V波段低噪声放大器的设计
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摘要
本文采用混合—单片组合技术设计了一种V波段低噪声放大器。国外设计V波段低噪声放大器一般采用MMIC技术,而且增益不高,而国内对V波段低噪声放大器的研究未见报道。
     本文基于国内可以达到的工艺,选取HEMT管芯和MMIC芯片,对HEMT器件的噪声模型和参数的提取进行了研究,采用了先进的微波电路设计软件Ansoft进行电路设计,其中对放大器的低噪声设计进行了重点分析。系统接口采用WR-15型标准矩形波导,本文设计了一个微带探针型微带—波导过渡器。
     本文通过仿真验证了该设计方案的噪声系数小于3.5dB,增益大于32dB,是一种切实可行的方案,为今后的工程化打下了基础。
A project of V-band low noise amplifier has been designed with the combination technology of MIC and MMIC. V-band low noise amplifiers abroad often have been designed and fabricated with MMIC technology, and their value of gain are not high. But there is nothing internal report.
    Based on internal technics, the amplifier was composed of HEMT chips and MMIC chip. This thesis analyzes noise model of HEMTs and extraction of noise parameters. Ansoft software is used to design, optimize and simulate the circuits. The interface of the system is standard waveguide WR-15, so a microstrip-to-waveguide transition is designed.
    The elaborate project is validated by simulation. As the result of simulation, the noise figure of the LNA is less than 3.5dB, and the gain value is more than 32dB. These works in advance will be helpful to engineering practice in future.
引文
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