127
    43.孙少妮.减反射薄膜膜系优化设计及工艺研究.东北大学硕士论文,2006,24
    44.宋健全.ZnS头罩增透保护膜系的设计、制备及计算机模拟.博士学位论文.西北工业大学2001
    45.周健,林永昌.一种新的膜系设计方法—Neddle法.光学学报.1997,17(10):1445~1449
    46.李芳,林永昌等.膜系优化设计中的逃逸函数法.光学仪器.2001.23(5-6):11~14
    47.巨志高.金刚石衬底上红外增透及抗氧化膜系的制备与性能研究.硕士学位论文.西北工业大学 2005
    48. Krishna Seshan, HANDBOOK OF THIN-FILM DEPOSITION PROCESSES AND TECHNIQUES. Noyes Publications/William Andrew Publishing. Norwich, New York, U. S. A.2002
    49.陈毅骅.以Y_2O_3为矽闸极介电层金氧半特性之研究.硕士学位论文.中原大学.2003
    50.薛增泉,吴全德,李洁等.薄膜物理.电子工业出版社.1991,20~27
    51.许小红,武海顺等.压电薄膜的制备、结构与应用.科学出版社.2002,50
    52.郑伟涛等.薄膜材料与薄膜技术.化学工业出版社.2004
    53. P.J.Kelly, R.D.Arnell. Magnetron Sputtering: A Review of Developments and Application. Vaccum.2000,(56): 159~172
    54.田民波,刘德令.薄膜科学与技术手册(上册).北京:机械工业出版社,1991
    55.陈国平.薄膜物理与技术.东南大学出版社.1993
    56.高俊杰,余萍,刘志江等,仪器分析,北京:国防工业出版社.2005
    57. R Swanepoel. Determination of the thickness and optical constants of amorphous silicon. J. Phps. E: Sci. Instrum. 16, 1983: 1214~1222.
    58. Dlaz-Parralejo et al, Densification and porosity evaluation of ZrO_2~3 mol.% Y_2O_3 sol—gel thin films, Thin Solid Films 2004, 458:92~97
    59.赖发春,瞿燕,盖荣权.反应磁控溅射制备五氧化二铌光学薄膜.福建师范大学学报.2004,20(4):46~49
    60.杨昌虎,杨力君.分光计的调整对椭圆偏振仪测量薄膜厚度和折射率的影响.实验技术与管理,2005,22(11):40~42
    61.马逊,刘祖明,陈庭金等.椭圆偏振仪测量薄膜厚度和折射率.云南师范大学学报,2005,25(4):24~27
    62.叶宪曾,江子伟,李赛君等.北京大学化学系,仪器分析教学组.北京:仪器分析教程.北京大学出版社,1997:53~64
    63.李学丹,万学英,姜祥祺等.真空沉积技术.浙江:浙江大学出版社.1994
    64.梁敬魁.粉末衍射法测定晶体结构(上册).北京:科学出版社.2003
    65.曲喜新,薄膜物理,上海:上海科学技术出版社 1986.10
    66.赵选民,徐伟,师义民等.数理统计.北京:科学出版社,2002.214
    67. Kaupo Kukli, Jaan Aarik, Teet Uustare et al. Engineering structure and properties of hafnium oxide films by atomic layer deposition temperature. Thin Solid Films 479 (2005) 1~11
    68. C.D.Watner, W.M.Riggs, L.E.Davis et al. Handbook of X-ray photoelectron spectroscopy. Minnesota: Perkin-Elmer Corporation Physical Electronic Division, 1979, 142.
    69. C.K. Maiti, S. Maikap, S. Chatterjee et al. Hafnium oxide gate dielectric for strained-Si_(1_x)Ge_x. Solid-State Electronics, 2003, 47: 1995~2000
    70. G.He M.Liu, L.Q. Zhu et al. Effect of post deposition annealing on the thermal stability and structural characteristics of sputtered HfO_2 films on Si (100). Surface Science, 2005, 576:67~75
    71. Naoyuki Takahashi, Shinichi Nonobe, Takato Nakamura. Growth of HfO2 films using an altemate reaction of HfCl_4 and O_2 under atmospheric pressure. Journal of Solid State Chemistry, 177 (2004) 3944~3948
    72. Su Xing, Ninglin Zhang, Zhitang Song et al. P reparation of hafnium oxide thin film by electron beam evaporation of hafnium incorporating a post thermal process. Microelectronic Engineering,66 (2003) 451~456
    73. Zhan Jie Wang, Toshihide Kumagai, Hiroyuki Kokawa et al. Crystalline phases, microstructures andelectrical properties of hafnium oxide films deposited by sol-gel method. Journal of Crystal Growth, 281 (2005) 452-457
    74. L. Pereira, P.Barquinha, E.Fortuanto et al. Influence of the oxygen/argon ratio on the properties of sputtered hafnium oxide. Mterials Science&Engineering B, 118(2005)210-213

© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号

地址:北京市海淀区学院路29号 邮编:100083

电话:办公室:(+86 10)66554848;文献借阅、咨询服务、科技查新:66554700